CY62168DV30 MoBL® 16-Mbit (2 M × 8) Static RAM 16-Mbit (2 M × 8) Static RAM Features ■ Very high speed ❐ 55 ns ■ Wide voltage range ❐ 2.2 V–3.6 V ■ Ultra-low active power ❐ Typical active current: 2 mA at f = 1 MHz ❐ Typical active current: 15 mA at f = fMax (55 ns Speed) ■ Ultra-low standby power ■ Easy memory expansion with CE1, CE2 and OE features ■ Automatic power-down when deselected ■ Complementary metal oxide semiconductor (CMOS) for optimum speed/power ■ Available in non Pb-free 48-ball very fine ball grid array (VFBGA) package. consumption. The device can be put into standby mode reducing power consumption by 90% when addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when deselected Chip Enable 1 (CE1) HIGH or Chip Enable 2 (CE2) LOW. The input/output pins (I/O0 through I/O7) are placed in a high-impedance state when: deselected Chip Enable 1 (CE1) HIGH or Chip Enable 2 (CE2) LOW, outputs are disabled (OE HIGH), or during a write operation (Chip Enable 1 (CE1) LOW and Chip Enable 2 (CE2) HIGH and WE LOW). Writing to the device is accomplished by taking Chip Enable 1 (CE1) LOW and Chip Enable 2 (CE2) HIGH and Write Enable (WE) input LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins(A0 through A20). Reading from the device is accomplished by taking Chip Enable 1 (CE1) and Output Enable (OE) LOW and Chip Enable 2 (CE2) HIGH while forcing Write Enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins appear on the I/O pins. The eight input/output pins (I/O0 through I/O7) are placed in a high-impedance state when the device is deselected (CE1 LOW and CE2 HIGH), the outputs are disabled (OE HIGH), or during a write operation (CE1 LOW and CE2 HIGH and WE LOW). See the Truth Table on page 10 for a complete description of read and write modes. Functional Description The CY62168DV30 is a high-performance CMOS static RAMs organized as 2048Kbit words by 8 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power For a complete list of related documentation, click here. Logic Block Diagram I/O0 Data in Drivers I/O1 2048K x 8 ARRAY I/O2 SENSE AMPS ROW DECODER A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 I/O3 I/O4 I/O5 COLUMN DECODER CE1 CE2 I/O6 POWER DOWN I/O7 A16 OE Cypress Semiconductor Corporation Document Number: 38-05329 Rev. *M A17 A18 A19 A20 A13 A14 A15 WE • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised December 3, 2015 CY62168DV30 MoBL® Contents Product Portfolio .............................................................. 3 Pin Configuration ............................................................. 3 Maximum Ratings ............................................................. 4 Operating Range ............................................................... 4 DC Electrical Characteristics .......................................... 4 Capacitance ...................................................................... 5 Thermal Resistance .......................................................... 5 AC Test Loads and Waveforms ....................................... 5 Data Retention Characteristics ....................................... 6 Data Retention Waveform ................................................ 6 Switching Characteristics ................................................ 7 Switching Waveforms ...................................................... 8 Truth Table ...................................................................... 10 Document Number: 38-05329 Rev. *M Ordering Information ...................................................... 11 Ordering Code Definitions ......................................... 11 Package Diagram ............................................................ 12 Acronyms ........................................................................ 13 Document Conventions ................................................. 13 Units of Measure ....................................................... 13 Document History Page ................................................. 14 Sales, Solutions, and Legal Information ...................... 15 Worldwide Sales and Design Support ....................... 15 Products .................................................................... 15 PSoC® Solutions ...................................................... 15 Cypress Developer Community ................................. 15 Technical Support ..................................................... 15 Page 2 of 15 CY62168DV30 MoBL® Product Portfolio Power Dissipation VCC Range (V) Product CY62168DV30LL Operating ICC (mA) Speed (ns) Min Typ [1] Max 2.2 3.0 3.6 f = 1 MHz Standby ISB2(A) f = fMax Typ [1] Max Typ [1] Max Typ [1] Max 2 4 15 30 2.5 22 55 Pin Configuration Figure 1. 48-ball VFBGA pinout (Top View) [2] 1 2 3 4 5 6 DNU OE A0 A1 A2 CE2 A DNU DNU A3 A4 CE1 DNU B I/O0 DNU A5 A6 DNU I/O4 C VSS I/O1 A17 A7 I/O5 VCC D VCC I/O2 DNU A16 I/O6 VSS E I/O3 DNU A14 A15 DNU I/O7 F DNU A20 A12 A13 WE DNU G A18 A8 A9 A10 A11 A19 H Notes 1. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ.), TA = 25 °C. 2. DNU pins have to be left floating or tied to VSS to ensure proper operation. Document Number: 38-05329 Rev. *M Page 3 of 15 CY62168DV30 MoBL® DC input voltage [3, 4] ...................–0.3 V to VCC(max) + 0.3 V Maximum Ratings Exceeding maximum ratings may shorten the useful life of the device. User guidelines are not tested. Storage temperature ................................ –65 °C to +150 °C Ambient temperature with power applied .......................................... –55 °C to +125 °C Supply voltage to ground potential ...................................... –0.3 V to VCC(max) + 0.3 V DC voltage applied to outputs in High-Z state [3, 4] ......................–0.3 V to VCC(max) + 0.3 V Output current into outputs (LOW) ............................. 20 mA Static discharge voltage (per MIL-STD-883, Method 3015) .......................... > 2001 V Latch-up current .................................................... > 200 mA Operating Range Range Ambient Temperature (TA) [5] VCC[6] Industrial –40 °C to +85 °C 2.2 V–3.6 V DC Electrical Characteristics Over the Operating Range Parameter VOH Description Output HIGH voltage VOL Output LOW voltage VIH Input HIGH voltage Test Conditions CY62168DV30-55 Min Typ [7] Max 2.2 V VCC 2.7 V IOH = 0.1 mA 2.0 – – 2.7 V VCC 3.6 V IOH = 1.0 mA 2.4 – – 2.2 V VCC 2.7 V IOL = 0.1 mA – – 0.4 2.7 V VCC 3.6 V IOL = 2.1 mA – – 0.4 2.2 V VCC 2.7 V 1.8 – VCC + 0.3 2.7 V VCC 3.6 V 2.2 – VCC + 0.3 2.2 V VCC 2.7 V –0.3 – 0.6 2.7 V VCC 3.6 V Unit V V V VIL Input LOW voltage –0.3 – 0.8 IIX Input leakage current GND VI VCC –1 – +1 A IOZ Output leakage current GND VO VCC, Output disabled –1 – +1 A ICC VCC operating supply current f = fMax = 1/tRC – 15 30 mA – 2 4 – 2.5 22 A – 2.5 22 A f = 1 MHz ISB1 Automatic CE power-down current – CMOS inputs ISB2 Automatic CE power-down current – CMOS inputs VCC = 3.6 V, IOUT = 0 mA, CMOS level CE1 VCC 0.2 V, CE2 0.2 V, VIN VCC 0.2 V or VIN 0.2 V, f = fMax (Address and data only), V f = 0 (OE, WE) CE1 > VCC 0.2 V, CE2 0.2 V, VIN VCC 0.2 V or VIN 0.2 V, f = 0, VCC = 3.6 V Notes 3. VIL(min) = –2.0 V for pulse durations less than 20 ns. 4. VIH(max) = VCC + 0.75 V for pulse durations less than 20 ns. 5. TA is the “Instant-On” case temperature. 6. Full device AC operation assumes a 100 s ramp time from 0 to VCC(min) and 100 s wait time after VCC stabilization. 7. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ.), TA = 25 °C. Document Number: 38-05329 Rev. *M Page 4 of 15 CY62168DV30 MoBL® Capacitance Parameter [8] Description CIN Input capacitance COUT Output capacitance Test Conditions TA = 25 °C, f = 1 MHz, VCC = VCC(typ.) Max Unit 8 pF 10 pF VFBGA Unit 55 C/W 16 C/W Thermal Resistance Parameter [8] Description JA Thermal resistance (junction to ambient) JC Thermal resistance (junction to case) Test Conditions Still air, soldered on a 3 × 4.5 inch, two-layer printed circuit board AC Test Loads and Waveforms Figure 2. AC Test Loads and Waveforms R1 VCC ALL INPUT PULSES VCC OUTPUT 50 pF R2 GND 10% 90% 10% 90% Fall time: 1 V/ns Rise Time: 1 V/ns INCLUDING JIG AND SCOPE Equivalent to: THEVENIN EQUIVALENT RTH OUTPUT Parameters 2.5 V VTH 3.0 V Unit R1 16600 1103 R2 15400 1554 RTH 8000 645 VTH 1.2 1.75 V Note 8. Tested initially and after any design or process changes that may affect these parameters. Document Number: 38-05329 Rev. *M Page 5 of 15 CY62168DV30 MoBL® Data Retention Characteristics Over the Operating Range Parameter Description VDR VCC for data retention ICCDR Data retention current Conditions VCC = 1.5 V, Min Typ [10] Max Unit 1.5 – 3.6 V – – 10 A CE1 > VCC – 0.2 V or CE2 < 0.2 V, VIN > VCC – 0.2 V or VIN < 0.2 V tCDR[9] Chip deselect to data retention time 0 – – ns tR[11] Operation recovery time 55 – – ns Data Retention Waveform Figure 3. Data Retention Waveform DATA RETENTION MODE VCC VCC(min) tCDR VDR 1.5 V VCC(min) tR CE1 or CE2 Notes 9. Tested initially and after any design or process changes that may affect these parameters. 10. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25 °C. 11. Full Device AC operation requires linear VCC ramp from VDR to VCC(min) > 100s or stable at VCC(min) > 100s. Document Number: 38-05329 Rev. *M Page 6 of 15 CY62168DV30 MoBL® Switching Characteristics Over the Operating Range Parameter [12] Description 55 ns Min Max Unit Read Cycle tRC Read cycle time 55 – ns tAA Address to data valid – 55 ns tOHA Data hold from address change 10 – ns tACE CE1 LOW and CE2 HIGH to data valid – 55 ns tDOE OE LOW to data valid – 25 ns 5 – ns – 20 ns tLZOE tHZOE OE LOW to low Z [13] OE HIGH to high Z [13, 14] [13] tLZCE CE1 LOW and CE2 HIGH to low Z 10 – ns tHZCE CE1 HIGH or CE2 LOW to high Z [13, 14] – 20 ns tPU CE1 LOW and CE2 HIGH to power-up 0 – ns CE1 HIGH or CE2 LOW to power-down – 55 ns tPD Write Cycle [15, 16] tWC Write cycle time 55 – ns tSCE CE1 LOW and CE2 HIGH to write end 40 – ns tAW Address setup to write end 40 – ns tHA Address hold from write end 0 – ns tSA Address setup to write start 0 – ns tPWE WE Pulse width 40 – ns tSD Data setup to write end 25 – ns tHD Data hold from write end 0 – ns tHZWE WE LOW to high Z [13, 14] – 20 ns 10 – ns tLZWE WE HIGH to low Z [13] Notes 12. Test conditions for all parameters other than tri-state parameters assume signal transition time of 3ns or less (1V/ns), timing reference levels of VCC(typ.)/2, input pulse levels of 0 to VCC(typ.), and output loading of the specified IOL/IOH as shown in the “AC Test Loads and Waveforms” section. 13. At any temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any device. 14. tHZOE, tHZCE, and tHZWE transitions are measured when the outputs enter a high impedance state. 15. The internal write time of the memory is defined by the overlap of WE, CE1 = VIL, and CE2 = VIH. All signals must be ACTIVE to initiate a write and any of these signals can terminate a write by going INACTIVE. The data input setup and hold timing should be referenced to the edge of the signal that terminates the write. 16. The minimum write pulse width for Write Cycle No. 3 (WE Controlled, OE LOW) should be equal to sum of tSD and tHZWE. Document Number: 38-05329 Rev. *M Page 7 of 15 CY62168DV30 MoBL® Switching Waveforms Figure 4. Read Cycle No. 1 (Address Transition Controlled) [17, 18] tRC ADDRESS tOHA DATA OUT tAA PREVIOUS DATA VALID DATA VALID Figure 5. Read Cycle No. 2 (OE Controlled) [18, 19] ADDRESS tRC CE1 CE2 tACE OE tHZOE tDOE tHZCE tLZOE HIGH IMPEDANCE DATA OUT DATA VALID tLZCE tPD tPU VCC SUPPLY CURRENT HIGH IMPEDANCE 50% 50% ICC ISB Figure 6. Write Cycle No. 1 (WE Controlled) [20, 21, 22] tWC ADDRESS tSCE CE1 CE2 tAW tSA tHA tPWE WE OE tSD DATA I/O See Note 23 tHD VALID DATA tHZOE Notes 17. Device is continuously selected. OE, CE1 = VIL, CE2 = VIH. 18. WE is HIGH for read cycle. 19. Address valid prior to or coincident with CE1 transition LOW and CE2 transition HIGH. 20. The internal write time of the memory is defined by the overlap of WE, CE1 = VIL, and CE2 = VIH. All signals must be ACTIVE to initiate a write and any of these signals can terminate a write by going INACTIVE. The data input setup and hold timing should be referenced to the edge of the signal that terminates the write. 21. Data I/O is high impedance if OE = VIH. 22. If CE1 goes HIGH or CE2 goes LOW simultaneously with WE HIGH, the output remains in high-impedance state. 23. During this period, the I/Os are in output state and input signals should not be applied. Document Number: 38-05329 Rev. *M Page 8 of 15 CY62168DV30 MoBL® Switching Waveforms (continued) Figure 7. Write Cycle No. 2 (CE1 or CE2 Controlled) [24, 25, 26] tWC ADDRESS tSCE CE1 tSA CE2 tAW tHA tPWE WE OE tSD DATA I/O tHD VALID DATA Figure 8. Write Cycle No. 3 (WE Controlled, OE LOW) [27] tWC ADDRESS tSCE CE1 CE2 tAW tSA tHA tPWE WE tSD DATA I/O See Note 28 tHD VALID DATA tHZWE tLZWE Notes 24. The internal write time of the memory is defined by the overlap of WE, CE1 = VIL, and CE2 = VIH. All signals must be ACTIVE to initiate a write and any of these signals can terminate a write by going INACTIVE. The data input setup and hold timing should be referenced to the edge of the signal that terminates the write. 25. Data I/O is high impedance if OE = VIH. 26. If CE1 goes HIGH or CE2 goes LOW simultaneously with WE HIGH, the output remains in high-impedance state. 27. The minimum write cycle pulse width should be equal to sum of tSD and tHZWE. 28. During this period, the I/Os are in output state and input signals should not be applied. Document Number: 38-05329 Rev. *M Page 9 of 15 CY62168DV30 MoBL® Truth Table CE1 CE2 WE OE Inputs/Outputs H X X X High Z Deselect/Power-down Standby (ISB) X L X X High Z Deselect/Power-down Standby (ISB) L H H L Data out (I/O0–I/O7) Read Active (ICC) L H L X Data in (I/O0–I/O7) Write Active (ICC) L H H H High Z Output disabled Active (ICC) Document Number: 38-05329 Rev. *M Mode Power Page 10 of 15 CY62168DV30 MoBL® Ordering Information The following table contains only the parts that are currently available. If you do not see what you are looking for, contact your local sales representative. For more information, visit the Cypress website at http://www.cypress.com and see product summary page at http://www.cypress.com/products. Cypress maintains a worldwide network of offices, solution centers, manufacturers representatives and distributors. To find the office closest to you, visit us at http://www.cypress.com/go/datasheet/offices. Speed (ns) 55 Ordering Code CY62168DV30LL-55BVI Package Diagram Package Type 51-85178 48-ball FBGA (8 × 9.5 × 1 mm) Operating Range Industrial Please contact your local Cypress sales representative for availability of these parts. Ordering Code Definitions CY 621 6 8 D V30 LL - 55 BV I Temperature Range: I = Industrial Package Type: BV = 48-ball FBGA Speed Grade: 55 ns Low Power Voltage Range: 3 V Typical Process Technology: 130 nm Technology Bus Width: 8 = × 8 Density: 6 = 16-Mbit Family Code: 621 = MoBL SRAM family Company ID: CY = Cypress Document Number: 38-05329 Rev. *M Page 11 of 15 CY62168DV30 MoBL® Package Diagram Figure 9. 48-ball VFBGA (8 × 9.5 × 1.0 mm) BV48B Package Outline, 51-85178 51-85178 *C Document Number: 38-05329 Rev. *M Page 12 of 15 CY62168DV30 MoBL® Acronyms Acronym Document Conventions Description Units of Measure CMOS Complementary Metal Oxide Semiconductor I/O Input/Output °C degree Celsius SRAM Static Random Access Memory MHz megahertz VFBGA Very Fine-Pitch Ball Grid Array A microampere Thin Small Outline Package mA milliampere ns nanosecond ohm pF picofarad V volt W watt TSOP Document Number: 38-05329 Rev. *M Symbol Unit of Measure Page 13 of 15 CY62168DV30 MoBL® Document History Page Document Title: CY62168DV30 MoBL®, 16-Mbit (2 M × 8) Static RAM Document Number: 38-05329 Revision ECN Orig. of Change Submission Date ** 118409 GUG 09/30/02 New data sheet. *A 123693 DPM 02/05/03 Changed status from Advance Information to Preliminary. Added Package Diagram. Description of Change *B 126556 DPM 04/24/03 Minor change: Change sunset owner from DPM to HRT *C 132869 XRJ 01/15/04 Changed status from Preliminary to Final. *D 272589 PCI See ECN Added Pb-free package related information in all instances across the document. Updated Ordering Information. *E 335864 PCI See ECN Updated Pin Configuration: Updated Figure 1 (Added Address A20 to ball G2). Updated Ordering Information: Removed redundant packages. *F 492895 VKN See ECN Changed address of Cypress Semiconductor Corporation on Page 1 from “3901 North First Street” to “198 Champion Court” Removed 70 ns speed bin related information in all instances across the document. Removed Low Power parts related information in all instances across the document. Updated Ordering Information. *G 2914085 NIKM 04/15/10 Updated Ordering Information: Removed inactive parts. Updated Package Diagram. *H 3070774 RAME 10/27/10 Changed all table notes to footnotes in all instances across the document. Added Ordering Code Definitions. Added Acronyms and Units of Measure. Updated to new template. *I 3090588 AJU 11/19/10 Post to external web. *J 3329789 RAME 07/27/11 Updated Functional Description: Removed Note “For best-practice recommendations, please refer to the Cypress application note entitled System Design Guidelines, available at http://www.cypress.com website” and its reference. Updated to new template. *K 4192919 VINI 11/15/2013 Updated Package Diagram: spec 51-85178 – Changed revision from *A to *C. Updated to new template. Completing Sunset Review. *L 4574377 VINI 11/19/2014 Updated Functional Description: Added “For a complete list of related documentation, click here.” at the end. *M 5036233 VINI 12/03/2015 Updated Switching Characteristics: Added Note 16 and referred the same note in “Write Cycle”. Updated Switching Waveforms: Added Note 27 and referred the same note in Figure 8. Updated to new template. Completing Sunset Review. Document Number: 38-05329 Rev. *M Page 14 of 15 CY62168DV30 MoBL® Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office closest to you, visit us at Cypress Locations. PSoC® Solutions Products Automotive Clocks & Buffers Interface Lighting & Power Control Memory cypress.com/go/automotive cypress.com/go/clocks cypress.com/go/interface cypress.com/go/powerpsoc cypress.com/go/memory PSoC cypress.com/go/psoc Touch Sensing cypress.com/go/touch USB Controllers Wireless/RF psoc.cypress.com/solutions PSoC 1 | PSoC 3 | PSoC 4 | PSoC 5LP Cypress Developer Community Community | Forums | Blogs | Video | Training Technical Support cypress.com/go/support cypress.com/go/USB cypress.com/go/wireless © Cypress Semiconductor Corporation, 2002-2015. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign), United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of, and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without the express written permission of Cypress. Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Use may be limited by and subject to the applicable Cypress software license agreement. Document Number: 38-05329 Rev. *M Revised December 3, 2015 Page 15 of 15 MoBL is a registered trademark, and More Battery Life is a trademark, of Cypress Semiconductor. All product and company names mentioned in this document are trademarks of their respective holders