DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAV20; BAV21 General purpose diodes Product specification Supersedes data of 1996 Sep 17 1999 May 25 Philips Semiconductors Product specification General purpose diodes BAV20; BAV21 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD27 (DO-35) package The BAV20 and BAV21 are switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages. • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 150 V, 200 V • Repetitive peak reverse voltage: max. 200 V, 250 V • Repetitive peak forward current: max. 625 mA. handbook, halfpage k a MAM246 APPLICATIONS • General purposes in industrial equipment e.g. oscilloscopes, digital voltmeters and video output stages in colour television. 1999 May 25 The diodes are type branded. Fig.1 Simplified outline (SOD27; DO-35) and symbol. 2 Philips Semiconductors Product specification General purpose diodes BAV20; BAV21 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR PARAMETER CONDITIONS MIN. MAX. UNIT repetitive peak reverse voltage BAV20 − 200 V BAV21 − 250 V BAV20 − 150 V BAV21 − 200 V − 250 mA − 625 mA t = 1 µs − 9 A t = 100 µs − 3 A t=1s − 1 A − 400 mW continuous peak reverse voltage IF continuous forward current IFRM repetitive peak forward current IFSM non-repetitive peak forward current see Fig.2; note 1 square wave; Tj = 25 °C prior to surge; see Fig.4 Tamb = 25 °C; note 1 Ptot total power dissipation Tstg storage temperature −65 +175 °C Tj junction temperature − 175 °C Note 1. Device mounted on an FR4 printed circuit-board; lead length 10 mm. 1999 May 25 3 Philips Semiconductors Product specification General purpose diodes BAV20; BAV21 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current CONDITIONS MIN. MAX. UNIT see Fig.3 IF = 100 mA − 1.0 V IF = 200 mA − 1.25 V VR = VRmax − 100 nA VR = VRmax; Tj = 150 °C − 100 µA see Fig.5 Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 − 5 pF trr reverse recovery time when switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA; see Fig.8 − 50 ns THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length 10 mm 240 K/W Rth j-a thermal resistance from junction to ambient lead length 10 mm; note 1 375 K/W Note 1. Device mounted on a printed circuit-board without metallization pad. 1999 May 25 4 Philips Semiconductors Product specification General purpose diodes BAV20; BAV21 GRAPHICAL DATA MBG449 300 MBG459 600 handbook, halfpage handbook, halfpage IF (mA) IF (mA) 200 400 (1) 100 (3) 200 0 0 0 100 Tamb (oC) 200 0 1 2 VF (V) (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Device mounted on an FR4 printed-circuit board; lead length 10 mm. Fig.2 (2) Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. MBG703 102 handbook, full pagewidth IFSM (A) 10 1 10−1 1 10 102 103 tp (µs) Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1999 May 25 5 104 Philips Semiconductors Product specification General purpose diodes BAV20; BAV21 MGD009 103 handbook, halfpage MGD005 1.6 handbook, halfpage IR (µA) Cd (pF) 102 1.4 10 1.2 1 1.0 10−1 10−2 0 100 Tj (oC) 0.8 200 0 10 VR = VRmax. Solid line; maximum values. Dotted line; typical values. f = 1 MHz; Tj = 25 °C. Fig.5 Fig.6 Reverse current as a function of junction temperature. MGL588 300 handbook, halfpage VR (V) (1) 200 (2) 100 0 0 100 Tamb (oC) 200 (1) BAV21. (2) BAV20. Fig.7 Maximum permissible continuous reverse voltage as a function of ambient temperature. 1999 May 25 6 VR (V) 20 Diode capacitance as a function of reverse voltage; typical values. Philips Semiconductors Product specification General purpose diodes BAV20; BAV21 handbook, full pagewidth tr tp t D.U.T. RS = 50 Ω V = VR I F x R S IF 10% IF SAMPLING OSCILLOSCOPE t R i = 50 Ω MGA881 (1) 90% VR input signal (1) IR = 3 mA. Fig.8 Reverse recovery voltage test circuit and waveforms. 1999 May 25 t rr 7 output signal Philips Semiconductors Product specification General purpose diodes BAV20; BAV21 PACKAGE OUTLINE Hermetically sealed glass package; axial leaded; 2 leads SOD27 (1) b D G1 L L DIMENSIONS (mm are the original dimensions) UNIT b max. D max. G1 max. L min. mm 0.56 1.85 4.25 25.4 0 1 2 mm scale Note 1. The marking band indicates the cathode. REFERENCES OUTLINE VERSION IEC JEDEC EIAJ SOD27 A24 DO-35 SC-40 EUROPEAN PROJECTION ISSUE DATE 97-06-09 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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