QTP 140703:QUALIFICATION OF CY8C4013/ CY8C4014 PSOC4 DEVICE FAMILY, S8PF-10P TECHNOLOGY IN CMI FAB4

Document No. 001-91144 Rev. *B
ECN #: 4624766
Cypress Semiconductor
Product Qualification Report
QTP # 140703 VERSION*B
January 2014
PSoC®4 Family
S8PF-10P Technology, Fab 4 CMI
CY8C4013
CY8C4014
Programmable System-on-Chip (PSoC)
FOR ANY QUESTIONS ON THIS REPORT, PLEAE CONTACT
[email protected] or via a CYLINK CRM CASE
Prepared By:
Honesto Sintos
Reliability Engineer
Reviewed By:
Zhaomin Ji
Reliability Manager
Approved By:
Richard Oshiro
Reliability Director
Company Confidential
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Page 1 of 19
Document No. 001-91144 Rev. *B
ECN #: 4624766
PRODUCT QUALIFICATION HISTORY
QTP
Number
083401
113905
123502
140703
Description of Qualification Purpose
Qualify SONOS S8DI-5R Technology in Fab 4 using PsoC 8C20066BC Krypton
Device
Qualify device 8C20400BC S8P12-10P Technology Fabricated at Fab4 (CMI)
Qualification of PSoC4A Device 8C44200AC, S8PF-10P Technology in CMI
(Fab 4)
Qualification of CY8C4013/ CY8C4014 PSoC4 Family, S8PF-10P Technology in
CMI (Fab 4)
Company Confidential
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Page 2 of 19
Date
Comp
Jan 09
Jan 12
Apr 13
Feb 14
Document No. 001-91144 Rev. *B
ECN #: 4624766
PRODUCT DESCRIPTION (for qualification)
Qualification Purpose: To qualify CY8CMBR3 CapSense Controller device family, S8PF-10P Technology in CMI (Fab 4)
Marketing Part #:
CY8C4013, CY8C4014
Device Description:
1.8V core, Commercial/ Industrial Programmable System on a Chip
Cypress Division:
Cypress Semiconductor – Programmable Systems Division
TECHNOLOGY/FAB PROCESS DESCRIPTION
Number of Metal Layers:
5
Metal Composition:
Passivation Type and Thickness:
Metal 1: 100A Ti / 3200A Al-0.5%Cu / 300A TiW
Metal 2: 100A Ti / 3200A Al-0.5% Cu/ 350A TiW
Metal 3: 150A Ti / 7200A Al-0.5%Cu / 350A TiW
Metal 4: 150A Ti / 7200A Al-0.5%Cu / 350A TiW
Metal 5: 300A Ti / 12000A Al-0.5%Cu / 300A TiW
1000A NFUSOX / 6000A Nitride
Generic Process Technology/Design Rule (-drawn): S8 / 0.13um
SiO2 / 32A & SiO2 / 120A
Gate Oxide Material/Thickness (MOS):
Name/Location of Die Fab (prime) Facility:
Fab 4, CMI-Minnesota
Die Fab Line ID/Wafer Process ID:
S8PF-10P
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Page 3 of 19
Document No. 001-91144 Rev. *B
ECN #: 4624766
MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION
Package Designation:
Package Outline, Type, or Name:
Mold Compound Name/Manufacturer:
Mold Compound Flammability Rating:
Oxygen Rating Index:
Lead Frame Material:
Lead Finish, Composition / Thickness:
Die Backside Preparation
Method/Metallization:
Die Separation Method:
Die Attach Material:
Die Attach Method:
Wire Bond Method:
CML Autoline (RA)
QFN16 (LQ16A)
CML Autoline (RA) – Nitto 7470 , CEL9220
UL94 – V0
None
CML Autoline (RA) – Copper
CML Autoline – NiPdAu
Backgrind
Wire Material/Size:
100% Saw
CML Autoline (RA) – Dexter QMI519
CML Autoline (RA) – Epoxy
Thermosonic
0.8mil CuPd
Name/Location of Assembly (prime) facility:
MSL Level
Reflow Profile
CML-RA
3
260C
MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION
Package Designation:
Package Outline, Type, or Name:
Mold Compound Name/Manufacturer:
Mold Compound Flammability Rating:
Oxygen Rating Index:
Lead Frame Material:
Lead Finish, Composition / Thickness:
Die Backside Preparation
Method/Metallization:
Die Separation Method:
Die Attach Material:
Die Attach Method:
Wire Bond Method:
ASE-KH (G)
QFN16 (LQ16A)
ASE-KH (G) – G700
UL94 – V0
None
ASE-KH (G) – Copper
ASE-KH – Pure Sn
Backgrind
Wire Material/Size:
100% Saw
ASE-KH (G) – FH900
ASE-KH (G) - Film
Thermosonic
0.8mil CuPd
Name/Location of Assembly (prime) facility:
MSL Level
Reflow Profile
ASE-KH
3
260C
ELECTRICAL TEST / FINISH DESCRIPTION
Test Location:
CML-RA, ASE-KH
Company Confidential
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Page 4 of 19
Document No. 001-91144 Rev. *B
ECN #: 4624766
PACKAGE AVAILABILITY
PACKAGE
ASSEMBLY FACILITY SITE
WIRE
QTP NUMBER
16-Lead QFN
CML-RA
CuPd
140804
16-Lead QFN
ASE-K
CuPd
134505
16/24 -Lead QFN
UTL-UT
CuPd
141704
8-Lead SOIC
UTL-UT
CuPd
134513
16-Lead SOIC
UTL-UT
CuPd
134506
28-Lead SSOP
CML-RA
CuPd
145006
28-Lead SSOP
JCET-JT
CuPd
145005
Note: Please contact a Cypress Representative for other package availability
Company Confidential
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Page 5 of 19
Document No. 001-91144 Rev. *B
ECN #: 4624766
RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS
Stress/Test
High Temperature Operating Life Early
Failure Rate
High Temperature Operating Life Latent
Failure Rate
High Temperature Steady State life
Low Temperature Operating Life
Low Temperature Storage Life
High Accelerated Saturation Test (HAST)
Temperature Cycle
Pressure Cooker
Test Condition (Temp/Bias)
Dynamic Operating Condition, Vcc Max=2.1V/2.07V, 150°C
JESD22-A-108
Dynamic Operating Condition, Vcc Max=2.1V/2.07, 150°C
JESD22-A-108
150°C, 2.1V, Vcc Max
JESD22-A-108
-30°C, 2.1V
JESD22-A-108
-40°C, No Bias
130°C, 5.25V, 85%RH, JESD22-A-110
Precondition: JESD22 Moisture Sensitivity Level 3
192 Hrs, 30C/60%RH+Reflow, 260°C+0, -5°C
-650C to 1500C, JESD22-A-104
Precondition: JESD22 Moisture Sensitivity Level 3
192 Hrs, 30C/60%RH+Reflow, 260°C+0, -5°C
121°C, 100%RH, 15 Psig, JESD22-A102
Precondition: JESD22 Moisture Sensitivity Level 3
192 Hrs, 30C/60%RH+Reflow, 260°C+0, -5°C
Result
P/F
P
P
P
P
P
P
P
P
Acoustic Microscopy
J-STD-020
P
Age Bond Strength
200C, 4hrs
MIL-STD-883, Method 883-2011
P
Ball Shear
JESD22-B116
P
Constructional Analysis
Criteria: Meet external and internal characteristics of
Cypress package
P
Current Density
Meets the Technology Device Level Reliability Specifications
P
Data Retention
150°C, No Bias
JESD22-A117 and JESD22-A103
P
Electrostatic Discharge
Human Body Model (ESD-HBM)
2,200V/3,300V/5000V/6000V/7,000V/8,000V
JESD22, Method A114
P
Electrostatic Discharge
Charge Device Model (ESD-CDM)
500V/1,000V/1,250V/1,500V/1,750V
JESD22-C101
P
Endurance Test
MIL-STD-883, Method 883-1033/ JESD22-A117
P
Static Latch-up
125C, +/- 140mA, 85C,+/-180mA, 85C,+/-300mA
JESD 78
P
SEM Analysis
MIL-STD-883, Method 2018
P
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Page 6 of 19
Document No. 001-91144 Rev. *B
ECN #: 4624766
RELIABILITY FAILURE RATE SUMMARY
Stress/Test
1.
2.
Device Tested/
Device Hours
#
Fails
Activation
Energy
Thermal
AF3
Failure Rate
High Temperature Operating Life
Early Failure Rate
3,025 Devices
1
N/A
N/A
330 PPM
High Temperature Operating Life
Long Term Failure Rate
778,000 DHRs
0
0.7
170
7 FIT
1
2
EFR devices number is based on QTP#132802 EFR data only
LFR device hours is based on QTP#083401, QTP#113905, QTP#123502 and QTP132802 LFR data.
3
2
3
Assuming an ambient temperature of 55C and a junction temperature rise of 15C.
Chi-squared 60% estimations used to calculate the failure rate.
Thermal Acceleration Factor is calculated from the Arrhenius equation
E  1 1  
AF = exp  A  -  
 k  T2 T1  
where:
EA =The Activation Energy of the defect mechanism.
-5
K = Boltzmann’s constant = 8.62x10 eV/Kelvin.
T1 is the junction temperature of the device under stress and T2 is the junction temperature of the
device at use conditions.
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Page 7 of 19
Document No. 001-91144 Rev. *B
ECN #: 4624766
Reliability Test Data
QTP #: 083401
Device
Fab Lot #
Assy Lot #
Assy Loc Duration
Samp
Rej
Failure Mechanism
STRESS: ACOUSTIC, MSL3
CY8C20466 (8C20466AC)
4810486
610828990
Malaysia-CA COMP
15
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA COMP
15
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA COMP
15
0
STRESS: AGE BOND STRENGTH
CY8C20566 (8C20566AC)
4827949
610844164
CML-R
COMP
3
0
CY8C20466 (8C20466AC)
4804681
610822808
Malaysia-CA COMP
3
0
CY8C20666 (8C20666AC)
4836589
610852813
Malaysia-CA COMP
3
0
STRESS: DATA RETENTION, PLASTIC, 150C
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
500
77
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
1000
77
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA
500
78
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA
1000
78
0
CY8C20566 (8C20566AC)
4836589
610851914
CML-R
500
78
0
CY8C20566 (8C20566AC)
4836589
610851914
CML-R
1000
78
0
CY8C20566 (8C20566AC)
4810486
610830786
CML-R
168
77
0
CY8C20566 (8C20566AC)
4815537
610835437
CML-R
168
77
0
CY8C20566 (8C20566AC)
4827949
610844164
CML-R
168
79
0
CY8C20566 (8C20566AC)
4835945
610848270
CML-R
168
78
0
CY8C20566 (8C20566AC)
4836589
610851914
CML-R
168
76
0
STRESS: ENDURANCE
STRESS:
ESD-CHARGE DEVICE MODEL, (500V)
CY8C20566 (8C20566AC)
4810486
610830371
CML-R
500
9
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
500
9
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA
500
9
0
N/A
N/A
COMP
1
0
STRESS:
SEM CROSS SECTION
CY8C20066 (8C20066AC)
4810486
STRESS: STATIC LATCH-UP (85C, 8.25V)
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA COMP
6
0
CY8C20666 (8C20666AC)
4836589
610852813
Malaysia-CA COMP
6
0
CY8C20666 (8C20666AC)
4837410
410.23.02
Promex
6
0
COMP
Company Confidential
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Page 8 of 19
Document No. 001-91144 Rev. *B
ECN #: 4624766
Reliability Test Data
QTP #: 083401
Device
Fab Lot # Assy Lot #
Assy Loc
Duration
Samp
Rej
Failure Mechanism
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V)
CY8C20566 (8C20566AC)
4810486
610830371
CML-R
2200
8
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
2200
8
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA
2200
8
0
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (3,300V)
CY8C20566 (8C20566AC)
4810486
610830371
CML-R
3300
3
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
3300
3
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA
3300
3
0
STRESS: ESD-MACHINE MODEL, (200V)
CY8C20236A (8C202662A) 4126494
611143319
KOREA-L
200
5
0
CY8C20236A (8C202662A) 4125077
611143627
PHIL-MB
200
5
0
STRESS: ESD-MACHINE MODEL, (220V)
CY8C20566 (8C20566AC)
4810486
610830371
CML-R
220
6
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
220
6
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA
220
6
0
STRESS: ESD-MACHINE MODEL, (275V)
CY8C20566 (8C20566AC)
4810486
610830371
CML-R
275
3
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
275
3
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA
275
3
0
STRESS: ESD-MACHINE MODEL, (330V)
CY8C20566 (8C20566AC)
4810486
610830371
CML-R
330
3
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
330
3
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA
330
3
0
STRESS: DYNAMIC LATCH-UP (125C, 8.5V)
CY8C20466 (8C20466AC)
4810486
610828990
Malaysia-CA COMP
5
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA COMP
5
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA COMP
5
0
Company Confidential
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Page 9 of 19
Document No. 001-91144 Rev. *B
ECN #: 4624766
Reliability Test Data
QTP #: 083401
Device
Fab Lot # Assy Lot #
Assy Loc
Duration
Samp
Rej
Failure Mechanism
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150, 2.1V, Vcc Max)
CY8C20566 (8C20566AC)
4827949
610844164
CML-R
48
1002
0
CY8C20566 (8C20566AC)
4815537
610835437
CML-R
48
1008
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA
48
1004
1
CY8C20466 (8C20466AC)
4836589
610851747
Malaysia-CA
48
1004
0
STRESS:
Read NV Latch (1)
HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE REGULATOR ON (150, 5V, Vcc Max)
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
48
45
0
CY8C20566 (8C20566AC)
4835945
610848270
CML-R
48
45
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE REGULATOR ON (125C, 5V, Vcc Max)
CY8C20466 (8C20466AC)
4810486
610828990
Malaysia-CA
96
45
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 2.1V, Vcc Max)
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
80
390
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
500
390
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA
80
390
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA
500
390
0
CY8C20466 (8C20466AC)
4836589
610851747
Malaysia-CA
80
390
0
CY8C20466 (8C20466AC)
4836589
610851747
Malaysia-CA
500
390
0
STRESS: HIGH TEMP STEADY STATE LIFE TEST (150C, 2.1V)
CY8C20466 (8C20466AC)
4810486
610828990
Malaysia-CA
80
77
0
CY8C20466 (8C20466AC)
4810486
610828990
Malaysia-CA
168
77
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
80
77
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
168
77
0
CY8C20566 (8C20566AC)
4835945
610848270
CML-R
80
77
0
CY8C20566 (8C20566AC)
4835945
610848270
CML-R
168
77
0
STRESS: LOW TEMPERATURE DYNAMIC OPERATING LIFE, -30C, 2.1V
CY8C20566 (8C20566AC)
4815537
610835437
CML-R
500
77
0
CY8C20566 (8C20566AC)
4835945
610848270
CML-R
500
77
0
(1)
Destroyed during failure analysis
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Page 10 of 19
Document No. 001-91144 Rev. *B
ECN #: 4624766
Reliability Test Data
QTP #: 083401
Device
Fab Lot # Assy Lot #
Assy Lot
Duration
Samp
Rej
Failure Mechanism
STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 5.25V), PRE COND 192 HR 30C/60%RH (MSL3)
CY8C20466 (8C20466AC)
4810486
610828990
Malaysia-CA
128
77
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
128
77
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
256
77
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA
128
77
0
STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 192 HR 30C/60%RH (MSL3)
CY8C20466 (8C20466AC)
4810486
610828990
Malaysia-CA
168
77
0
CY8C20466 (8C20466AC)
4810486
610828990
Malaysia-CA
333
77
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
168
77
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
288
77
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA
168
77
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA
288
77
0
STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH (MSL3)
CY8C20466 (8C20466AC)
4810486
610828990
Malaysia-CA
500
77
0
CY8C20466 (8C20466AC)
4810486
610828990
Malaysia-CA
1000
77
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
500
77
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
1000
77
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA
500
77
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA
1000
77
0
Reliability Test Data
ER114031
Device
Fab Lot # Assy Lot #
Assy Lot
Duration
Samp
Rej
Failure Mechanism
STRESS: LOW TEMPERATURE STORAGE, -40C, No Bias
CY8C20236A (8C202662A) 4137730
611155459
L-KOREA
1000
100
0
Company Confidential
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Page 11 of 19
Document No. 001-91144 Rev. *B
ECN #: 4624766
Reliability Test Data
QTP #: 113905
Device
Fab Lot #
Assy Lot #
Assy Loc
Duration
Samp
Rej
Failure Mechanism
STRESS: ACOUSTIC, MSL3
CY8CTMA443 (8C20401B)
4140358
611153802
CML-RA
COMP
15
0
CY8CTMA443 (8C20401A)
4130520
611147744
G-TAIWAN
COMP
15
0
CY8CTMA443 (8C20401A)
4129433
611148871
G-TAIWAN
COMP
15
0
CY8CTMA443 (8C20401A)
4131142
611148867
G-TAIWAN
COMP
15
0
CY8CTMA443 (8C20401A)
4130520
611147744
G-TAIWAN
COMP
10
0
CY8CTMA443 (8C20401A)
4129433
611148871
G-TAIWAN
COMP
10
0
CY8CTMA443 (8C20401A)
4131142
611148867
G-TAIWAN
COMP
10
0
STRESS: BOND PULL
STRESS: DATA RETENTION, 150C
CY8CTMA443 (8C20401A)
4130520
611147744
G-TAIWAN
500
80
0
CY8CTMA443 (8C20401A)
4130520
611147744
G-TAIWAN
1000
80
0
4130520
611147744
G-TAIWAN
COMP
15
0
4130520
611147744
G-TAIWAN
168
80
0
CML-RA
COMP
9
0
3
0
8
0
STRESS: DYE PENETRANT TEST
CY8CTMA443 (8C20401A)
STRESS : ENDURANCE
CY8CTMA443 (8C20401A)
STRESS: ESD-CHARGE DEVICE MODEL, (500V)
CY8CTMA443 (8C20401B)
4140358
611153802
STRESS: ESD-HUMAN BODY MODEL PER JESD22, METHOD A114-B, (1100V)
CY8CTMA443 (8C20401B)
4140358
611153802
CML-RA
COMP
STRESS: ESD-HUMAN BODY MODEL PER JESD22, METHOD A114-B, (1600V)
CY8CTMA443 (8C20401B)
4140358
611153801
CML-RA
COMP
STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 5.5V), PRE COND 192 HR 30C/60%RH (MSL3)
CY8CTMA443 (8C20401A)
4130520
611147744
G-TAIWAN
128
80
0
CY8CTMA443 (8C20401A)
4129433
611148871
G-TAIWAN
128
78
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE REG-ON (150C, 6.0V, Vcc Max)
CY8CTMA443 (8C20401A)
4130520
611147745
G-TAIWAN
48
45
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150C, 2.07V, Vcc Max)
CY8CTMA443 (8C20401B)
4140358
611153802
CML-RA
48
1492
0
CY8CTMA443 (8C20401B)
4140358
611153800
CML-RA
48
1074
2
ISB Deep Sleep, CAR#201201012
CY8CTMA443 (8C20401B)
4140358
611153800
CML-RA
48
418
1
ISB Deep Sleep, CAR#201201012
CY8CTMA443 (8C20401B)
4141585
611156224
G-TAIWAN
48
1500
0
CY8CTMA443 (8C20401A)
4129433
611148871
G-TAIWAN
48
1000
0
CY8CTMA443 (8C20401A)
4131142
611148870
G-TAIWAN
48
500
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 2.07V, Vcc Max)
CY8CTMA443 (8C20401A)
4129433
611148871
G-TAIWAN
80
116
0
CY8CTMA443 (8C20401A)
4129433
611148871
G-TAIWAN
500
116
0
4130520
611147744
G-TAIWAN
COMP
5
0
STRESS: INTERNAL VISUAL
CY8CTMA443 (8C20401A)
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 12 of 19
Document No. 001-91144 Rev. *B
ECN #: 4624766
Reliability Test Data
QTP #: 113905
Device
Fab Lot #
Assy Lot #
Assy Loc
Duration
Samp
Rej
Failure Mechanism
STRESS: PRESSURE COOKER TEST (121C, 100%RH, 15 Psig), PRE COND 192 HR 30C/60%RH (MSL3)
CY8CTMA443 (8C20401B)
4140358
611153802
CML-RA
168
77
0
CY8CTMA443 (8C20401B)
4140358
611153802
CML-RA
288
77
0
CY8CTMA443 (8C20401A)
4130520
611147744
G-TAIWAN
168
80
0
CY8CTMA443 (8C20401A)
4130520
611147744
G-TAIWAN
288
80
0
CY8CTMA443 (8C20401A)
4129433
611148871
G-TAIWAN
168
80
0
CY8CTMA443 (8C20401A)
4129433
611148871
G-TAIWAN
288
80
0
STRESS: TEMPERATURE CYCLE (COND. C, -65C TO 150C), PRE COND 192 HR 30C/60%RH (MSL3)
CY8CTMA443 (8C20401B)
4140358
611153802
CML-RA
500
83
0
CY8CTMA443 (8C20401B)
4140358
611153802
CML-RA
1000
83
0
CY8CTMA443 (8C20401A)
4130520
611147744
G-TAIWAN
500
79
0
CY8CTMA443 (8C20401A)
4130520
611147744
G-TAIWAN
1000
79
0
CY8CTMA443 (8C20401A)
4129433
611148871
G-TAIWAN
500
80
0
CY8CTMA443 (8C20401A)
4129433
611148871
G-TAIWAN
1000
80
0
CY8CTMA443 (8C20401A)
4131142
611148867
G-TAIWAN
500
80
0
CY8CTMA443 (8C20401A)
4131142
611148867
G-TAIWAN
1000
80
0
G-TAIWAN
200
80
0
G-TAIWAN
COMP
2
0
COMP
6
0
STRESS: THERMAL SHOCK (COND. B, -55C TO 125C)
CY8CTMA443 (8C20401A)
4130520
611147744
STRESS: THERMAL JUNCTION MEASUREMENT
CY8CTMA443 (8C20401A)
4130520
611147744
STRESS: STATIC LATCH-UP TESTING (125C, 8.25V, +/-140mA)
CY8CTMA443 (8C20401B)
4140358
611153802
CML-RA
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 13 of 19
Document No. 001-91144 Rev. *B
ECN #: 4624766
Reliability Test Data
QTP #: 123502
Device
Fab Lot #
Assy Lot #
Assy Loc Duration
Samp
Rej
Failure Mechanism
STRESS: DATA RETENTION, PLASTIC, 150C
CY8C4245 (8CC44200A)
4251883
611301729
TAIIWAN-G
500
70
0
CY8C4245 (8CC44200A)
4251883
611301729
TAIIWAN-G
1000
70
0
CY8C4245 (8CC44200A)
4251883
611302906
TAIWAN-G
168
80
0
CY8C4245 (8CC44200A)
4251883
611302906
TAIWAN-G
500
80
0
611302905
TAIWAN-G COMP
9
0
STRESS: ENDURANCE
STRESS:
ESD-CHARGE DEVICE MODEL, (500V)
CY8C4245 (8CC44200A)
4251883
CY8C4245 (8CC44200A)
4251883
611303718
TAIWAN-G COMP
9
0
CY8C4245 (8CC44200A)
4251883
611302173
CML-RA
COMP
9
0
611302905
TAIWAN-G COMP
3
0
STRESS:
ESD-CHARGE DEVICE MODEL, (1000V)
CY8C4245 (8CC44200A)
4251883
CY8C4245 (8CC44200A)
4251883
611303718
TAIWAN-G COMP
3
0
CY8C4245 (8CC44200A)
4251883
611302173
CML-RA
COMP
3
0
STRESS:
ESD-CHARGE DEVICE MODEL, (1250V)
CY8C4245 (8CC44200A)
4251883
611302905
TAIWAN-G COMP
3
0
CY8C4245 (8CC44200A)
4251883
611303718
TAIWAN-G COMP
3
0
CY8C4245 (8CC44200A)
4251883
611302173
CML-RA
3
0
9
0
TAIWAN-G COMP
3
0
TAIWAN-G COMP
6
0
TAIWAN-G COMP
2
0
TAIWAN-G COMP
2
0
COMP
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V)
CY8C4245 (8CC44200A)
4251883
611302905
TAIWAN-G COMP
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (3,300V)
CY8C4245 (8CC44200A)
4251883
611302905
STRESS: STATIC LATCH-UP (85C, 140mA)
CY8C4245 (8CC44200A)
4251883
611302905
STRESS: STATIC LATCH-UP (85C, 180mA)
CY8C4245 (8CC44200A)
4251883
611302905
STRESS: STATIC LATCH-UP (125C, 140mA)
CY8C4245 (8CC44200A)
4251883
611302905
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150, 2.07V, Vcc Max)
CY8C4245 (8CC44200A)
4251883
611303750
TAIWAN-G
48
189
0
CY8C4245 (8CC44200A)
4251883
611302906
TAIWAN-G
48
1111
0
CY8C4245 (8CC44200A)
4251883
611307128N
TAIWAN-G
48
1093
0
CY8C4245 (8CC44200A)
4251883
611308275
TAIWAN-G
48
1049
0
CY8C4245 (8CC44200A)
4251883
611308282
TAIWAN-G
48
1049
0
STRESS:
HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE REGULATOR ON (150, 2.07V, Vcc Max)
CY8C4245 (8CC44200A)
4251883
611302906
TAIWAN-G
48
39
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 2.07V, Vcc Max)
CY8C4245 (8CC44200A)
4251883
611302906
TAIWAN-G
80
151
0
CY8C4245 (8CC44200A)
4251883
611302906
TAIWAN-G
500
151
0
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 14 of 19
Document No. 001-91144 Rev. *B
ECN #: 4624766
Reliability Test Data
QTP #: 123502
Device
Fab Lot # Assy Lot #
Assy Loc
Duration
Samp
Rej
32
0
Failure Mechanism
STRESS: PRE/POST LFR PARAMETER ASSESSMENT
CY8C4245 (8CC44200A)
4251883
611303750
TAIWAN-G COMP
STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 192 HR 30C/60%RH (MSL3)
CY8C4245 (8CC44200A)
4251883
611301729
TAIIWAN-G
168
77
0
CY8C4245 (8CC44200A)
4251883
611301729
TAIIWAN-G
288
77
0
STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH (MSL3)
CY8C4245 (8CC44200A)
4251883
611301729
TAIIWAN-G
500
77
0
CY8C4245 (8CC44200A)
4251883
611301729
TAIIWAN-G
1000
76
0
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 15 of 19
Document No. 001-91144 Rev. *B
ECN #: 4624766
Reliability Test Data
QTP #: 132802
Device
Fab Lot #
Assy Lot #
Assy Loc Duration
Samp
Rej
Failure Mechanism
STRESS: DATA RETENTION, PLASTIC, 150C
CY8CMBR (8C44300A)
4339140
611341917
CML-RA
500
80
0
CY8CMBR (8C44300A)
4339140
611341917
CML-RA
1000
79
0
STRESS: ENDURANCE+DRET
CY8CMBR (8C44300A)
4339140
611341917
CML-RA
Cycling
62
0
CY8CMBR (8C44300A)
4339140
611341917
CML-RA
168
62
0
CY8CMBR (8C44300A)
4339140
611341917
CML-RA
500
62
0
CY8CMBR (8C44300A)
4339140
611341917
CML-RA
168
18
0
CY8CMBR (8C44300A)
4339140
611341917
CML-RA
500
18
0
STRESS:
ESD-CHARGE DEVICE MODEL(500V)
CY8CMBR (8C44300A)
4339140
611341917
CML-RA
COMP
9
0
CY8CMBR (8C44300A)
4339140
611341918
CML-RA
COMP
9
0
CY8CMBR (8C44300A)
4339140
611341913
CML-RA
COMP
9
0
CY8CMBR (8C44300A)
4339216
611343474
CML-RA
COMP
9
0
STRESS:
ESD-CHARGE DEVICE MODEL, (1000V)
CY8CMBR (8C44300A)
4339140
611341917
CML-RA
COMP
3
0
CY8CMBR (8C44300A)
4339140
611341918
CML-RA
COMP
3
0
CY8CMBR (8C44300A)
4339140
611341913
CML-RA
COMP
3
0
CY8CMBR (8C44300A)
4339216
611343474
CML-RA
COMP
3
0
STRESS:
ESD-CHARGE DEVICE MODEL, (1250V)
CY8CMBR (8C44300A)
4339140
611341917
CML-RA
COMP
3
0
CY8CMBR (8C44300A)
4339140
611341918
CML-RA
COMP
3
0
CY8CMBR (8C44300A)
4339140
611341913
CML-RA
COMP
3
0
CY8CMBR (8C44300A)
4339216
611343474
CML-RA
COMP
3
0
CML-RA
COMP
5
0
CML-RA
COMP
5
0
STRESS:
ESD-CHARGE DEVICE MODEL, (1500V)
CY8CMBR (8C44300A)
STRESS:
4339140
611341913
ESD-CHARGE DEVICE MODEL, (1750V)
CY8CMBR (8C44300A)
4339216
611343474
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (1,100V)
CY8CMBR (8C44300A)
4339140
611341917
CML-RA
COMP
3
0
CY8CMBR (8C44300A)
4339140
611341913
CML-RA
COMP
3
0
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V)
CY8CMBR (8C44300A)
4339140
611341917
CML-RA
COMP
8
0
CY8CMBR (8C44300A)
4339140
611341913
CML-RA
COMP
9
0
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (3,300V)
CY8CMBR (8C44300A)
4339140
611341917
CML-RA
COMP
3
0
CY8CMBR (8C44300A)
4339140
611341913
CML-RA
COMP
3
0
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 16 of 19
Document No. 001-91144 Rev. *B
ECN #: 4624766
Reliability Test Data
QTP #: 132802
Device
Fab Lot # Assy Lot #
Assy Loc
Duration
Samp
Rej
Failure Mechanism
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (5,000V)
CY8CMBR (8C44300A)
4339140
611341913
CML-RA
COMP
5
0
5
0
5
0
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (6,000V)
CY8CMBR (8C44300A)
4339140
611341913
CML-RA
COMP
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (7,000V)
CY8CMBR (8C44300A)
4339216
611343474
CML-RA
COMP
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (8,000V)
CY8CMBR (8C44300A)
4339216
611343474
CML-RA
COMP
5
0
STRESS: STATIC LATCH-UP (85C, +/-140mA)
CY8CMBR (8C44300A)
4339140
611341917
CML-RA
COMP
6
0
CY8CMBR (8C44300A)
4339140
611341913
CML-RA
COMP
6
0
STRESS: STATIC LATCH-UP (85C, +/-180mA)
CY8CMBR (8C44300A)
4339140
611341917
CML-RA
COMP
2
0
CY8CMBR (8C44300A)
4339140
611341913
CML-RA
COMP
2
0
CML-RA
COMP
6
0
CML-RA
COMP
6
0
STRESS: STATIC LATCH-UP (85C, +/-300mA)
CY8CMBR (8C44300A)
4339140
611341913
STRESS: STATIC LATCH-UP (85C, +/-360mA)
CY8CMBR (8C44300A)
4339140
611341913
STRESS: STATIC LATCH-UP (125C, +/-140mA)
CY8CMBR (8C44300A)
4339140
611341917
CML-RA
COMP
2
0
CY8CMBR (8C44300A)
4339140
611341913
CML-RA
COMP
2
0
STRESS:
HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE REGULATOR ON (150, 2.07V, Vcc Max)
CY8CMBR (8C44300A)
4339140
611341918
CML-RA
48
50
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150, 2.07V, Vcc Max)
CY8CMBR (8C44300A)
4339140
611341918
CML-RA
48
1521
1
CY8CMBR (8C44300A)
4339126
611342408
CML-RA
48
1504
0
132802-2E1, NVD
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 2.07V, Vcc Max)
CY8CMBR (8C44300A)
4339216
611342408
CML-RA
500
119
0
CML-RA
COMP
10
0
STRESS: PRE/POST LFR PARAMETER ASSESSMENT
CY8CMBR (8C44300A)
4339140
611341913
STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 168 HR 30C/60%RH (MSL3)
CY8CMBR (8C44300A)
4339140
611341917
CML-RA
168
80
0
CY8CMBR (8C44300A)
4339140
611341917
CML-RA
288
80
0
CY8CMBR (8C44300A)
4339140
611341918
CML-RA
168
79
0
CY8CMBR (8C44300A)
4339140
611341918
CML-RA
288
79
0
CY8CMBR (8C44300A)
4339140
611341918
CML-RA
168
75
0
CY8CMBR (8C44300A)
4339140
611341918
CML-RA
288
75
0
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 17 of 19
Document No. 001-91144 Rev. *B
ECN #: 4624766
Reliability Test Data
QTP #: 132802
Device
Fab Lot # Assy Lot #
Assy Loc
Duration
Samp
Rej
Failure Mechanism
STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH (MSL3)
CY8CMBR (8C44300A)
4339140
611341917
CML-RA
500
79
0
CY8CMBR (8C44300A)
4339140
611341917
CML-RA
1000
79
0
CY8CMBR (8C44300A)
4339140
611341918
CML-RA
500
79
0
CY8CMBR (8C44300A)
4339140
611341918
CML-RA
1000
79
0
CY8CMBR (8C44300A)
4339140
611341913
CML-RA
500
80
0
CY8CMBR (8C44300A)
4339140
611341913
CML-RA
1000
80
0
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 18 of 19
Document No. 001-91144 Rev. *B
ECN #: 4624766
Document History Page
Document Title:
Document Number:
QTP 140703: QUALIFICATION OF CY8C4013/ CY8C4014 PSOC4 DEVICE FAMILY,
S8PF-10P TECHNOLOGY IN CMI FAB4
001-91144
Rev. ECN
Orig. of
No.
Change
**
4279883
ZIJ
Description of Change
*A
4290622
HSTO
*B
4624766
HSTO
Updated qualification report template in front page.
Deleted mold compound suffix in page4
Added Au wire Package QTP (#135107 and 135108) in Package
Availability in page 4.
Align qualification report based on the new template in the front page
Deleted “CY8CMBR3” in Product Description table.
Update Package Availability table
- Remove Au wire option
- Added 8L/16L SOIC package
- Added 28-Lead SSOP packae
- Added UTL-UT as qualified site for 16/24 Lead QFN
- Update assembly site name from ASE-G to ASE-K
Initial spec release
Distribution: WEB
Posting:
None
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 19 of 19
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