QTP 134904.pdf

Document No. 001-92809 Rev. **
ECN #: 4400627
Cypress Semiconductor
Product Qualification Report
QTP# 134904 VERSION **
JUNE 2014
PSoC4A Device Family
S8PF-10R, Fab8F UMC
CY8C4124
CY8C4125
CY8C4244
CY8C4245
PROGRAMMABLE SYSTEM-ONCHIP (PSOC)
PROGRAMMABLE SYSTEM-ONCHIP (PSOC)
FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT
[email protected] or via a CYLINK CRM CASE
Prepared By:
Honesto Sintos
Reliability Engineer
Reviewed By:
Zhaomin Ji
Reliability Manager
Approved By:
Richard Oshiro
Reliability Director
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 1 of 14
Document No. 001-92809 Rev. **
ECN #: 4400627
PACKAGE/PRODUCT QUALIFICATION HISTORY
QTP
Number
114909
124203
134904
Description of Qualification Purpose
Qualification of S8P12-10R Technology in UMC Fab Using Gen4
(8C20400DI) Device
Qualification of Gen4 device design mask changes using S8P12-10R
Technology in UMC Fab
Qualification of PSoC4A Device 8C44200, S8PF-10R Technology in UMC
(Fab8F)
Date
May 2013
May 2013
June 2014
Company Confidential
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Page 2 of 14
Document No. 001-92809 Rev. **
ECN #: 4400627
PRODUCT DESCRIPTION (for qualification)
Qualification Purpose: Qualification of PSoC4A Device 8C44200, S8PF-10R Technology in UMC (Fab8F)
Marketing Part #:
CY8C4124, CY8C4125, CY8C4244, CY8C4245
Device Description:
1.8V core, Commercial/Industrial Programmable System on a Chip
Cypress Division:
Cypress Semiconductor Corporation – Programmable Systems Division (PSD)
TECHNOLOGY/FAB PROCESS DESCRIPTION
Number of Metal Layers:
5
Metal Composition:
Passivation Type and Thickness:
Metal 1: 50A Ti/200A TiN / 3200Al-0.5%Cu/ 50A Ti/300A TiN
Metal 2: 50A Ti/200A TiN / 3200Al-0.5%Cu/ 50A Ti/300A TiN
Metal 3: 50A Ti/200A TiN / 6500Al-0.5%Cu/ 50A Ti/500A TiN
Metal 4: 50A Ti/200A TiN / 6500Al-0.5%Cu/ 50A Ti/500A TiN
Metal 5: 50A Ti/200A TiN / 12000Al-0.5%Cu / 50A Ti/500A TiN
NFUSOX / Nitride
Generic Process Technology/Design Rule (µ-drawn): S8PF-10R
Gate Oxide Material/Thickness (MOS):
32A/ 120A
Name/Location of Die Fab (prime) Facility:
UMC, Fab 8F
Die Fab Line ID/Wafer Process ID:
UMC/ S8PF-10R
ALTERNATIVE FAB FACILITY SITE
FAB SITE
LOCATION
QTP NUMBER
CMI Fab 4
MN, USA
123502
Company Confidential
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Page 3 of 14
Document No. 001-92809 Rev. **
ECN #: 4400627
PACKAGE AVAILABILITY
PACKAGE
WIRE MATERIAL
ASSEMBLY FACILITY SITE
QTP NUMBER
44-Lead TQFP
Cu
ASE-G
123808
44-Lead TQFP
CuPd
CML-RA
133102
40-Lead QFN
Cu
ASE-G
130902
40-Lead QFN
Cu
CML-RA
123807
40-Lead QFN
CuPd
ASE-G
134515
40-Lead QFN
CuPd
CML-RA
141702
28-Lead SSOP
CuPd
JCET-JT
133002
28-Lead SSOP
CuPd
CML-RA
131804
Note: Package Qualification details upon request.
Company Confidential
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Page 4 of 14
Document No. 001-92809 Rev. **
ECN #: 4400627
MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION
Package Designation:
Package Outline, Type, or Name:
AZ44A
Mold Compound Name/Manufacturer:
TQFP 44L (10x10x1.4mm)
KE-G3000 / Kyocera Chemicals
Mold Compound Flammability Rating:
UL-94: V-0 @ 0.8-3.2mm
Oxygen Rating Index:
65%
Lead Frame Material:
Copper
Lead Finish, Composition / Thickness:
NiPdAu
Die Backside Preparation
Method/Metallization:
Backgrind
Die Separation Method:
100% Saw Thru
Die Attach Supplier:
Henkel / Hysol
Die Attach Material:
QMI509
Bond Diagram Designation:
001-87485
Wire Bond Method:
Thermosonic
Wire Material/Size:
CuPd / 0.8 mil
Thermal Resistance Theta JA °C/W:
62.95 °C/W
Package Cross Section Yes/No:
N/A
Assembly Process Flow:
001−82703
Name/Location of Assembly (prime) facility:
CML-RA
MSL Level
3
Reflow Profile
260C
ELECTRICAL TEST / FINISH DESCRIPTION
Test Location:
ASE, Taiwan (G), CML-RA, JCET-JT
Note: Please contact a Cypress Representative for other package availability.
Company Confidential
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Page 5 of 14
Document No. 001-92809 Rev. **
ECN #: 4400627
RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS
Stress/Test
Test Condition (Temp/Bias)
Result
P/F
P
High Temperature Operating Life
Dynamic Operating Condition, 150°C, 2.07V, 48 Hours
Early Failure Rate (EFR)
JESD22-A-108-B
High Temperature Operating Life
Dynamic Operating Condition, 150°C, 2.07V, 500 Hours
Latent Failure Rate (LFR)
JESD22-A-108-B
High Temperature Steady State life
150°C, 6.0V, Vcc Max
P
Low Temperature Operating Life
-30°C, 2.07V
P
Endurance
JESD22-A117
P
Data Retention
JESD22-A117 and JESD22-A103, 150°C, 1000 Hours
Temperature Cycle
-650C to 1500C, JESD22-A-104, 500 Cycles
Precondition: JESD22 Moisture Sensitivity Level 3
P
P
P
192 Hrs, 30C/60%RH+Reflow, 260°°C+0, -5°C
Thermal Shock
JEDEC22, Condition B, -55°C to 125°C
High Accelerated Saturation Test
130°C, 5.5V, 85%RH, JESD22-A-110-B, 128 Hours
Precondition: JESD22 Moisture Sensitivity Level 3
(HAST)
P
P
192 Hrs, 30C/60%RH+Reflow, 260°°C+0, -5°C
Pressure Cooker
121°C/100%RH, JESD22-A102-C, 168 Hours
Precondition: JESD22 Moisture Sensitivity Level 3
P
192 Hrs, 30C/60%RH+Reflow, 260°°C+0, -5°C
Aged Bond Strength
200C, 4hrs
MIL-STD-883, Method 883-2011
P
Electrostatic Discharge
Human Body Model (ESD-HBM)
2200V/ 3300V, JESD22-A114
P
Electrostatic Discharge
Charge Device Model (ESD-CDM)
500V/ 1000V/ 1250V, JESD22-C101
P
Static Latch-up
± 140mA, 125°C/85°C, 2.93V/8.25V, JESD78
P
± 200mA, 85C, 9.1V/3.12V, JESD78
Acoustic (M3)
J-STD-020
Company Confidential
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Page 6 of 14
P
Document No. 001-92809 Rev. **
ECN #: 4400627
RELIABILITY FAILURE RATE SUMMARY
Stress/Test
High Temperature Operating Life
1
Early Failure Rate
1, 2
High Temperature Operating Life
Long Term Failure Rate*
1
2
3
Failure Rate
Device Tested/
Device Hours
#
Fails
Activation
Energy
Thermal
AF3
1,524 Devices
0
N/A
N/A
0 PPM
1
276,660 DHRs
0
0.7
170
19 FIT
2
Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C.
Chi-squared 60% estimations used to calculate the failure rate.
Thermal Acceleration Factor is calculated from the Arrhenius equation
E  1 1  
AF = exp  A  -  
 k  T 2 T1  
where:
EA =The Activation Energy of the defect mechanism.
-5
K = Boltzmann’s constant = 8.62x10 eV/Kelvin.
T1 is the junction temperature of the device under stress and T2 is the junction temperature of the
device at use conditions.
1
2
Early Failure Rate was computed from QTPs 134904
Long Term Failure Rate was computed from QTPs 114909, 124203, & 134904 LFR Data.
Company Confidential
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Page 7 of 14
Document No. 001-92809 Rev. **
ECN #: 4400627
Reliability Test Data
QTP #: 114909
Device
Fab Lot #
Assy Lot #
Assy Loc Duration Samp
Rej
Failure Mechanism
STRESS: ACOUSTIC, MSL3
CY8CTMA443 (8C20401DI) 8229006
611228883
CML-RA
COMP
15
0
CY8CTMA443 (8C20401DI) 8234005
611232480
CML-RA
COMP
15
0
CY8CTMA443 (8C20401DI) 8241011
611239654
CML-RA
COMP
15
0
CY8CTMA443 (8C20401DI) 8229006
611228883
CML-RA
COMP
5
0
CY8CTMA443 (8C20401DI) 8234005
611232480
CML-RA
COMP
5
0
CML-RA
COMP
5
0
STRESS: AGE BOND STRENGTH
STRESS: CONSTRUCTIONAL ANALYSIS
CY8CTMA443 (8C20401DI) 8229006
611228883
STRESS: DATA RETENTION, PLASTIC, 150C
CY8CTMA443 (8C20401DI) 8229006
611228883
CML-RA
500
80
0
CY8CTMA443 (8C20401DI) 8229006
611228883
CML-RA
1000
80
0
CY8CTMA443 (8C20401DI) 8229006
611228883
CML-RA
1500
80
0
CY8CTMA443 (8C20401DI) 8234005
611232480
CML-RA
500
80
0
CY8CTMA443 (8C20401DI) 8234005
611232480
CML-RA
1000
80
0
CY8CTMA443 (8C20401DI) 8234005
611232480
CML-RA
1500
80
0
CY8CTMA443 (8C20401DI) 8241011
611239654
CML-RA
500
80
0
CY8CTMA443 (8C20401DI) 8241011
611239654
CML-RA
1000
80
0
CY8CTMA443 (8C20401DI) 8229006
611228883
CML-RA
168
80
0
CY8CTMA443 (8C20401DI) 8234005
611232480
CML-RA
168
80
0
CY8CTMA443 (8C20401DI) 8234005
611232480
CML-RA
500
80
0
CY8CTMA443 (8C20401DI) 8241011
611239654
CML-RA
168
80
0
STRESS: ENDURANCE
STRESS:
ESD-CHARGE DEVICE MODEL, (500V)
CY8CTMA443 (8C20401DI) 8229006
611228883
CML-RA
COMP
9
0
CY8CTMA443 (8C20401DI) 8234005
611232480
CML-RA
COMP
9
0
611228883
CML-RA
COMP
1
0
STRESS:
SEM CROSS SECTION
CY8CTMA443 (8C20401DI) 8229006
Company Confidential
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Page 8 of 14
Document No. 001-92809 Rev. **
ECN #: 4400627
Reliability Test Data
QTP #: 114909
Device
Fab Lot #
Assy Lot #
Assy Loc Duration Samp
Rej
Failure Mechanism
STRESS: STATIC LATCH-UP (85C, 2.93V/8.25V)
CY8CTMA443 (8C20401DI) 8229006
611228883
CML-RA
COMP
6
0
CY8CTMA443 (8C20401DI) 8234005
611232480
CML-RA
COMP
6
0
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V)
CY8CTMA443 (8C20401DI) 8229006
611228883
CML-RA
COMP
8
0
CY8CTMA443 (8C20401DI) 8234005
611232480
CML-RA
COMP
8
0
CML-RA
COMP
3
0
STRESS: DYNAMIC LATCH-UP (125C, 5V-8V)
CY8CTMA443 (8C20401DI) 8229006
611228883
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150, 2.07V, Vcc Max)
CY8CTMA443 (8C20401DI) 8240000
611300363
CML-RA
48
1083
0
CY8CTMA443 (8C20401DI) 9303001
611303626N
CML-RA
48
999
1
CY8CTMA443 (8C20401DI) 9305012
611304910
CML-RA
48
1000
0
MM4 deformation
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 2.07V, Vcc Max)
CY8CTMA443 (8C20401DI) 8234005
611232480
CML-RA
80
116
0
CY8CTMA443 (8C20401DI) 8234005
611232480
CML-RA
500
116
0
CY8CTMA443 (8C20401DI) 8234006
611234499
CML-RA
80
129
0
CY8CTMA443 (8C20401DI) 8234006
611234499
CML-RA
500
129
0
CY8CTMA443 (8C20401DI) 8240000
611300363
CML-RA
80
116
0
CY8CTMA443 (8C20401DI) 8240000
611300363
CML-RA
500
116
0
STRESS: HIGH TEMP STEADY STATE LIFE TEST (150C, 6.0V)
CY8CTMA443 (8C20401DI) 8229006
611228883
CML-RA
168
76
0
CY8CTMA443 (8C20401DI) 8234005
611232480
CML-RA
168
76
0
CY8CTMA443 (8C20401DI) 8241011
611239654
CML-RA
168
80
0
77
0
STRESS: LOW TEMPERATURE DYNAMIC OPERATING LIFE, -30C, 2.07V
CY8CTMA443 (8C20401DI) 8229006
611228883
CML-RA
500
Company Confidential
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Page 9 of 14
Document No. 001-92809 Rev. **
ECN #: 4400627
Reliability Test Data
QTP #: 114909
Device
Fab Lot #
Assy Lot #
Assy Loc Duration Samp
Rej
Failure Mechanism
STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 5.5V), PRE COND 192 HR 30C/60%RH (MSL3)
CY8CTMA443 (8C20401DI) 8229006
611228883
CML-RA
128
79
0
CY8CTMA443 (8C20401DI) 8229006
611228883
CML-RA
256
79
0
CY8CTMA443 (8C20401DI) 8234005
611232480
CML-RA
128
80
0
CY8CTMA443 (8C20401DI) 8234005
611232480
CML-RA
256
80
0
CY8CTMA443 (8C20401DI) 8241011
611239654
CML-RA
128
80
0
CY8CTMA443 (8C20401DI) 8241011
611239654
CML-RA
256
80
0
STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 192 HR 30C/60%RH (MSL3)
CY8CTMA443 (8C20401DI) 8229006
611228883
CML-RA
168
80
0
CY8CTMA443 (8C20401DI) 8229006
611228883
CML-RA
288
80
0
CY8CTMA443 (8C20401DI) 8234005
611232480
CML-RA
168
80
0
CY8CTMA443 (8C20401DI) 8234005
611232480
CML-RA
288
80
0
CY8CTMA443 (8C20401DI) 8241011
611239654
CML-RA
168
80
0
CY8CTMA443 (8C20401DI) 8241011
611239654
CML-RA
288
80
0
STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH (MSL3)
CY8CTMA443 (8C20401DI) 8229006
611228883
CML-RA
500
80
0
CY8CTMA443 (8C20401DI) 8229006
611228883
CML-RA
1000
80
0
CY8CTMA443 (8C20401DI) 8234005
611232480
CML-RA
500
80
0
CY8CTMA443 (8C20401DI) 8234005
611232480
CML-RA
1000
80
0
CY8CTMA443 (8C20401DI) 8241011
611239654
CML-RA
500
80
0
CY8CTMA443 (8C20401DI) 8241011
611239654
CML-RA
1000
80
0
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 10 of 14
Document No. 001-92809 Rev. **
ECN #: 4400627
Reliability Test Data
QTP #: 124203
Device
STRESS:
Fab Lot #
Assy Lot #
Assy Loc Duration Samp
Rej
Failure Mechanism
ESD-CHARGE DEVICE MODEL, (500V)
CY8CTMA443 (8C20401DI) 8241011
611239653
CML-RA
COMP
9
0
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V)
CY8CTMA443 (8C20401DI) 8241011
611239653
CML-RA
COMP
8
0
CML-RA
COMP
6
0
STRESS: STATIC LATCH-UP (85C, 2.93V/8.25V)
CY8CTMA443 (8C20401DI) 8241011
611239653
Company Confidential
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Page 11 of 14
Document No. 001-92809 Rev. **
ECN #: 4400627
Reliability Test Data
QTP #: 134904
Device
STRESS:
Fab Lot #
Assy Loc Duration Samp
Rej
611409200
CML-RA
COMP
15
0
DATA RETENTION, PLASTIC, 150C
CY8C4245AXI8 (8CP44200CI) 8241011
611409200
CML-RA
500
76
0
CY8C4245AXI8 (8CP44200CI) 8241011
611409200
CML-RA
1000
76
0
CML-RA
COMP
9
0
CML-RA
COMP
3
0
CML-RA
COMP
3
0
8
0
3
0
STRESS:
ESD-CHARGE DEVICE MODEL, (500V)
CY8C4245AXI8 (8CP44200CI) 8241011
STRESS:
611409200
ESD-CHARGE DEVICE MODEL, (1000V)
CY8C4245AXI8 (8CP44200CI) 8241011
STRESS:
Failure Mechanism
ACOUSTIC, MSL3
CY8C4245AXI8 (8CP44200CI) 8241011
STRESS:
Assy Lot #
611409200
ESD-CHARGE DEVICE MODEL, (1250V)
CY8C4245AXI8 (8CP44200CI) 8241011
611409200
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V)
CY8C4245AXI8 (8CP44200CI) 8241011
611409200
CML-RA
COMP
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (3,300V)
CY8C4245AXI8 (8CP44200CI) 8241011
611409200
CML-RA
COMP
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150, 2.07V, Vcc Max)
CY8C4245AXI8 (8CP44200CI) 8241011
611409200
CML-RA
48
1524
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150, 2.07V, Vcc Max)
CY8C4245AXI8 (8CP44200CI) 8241011
611409200
CML-RA
80
116
0
CY8C4245AXI8 (8CP44200CI) 8241011
611409200
CML-RA
500
116
0
STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 192 HR 30C/60%RH (MSL3)
CY8C4245AXI8 (8CP44200CI) 8241011
611409200
CML-RA
168
77
0
CY8C4245AXI8 (8CP44200CI) 8241011
611409200
CML-RA
288
77
0
CML-RA
COMP
6
0
CML-RA
COMP
3
0
CML-RA
COMP
3
0
STRESS: STATIC LATCH-UP (+/-140mA 85C)
CY8C4245AXI8 (8CP44200CI) 8241011
611409200
STRESS: STATIC LATCH-UP (+/-200mA 85C)
CY8C4245AXI8 (8CP44200CI) 8241011
611409200
STRESS: STATIC LATCH-UP (+/-140mA 125C)
CY8C4245AXI8 (8CP44200CI) 8241011
611409200
Company Confidential
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Page 12 of 14
Document No. 001-92809 Rev. **
ECN #: 4400627
Reliability Test Data
QTP #: 134904
Device
Fab Lot #
Assy Lot #
Assy Loc Duration Samp
Rej
Failure Mechanism
STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH (MSL3)
CY8C4245AXI8 (8CP44200CI) 8241011
611409200
CML-RA
500
77
0
CY8C4245AXI8 (8CP44200CI) 8241011
611409200
CML-RA
1000
77
0
Company Confidential
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Page 13 of 14
Document No. 001-92809 Rev. **
ECN #: 4400627
Document History Page
Document Title:
Document Number:
QTP#134904: PSOC4A DEVICE FAMILY S8PF-10R, FAB8F UMC
001-92809
Rev. ECN
Orig. of
No.
Change
**
4400627 HSTO
Distribution: WEB
Posting:
Description of Change
Initial Spec Release
None
Company Confidential
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Page 14 of 14
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