QTP#142304:QUALIFICATION OF CY8C4013 / CY8C4014 PSOC4 DEVICE FAMILY, S8PF-10R TECHNOLOGY, FAB3 HHGRACE

Document No. 001-92842 Rev. *B
ECN #: 4624766
Cypress Semiconductor
Product Qualification Report
QTP# 142304 VERSION *A
July 2014
PSoC4 Family
S8PF-10R, Fab 3 HHGrace
CY8C4013
CY8C4014
Programmable System-on-Chip
(PSoC)
FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT
[email protected] or via a CYLINK CRM CASE
Prepared By:
Honesto Sintos
Reliability Engineer
Reviewed By:
Zhaomin Ji
Reliability Manager
Approved By:
Richard Oshiro
Reliability Director
Company Confidential
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Page 1 of 16
Document No. 001-92842 Rev. *B
ECN #: 4624766
PRODUCT QUALIFICATION HISTORY
QTP
Number
Description of Qualification Purpose
Date
090706
Qualification of Capsense (CY8C20X36A, CY8C20X46A, CY8C20X66A,
CY8C20X96A) Device in Fab 5 GSMC on S8DIN-5R Process
Mar 10
100101
Qualification of Touch Screen PSoC Device in S8TMC-5R Process at
GSMC
Apr 10
124505
Qualification of 5th Generation Touch Screen (TSG5_M) device using
S8P12-10P technology at GSMC-Fab 5
May 13
142304
Qualification of CY8C4013/ CY8C4014 PSoC4 Family, S8PF-10R
Technology in HHGrace-Fab3
June 14
Company Confidential
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Page 2 of 16
Document No. 001-92842 Rev. *B
ECN #: 4624766
PRODUCT DESCRIPTION (for qualification)
Qualification Purpose: To Qualify CapSense Controller device family, S8PF-10R Technology in HHGrace Fab3
Marketing Part #:
CY8C4013 / CY8C4014
Device Description:
5V, Industrial Programmable System on a Chip
Cypress Division:
Cypress Semiconductor Corporation – Programmable System Division (PSD)
TECHNOLOGY/FAB PROCESS DESCRIPTION
Number of Metal Layers:
5
Metal
Composition:
Metal 1: 150A Ti /250A TiN / 3200Al-0.5%Cu / 90A Ti/500A TiN
Metal 2: 150A Ti /250A TiN/ 3200Al-0.5%Cu / 90A Ti/500A TiN
Metal 3: 150A Ti /250A TiN 6500Al-0.5%Cu / 90A Ti/500A TiN
Metal 4: 150A Ti /250A TiN 6500Al-0.5%Cu / 90A Ti/500A TiN
Metal 5: 190A Ti/450A TiN/10000A Al-0.5% Cu/90A Ti/200A TiN
NFUSOX / 1K oxide / 6k Nitride
Passivation Type and Thickness:
Generic Process Technology/Design Rule (-drawn): S8PF-10R
Gate Oxide Material/Thickness (MOS):
SiO2 / 32A/110A
Name/Location of Die Fab (prime) Facility:
Fab 3 / HHGrace, Shanghai China
Die Fab Line ID/Wafer Process ID:
S8PF-10R
ALTERNATIVE FAB FACILITY SITE
FAB SITE
LOCATION
QTP NUMBER
CMI Fab 4
MINNESOTA, USA
132802
PACKAGE AVAILABILITY
PACKAGE
ASSEMBLY FACILITY SITE
WIRE
QTP NUMBER
16-Lead QFN
CML-RA
CuPd
140804
16-Lead QFN
ASE-K
CuPd
134505
16/24 -Lead QFN
UTL-UT
CuPd
141704
8-Lead SOIC
UTL-UT
CuPd
134513
16-Lead SOIC
UTL-UT
CuPd
134506
28-Lead SSOP
CML-RA
CuPd
145006
28-Lead SSOP
JCET-JT
CuPd
145005
Note: Package Qualification details upon request.
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Page 3 of 16
Document No. 001-92842 Rev. *B
ECN #: 4624766
MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION
Package Designation:
Package Outline, Type, or Name:
Mold Compound Name/Manufacturer:
LQ44A, LQ48A
Mold Compound Flammability Rating:
44 & 48 Quad Flat No-Lead (QFN)
7470LA / Nitto
UL94 – V0
Oxygen Rating Index:
None
Lead Frame Material:
Copper
Lead Finish, Composition / Thickness:
NiPdAu
Die Backside Preparation
Method/Metallization:
Backgrind
Die Separation Method:
100% Saw
Die Attach Supplier:
Henkel
Die Attach Material:
QMI-519
Die Attach Method:
Epoxy
Bond Diagram Designation:
001-78882
Wire Bond Method:
Thermosonic
Wire Material/Size:
CuPd 0.8 mil
Thermal Resistance Theta JA °C/W:
31.36 C/W
Package Cross Section Yes/No:
N/A
Assembly Process Flow:
001-69810
Name/Location of Assembly (prime) facility:
CML-RA
MSL Level
3
Reflow Profile
260C
ELECTRICAL TEST / FINISH DESCRIPTION
Test Location:
CML-RA, ASE-KH, UTAC-UT
Note: Please contact a Cypress Representative for other package availability.
Company Confidential
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Page 4 of 16
Document No. 001-92842 Rev. *B
ECN #: 4624766
RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS
Stress/Test
Test Condition (Temp/Bias)
High Temperature Operating Life
Dynamic Operating Condition, 150°C, 2.1V, 48 Hours
Early Failure Rate (EFR)
JESD22-A-108
High Temperature Operating Life
Dynamic Operating Condition, 150°C, 2.1V/5.5V, 48 Hours
Early Failure Rate (EFR) – Regulator On
JESD22-A-108
High Temperature Operating Life
Dynamic Operating Condition, 150°C, 2.1V, 500 Hours
Latent Failure Rate (LFR)
JESD22-A-108
High Temperature Steady State life
Low Temperature Operating Life
Endurance
Static Operating Condition, 150°C, 5.75.V, Vcc Max
JESD22-A-108
Dynamic Operating Condition, -30°C, 2.1V
JESD22-A-108
10K Cycles, Per datasheet, JESD22-A117
Result
P/F
P
P
P
P
P
P
150°C, 1000 Hours
Data Retention
JESD22-A117 and JESD22-A103
MIL-STD-883, Method 1010, Condition C, -65 °C to 150°C
Precondition: JESD22 Moisture Sensitivity Level 3
Temperature Cycle
P
P
192 Hrs, 30C/60%RH+ Reflow, 260°C+0, -5°C
High Accelerated Saturation Test
JEDEC STD 22-A110: 130°C, 85% RH, 5.25V/5.5V
Precondition: JESD22 Moisture Sensitivity Level 3
(HAST)
P
192 Hrs, 30C/60%RH+ Reflow, 260°C+0, -5°C
JESD22-A102:121°C /100%RH, 15 PSIG
Precondition: JESD22 Moisture Sensitivity Level 3
Pressure Cooker
P
192 Hrs, 30C/60%RH+ Reflow, 260°C+0, -5°C
200C, 4hrs
Aged Bond Strength
P
MIL-STD-883, Method 883-2011
Electrostatic Discharge
Human Body Model (ESD-HBM)
2200V/ 3300V/ 4000V/5000V/ 6000V, JESD22-A114
Electrostatic Discharge
Charge Device Model (ESD-CDM)
500V/750V/ 1000V/ 1250V/ 1500V/1750V, JESD22-C101
Electrostatic Discharge
P
P
200V, JESD22-A115
P
150C, 9.0 V JESD78
P
Machine Model (ESD-MM)
Dynamic Latch-Up
± 140mA, 125C/85°C, 8.25V
Static Latch-up
± 300mA, 85C, 9.1V
Acoustic Microscopy
P
JESD78
J-STD-020
Precondition: JESD22 Moisture Sensitivity Level 3
192 Hrs, 30C/60%RH+ Reflow, 260°C+0, -5°C
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Page 5 of 16
P
Document No. 001-92842 Rev. *B
ECN #: 4624766
RELIABILITY FAILURE RATE SUMMARY
Stress/Test
Failure Rate
Device Tested/
Device Hours
#
Fails
Activation
Energy
Thermal
AF3
High Temperature Operating Life
Early Failure Rate
1,503
0
N/A
N/A
0 PPM
High Temperature Operating Life
Long Term Failure Rate
902,240 DHRs
0
0.7
170
6 FIT
1
2
3
1
2
Assuming an ambient temperature of 55C and a junction temperature rise of 15C.
Chi-squared 60% estimations used to calculate the failure rate.
Thermal Acceleration Factor is calculated from the Arrhenius equation
E  1 1  
AF = exp  A  -  
 k  T2 T1  
where:
EA =The Activation Energy of the defect mechanism.
-5
K = Boltzmann’s constant = 8.62x10 eV/Kelvin.
T1 is the junction temperature of the device under stress and T2 is the junction temperature of the
device at use conditions.
1
2
Early Failure Rate was computed from QTPs 142304
Long Term Failure Rate was computed from QTPs 090706, 100101, 124505 & 142304 LFR Data.
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Page 6 of 16
Document No. 001-92842 Rev. *B
ECN #: 4624766
Reliability Test Data
QTP #: 090706
Device
Fab Lot # Assy Lot #
Assy Lot
Duration
Samp
Rej
Failure Mechanism
STRESS: ACOUSTIC, MSL3
CY8C20466A (8C204665A) 4926959
610927071
CML-RA
COMP
15
0
CY8C20466A (8C204665A) 4934292
610931047
CML-RA
COMP
15
0
CY8C20466A (8C204665A) 4938497
610935369
CML-RA
COMP
15
0
CY8C20466A (8C204665A) 4926959
610927071
CML-RA
COMP
3
0
CY8C20466A (8C204665A) 4934292
610931047
CML-RA
COMP
3
0
CY8C20466A (8C204665A) 4938497
610935369
CML-RA
COMP
3
0
STRESS: AGE BOND STRENGTH
STRESS: DATA RETENTION, PLASTIC, 150C
CY8C20466A (8C204665A) 4926959
610927071
CML-RA
500
77
0
CY8C20466A (8C204665A) 4926959
610927071
CML-RA
1000
77
0
CY8C20466A (8C204665A) 4926959
610927071
CML-RA
1446
77
0
CY8C20466A (8C204665A) 4934292
610931047
CML-RA
500
80
0
CY8C20466A (8C204665A) 4934292
610931047
CML-RA
1000
80
0
CY8C20466A (8C204665A) 4938497
610935369
CML-RA
500
80
0
CY8C20466A (8C204665A) 4938497
610935369
CML-RA
1000
80
0
CY8C20566A (8C205665A) 4926959
610926865
CML-R
168
77
0
CY8C20566A (8C205665A) 4926959
610926865
CML-R
524
77
0
CY8C20566A (8C205665A) 4934292
610931057
CML-R
168
78
0
CY8C20566A (8C205665A) 4938497
610935104
CML-R
168
77
0
STRESS: ENDURANCE
STRESS:
ESD-CHARGE DEVICE MODEL, (500V)
CY8C20066A (8C200665A) 4926959
610926836
Malaysia-CA COMP
9
0
CY8C20066A (8C200665A) 4934292
610932270
Malaysia-CA COMP
9
0
CY8C20066A (8C200665A) 4938497
610935356
Malaysia-CA COMP
9
0
Company Confidential
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Page 7 of 16
Document No. 001-92842 Rev. *B
ECN #: 4624766
Reliability Test Data
QTP #: 090706
Device
Fab Lot #
Assy Lot #
Assy Loc
Duration
Samp
Rej
Failure Mechanism
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V)
CY8C20066A (8C200665A) 4926959
610926836
Malaysia-CA COMP
8
0
CY8C20066A (8C200665A) 4934292
610932270
Malaysia-CA COMP
8
0
CY8C20066A (8C200665A) 4938497
610935356
Malaysia-CA COMP
8
0
STRESS: STATIC LATCH-UP (125C, 8.25V, 140mA)
CY8C20066A (8C200665A) 4926959
610926836
Malaysia-CA COMP
6
0
CY8C20066A (8C200665A) 4934292
610932270
Malaysia-CA COMP
6
0
CY8C20066A (8C200665A) 4938497
610935356
Malaysia-CA COMP
6
0
CML-RA
5
0
STRESS: DYNAMIC LATCH-UP (150C, 9.0V)
CY8C20466A (8C204665A) 4926959
610927071
COMP
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150, 2.1V, Vcc Max)
CY8C20466A (8C204665A) 4926959
610927071
CML-RA
48
1000
0
CY8C20466A (8C204665A) 4934292
610931047
CML-RA
48
1000
0
CY8C20466A (8C204665A) 4938497
610935369
CML-RA
48
1000
0
STRESS:
HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE REGULATOR ON (150, 5.5V, Vcc Max)
CY8C20466A (8C204665A) 4926959
610927071
CML-RA
48
45
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 2.1V, Vcc Max)
CY8C20466A (8C204665A) 4926959
610927071
CML-RA
80
400
0
CY8C20466A (8C204665A) 4926959
610927071
CML-RA
500
399
0
CY8C20466A (8C204665A) 4934292
610931047
CML-RA
500
444
0
CY8C20466A (8C204665A) 4938497
610935369
CML-RA
80
400
0
CY8C20466A (8C204665A) 4938497
610935369
CML-RA
500
400
0
STRESS: HIGH TEMP STEADY STATE LIFE TEST (150C, 5.75V)
CY8C20466A (8C204665A) 4926959
610927071
CML-RA
80
77
0
CY8C20466A (8C204665A) 4926959
610927071
CML-RA
168
77
0
500
83
0
STRESS: LOW TEMPERATURE DYNAMIC OPERATING LIFE, -30C, 2.1V
CY8C20566A (8C205665A) 4926959
610926865
CML-R
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Page 8 of 16
Document No. 001-92842 Rev. *B
ECN #: 4624766
Reliability Test Data
QTP #: 090706
Device
Fab Lot #
Assy Lot #
Assy Loc Duration
Samp
Rej
Failure Mechanism
STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 5.25V), PRE COND 192 HR 30C/60%RH (MSL3)
CY8C20466A (8C204665A) 4948407GSMC610946935
CML-RA
128
80
0
CY8C20466A (8C204665A) 4948407ª2
610947114
CML-RA
128
80
0
CY8C20466A (8C204665A) 4948407ª3
611002233
CML-RA
128
80
0
STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 192 HR 30C/60%RH (MSL3)
CY8C20466A (8C204665A) 4948407GSMC610946935
CML-RA
168
80
0
CY8C20466A (8C204665A) 4948407ª2
610947114
CML-RA
168
80
0
CY8C20466A (8C204665A) 4948407ª3
611002233
CML-RA
168
80
0
STRESS: TC COND. C –65C TO 150C, PRE COND 192 HRS 30C/60%RH (MSL3)
CY8C20466A (8C204665A) 4926959
610927071
CML-RA
500
76
0
CY8C20466A (8C204665A) 4934292
610931047
CML-RA
500
80
0
CY8C20466A (8C204665A) 4934292
610931047
CML-RA
1000
80
0
CY8C20466A (8C204665A) 4938497
610935369
CML-RA
500
80
0
610931047
CML-RA
COMP
1
0
STRESS:
SEM CROSS SECTION
CY8C20066A (8C20066AC) 4934292
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Page 9 of 16
Document No. 001-92842 Rev. *B
ECN #: 4624766
Reliability Test Data
QTP #:100101
Device
Fab Lot # Assy Lot #
Assy Lot
Duration
Samp
Rej
Failure Mechanism
STRESS: ACOUSTIC, MSL3
CY8CTMA300EES
4016083
611028818
MB-PHIL
COMP
15
0
CY8CTMA300EES
4016083
611028819
MB-PHIL
COMP
15
0
CY8CTMA300EES
4021994
611028331
MB-PHIL
COMP
15
0
STRESS: DATA RETENTION, PLASTIC, 150C
CY8CTMA300EES
4016083
611021260
MB-PHIL
500
77
0
CY8CTMA300EES
4016083
611021260
MB-PHIL
1000
77
0
CY8CTMA300EES
4016083
611021260
MB-PHIL
1500
77
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150C, 2.07V, Vcc Max)
CY8CTMA300EES
4016083
611021260
MB-PHIL
48
500
0
CY8CTMA300EES
4016083
611028818
MB-PHIL
48
1540
0
CY8CTMA300EES
4021994
611028331
MB-PHIL
48
1528
0
STRESS:
HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE REGULATOR ON (150C, 2.07V, Vcc Max)
CY8CTMA300EES
4021994
611028331
MB-PHIL
48
50
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 2.07V, Vcc Max)
CY8CTMA300EES
4016083
611028818
MB-PHIL
80
118
0
CY8CTMA300EES
4016083
611028818
MB-PHIL
500
116
0
CY8CTMA300EES
4021994
611028331
MB-PHIL
80
116
0
CY8CTMA300EES
4021994
611028331
MB-PHIL
500
115
0
CY8CTMA300EES
4016083
611021260
MB-PHIL
168
80
0
CY8CTMA300EES
4016083
611021260
MB-PHIL
500
80
0
STRESS: ENDURANCE
STRESS:
ESD-CHARGE DEVICE MODEL, (500V)
CY8CTMA300EES
4016083
611021260
MB-PHIL
COMP
9
0
CY8CTMA300EES
4021994
611028331
MB-PHIL
COMP
9
0
8
0
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V)
CY8CTMA300EES
4021994
611028331
MB-PHIL
COMP
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Page 10 of 16
Document No. 001-92842 Rev. *B
ECN #: 4624766
Reliability Test Data
QTP #:100101
Device
Fab Lot # Assy Lot #
Assy Lot
Duration
Samp
Rej
Failure Mechanism
STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 5.5V), PRE COND 192 HR 30C/60%RH (MSL3)
CY8CTMA300EES
4021994
611028331
MB-PHIL
128
8
0
STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 192 HR 30C/60%RH (MSL3)
CY8CTMA300EES
4016083
611021260
MB-PHIL
168
80
0
CY8CTMA300EES
4021994
611028331
MB-PHIL
168
80
0
MB-PHIL
COMP
6
0
STRESS: STATIC LATCH-UP (85C, 8.25V, 90mA)
CY8CTMA300EES
4021994
611028331
STRESS: TC COND. C –65C TO 150C, PRE COND 192 HRS 30C/60%RH (MSL3)
CY8CTMA300EES
4016083
611028818
MB-PHIL
500
80
0
CY8CTMA300EES
4016083
611028819
MB-PHIL
500
80
0
CY8CTMA300EES
4021994
611028331
MB-PHIL
500
80
0
Company Confidential
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Page 11 of 16
Document No. 001-92842 Rev. *B
ECN #: 4624766
Reliability Test Data
QTP #:124505
Device
Fab Lot # Assy Lot #
Assy Lot
Duration
Samp
Rej
Failure Mechanism
STRESS: DATA RETENTION
CY8CTMA440 (8CC205001B) 4301809
611300880
CML-RA
500
80
0
CY8CTMA440 (8CC205001B) 4301809
611300880
CML-RA
1000
79
0
CY8CTMA440 (8CC205001B) 4301809
611300880
CML-RA
168
80
0
CY8CTMA440 (8CC205001B) 4301809
611300880
CML-RA
500
80
0
CML-RA
COMP
9
0
CML-RA
COMP
15
0
COMP
8
0
COMP
6
0
STRESS: ENDURANCE
STRESS:
ESD-CHARGE DEVICE MODEL, (500V)
CY8CTMA440 (8CC205001B) 4301809
STRESS:
611300880
ESD-CHARGE DEVICE MODEL, (750V)
CY8CTMA440 (8CC205002B) 4301809
6113011261
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114, (2,200V)
CY8CTMA440 (8CC205001B) 4301809
611300880
CML-RA
STRESS: STATIC LATCH-UP (85C, 2.93V/8.25V, +/-140mA)
CY8CTMA440 (8CC205001B) 4301809
611300880
CML-RA
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150, 2.1V, Vcc Max)
CY8CTMA440 (8CC205001B) 4301809
611300880
CML-RA
48
498
0
CY8CTMA440 (8CC205001B) 4301809
611300880
CML-RA
48
990
0
CY8CTMA440 (8CC205001B) 4301809
611300880
CML-RA
48
827
0
CY8CTMA440 (8CC205001B) 4301809
611300880
CML-RA
48
721
0
CY8CTMA440 (8CC205001B) 4301809
611300880
CML-RA
48
594
0
CY8CTMA445 (8CC205001B) 4301809
611304958
CML-RA
48
1205
CY8CTMA445 (8CC205001B) 4301809
611304958
CML-RA
48
345
0
CY8CTMA445 (8C205001B) 4301809
611306104
CML-RA
48
1382
0
CY8CTMA445 (8C205001B) 4301809
611306104
CML-RA
48
168
0
CY8CTMA445 (8C205001B) 4301809
611306104
CML-RA
48
756
0
1 – Scan Failure
Company Confidential
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Page 12 of 16
Document No. 001-92842 Rev. *B
ECN #: 4624766
Reliability Test Data
QTP #:124505
Device
Fab Lot # Assy Lot #
Assy Lot
Duration
Samp
Rej
Failure Mechanism
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 2.1V, Vcc Max)
CY8CTMA440 (8CC205001B)4301809
611300880
CML-RA
80
126
0
CY8CTMA440 (8CC205001B)4301809
611300880
CML-RA
500
126
0
STRESS: TC COND. C –65C TO 150C, PRE COND 192 HRS 30C/60%RH (MSL3)
CY8CTMA440 (8CC205001B)4301809
611300880
CML-RA
500
80
0
CY8CTMA440 (8CC205001B)4301809
611300880
CML-RA
1000
80
0
STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 192 HR 30C/60%RH (MSL3)
CY8CTMA440 (8CC205001B)4301809
611300880
CML-RA
168
80
0
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 13 of 16
Document No. 001-92842 Rev. *B
ECN #: 4624766
Reliability Test Data
QTP #: 142304
Device
Fab Lot # Assy Lot #
Assy Lot
Duration
Samp
Rej
Failure Mechanism
STRESS: DATA RETENTION, 150C
CY8C4014 (8CP44304B) 5412006
611415880
CML-RA
500
80
0
CML-RA
168
77
0
CML-RA
COMP
9
0
CML-RA
COMP
3
0
CML-RA
COMP
3
0
CML-RA
COMP
3
0
CML-RA
COMP
3
0
CML-RA
COMP
3
0
8
0
3
0
3
0
3
0
STRESS: ENDURANCE, CYLCLING + DATA BAKE (150C)
CY8C4014 (8CP44304B) 5412006
611415880
STRESS: ESD-CHARGE DEVICE MODEL (500V)
CY8C4014 (8CP44304B) 5412006
611415880
STRESS: ESD-CHARGE DEVICE MODEL (750V)
CY8C4014 (8CP44304B) 5412006
611415880
STRESS: ESD-CHARGE DEVICE MODEL (1000V)
CY8C4014 (8CP44304B) 5412006
611415880
STRESS: ESD-CHARGE DEVICE MODEL (1250V)
CY8C4014 (8CP44304B) 5412006
611415880
STRESS: ESD-CHARGE DEVICE MODEL (1500V)
CY8C4014 (8CP44304B) 5412006
611415880
STRESS: ESD-CHARGE DEVICE MODEL (1750V)
CY8C4014 (8CP44304B) 5412006
611415880
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B (2,200V)
CY8C4014 (8CP44304B) 5412006
611415880
CML-RA
COMP
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B (3,300V)
CY8C4014 (8CP44304B) 5412006
611415880
CML-RA
COMP
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B (4,000V)
CY8C4014 (8CP44304B) 5412006
611415880
CML-RA
COMP
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B (5,000V)
CY8C4014 (8CP44304B) 5412006
611415880
CML-RA
COMP
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B (6,000V)
CY8C4014 (8CP44304B) 5412006
611415880
CML-RA
COMP
3
0
CML-RA
COMP
5
0
STRESS: ESD-MACHINE MODEL, (200V)
CY8C4014 (8CP44304B) 5412006
611415880
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 14 of 16
Document No. 001-92842 Rev. *B
ECN #: 4624766
Reliability Test Data
QTP #: 142304
Device
Fab Lot # Assy Lot #
Assy Lot
Duration
Samp
Rej
Failure Mechanism
STRESS: STATIC LATCH-UP (85C, +/-140mA)
CY8C4014 (8CP44304B) 5412006
611415880
CML-RA
COMP
6
0
CML-RA
COMP
3
0
CML-RA
COMP
3
0
CML-RA
COMP
3
0
STRESS: STATIC LATCH-UP (85C, +/-200mA)
CY8C4014 (8CP44304B) 5412006
611415880
STRESS: STATIC LATCH-UP (125C, +/-140mA)
CY8C4014 (8CP44304B) 5412006
611415880
STRESS: STATIC LATCH-UP (85C, +/-300mA)
CY8C4014 (8CP44304B) 5412006
611415880
STRESS: HIGH TEMPERATURE DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150, 2.1V, Vcc Max)
CY8C4014 (8CP44304B) 5412006
611415880
CML-RA
48
1503
0
STRESS: HIGH TEMPERATURE DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150, 2.1V, Vcc Max)
CY8C4014 (8CP44304B) 5412006
611415880
CML-RA
80
118
0
611415880
CML-RA
168
80
0
80
0
STRESS: PRESSURE COOKER TEST
CY8C4014 (8CP44304B) 5412006
STRESS: TC COND. C -65 TO 150C, PRE COND 192 HRS 30C/60% RH (MSL3)
CY8C4014 (8CP44304B) B5412006
611415880
CML-RA
500
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 15 of 16
Document No. 001-92842 Rev. *B
ECN #: 4624766
Document History Page
Document Title:
QTP#142304: QUALIFICATION OF CY8C4013 / CY8C4014 PSOC4 DEVICE FAMILY, S8PF10R TECHNOLOGY, FAB3 HHGRACE
001-92842
Document Number:
Rev. ECN
Orig. of
No.
Change
**
4404221
HSTO
*A
4411698
HSTO
*B
4624766
HSTO
Description of Change
Initial Spec Release
Updated technology from S8P12-10R to S8PF-10R in title page and
page 2.
Updated Technology/Fab Process Description at page 3.
Update Package Availability table at page 3.
- Removed Au wire option
- Add 8L/16L SOIC package option
- Update assembly site name from ASE-G to ASE-K
Update Package Availability table
- Add 28-Lead SSOP package
Distribution: WEB
Posting:
None
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 16 of 16
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