CY7C1062DV33 16-Mbit (512 K × 32) Static RAM 16-Mbit (512 K × 32) Static RAM Features Functional Description ■ High speed ❐ tAA = 10 ns The CY7C1062DV33 is a high performance CMOS Static RAM organized as 524,288 words by 32 bits. ■ Low active power ❐ ICC = 175 mA at 100 MHz ■ Low complementary metal oxide semiconductor (CMOS) standby power ❐ ISB2 = 25 mA ■ Operating voltages of 3.3 ± 0.3 V To write to the device, take Chip Enables (CE1, CE2, and CE3 LOW) and Write Enable (WE) input LOW. If Byte Enable A (BA) is LOW, then data from I/O pins (I/O0 through I/O7) is written into the location specified on the address pins (A0 through A18). If Byte Enable B (BB) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A18). Likewise, BC and BD correspond with the I/O pins I/O16 to I/O23 and I/O24 to I/O31, respectively. ■ 2.0 V data retention ■ Automatic power down when deselected ■ Transistor-transistor logic (TTL) compatible inputs and outputs ■ Easy memory expansion with CE1, CE2, and CE3 features ■ Available in Pb-free 119-ball plastic ball grid array (PBGA) package To read from the device, take Chip Enables (CE1, CE2, and CE3 LOW) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If the first BA is LOW, then data from the memory location specified by the address pins appear on I/O0 to I/O7. If BB is LOW, then data from memory appears on I/O8 to I/O15. Likewise, Bc and BD correspond to the third and fourth bytes. See Truth Table on page 10 for a complete description of read and write modes. The input and output pins (I/O0 through I/O31) are placed in a high impedance state when the device is deselected (CE1, CE2, or CE3 HIGH), the outputs are disabled (OE HIGH), the byte selects are disabled (BA-D HIGH), or during a write operation (CE1, CE2 and CE3 LOW and WE LOW). For a complete list of related documentation, click here. OUTPUT BUFFERS 512 K x 32 ARRAY SENSE AMPS A(9:0) ROW DECODER INPUT BUFFERS CONTROL LOGIC Logic Block Diagram I/O0–I/O31 WE CE1 CE2 CE3 OE BA BB BC BD COLUMN DECODER A(18:10) Cypress Semiconductor Corporation Document Number: 38-05477 Rev. *I • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised November 19, 2014 CY7C1062DV33 Contents Selection Guide ................................................................ 3 Pin Configuration ............................................................. 3 Maximum Ratings ............................................................. 4 Operating Range ............................................................... 4 DC Electrical Characteristics .......................................... 4 Capacitance ...................................................................... 5 Thermal Resistance .......................................................... 5 AC Test Loads and Waveforms ....................................... 5 AC Switching Characteristics ......................................... 6 Data Retention Characteristics ....................................... 7 Over the Operating Range ............................................... 7 Data Retention Waveform ................................................ 7 Switching Waveforms ...................................................... 7 Truth Table ...................................................................... 10 Document Number: 38-05477 Rev. *I Ordering Information ...................................................... 11 Ordering Code Definitions ......................................... 11 Package Diagram ............................................................ 12 Acronyms ........................................................................ 13 Document Conventions ................................................. 13 Units of Measure ....................................................... 13 Document History ........................................................... 14 Sales, Solutions, and Legal Information ...................... 15 Worldwide Sales and Design Support ....................... 15 Products .................................................................... 15 PSoC Solutions ......................................................... 15 Page 2 of 15 CY7C1062DV33 Selection Guide -10 Unit Maximum access time Description 10 ns Maximum operating current 175 mA Maximum CMOS standby current 25 mA Pin Configuration Figure 1. 119-ball PBGA (Top View) [1] 1 2 3 4 5 6 7 A I/O16 A A A A A I/O0 B C D E F G H J K L M N P I/O17 I/O18 I/O19 A Bc VDD A CE2 VSS CE1 NC VSS A CE3 VSS A Ba VDD I/O1 I/O2 I/O3 I/O20 VSS VDD VSS VDD VSS I/O4 I/O21 VDD VSS VSS VSS VDD I/O5 I/O22 VSS VDD VSS VDD VSS I/O6 I/O23 NC VDD VSS VSS VDD VSS VSS VSS VDD VDD VSS I/O7 NC I/O24 I/O25 VDD VSS VSS VDD VSS VSS VSS VDD VDD VSS I/O8 I/O9 I/O10 R T U I/O26 VDD VSS VSS VSS VDD I/O27 VSS VDD VSS VDD VSS I/O11 I/O28 VDD VSS VSS VSS VDD I/O12 I/O29 A Bd NC Bb A I/O13 I/O30 A A WE A A I/O14 I/O31 A A OE A A I/O15 Note 1. NC pins are not connected on the die. Document Number: 38-05477 Rev. *I Page 3 of 15 CY7C1062DV33 DC input voltage [2] ............................. –0.5 V to VCC + 0.5 V Maximum Ratings Exceeding maximum ratings may shorten the useful life of the device. These user guidelines are not tested. Storage temperature ................................ –65 C to +150 C Ambient temperature with power applied .......................................... –55 C to +125 C Current into outputs (LOW) ........................................ 20 mA Static discharge voltage (MIL-STD-883, method 3015) .................................. >2001 V Latch-up current ..................................................... >200 mA Operating Range Supply voltage on VCC relative to GND [2] ................................–0.5 V to +4.6 V DC voltage applied to outputs in High Z state [2] ................................ –0.5 V to VCC + 0.5 V Range Ambient Temperature VCC Industrial –40 C to +85 C 3.3 V 0.3 V DC Electrical Characteristics Over the Operating Range Parameter Description Test Conditions [3] VOH Output HIGH voltage Min VCC, IOH = –4.0 mA VOL Output LOW voltage Min VCC, IOL = 8.0 mA VIH Input HIGH voltage [2] -10 Min Max Unit 2.4 – V – 0.4 V 2.0 VCC + 0.3 V VIL Input LOW voltage –0.3 0.8 V IIX Input leakage current GND < VIN < VCC –1 +1 A IOZ Output leakage current GND < VOUT < VCC, output disabled –1 +1 A ICC VCC operating supply current VCC = Max, f = fMAX = 1/tRC, IOUT = 0 mA, CMOS levels – 175 mA ISB1 Automatic CE power-down current – TTL Inputs Max VCC, CE > VIH, VIN > VIH or VIN < VIL, f = fMAX – 30 mA ISB2 Automatic CE power-down current – CMOS Inputs Max VCC, CE > VCC – 0.3 V, VIN > VCC – 0.3 V, or VIN < 0.3 V, f = 0 – 25 mA Notes 2. VIL(min) = –2.0 V and VIH(max) = VCC + 2 V for pulse durations of less than 20 ns. 3. CE indicates a combination of all three chip enables. When active LOW, CE indicates the CE1 , CE2 ,and CE3 LOW. When HIGH, CE indicates the CE1, CE2, or CE3 HIGH. Document Number: 38-05477 Rev. *I Page 4 of 15 CY7C1062DV33 Capacitance Parameter [4] Description CIN Input capacitance COUT I/O capacitance Test Conditions Max TA = 25 C, f = 1 MHz, VCC = 3.3 V Unit 8 pF 10 pF Thermal Resistance Parameter [4] Description JA Thermal resistance (Junction to ambient) JC Thermal resistance (Junction to case) Test Conditions 119-ball PBGA Unit Still air, soldered on a 3 × 4.5 inch, four layer printed circuit board. 20.31 C/W 8.35 C/W AC Test Loads and Waveforms Figure 2. AC Test Loads and Waveforms [5] 50 OUTPUT Z0 = 50 R1 317 3.3V VTH = 1.5 V OUTPUT 30 pF* R2 351 5 pF* *Including jig and scope (a) *Capacitive Load consists of all components of the test environment 3.0V GND (b) All input pulses 90% 10% 90% 10% Fall Time:> 1 V/ns Rise Time > 1 V/ns (c) Notes 4. Tested initially and after any design or process changes that may affect these parameters. 5. Valid SRAM operation does not occur until the power supplies have reached the minimum operating VDD (3.0 V). 100 s (tpower) after reaching the minimum operating VDD, normal SRAM operation begins including reduction in VDD to the data retention (VCCDR, 2.0 V) voltage. Document Number: 38-05477 Rev. *I Page 5 of 15 CY7C1062DV33 AC Switching Characteristics Over the Operating Range Parameter [6] Description -10 Min Max Unit Read Cycle tpower VCC(typical) to the first access [7] 100 – s tRC Read cycle time 10 – ns tAA Address to data valid – 10 ns tOHA Data hold from address change 3 – ns tACE CE Active LOW to data valid [8] – 10 ns tDOE OE LOW to data valid – 5 ns 1 – ns – 5 ns [9] tLZOE OE LOW to low Z tHZOE OE HIGH to high Z [9] tLZCE 3 – ns CE Deselect HIGH to high Z [8, 9] – 5 ns tPU CE Active LOW to power-up [8, 10] 0 – ns tPD CE Deselect HIGH to power-down [8, 10] – 10 ns tDBE Byte enable to data valid 5 ns 1 – ns – 5 ns 10 – ns 7 – ns tHZCE tLZBE tHZBE CE Active LOW to low Z [8, 9] Byte enable to low Z [9] Byte disable to high Z [9] Write Cycle [11, 12] tWC Write cycle time [8] tSCE CE Active LOW to write end tAW Address setup to write end 7 – ns tHA Address hold from write end 0 – ns tSA Address setup to write start 0 – ns tPWE WE pulse width 7 – ns tSD Data setup to write end 5.5 – ns tHD Data hold from write end 0 – ns WE HIGH to low Z [9] 3 – ns tHZWE WE LOW to high Z [9] – 5 ns tBW Byte enable to end of write 7 – ns tLZWE Notes 6. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, and input pulse levels of 0 to 3.0V. Test conditions for the read cycle use output loading as shown in (a) of Figure 2 on page 5, unless specified otherwise. 7. tPOWER gives the minimum amount of time that the power supply is at typical VCC values until the first memory access is performed. 8. CE indicates a combination of all three chip enables. When active LOW, CE indicates the CE1 , CE2 ,and CE3 LOW. When HIGH, CE indicates the CE1, CE2, or CE3 HIGH. 9. tHZOE, tHZCE, tHZWE, tHZBE, tLZOE, tLZCE, tLZWE, and tLZBE are specified with a load capacitance of 5 pF as in (b) of Figure 2 on page 5. Transition is measured ±200 mV from steady state voltage. 10. These parameters are guaranteed by design and are not tested. 11. The internal write time of the memory is defined by the overlap of CE1 LOW, CE2 LOW, CE3 LOW and WE LOW. Chip enables must be active and WE must be LOW to initiate a write, and the transition of any of these signals terminate the write. The input data setup and hold timing are referenced to the leading edge of the signal that terminates the write. 12. The minimum write cycle time for Write Cycle No.2 (WE controlled, OE LOW) is the sum of tHZWE and tSD. Document Number: 38-05477 Rev. *I Page 6 of 15 CY7C1062DV33 Data Retention Characteristics Over the Operating Range Parameter Conditions [13] Description VDR VCC for data retention ICCDR Data retention current tCDR [15] Chip deselect to data retention time tR [16] Operation recovery time VCC = 2 V, CE > VCC – 0.2 V, VIN > VCC – 0.2 V, or VIN < 0.2 V Min Typ [14] Max Unit 2 – – V – – 25 mA 0 – – ns tRC – – ns Data Retention Waveform Figure 3. Data Retention Waveform DATA RETENTION MODE VCC 3.0 V VDR > 2V tCDR 3.0 V tR CE Switching Waveforms Figure 4. Read Cycle No. 1 (Address Transition Controlled) [17, 18] tRC RC ADDRESS tOHA DATA I/O PREVIOUS DATA VALID tAA DATA OUT VALID Notes 13. CE indicates a combination of all three chip enables. When active LOW, CE indicates the CE1 , CE2 ,and CE3 LOW. When HIGH, CE indicates the CE1, CE2, or CE3 HIGH 14. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25 °C. 15. Tested initially and after any design or process changes that affects these parameters. 16. Full device operation requires linear VCC ramp from VDR to VCC(min) > 50 s or stable at VCC(min) > 50 s. 17. Device is continuously selected. OE, CE, BA, BB, BC, BD = VIL. 18. WE is HIGH for read cycle. Document Number: 38-05477 Rev. *I Page 7 of 15 CY7C1062DV33 Switching Waveforms (continued) Figure 5. Read Cycle No. 2 (OE Controlled) [19, 20, 21] ADDRESS tRC CE tACE OE tHZOE tDOE BA, BB, BC , BD tLZOE tHZCE tDBE tLZBE DATA I/O tHZBE HIGH IMPEDANCE DATA OUT VALID tLZCE VCC SUPPLY CURRENT HIGH IMPEDANCE tPD tPU 50% 50% ICC ISB Figure 6. Write Cycle No. 1 (CE Controlled) [19, 21, 22, 23] tWC ADDRESS CE tSA tSCE tAW tHA tPWE WE tBW BA, BB, BC, BD tSD DATA I/O tHD DATA IN VALID Notes 19. CE indicates a combination of all three chip enables. When active LOW, CE indicates the CE1 , CE2 ,and CE3 LOW. When HIGH, CE indicates the CE1, CE2, or CE3 HIGH. 20. WE is HIGH for read cycle. 21. Address valid before or similar to CE transition LOW. 22. Data I/O is high impedance if OE or BA, BB, BC, BD = VIH. 23. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high impedance state. Document Number: 38-05477 Rev. *I Page 8 of 15 CY7C1062DV33 Switching Waveforms (continued) Figure 7. Write Cycle No. 2 (WE Controlled, OE LOW) [24, 25, 26, 27] tWC ADDRESS tSCE CE tAW tHA tSA tPWE WE tBW BA, BB, BC, BD tHZWE tSD tHD DATA IN VALID DATA I/O tLZWE Figure 8. Write Cycle No. 3 (BA, BB, BC, BD Controlled) [24] tWC ADDRESS tSA tBW BA, BB, BC, BD tAW tHA tPWE WE tSCE CE tSD DATA I/O tHD DATA IN VALID Notes 24. CE indicates a combination of all three chip enables. When active LOW, CE indicates the CE1 , CE2 ,and CE3 LOW. When HIGH, CE indicates the CE1, CE2, or CE3 HIGH. 25. Address valid before or similar to CE transition LOW. 26. Data I/O is high impedance if OE or BA, BB, BC, BD = VIH. 27. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high impedance state. Document Number: 38-05477 Rev. *I Page 9 of 15 CY7C1062DV33 Truth Table CE1 CE2 CE3 OE WE BA BB Bc BD I/O0–I/O7 I/O8–I/O15 I/O16–I/O23 I/O24–I/O31 Mode Power H X X X X X X X X High Z High Z High Z High Z power-down (ISB) X H X X X X X X X High Z High Z High Z High Z power-down (ISB) X X H X X X X X X High Z High Z High Z High Z power-down (ISB) L L L L H L L L L Data out Data out Data out Data out Read all bits (ICC) L L L L H L H H H Data out High Z High Z High Z Read byte A bits only (ICC) L L L L H H L H H High Z Data out High Z High Z Read byte B bits only (ICC) L L L L H H H L H High Z High Z Data out High Z Read byte C bits only (ICC) L L L L H H H H L High Z High Z High Z Data out Read Byte D bits only (ICC) L L L X L L L L L Data in Data in Data in Data in Write all bits (ICC) L L L X L L H H H Data in High Z High Z High Z Write byte A bits only (ICC) L L L X L H L H H High Z Data in High Z High Z Write byte B bits only (ICC) L L L X L H H L H High Z High Z Data in High Z Write byte C bits only (ICC) L L L X L H H H L High Z High Z High Z Data in Write byte D bits only (ICC) L L L H H X X X X High Z High Z High Z High Z Selected, outputs disabled (ICC) L L L X X H H H H High Z High Z High Z High Z Selected, outputs disabled (ICC) Document Number: 38-05477 Rev. *I Page 10 of 15 CY7C1062DV33 Ordering Information Speed (ns) 10 Ordering Code CY7C1062DV33-10BGI Package Diagram Package Type 51-85115 119-ball Plastic Ball Grid Array (14 × 22 × 2.4 mm) CY7C1062DV33-10BGXI Operating Range Industrial 119-ball Plastic Ball Grid Array (14 × 22 × 2.4 mm) (Pb-free) Ordering Code Definitions CY 7 C 1 06 2 D V33 - 10 BG X I Temperature Range: I = Industrial Pb-free Package Type: BG = 119-ball PBGA Speed: 10 ns Voltage range: V33 = 3 V to 3.6 V Process Technology: D = C9, 90 nm Data width: 2 = × 32-bits 06 = 16-Mbit density 1 = Fast Asynchronous SRAM family Technology Code: C = CMOS Marketing Code: 7 = SRAM Company ID: CY = Cypress Document Number: 38-05477 Rev. *I Page 11 of 15 CY7C1062DV33 Package Diagram Figure 9. 119-ball PBGA (14 × 22 × 2.4 mm) BG119 Package Outline, 51-85115 51-85115 *D Document Number: 38-05477 Rev. *I Page 12 of 15 CY7C1062DV33 Acronyms Acronym Document Conventions Description Units of Measure CE chip enable CMOS complementary metal oxide semiconductor °C degree Celsius I/O input/output MHz megahertz OE output enable A microampere PBGA plastic ball grid array s microsecond SRAM static random access memory mA milliampere TTL transistor-transistor logic ns nanosecond WE write enable ohm % percent pF picofarad V volt W watt Document Number: 38-05477 Rev. *I Symbol Unit of Measure Page 13 of 15 CY7C1062DV33 Document History Document Title: CY7C1062DV33, 16-Mbit (512 K × 32) Static RAM Document Number: 38-05477 Rev. ECN No. Orig. of Change Submission Date ** 201560 SWI See ECN Advance data sheet for C9 IPP *A 233748 RKF See ECN AC, DC parameters are modified as per EROS (Spec # 01-2165) Pb-free offering in the Ordering Information *B 469420 NXR See ECN Converted from Advance Information to Preliminary Removed –8 and –12 speed bins from product offering Removed Commercial operating Range Changed J7 Ball of PBGA from DNU to NC in the pinout diagram Included the Maximum ratings for Static Discharge Voltage and Latch Up Current on page 2 Changed ICC(Max) from 220 mA to 150 mA Changed ISB1(Max) from 70 mA to 30 mA Changed ISB2(Max) from 40 mA to 25 mA Specified the Overshoot specification in footnote 1 Changed tSD from 5.5 ns to 5 ns Added Data Retention Characteristics table and waveform on page 5. Updated the 48-pin FBGA package Updated the Ordering Information Table *C 499604 NXR See ECN Added note 1 for NC pins Updated Test Condition for ICC in DC Electrical Characteristics table Added note for tACE, tLZCE, tHZCE, tPU, tPD, and tSCE in AC Switching Characteristics Table on page 4 *D 1462583 VKN / AESA See ECN Converted from preliminary to final Updated block diagram Changed ICC spec from 150 mA to 175 mA Updated thermal specs *E 2541850 VKN / PYRS 07/22/08 Added -10BGI part in the Ordering Information table *F 3109102 AJU 12/13/2010 Added Ordering Code Definitions. Updated Package Diagram. *G 3137613 PRAS 01/13/2011 Added Acronyms and Units of Measure. Updated datasheet as per template Updated all footnotes sequentially *H 3416006 TAVA 10/20/2011 Updated Features. Updated DC Electrical Characteristics. Updated Switching Waveforms. Updated in new template. *I 4574311 TAVA 11/19/2014 Added related documentation hyperlink in page 1. Updated Figure 9 in Package Diagram (spec 51-85115 *C to *D). Document Number: 38-05477 Rev. *I Description of Change Page 14 of 15 CY7C1062DV33 Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office closest to you, visit us at cypress.com/sales. Products Automotive Interface Lighting & Power Control PSoC Solutions cypress.com/go/automotive Clocks & Buffers cypress.com/go/clocks psoc.cypress.com/solutions cypress.com/go/interface PSoC 1 | PSoC 3 | PSoC 5 cypress.com/go/powerpsoc cypress.com/go/plc Memory cypress.com/go/memory Optical & Image Sensing cypress.com/go/image PSoC cypress.com/go/psoc Touch Sensing cypress.com/go/touch USB Controllers Wireless/RF cypress.com/go/USB cypress.com/go/wireless © Cypress Semiconductor Corporation, 2004-2014. The information contained herein is subject to change without notice. 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Document Number: 38-05477 Rev. *I Revised November 19, 2014 All products and company names mentioned in this document may be the trademarks of their respective holders. Page 15 of 15