PHILIPS BU505

DISCRETE SEMICONDUCTORS
DATA SHEET
BU505; BU505D
Silicon diffused power transistors
Product specification
Supersedes data of February 1996
File under Discrete Semiconductors, SC06
1997 Aug 13
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505; BU505D
DESCRIPTION
High-voltage, high-speed switching
NPN power transistor in a TO-220AB
package. The BU505D has an
integrated efficiency diode.
2
2
APPLICATIONS
1
1
• Horizontal deflection circuits of
colour television receivers.
MBB008
3
MBB077
3
MBK106
PINNING
1 2 3
PIN
a. BU505.
b. BU505D.
DESCRIPTION
1
base
2
collector; connected to
mounting base
3
emitter
Fig.1 Simplified outline (TO-220AB) and symbols.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VCESM
collector-emitter peak voltage
VBE = 0
−
1500
V
VCEO
collector-emitter voltage
open base
−
700
V
VCEsat
collector-emitter saturation
voltage
IC = 2 A; IB = 900 mA
−
1
V
VF
diode forward voltage
(BU505D)
IF = 2 A
−
1.8
V
ICsat
collector saturation current
−
2
A
IC
collector current (DC)
−
2.5
A
ICM
collector current (peak value)
see Fig.3
−
4
A
Ptot
total power dissipation
Tmb ≤ 25 °C; see Fig.4
−
75
W
tf
fall time
inductive load; see Fig.7
0.9
−
µs
see Fig.3
THERMAL CHARACTERISTICS
SYMBOL
Rth j-mb
1997 Aug 13
PARAMETER
thermal resistance from junction to mounting base
2
VALUE
UNIT
1.67
K/W
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505; BU505D
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCESM
collector-emitter peak voltage
VBE = 0
−
1500
V
VCEO
collector-emitter voltage
open base
−
700
V
ICsat
collector saturation current
−
2
A
IC
collector current (DC)
see Fig.3
−
2.5
A
ICM
collector current (peak value)
see Fig.3
−
4
A
IB
base current (DC)
−
2
A
IBM
base current (peak value)
−
4
A
Ptot
total power dissipation
−
75
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tmb ≤ 25 °C; see Fig.4
MGB859
10
handbook, full pagewidth
Zth j−mb
(K/W)
δ=1
1
0.75
0.50
0.33
0.20
0.10
0.05
10−1
10−2
10−2
0.02
0.01
0
10−1
1
Fig.2 Transient thermal impedance.
1997 Aug 13
3
10
tp (ms)
102
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505; BU505D
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCEOsust
collector-emitter sustaining voltage see Figs 5 and 6
700
−
−
V
VCEsat
collector-emitter saturation voltage IC = 2 A; IB = 900 mA
−
−
1
V
VBEsat
base-emitter saturation voltage
IC = 2 A; IB = 900 mA
−
−
1.3
V
VEBO
emitter-base voltage
IE = 10 mA; IC = 0
−
6
−
V
VF
diode forward voltage (BU505D)
IF = 2 A
−
−
1.8
V
ICES
collector-emitter cut-off current
VCE = VCESmax; VBE = 0;
note 1
−
−
0.15
mA
VCE = VCESmax; VBE = 0;
Tj = 125 °C; note 1
−
−
1
mA
mA
IEBO
emitter-base cut-off current
VEB = 5 V; IC = 0
−
−
1
hFE
DC current gain
VCE = 5 V; IC = 100 mA
6
13
30
fT
transition frequency
VCE = 5 V; IC = 100 mA;
f = 5 MHz
−
7
−
MHz
Cc
collector capacitance
VCB = 10 V; IE = ie = 0;
f = 1 MHz
−
65
−
pF
Switching times in horizontal deflection circuit (see Fig.7)
ts
tf
storage time
fall time
ICM = 2 A; IB(end) = 900 mA;
Vdr = −4 V
LB = 10 µH
−
6.5
−
µs
LB = 15 µH
−
7.5
−
µs
LB = 25 µH
−
9.5
−
µs
LB = 10 µH
−
0.9
−
µs
LB = 15 µH
−
0.9
−
µs
LB = 25 µH
−
0.85
−
µs
ICM = 2 A; IB(end) = 900 mA;
Vdr = −4 V
Note
1. Measured with a half-sinewave voltage (curve tracer).
1997 Aug 13
4
Philips Semiconductors
Product specification
Silicon diffused power transistors
handbook, full pagewidth
BU505; BU505D
MGB942
102
IC
(A)
10
δ = 0.01
ICM max
IC max
tp =
10 µs
II
(1)
20 µs
1
50 µs
100 µs
200 µs
I
500 µs
(2)
10−1
2 ms
10 ms
DC
10−2
10
102
103
Tmb = 25 °C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
(1) Ptot max and Ptot peak max lines.
(2) Second breakdown limits.
Fig.3 Forward bias SOAR.
1997 Aug 13
5
VCE (V)
104
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505; BU505D
MGD283
120
handbook,
halfpage
Ptot max
handbook, halfpage
+ 50 V
(%)
100 to 200 Ω
L
80
horizontal
oscilloscope
vertical
40
6V
300 Ω
1Ω
30 to 60 Hz
MGE252
0
0
50
100
Tmb (oC)
150
Fig.5
Fig.4 Power derating curve.
handbook, halfpage
Test circuit for collector-emitter
sustaining voltage.
MBH382
ICsat
iC
handbook,IC
halfpage
90%
MGE239
(mA)
250
10%
200
time
tf
100
iB
ts
IB (end)
0
VCE (V)
min
VCEOsust
time
Fig.6
Oscilloscope display for collector-emitter
sustaining voltage.
1997 Aug 13
Fig.7 Switching time waveforms.
6
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505; BU505D
PACKAGE OUTLINE
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
E
SOT78
A
A1
P
q
D1
D
L1
L2(1)
Q
b1
L
1
2
3
c
b
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
UNIT
A
A1
b
b1
c
D
D1
E
e
L
L1
L2
max.
P
q
Q
mm
4.5
4.1
1.39
1.27
0.9
0.7
1.3
1.0
0.7
0.4
15.8
15.2
6.4
5.9
10.3
9.7
2.54
15.0
13.5
3.30
2.79
3.0
3.8
3.6
3.0
2.7
2.6
2.2
Note
1. Terminals in this zone are not tinned.
OUTLINE
VERSION
SOT78
1997 Aug 13
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-06-11
TO-220AB
7
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505; BU505D
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Aug 13
8
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505; BU505D
NOTES
1997 Aug 13
9
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505; BU505D
NOTES
1997 Aug 13
10
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505; BU505D
NOTES
1997 Aug 13
11
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© Philips Electronics N.V. 1997
SCA55
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Printed in The Netherlands
137067/00/01/pp12
Date of release: 1997 Aug 13
Document order number:
9397 750 02708