CY62167E MoBL® 16-Mbit (1 M × 16 / 2 M × 8) Static RAM 16-Mbit (1 M × 16 / 2 M × 8) Static RAM Features ■ Configurable as 1 M × 16 or as 2 M × 8 SRAM ■ Very high speed: 45 ns ■ Wide voltage range: 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 1.5 µA ❐ Maximum standby current: 12 µA and BLE are HIGH). The input and output pins (I/O0 through I/O15) are placed in a high impedance state when: ■ Ultra low active power ❐ Typical active current: 2.2 mA at f = 1 MHz ■ Easy memory expansion with CE1, CE2, and OE features ■ Automatic power-down when deselected ■ CMOS for optimum speed and power ■ Offered in 48-pin TSOP I package Functional Description The CY62167E is a high performance CMOS static RAM organized as 1 M words by 16-bits/2 M words by 8-bits. This device features advanced circuit design to provide an ultra low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications. The device also has an automatic power down feature that reduces power consumption when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH, or CE2 LOW, or both BHE Logic Block Diagram ■ The device is deselected (CE1 HIGH or CE2 LOW) ■ Outputs are disabled (OE HIGH) ■ Both byte high enable and byte low enable are disabled (BHE, BLE HIGH) or ■ A write operation is in progress (CE1 LOW, CE2 HIGH, and WE LOW) To write to the device, take chip enables (CE1 LOW and CE2 HIGH) and write enable (WE) input LOW. If byte low enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A19). If byte high enable (BHE) is LOW, then data from the I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A19). To read from the device, take chip enables (CE1 LOW and CE2 HIGH) and output enable (OE) LOW while forcing the write enable (WE) HIGH. If byte low enable (BLE) is LOW, then data from the memory location specified by the address pins appears on I/O0 to I/O7. If byte high enable (BHE) is LOW, then data from memory appears on I/O8 to I/O15. See Truth Table on page 12 for a complete description of read and write modes. The CY62167E device is suitable for interfacing with processors that have TTL I/P levels. It is not suitable for processors that require CMOS I/P levels. Please see Electrical Characteristics on page 4 for more details and suggested alternatives. For a complete list of related documentation, click here. SENSE AMPS A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 ROW DECODER DATA IN DRIVERS 1 M × 16 / 2 M × 8 RAM ARRAY I/O0–I/O7 I/O8–I/O15 COLUMN DECODER BYTE BHE WE CE2 BHE OE CE1 BLE BLE POWER DOWN CIRCUIT Cypress Semiconductor Corporation Document Number: 001-15607 Rev. *G CE1 • A11 A12 A13 A14 A15 A16 A17 A18 A19 CE2 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised July 20, 2015 CY62167E MoBL® Contents Pin Configuration ............................................................. 3 Product Portfolio .............................................................. 3 Maximum Ratings ............................................................. 4 Operating Range ............................................................... 4 Electrical Characteristics ................................................. 4 Capacitance ...................................................................... 5 Thermal Resistance .......................................................... 5 AC Test Loads and Waveforms ....................................... 5 Data Retention Characteristics ....................................... 6 Data Retention Waveform ................................................ 6 Switching Characteristics ................................................ 7 Switching Waveforms ...................................................... 8 Truth Table ...................................................................... 12 Document Number: 001-15607 Rev. *G Ordering Information ...................................................... 13 Ordering Code Definitions ......................................... 13 Package Diagram ............................................................ 14 Acronyms ........................................................................ 15 Document Conventions ................................................. 15 Units of Measure ....................................................... 15 Document History Page ................................................. 16 Sales, Solutions, and Legal Information ...................... 18 Worldwide Sales and Design Support ....................... 18 Products .................................................................... 18 PSoC® Solutions ...................................................... 18 Cypress Developer Community ................................. 18 Technical Support ..................................................... 18 Page 2 of 18 CY62167E MoBL® Pin Configuration 48-pin TSOP I pinout (Top View) [1, 2] A15 A14 A13 A12 A11 A10 A9 A8 A19 NC WE CE2 NC BHE BLE A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 BYTE Vss I/O15/A20 I/O7 I/O14 I/O6 I/O13 I/O5 I/O12 I/O4 Vcc I/O11 I/O3 I/O10 I/O2 I/O9 I/O1 I/O8 I/O0 OE Vss CE1 A0 Product Portfolio Power Dissipation VCC Range (V) Product CY62167ELL Speed (ns) Min Typ[3] Max 4.5 5.0 5.5 45 Operating ICC (mA) f = 1 MHz Standby ISB2 (µA) f = fmax Typ[3] Max Typ[3] Max Typ[3] Max 2.2 4.0 25 30 1.5 12 Notes 1. NC pins are not connected on the die. 2. The BYTE pin in the 48-pin TSOPI package must be tied to VCC to use the device as a 1 M × 16 SRAM. The 48-TSOPI package can also be used as a 2 M × 8 SRAM by tying the BYTE signal to VSS. In the 2 M × 8 configuration, pin 45 is A20, while BHE, BLE and I/O8 to I/O14 pins are not used. 3. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25 °C. Document Number: 001-15607 Rev. *G Page 3 of 18 CY62167E MoBL® DC input voltage [4, 5] .....................................–0.5 V to 6.0 V Maximum Ratings Exceeding maximum ratings may shorten the useful life of the device. User guidelines are not tested. Storage temperature ................................ –65 °C to +150 °C Ambient temperature with power applied ................................... –55 °C to +125 °C Supply voltage to ground potential [4, 5] .........–0.5 V to 6.0 V Output current into outputs (LOW) ............................. 20 mA Static discharge voltage (MIL-STD-883, method 3015) ................................. >2001 V Latch-up current ..................................................... >200 mA Operating Range DC voltage applied to outputs in high Z state [4, 5] .........................................–0.5 V to 6.0 V Device Range CY62167ELL Industrial Ambient Temperature VCC[6] –40 °C to +85 °C 4.5 V to 5.5 V Electrical Characteristics Over the Operating Range Parameter VOH Description Output HIGH voltage Test Conditions VCC = 4.5 V VCC = 5.5 V IOH = –1.0 mA IOH = –0.1 mA 45 ns Min Typ [7] Max 2.4 – – 3.4 Unit V [8] – – – – 0.4 V VOL Output LOW voltage IOL = 2.1 mA VIH Input HIGH voltage VCC = 4.5 V to 5.5 V 2.2 – VCC + 0.5 V V VIL Input LOW voltage VCC = 4.5 V to 5.5 V –0.5 – 0.7 [9] V IIX Input leakage current GND < VI < VCC –1 – +1 µA IOZ Output leakage current GND < VO < VCC, output disabled –1 – +1 µA ICC VCC operating supply current f = fMAX = 1/tRC f = 1 MHz ISB2[10] Automatic power down current—CMOS inputs VCC = VCC(max) IOUT = 0 mA CMOS levels CE1 > VCC – 0.2 V or CE2 < 0.2 V, or BHE and BLE > VCC – 0.2 V, VIN > VCC – 0.2 V or VIN < 0.2 V, f = 0, VCC = VCC(max) – 25 30 mA – 2.2 4.0 mA – 1.5 12 µA Notes 4. VIL(min) = –2.0 V for pulse durations less than 20 ns. 5. VIH(max) = VCC + 0.75 V for pulse durations less than 20 ns. 6. Full Device AC operation is based on a 100 µs ramp time from 0 to VCC(min) and 200 µs wait time after VCC stabilization. 7. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25 °C. 8. Please note that the maximum VOH limit does not exceed minimum CMOS VIH of 3.5 V. If you are interfacing this SRAM with 5 V legacy processors that require a minimum VIH of 3.5V, please refer to Application Note AN6081 for technical details and options you may consider. 9. Under DC conditions the device meets a VIL of 0.8 V. However, in dynamic conditions input LOW voltage applied to the device must not be higher than 0.7 V. 10. Chip enables (CE1 and CE2), byte enables (BHE and BLE) and BYTE need to be tied to CMOS levels to meet the ISB2 / ICCDR spec. Other inputs can be left floating. Document Number: 001-15607 Rev. *G Page 4 of 18 CY62167E MoBL® Capacitance Parameter [11] Description CIN Input capacitance COUT Output capacitance Test Conditions Max Unit 10 pF 10 pF TA = 25 °C, f = 1 MHz, VCC = VCC(typ) Thermal Resistance Parameter [11] Description ΘJA Thermal resistance (junction to ambient) ΘJC Thermal resistance (junction to case) Test Conditions 48-pin TSOP I Unit Still air, soldered on a 3 × 4.5 inch, four-layer printed circuit board 54.25 °C/W 12.63 °C/W AC Test Loads and Waveforms Figure 1. AC Test Loads and Waveforms VCC OUTPUT R1 VCC GND 30 pF INCLUDING JIG AND SCOPE R2 10% ALL INPUT PULSES 90% 90% 10% FALL TIME= 1 V/ns RISE TIME= 1 V/ns EQUIVALENT TO: THÉVENIN EQUIVALENT RTH OUTPUT VTH Parameters Values Unit R1 1800 Ω R2 990 Ω RTH 639 Ω VTH 1.77 V Note 11. Tested initially and after any design or process changes that may affect these parameters. Document Number: 001-15607 Rev. *G Page 5 of 18 CY62167E MoBL® Data Retention Characteristics Over the operating range Parameter Description Conditions Min Typ [12] Max Unit 2.0 – – V VDR VCC for data retention – ICCDR[13] Data retention current VCC = VDR, CE1 > VCC – 0.2 V or CE2 < 0.2 V, or BHE and BLE > VCC – 0.2 V, VIN > VCC – 0.2 V or VIN < 0.2 V – – 12 µA tCDR[14] Chip deselect to data retention time – 0 – – ns tR[15] Operation recovery time – 45 – – ns Data Retention Waveform Figure 2. Data Retention Waveform[16] VCC VCC(min) tCDR DATA RETENTION MODE VDR > 2.0 V VCC(min) tR CE1 or BHE. BLE or CE2 Notes 12. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25 °C. 13. Chip enables (CE1 and CE2), byte enables (BHE and BLE) and BYTE need to be tied to CMOS levels to meet the ISB2 / ICCDR spec. Other inputs can be left floating. 14. Tested initially and after any design or process changes that may affect these parameters. 15. Full device operation requires linear VCC ramp from VDR to VCC(min) > 100 µs or stable at VCC(min) > 100 µs. 16. BHE. BLE is the AND of BHE and BLE. Deselect the chip by either disabling the chip enable signals or by disabling BHE and BLE. Document Number: 001-15607 Rev. *G Page 6 of 18 CY62167E MoBL® Switching Characteristics Over the Operating Range Parameter [17, 18] Description 45 ns Min Max Unit Read Cycle tRC Read cycle time 45 – ns tAA Address to data valid – 45 ns tOHA Data hold from address change 10 – ns tACE CE1 LOW and CE2 HIGH to data valid – 45 ns tDOE OE LOW to data valid – 22 ns 5 – ns – 18 ns [19] tLZOE OE LOW to low Z tHZOE OE HIGH to high Z[19, 20] Z[19] tLZCE CE1 LOW and CE2 HIGH to low 10 – ns tHZCE CE1 HIGH and CE2 LOW to high Z[19, 20] – 18 ns tPU CE1 LOW and CE2 HIGH to power-up 0 – ns tPD CE1 HIGH and CE2 LOW to power-down – 45 ns tDBE BLE/BHE LOW to data valid – 45 ns tLZBE BLE/BHE LOW to low Z[19, 21] 5 – ns – 18 ns tHZBE Write BLE/BHE HIGH to high Z[19, 20] Cycle[22, 23] tWC Write cycle time 45 – ns tSCE CE1 LOW and CE2 HIGH to write end 35 – ns tAW Address setup to write end 35 – ns tHA Address hold from write end 0 – ns tSA Address setup to write start 0 – ns tPWE WE pulse width 35 – ns tBW BLE/BHE LOW to write end 35 – ns tSD Data setup to write end 25 – ns tHD Data hold from write end 0 – ns tHZWE WE LOW to high Z[19, 20] – 18 ns 10 – ns tLZWE [19] WE HIGH to low Z Notes 17. Test conditions for all parameters other than tristate parameters assume signal transition time of 1 V/ns, timing reference levels of VCC(typ)/2, input pulse levels of 0 to VCC(typ), and output loading of the specified IOL/IOH as shown in Figure 1 on page 5. 18. In an earlier revision of this device, under a specific application condition, READ and WRITE operations were limited to switching of the byte enable and/or chip enable signals as described in the Application Notes AN13842 and AN66311. However, the issue has been fixed and in production now, and hence, these Application Notes are no longer applicable. They are available for download on our website as they contain information on the date code of the parts, beyond which the fix has been in production. 19. At any temperature and voltage condition, tHZCE is less than tLZCE, tHZBE is less than tLZBE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any device. 20. tHZOE, tHZCE, tHZBE, and tHZWE transitions are measured when the outputs enter a high impedance state. 21. If both byte enables are toggled together, this value is 10 ns. 22. The internal write time of the memory is defined by the overlap of WE, CE1 = VIL, BHE or BLE or both = VIL, and CE2 = VIH. All signals must be active to initiate a write and any of these signals can terminate a write by going inactive. The data input setup and hold timing should be referenced to the edge of the signal that terminates the write. 23. The minimum write cycle time for Write Cycle No. 3 (WE controlled, OE LOW) should be equal to the sum of tSD and tHZWE. Document Number: 001-15607 Rev. *G Page 7 of 18 CY62167E MoBL® Switching Waveforms Figure 3. Read Cycle No. 1 (Address Transition Controlled) [24, 25] tRC RC ADDRESS tOHA DATA OUT tAA PREVIOUS DATA VALID DATA VALID Figure 4. Read Cycle No. 2 (OE Controlled) [25, 26] ADDRESS tRC CE1 tPD tHZCE CE2 tACE BHE/BLE tDBE tHZBE tLZBE OE tHZOE tDOE DATA OUT tLZOE HIGH IMPEDANCE HIGH IMPEDANCE DATA VALID tLZCE VCC SUPPLY CURRENT tPU 50% 50% ICC ISB Notes 24. The device is continuously selected. OE, CE1 = VIL, BHE, BLE or both = VIL, and CE2 = VIH. 25. WE is HIGH for read cycle. 26. Address valid before or similar to CE1, BHE, BLE transition LOW and CE2 transition HIGH. Document Number: 001-15607 Rev. *G Page 8 of 18 CY62167E MoBL® Switching Waveforms (continued) Figure 5. Write Cycle No. 1 (WE Controlled) [27, 28, 29] tWC ADDRESS tSCE CE1 CE2 tAW tHA tSA WE tPWE tBW BHE/BLE OE tHD tSD DATA I/O NOTE 30 VALID DATA tHZOE Notes 27. The internal write time of the memory is defined by the overlap of WE, CE1 = VIL, BHE or BLE or both = VIL, and CE2 = VIH. All signals must be active to initiate a write and any of these signals can terminate a write by going inactive. The data input setup and hold timing should be referenced to the edge of the signal that terminates the write. 28. Data I/O is high impedance if OE = VIH. 29. If CE1 goes HIGH and CE2 goes LOW simultaneously with WE = VIH, the output remains in a high impedance state. 30. During this period the I/Os are in output state and input signals must not be applied. Document Number: 001-15607 Rev. *G Page 9 of 18 CY62167E MoBL® Switching Waveforms (continued) Figure 6. Write Cycle No. 2 (CE1 or CE2 Controlled).[31, 32, 33] tWC ADDRESS tSCE CE1 CE2 tSA tAW tHA tPWE WE tBW BHE/BLE OE DATA I/O tHD tSD NOTE 34 VALID DATA tHZOE Figure 7. Write Cycle No. 3 (WE Controlled, OE LOW) [33, 35] tWC ADDRESS tSCE CE1 CE2 tBW BHE/BLE tAW tSA tHA tPWE WE tSD DATA I/O NOTE 34 tHD VALID DATA tHZWE tLZWE 31. The internal write time of the memory is defined by the overlap of WE, CE1 = VIL, BHE or BLE or both = VIL, and CE2 = VIH. All signals must be active to initiate a write and any of these signals can terminate a write by going inactive. The data input setup and hold timing should be referenced to the edge of the signal that terminates the write. 32. Data I/O is high impedance if OE = VIH. 33. If CE1 goes HIGH and CE2 goes LOW simultaneously with WE = VIH, the output remains in a high impedance state. 34. During this period the I/Os are in output state and input signals must not be applied. 35. The minimum write cycle pulse width should be equal to the sum of tSD and tHZWE. Document Number: 001-15607 Rev. *G Page 10 of 18 CY62167E MoBL® Switching Waveforms (continued) Figure 8. Write Cycle No. 4 (BHE/BLE controlled, OE LOW) [36] tWC ADDRESS CE1 CE2 tSCE tAW tHA tBW BHE/BLE tSA tPWE WE tSD DATA I/O NOTE 37 tHD VALID DATA Notes 36. If CE1 goes HIGH and CE2 goes LOW simultaneously with WE = VIH, the output remains in a high impedance state. 37. During this period the I/Os are in output state and input signals must not be applied. Document Number: 001-15607 Rev. *G Page 11 of 18 CY62167E MoBL® Truth Table CE1 H CE2 WE OE BHE BLE [38] X X X X X X[38] Inputs Outputs Mode Power High Z Deselect/power-down Standby (ISB) L X X X X High Z Deselect/power-down Standby (ISB) [38] X X H H High Z Deselect/power-down Standby (ISB) L H H L L L Data out (I/O0–I/O15) Read Active (ICC) L H H L H L Data out (I/O0–I/O7); High Z (I/O8–I/O15) Read Active (ICC) L H H L L H High Z (I/O0–I/O7); Data out (I/O8–I/O15) Read Active (ICC) L H H H L H High Z Output disabled Active (ICC) L H H H H L High Z Output disabled Active (ICC) L H H H L L High Z Output disabled Active (ICC) L H L X L L Data in (I/O0–I/O15) Write Active (ICC) L H L X H L Data in (I/O0–I/O7); High Z (I/O8–I/O15) Write Active (ICC) L H L X L H High Z (I/O0–I/O7); Data in (I/O8–I/O15) Write Active (ICC) [38] X X Note 38. The ‘X’ (Do not care) state for the chip enables in the truth table refers to the logic state (either HIGH or LOW). Intermediate voltage levels on these pins is not permitted. Document Number: 001-15607 Rev. *G Page 12 of 18 CY62167E MoBL® Ordering Information The below table lists the CY62167ELL key package features and ordering codes. The table contains only the parts that are currently available. If you do not see what you are looking for, contact your local sales representative. For more information, visit the Cypress website at www.cypress.com and refer to the product summary page at http://www.cypress.com/products. Speed (ns) 45 Package Diagram Ordering Code CY62167ELL-45ZXI Package Type 51-85183 48-pin TSOP I (Pb-free) Operating Range Industrial Ordering Code Definitions CY 621 6 7 E LL - 45 Z X I Temperature Grade: I = Industrial Pb-free Package Type: Z = 48-pin TSOP I Speed Grade: 45 ns LL = Low Power Process Technology: 90 nm Bus width = × 16 Density = 16-Mbit Family Code: MoBL SRAM family Company ID: CY = Cypress Document Number: 001-15607 Rev. *G Page 13 of 18 CY62167E MoBL® Package Diagram Figure 9. 48-pin TSOP I (12 × 18.4 × 1.0 mm) Z48A Package Outline, 51-85183 51-85183 *D Document Number: 001-15607 Rev. *G Page 14 of 18 CY62167E MoBL® Acronyms Acronym Document Conventions Description Units of Measure BHE Byte High Enable BLE Byte Low Enable °C degree Celsius CMOS Complementary Metal Oxide Semiconductor MHz megahertz CE Chip Enable µA microampere I/O Input/Output mA milliampere OE Output Enable mm millimeter SRAM Static Random Access Memory ns nanosecond TSOP Thin Small Outline Package WE Write Enable Document Number: 001-15607 Rev. *G Symbol Unit of Measure Ω ohm % percent pF picofarad V volt W watt Page 15 of 18 CY62167E MoBL® Document History Page Document Title: CY62167E MoBL®, 16-Mbit (1 M × 16 / 2 M × 8) Static RAM Document Number: 001-15607 Rev. ECN No. Issue Date Orig. of Change ** 1103145 See ECN VKN New data sheet. *A 1138903 See ECN VKN Changed status from Preliminary to Final. Updated Electrical Characteristics: Added Note 9 and referred the same note in maximum value of VIL parameter. Changed ICC(max) spec from 2.8 mA to 4.0 mA for f = 1 MHz. Changed ICC(typ) spec from 22 mA to 25 mA for f = fmax. Changed ICC(max) spec from 25 mA to 30 mA for f = fmax. Updated Data Retention Characteristics: Changed maximum value of ICCDR parameter from 10 μA to 12 μA. Updated Switching Characteristics: Added Note 18 and referred the same note in “Parameter” column. *B 2934385 06/03/10 VKN Updated Electrical Characteristics: Updated details in “Test Conditions” column of ISB2 parameter (Included BHE, BLE to reflect byte power down feature). Updated Data Retention Characteristics: Updated details in “Test Conditions” column of ICCDR parameter (Included BHE, BLE to reflect byte power down feature). Updated Truth Table: Added Note 38 and referred the same note in X in CE1 and CE2 columns. Updated Package Diagram. Updated to new template. *C 3279426 06/10/2011 RAME Removed the Note “For best practice recommendations, refer to the Cypress application note AN1064, SRAM System Guidelines.” in page 1 and its reference in Functional Description. Updated Switching Characteristics (changed the Min value of tLZBE parameter). Updated to new template. *D 4024137 06/10/2013 MEMJ Updated Functional Description. Updated Electrical Characteristics: Added one more Test Condition “VCC = 5.5 V, IOH = –0.1 mA” for VOH parameter and added maximum value corresponding to that Test Condition. Added Note 8 and referred the same note in maximum value for VOH parameter corresponding to Test Condition “VCC = 5.5 V, IOH = –0.1 mA”. Updated Package Diagram: spec 51-85183 – Changed revision from *B to *C. *E 4101995 08/22/2013 VINI Updated Switching Characteristics: Updated Note 18. Updated to new template. *F 4578447 01/16/2015 VINI Updated Functional Description: Added “For a complete list of related documentation, click here.” at the end. Updated Switching Characteristics: Added Note 23 and referred the same note in “Write Cycle”. Updated Switching Waveforms: Added Note 35 and referred the same note in Figure 7. Updated Package Diagram: spec 51-85183 – Changed revision from *C to *D. Updated to new template. Document Number: 001-15607 Rev. *G Description of Change Page 16 of 18 CY62167E MoBL® Document History Page (continued) Document Title: CY62167E MoBL®, 16-Mbit (1 M × 16 / 2 M × 8) Static RAM Document Number: 001-15607 Rev. ECN No. Issue Date Orig. of Change Description of Change *G 4841338 07/20/2015 VINI Updated Maximum Ratings: Referred Notes 4, 5 in “Supply Voltage to Ground Potential”. Updated Thermal Resistance: Replaced “two-layer” with “four-layer” in “Test Conditions” column. Changed value of ΘJA parameter from 60 °C/W to 54.25 °C/W corresponding to 48-pin TSOP I package. Changed value of ΘJC parameter from 4.3 °C/W to 12.63 °C/W corresponding to 48-pin TSOP I package. Updated AC Test Loads and Waveforms: Updated Figure 1: Replaced “V” with “VTH” in part c. Completing Sunset Review. Document Number: 001-15607 Rev. *G Page 17 of 18 CY62167E MoBL® Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office closest to you, visit us at Cypress Locations. PSoC® Solutions Products Automotive Clocks & Buffers Interface Lighting & Power Control Memory PSoC Touch Sensing USB Controllers Wireless/RF cypress.com/go/automotive cypress.com/go/clocks cypress.com/go/interface cypress.com/go/powerpsoc cypress.com/go/memory cypress.com/go/psoc cypress.com/go/touch psoc.cypress.com/solutions PSoC 1 | PSoC 3 | PSoC 4 | PSoC 5LP Cypress Developer Community Community | Forums | Blogs | Video | Training Technical Support cypress.com/go/support cypress.com/go/USB cypress.com/go/wireless © Cypress Semiconductor Corporation, 2007-2015. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign), United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of, and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without the express written permission of Cypress. Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Use may be limited by and subject to the applicable Cypress software license agreement. Document Number: 001-15607 Rev. *G Revised July 20, 2015 All products and company names mentioned in this document may be the trademarks of their respective holders. Page 18 of 18