PHILIPS BSP62

DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D087
BSP60; BSP61; BSP62
PNP Darlington transistors
Product specification
Supersedes data of 1997 Apr 22
1999 Apr 29
Philips Semiconductors
Product specification
PNP Darlington transistors
BSP60; BSP61; BSP62
PINNING
FEATURES
• High current (max. 0.5 A)
PIN
• Low voltage (max. 80 V)
1
• Integrated diode and resistor.
DESCRIPTION
base
2,4
3
collector
emitter
APPLICATIONS
• Industrial switching applications such as:
4
– Print hammer
2, 4
– Solenoid
1
– Relay and lamp drivers.
DESCRIPTION
1
PNP Darlington transistor in a SOT223 plastic package.
NPN complements: BSP50, BSP51 and BSP52.
2
Top view
3
3
MAM266
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCES
PARAMETER
collector-base voltage
CONDITIONS
MIN.
MAX.
UNIT
open emitter
BSP60
−
−60
V
BSP61
−
−80
V
BSP62
−
−90
V
BSP60
−
−45
V
BSP61
−
−60
V
BSP62
−
−80
V
collector-emitter voltage
VBE = 0
VEBO
emitter-base voltage
−
−5
V
IC
collector current (DC)
−
−0.5
A
ICM
peak collector current
−
−1.5
A
IB
base current (DC)
Ptot
total power dissipation
Tstg
open collector
−
−100
mA
−
1.25
W
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tamb ≤ 25 °C; note 1
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated
Handbook”.
1999 Apr 29
2
Philips Semiconductors
Product specification
PNP Darlington transistors
BSP60; BSP61; BSP62
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient
Rth j-s
thermal resistance from junction to solder point
VALUE
UNIT
98
K/W
17
K/W
note 1
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
ICES
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
collector cut-off current
BSP60
VBE = 0; VCE = −45 V
−
−
−50
nA
BSP61
VBE = 0; VCE = −60 V
−
−
−50
nA
BSP62
VBE = 0; VCE = −80 V
−
−
−50
nA
IEBO
emitter cut-off current
IC = 0; VEB = −4 V
−
−
−50
nA
hFE
DC current gain
VCE = −10 V; note 1; see Fig.2
IC = −150 mA
1000
−
−
IC = −500 mA
2000
−
−
collector-emitter saturation
voltage
IC = −500 mA; IB = −0.5 mA
−
−
−1.3
V
IC = −500 mA; IB = −0.5 mA;
Tj = 150 °C
−
−
−1.3
V
VBEsat
base-emitter saturation voltage
IC = −500 mA; IB = −0.5 mA
−
−
−1.9
V
fT
transition frequency
IC = −500 mA; VCE = −5 V;
f = 100 MHz
−
200
−
MHz
−
400
−
ns
−
1500
−
ns
VCEsat
Switching times (between 10% and 90% levels); see Fig.3
ton
turn-on time
toff
turn-off time
ICon = −500 mA; IBon = −0.5 mA;
IBoff = 0.5 mA
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1999 Apr 29
3
Philips Semiconductors
Product specification
PNP Darlington transistors
BSP60; BSP61; BSP62
MGD839
6000
handbook, full pagewidth
hFE
5000
4000
3000
2000
1000
0
−10−1
−1
−10
−102
VCE = −10 V.
Fig.2 DC current gain; typical values.
VBB
handbook, full pagewidth
RB
VCC
RC
Vo
(probe)
oscilloscope
450 Ω
(probe)
450 Ω
R2
Vi
DUT
R1
MGD624
Vi = −10 V; T = 200 µs; tp = 6 µs; tr = tf ≤ 3 ns.
R1 = 56 Ω; R2 = 10 kΩ; RB = 10 kΩ; RC = 18 Ω.
VBB = 1.8 V; VCC = −10.7 V.
Oscilloscope: input impedance Zi = 50 Ω.
Fig.3 Test circuit for switching times.
1999 Apr 29
4
oscilloscope
IC (mA)
−103
Philips Semiconductors
Product specification
PNP Darlington transistors
BSP60; BSP61; BSP62
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
D
SOT223
E
B
A
X
c
y
HE
v M A
b1
4
Q
A
A1
1
2
3
Lp
bp
e1
w M B
detail X
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.8
1.5
0.10
0.01
0.80
0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
4.6
2.3
7.3
6.7
1.1
0.7
0.95
0.85
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
96-11-11
97-02-28
SOT223
1999 Apr 29
EUROPEAN
PROJECTION
5
Philips Semiconductors
Product specification
PNP Darlington transistors
BSP60; BSP61; BSP62
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Apr 29
6
Philips Semiconductors
Product specification
PNP Darlington transistors
BSP60; BSP61; BSP62
NOTES
1999 Apr 29
7
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© Philips Electronics N.V. 1999
SCA63
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Printed in The Netherlands
115002/00/04/pp8
Date of release: 1999 Apr 29
Document order number:
9397 750 05811