Document No. 001-82813 Rev. ** ECN #3742756 Cypress Semiconductor Product Qualification Report QTP# 082506 VERSION 2.0 September, 2012 PCI-E Clock Family R52T-3 Technology, Fab 4 CY28437 CLOCK GENERATOR FOR INTEL® GRANTSDALE CHIPSET CY24291 CY24292 PCI-E GENERAL CLOCKS CY24293 CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Mira Ben-Tzur Reliability Director (408) 943-2675 Zhaomin Ji Principal Reliability Engineer (408) 432-7021 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 11 Document No. 001-82813 Rev. ** ECN #3742756 PRODUCT QUALIFICATION HISTORY Description of Qualification Purpose Qual Report Date Comp 024604 R52T-3 Technology Process Derivative Qual May 03 040903 New Device B30M (CY28437) Base Die in R52T-3 Technology Feb 05 082506 Qualification of new PCI-E Clock devices 7C8B049A and 7C8B050A - a 6-layer mask option from previously qualified B30M die Dec 08 PCIe Clock Devices Mkt Part# BE Part# Package Device CY24291 7C8B3091A 48TSSOP / ZZ48 7C8B049AC CY24292 7C8B3092A 32QFN / LQ32 7C8B049AC CY24293 7C8B3093A 16TSSOP / ZZ16 7C8B050AC Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 11 Document No. 001-82813 Rev. ** ECN #3742756 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Qualification of new PCI-E Clock devices 7C8B049A and 7C8B050A - a 6-layer mask option from previously qualified B30M 6C8B001AC die – R52T-3 technology fabricated at CMI (Fab4) CY24291, CY24292, CY24293 Marketing Part # Device Description: PCI-E General Clock, 3.3V available in 48-TSSOP, 16-TSSOP, 32-QFN Cypress Division: Cypress Semiconductor Corporation – Memory Product Division Overall Die (or Mask) REV Level (pre-requisite for qualification): Rev. A What ID markings on Die: CY7C8B049A/50A TECHNOLOGY/FAB PROCESS DESCRIPTION R52D-3 Number of Metal Layers: 3 Passivation Type and Materials: Metal Composition: Metal 1: 500Å TiW / 6000Å Al / 500Å TiW Metal 2: 500Å TiW / 6000Å Al / 500Å TiW Metal 3: 300Å Ti / 8000Å Al / 300Å TiW 1000Å SiO2 / 9000Å Si3N4 Generic Process Technology/Design Rule (-drawn): CMOS – Triple Metal, 0.25μm Gate Oxide Material/Thickness (MOS): SiO2, 55Å Name/Location of Die Fab (prime) Facility: Cypress Semiconductor - Bloomington, MN Die Fab Line ID/Wafer Process ID: Fab4/R52T-3 PACKAGE AVAILABILITY ASSEMBLY SITE FACILITY PACKAGE 48-Lead TSSOP APPI-ANAM Manila, Philippines 16-Lead TSSOP Cypress CML Autoline, Philippines 32-Lead QFN Amkor Technology, Philippines Note: Package Qualification details upon request Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 11 Document No. 001-82813 Rev. ** ECN #3742756 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: Various 48-TSSOP/ZZ48, 32-QFN/LQ32, 16-TSSOP/ZZ16 48TSSOP : G700K 32 QFN : Nitto 7470-LA 16TSSOP : CEL9200CYR Lead Frame Material: Copper Lead Finish, Composition / Thickness: 20-80u NiPdAu lead finish 48TSSOP : Abelstik 8290 32QFN : AMK-06 16TSSOP : QMI-509 48TSSOP & 32QFN: Au/ Diam: 0.8, 16TSSOP: Au / Diam : 0.9 Die Attach Material: Wire Material/Size: Name/Location of Assembly (prime) facility: 48 TSSOP @M , 16TSSOP @RA , 32QFN @MB MSL: 3 Solder Reflow Temp: 260C ELECTRICAL TEST / FINISH DESCRIPTION Test Location: 48 TSSOP and 32 QFN – Cypress CML-R, Philippines 16 TSSOP – Cypress CML-RA, Philippines Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 11 Document No. 001-82813 Rev. ** ECN #3742756 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT Stress/Test Test Condition (Temp/Bias) Result P/F Dynamic Operating Condition, Vcc Max = 3.8V, 125°C P High Temperature Operating Life Latent Failure Rate Dynamic Operating Condition, Vcc Max = 3.8V, 125°C P High Accelerated Saturation Test (HAST) 130°C, 3.63V, 85%RH Precondition: JESD22 Moisture Sensitivity MSL 3 192 Hrs, 30C/60%RH+3IR-Reflow, 235°C+0, -5°C P Temperature Cycle MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C Precondition: JESD22 Moisture Sensitivity MSL 1 168 Hrs, 85C/85%RH+3IR-Reflow, 235°C+0, -5°C 168 Hrs, 85C/85%RH+3IR-Reflow, 260°C+0, -5°C P Pressure Cooker 121°C, 100%RH P High Temperature Operating Life Early Failure Rate Precondition: JESD22 Moisture Sensitivity MSL 1 168 Hrs, 85C/85%RH+3IR-Reflow, 235°C+0, -5°C 168 Hrs, 85C/85%RH+3IR-Reflow, 260°C+0, -5°C Electrostatic Discharge Human Body Model (ESD-HBM) 3,300V Electrostatic Discharge Charge Device Model (ESD-CDM) 500V Electrostatic Discharge 200V P Acoustic Microscopy, MSL 3 J-STD-020 P Static Latch-up 6.5V,± 240mA, 125°C, EIA/JESD78 P P JESD22, Method A114-B P JESD22-C101 Machine Model (ESD-MM) Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 11 Document No. 001-82813 Rev. ** ECN #3742756 RELIABILITY FAILURE RATE SUMMARY Stress/Test High Temperature Operating Life 5 Device Tested/ Device Hours # Fails Activation Energy Thermal AF4 Failure Rate 1,000 Devices 0 N/A N/A 0 PPM 547,000 DHRs 0 0.7 55 30 FIT 1 Early Failure Rate High Temperature Operating 2,3 Life Long Term Failure Rate 1 2 3 4 A production burn-in of 24 Hrs at 150C, 4.5V is required for the product. Assuming an ambient temperature of 55C and a junction temperature rise of 15C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. -5 k = Boltzmann's constant = 8.62x10 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 11 Document No. 001-82813 Rev. ** ECN #3742756 Reliability Test Data QTP #: 024604 Device Fab Lot # Assy Lot # Assy Loc Duration TAIWN-G COMP Samp Rej Failure Mechanism STRESS: ACOUSTIC, MSL3 CY6981-BA (7C6981A) 4223346 610243127/3004 18 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125, 3.8V, Vcc Max) CY6981-BA (7C6981A) 4147861 610221501/2/27521 TAIWN-G 96 1342 0 CY6981-BA (7C6981A) 4238026 610250542 TAIWN-G 96 1020 0 CY6981-BA (7C6981A) 4223346 610243127/3004/7 TAIWN-G 96 1015 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 3.8V, Vcc Max) CY6981-BA (7C6981A) 4147861 610221501/2 TAIWN-G 168 182 0 CY6981-BA (7C6981A) 4147861 610221501/2 TAIWN-G 500 182 0 CY6981-BA (7C6981A) 4147861 610221501/2 TAIWN-G 1000 182 0 CY6981-BA (7C6981A) 4223346 610243127/3004/7 TAIWN-G 168 82 0 CY6981-BA (7C6981A) 4223346 610243127/3004/7 TAIWN-G 500 82 0 CY6981-BA (7C6981A) 4223346 610243127/3004/7 TAIWN-G 1000 80 0 CY6981-BA (7C6981A) 4238026 610250542 TAIWN-G 168 368 0 CY6981-BA (7C6981A) 4238026 610250542 TAIWN-G 500 368 0 STRESS: ESD-CHARGE DEVICE MODEL, (500V) CY6981-BA (7C6981A) 4147861 610221501/2/2752 TAIWN-G COMP 9 0 CY6981-BA (7C6981A) 4223346 610243127/3004 TAIWN-G COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015 (2,200V) CY6981-BA (7C6981A) 4147861 610221501/2/2752 TAIWN-G COMP 9 0 CY6981-BA (7C6981A) 4223346 610243127/3004 TAIWN-G COMP 9 0 STRESS: STATIC LATCH-UP (125C, 10V, +/-300mA) CY6981-BA (7C6981A) 4147861 610221501/2/2752 TAIWN-G COMP 3 0 CY6981-BA (7C6981A) 4238026 610250542 TAIWN-G COMP 3 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 192 HR 30C/60%RH (MSL3) CY6981-BA (7C6981A) 4147861 610221501/2/2752 TAIWN-G 168 50 0 CY6981-BA (7C6981A) 4223346 610243127/3004 TAIWN-G 168 48 0 CY6981-BA (7C6981A) 4223346 610243127/3004 TAIWN-G 288 48 0 CY6981-BA (7C6981A) 4238026 610250542 TAIWN-G 168 48 0 CY6981-BA (7C6981A) 4238026 610250542 TAIWN-G 288 48 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 11 Document No. 001-82813 Rev. ** ECN #3742756 Reliability Test Data QTP #: 024604 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 3.63V), PRE COND 192 HR 30C/60%RH (MSL3) CY6981-BA (7C6981A) 4147861 610221501/2/2752 TAIWN-G 128 50 0 CY6981-BA (7C6981A) 4223346 610243127/3004 TAIWN-G 128 47 0 STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH (MSL3) CY6981-BA (7C6981A) 4147861 610221501/2/2752 TAIWN-G 300 50 0 CY6981-BA (7C6981A) 4147861 610221501/2/2752 TAIWN-G 500 50 0 CY6981-BA (7C6981A) 4147861 610221501/2/2752 TAIWN-G 1000 50 0 CY6981-BA (7C6981A) 4223346 610243127/3004 TAIWN-G 300 48 0 CY6981-BA (7C6981A) 4223346 610243127/3004 TAIWN-G 500 48 0 CY6981-BA (7C6981A) 4223346 610243127/3004 TAIWN-G 1000 48 0 CY6981-BA (7C6981A) 4238026 610250542 TAIWN-G 300 48 0 CY6981-BA (7C6981A) 4238026 610250542 TAIWN-G 500 48 0 CY6981-BA (7C6981A) 4238026 610250542 TAIWN-G 1000 48 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 11 Document No. 001-82813 Rev. ** ECN #3742756 Reliability Test Data QTP #: 040903 Device STRESS: Fab Lot # Assy Lot # Assy Loc Duration Samp Rej COMP 9 0 COMP 9 0 3 0 Failure Mechanism ESD-CHARGE DEVICE MODEL, (500V) CY28437OXCT(7C828437A) 4444247 610463705 CML-R STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 2200V CY28437OXCT(7C828437A) 4444247 610463705 CML-R STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015 (2,200V) CY28437OXCT(7C828437A) 4444247 610463705 CML-R COMP STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125, 3.8V, Vcc Max) CY28437OXCT(7C828437A) 4444247 610463705 CML-R 96 442 0 CY28437OXCT(7C828437A) 4444247 610463737 CML-R 96 260 0 CY28437OXCT(7C828437A) 4444247 610463736 CML-R 96 298 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 192 HR 30C/60%RH (MSL3) CY28437OXCT(7C828437A) 4444247 610463705 CML-R 168 45 0 CML-R COMP 3 0 300 45 0 STRESS: STATIC LATCH-UP (125C, 8.48V, +/-300mA) CY28437OXCT(7C828437A) 4444247 610463705 STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH (MSL3) CY28437OXCT(7C828437A) 4444247 610463705 CML-R Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 11 Document No. 001-82813 Rev. ** ECN #3742756 Reliability Test Data QTP #: 082506 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 2200V CY24291ZXI 4820920 610847319 M COMP 8 0 CY24292ZXI 4820920 610849226 MB COMP 8 0 CY24293ZXI 4820920 610848451 RA COMP 8 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 3300V CY24291ZXI 4820920 610847319 M COMP 3 0 CY24292ZXI 4820920 610849226 MB COMP 3 0 CY24293ZXI 4820920 610848451 RA COMP 3 0 STRESS: STATIC LATCH-UP TESTING , 125C, 5.4V, ±200mA CY24291ZXI 4820920 610847319 M COMP 6 0 CY24292ZXI 4820920 610849226 MB COMP 6 0 CY24293ZXI 4820920 610848451 RA COMP 6 0 STRESS: STATIC LATCH-UP TESTING , 125C, 6.5V, ±240mA CY24291ZXI 4820920 610847319 M COMP 3 0 CY24292ZXI 4820920 610849226 MB COMP 3 0 CY24293ZXI 4820920 610848451 RA COMP 3 0 611212494 CML-RA COMP 5 0 STRESS: ESD-MACHINE MODEL, 200V CY24293ZXI 4134252 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 11 Document No. 001-82813 Rev. ** ECN #: 3742756 Document History Page Document Title: Document Number: QTP 082506: PCI-E CLOCK FAMILY, R52T-3 TECHNOLOGY, FAB 4 001-82813 Rev. ECN Orig. of No. Change ** 3742756 NSR Description of Change Initial Spec Release. The previous version of this qual report is posted in memo ZIJ-67. Changes to ZIJ-67: - Update Version 1.0 to 2.0 in the Title page. - Re-arrange the Title in the front page. - Change product Division from DCD to MPD - Removed the reference Cypress specs in the reliability tests performed table and replaced with industry standards. - Added ESD Machine Model (MM) data. Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 11