DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PBSS5540Z PNP medium power transistor Preliminary specification 1999 Aug 04 Philips Semiconductors Preliminary specification PNP medium power transistor PBSS5540Z PINNING FEATURES • High current (max. 10 A) PIN • Low voltage (max. 40 V) 1 base • Low VCEsat. 2 collector 3 emitter 4 collector APPLICATIONS DESCRIPTION • Heavy duty battery powered equipment (Automotive, Telecom and Audio/Video) such as motor and lamp drivers • VCEsat critical applications such as the latest low supply voltage IC applications 4 handbook, halfpage 2, 4 • All battery driven equipment to save battery power. 1 DESCRIPTION 3 PNP low VCEsat transistor in a SOT223 plastic package. NPN complement: PBSS4540Z. 1 2 3 Top view MAM288 MARKING CODE TYPE NUMBER MARKING CODE PBSS5540Z Fig.1 Simplified outline (SOT223) and symbol. PB5540 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −40 V VCEO collector-emitter voltage open base − −40 V VEBO emitter-base voltage open collector − −6 V IC collector current (DC) − −5 A ICM peak collector current − −10 A IBM peak base current − −2 A Ptot total power dissipation − 1.35 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. 1999 Aug 04 2 Philips Semiconductors Preliminary specification PNP medium power transistor PBSS5540Z THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 92 K/W note 1 Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector cut-off current CONDITIONS MAX. UNIT − − −100 nA IE = 0; VCB = −30 V; Tj = 150 °C − − −50 µA − − −100 nA IC = −500 mA 250 350 − IC = −1 A; note 1 200 300 − IC = −2 A; note 1 − 225 − IC = −5 A; note 1 50 100 − IC = −500 mA; IB = −5 mA − −85 −130 mV emitter cut-off current IC = 0; VEB = −5 V hFE DC current gain VCE = −2 V; collector-emitter saturation voltage TYP. IE = 0; VCB = −30 V IEBO VCEsat MIN. IC = −1 A; IB = −10 mA − −130 −180 mV IC = −2 A; IB = −200 mA − −150 −210 mV IC = −5 A; IB = −500 mA − 340 460 mV VBEsat base-emitter saturation voltage IC = −5 A; IB = −500 mA − − −1.3 V VBEon base-emitter turn-on voltage VCE = −2 V; IC = −2 A −1.25 −0.81 − V Cc collector capacitance IE = ie = 0; VCB = −10 V; f = 1 MHz − 92 105 pF fT transition frequency IC = −500 mA; VCE = −5 V; f = 100 MHz 50 100 − MHz Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 1999 Aug 04 3 Philips Semiconductors Preliminary specification PNP medium power transistor PBSS5540Z PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 96-11-11 97-02-28 SOT223 1999 Aug 04 EUROPEAN PROJECTION 4 Philips Semiconductors Preliminary specification PNP medium power transistor PBSS5540Z DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Aug 04 5 Philips Semiconductors Preliminary specification PNP medium power transistor PBSS5540Z NOTES 1999 Aug 04 6 Philips Semiconductors Preliminary specification PNP medium power transistor PBSS5540Z NOTES 1999 Aug 04 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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