QTP I000006.pdf

Document No. 001-87070 Rev. **
ECN #: 3960510
Cypress Semiconductor
Product Qualification Report
QTP# I000006 (IMI Acquisition)
March 2007
TS60D [0.6um CMOS]– Tower (Fab28)
Base Devices RX11, RF06, & KB14
CMOS5SF [Micrus] – IBM/NY (Fab32),
Base Devices ZB15 and ZB17
CSM 0.35um Logic Salicide – Charter Semiconductor (Fab11),
Base Devices A35C, B35C, D35C, E35C, F35C, and G35C
CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA:
Mira Ben-Tzur
Reliability Director
(408) 943-2675
Rene Rodgers
Reliability Engineer, MTS
(408) 943-2732
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 1 of 16
Document No. 001-87070 Rev. **
ECN #: 3960510
PRODUCT QUALIFICATION HISTORY
QTP
Number
I000006
I000006
Description of Qualification Purpose
Qualification Summary for Cypress Acquisition of IMI Devices and Packages (Feb.
23, 2001)
Added new device data gathered, B35C qualified base die
(CY2LL843*, CY2SSTV16859*,CY2AVC16835*)
Date
Feb 03
May 04
042304
7C827042AR Mask Option of the D35C base die
Jul 04
I000006
Added new device data gathered, D35C qualified base die
(CY25561, CY25562)
Feb 06
I000006
Added device CY2SSTV855
Mar 07
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 2 of 16
Document No. 001-87070 Rev. **
ECN #: 3960510
DIE QUALIFICATION TEST RESULTS
RX11 base die platform (0.6um, CMOS, Tower Semiconductor, Israel)
Test
Conditions
Test Points
Test Results
Comments
Life Test
Military or Industry
Standard
MIL-STD-883 Method 1005
140oC/5.5V
Life Test
MIL-STD-883 Method 1005
140oC/5.5V
Life Test
MIL-STD-883 Method 1005
140oC/5.5V
Life Test
MIL-STD-883 Method 1005
140oC/5.5V
Latch-up
JESD78
240
480
240
480
240
480
240
480
200 mA
0/116
0/116
0/116
0/116
0/116
0/116
0/116
0/116
0/5
500 cycles
0/45
Lot T2000
(IMIXG571)
Lot T2004
(IMISC608)
Lot T2131
(IMISG577)
Lot T2213
(IMISC608)
Lot T2000
(IMIXG571)
Lot T2000
(IMIXG571)
HTS
150C
KB14 base die platform (0.6um, CMOS, Tower Semiconductor, Israel)
Test
Life Test
Military or Industry
Standard
MIL-STD-883 Method 1005
Latch-up
JESD78
ESD
MIL-STD-883 Method 3015
HTS
Conditions
Test Points
Test Results
Comments
140oC/5.5V
240
480
200 mA
0/116
0/116
0/5
HBM
500V
750V
1000V
500 cycles
0/3
0/3
1/3
0/45
Lot T2014
(IMISM530)
Lot T2014
(IMISM530)
Lot T2014
(IMISM530)
150C
Lot T2014
(IMISM530)
RF06 base die platform (1.0 uM, CMOS, 2 layers metal, Tower Semiconductor, Israel)
Test
Life Test
Military or Industry
Standard
MIL-STD-883 Method 1005
Conditions
Life Test
MIL-STD-883 Method 1005
125oC/5.5V
ESD
MIL-STD-883 Method 3015
HBM
Latch-up
JESD78
125oC/5.5V
Test Points
Test Results
168
500
1000
168
500
1000
1000V
1500V
2000V
0/77
0/77
0/77
0/116
0/116
0/116
0/3
0/3
3/3
200 mA
0/5
Comments
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 3 of 16
Lot T2055
(IMI4347)
Lot T3118
(IMIFS741)
Lot T2055
(IMI4347)
Lot T2055
(IMI4347)
Document No. 001-87070 Rev. **
ECN #: 3960510
ZB15/17 base die platform (0.35uM, CMOS, 2 layers metal, IBM-NY)
Test
Conditions
Life Test
Military or Industry
Standard
MIL-STD-883 Method 1005
Life Test
MIL-STD-883 Method 1005
125oC/5V
Life Test
MIL-STD-883 Method 1005
Life Test
TestPoints Test Results
140oC/5V
240
480
500
1000
480
0/116
0/116
0/116
0/116
0/77
MIL-STD-883 Method 1005
140oC/5V
480
ESD
MIL-STD-883 Method 3015
HBM
Latch-up
JESD78
2000V
3000V
4000V
5000V
200 mA
0/116
0/116
0/3
0/3
0/3
3/3
0/5
140oC/5V
Comments
Lot B5503-ZB17
(IMIZ9102)
Lot B6312-ZB17
(IMIZ9546)
Lot B5431-ZB15
(IMIZ9714)
Lot B6082-ZB15
(IMIZ9102)
Lot B6388-ZB17
(IMIZ9102)
Lot B6388-ZB17
(IMIZ9102)
A35C/G35C base die platform (0.35 uM, 3 layers metal, CMOS, CSM - Singapore)
Test
Conditions
Life Test
Military or Industry
Standard
MIL-STD-883 Method 1005
Life Test
MIL-STD-883 Method 1005
125oC/5V
Life Test
MIL-STD-883 Method 1005
125oC/5V
Life Test
MIL-STD-883 Method 1005
125oC/5V
ESD
MIL-STD-883 Method 3015
HBM
Latch-up
JESD78
ESD
MIL-STD-883 Method 3015
Latch-up
JESD78
125oC/5V
HBM
Test Points Test Results
Comments
500
1000
500
1000
500
1000
500
1000
1000V
1500V
2000V
200 mA
0/116
0/116
0/116
0/116
0/116
0/116
0/116
0/116
0/3
0/3
0/3
0/5
Lot C1008 /C1000A35C
Lot C1016-A35C
2000V
3000V
4000V
200 mA
0/3
0/3
0/3
0/5
Lot C1186-G35C
Lot C1138-A35C
Lot C1179-A35C
Lot C1026-A35C
Lot C1009-A35C
Lot C1186-G35C
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 4 of 16
Document No. 001-87070 Rev. **
ECN #: 3960510
B35C base die platform (0.35 uM, 3 layers metal, CMOS, CSM-Singapore)
Test
Conditions
Test Points
Test Results
Comments
Life Test
Military or Industry
Standard
MIL-STD-883 Method 1005
125oC/5V
MIL-STD-883 Method 1005
125oC/5V
ESD
MIL-STD-883 Method 3015
HBM
Latch-up
JESD78
0/116
0/116
0/116
0/116
0/3
0/3
0/3
3/3
0/5
Lot C1035-B35C
Life Test
500
1000
500
1000
2000V
3000V
4000V
5000V
200 mA
Lot C1035-B35C
Lot C1035-B35C
Lot C1035-B35C
D35C/E35C/F35C base die platform (0.35 uM, 3 layers metal, CMOS, CSM- Singapore)
Test
Life Test
Military or Industry
Standard
MIL-STD-883 Method 1005
Conditions
150oC/3.3V
Life Test
MIL-STD-883 Method 1005
150oC/3.3V
Life Test
MIL-STD-883 Method 1005
ESD
MIL-STD-883 Method 3015
150oC/3.3V
HBM
Latch-up
JESD78
ESD
MIL-STD-883 Method 3015
Latch-up
JESD78
ESD
MIL-STD-883 Method 3015
Latch-up
JESD78
HBM
HBM
Test
Points
168
332
72
596
168
Test
Results
0/116
0/116
0/116
0/116
0/116
Comments
2000V
3000V
4000V
5000V
200 Ma
0/3
0/3
0/3
0/3
0/5
Lot C1214-D35C
2000V
3000V
4000V
200 mA
0/3
0/3
0/2
0/5
Lot C1281-E35C
2000V
3000V
4000V
200 mA
0/3
0/3
0/2
0/5
Lot C1189-F35C
Lot C1061-D35C
Lot C1024-D35C
Lot C1130-D35C
Lot C1214-D35C
Lot C1281-E35C
Lot C1189-F35C
Company Confidential
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Page 5 of 16
Document No. 001-87070 Rev. **
ECN #: 3960510
PACKAGE QUALIFICATION TEST RESULTS
SOIC (150Mils)
Test
Military or
Industry Standard
MIL-STD-883
Method 1010
Test
Points
500
Test
Results
0/76
500 cycles,
-65/+ 150oC
168 Hours, 100%
RH, 121oC, 2 atm
168
0/76
MIL-STD-883
Method 1010
500 cycles,
-65/+ 150oC
500
0/76
Pressure Pot
JEDEC Std. 22
Test Method 102
168 Hours, 100%
RH, 121oC, 2 atm
168
0/76
Temperature
Cycle
MIL-STD-883
Method 1010
500 cycles,
-65/+ 150oC
500
0/76
Pressure Pot
JEDEC Std. 22
Test Method 102
168 Hours, 100%
RH, 121oC, 2 atm
168
0/76
Temperature
Cycle
MIL-STD-883
Method 1010
500 cycles,
-65/+ 150oC
500
0/76
Pressure Pot
JEDEC Std. 22
Test Method 102
168 Hours, 100%
RH, 121oC, 2 atm
168
0/76
Physical
Dimension
Resistance to
Solvent
Solderability
JEDEC Spec.
Applicable drawing
N/A
0/12
Preconditioned
Units, CWT,
lot C1179
Preconditioned
Units, CWT,
lot C1179
Preconditioned
Units, SPEL,
lot T2959
Preconditioned
Units, SPEL,
lot T2959
Preconditioned
Units, CWT,
lot B6399
Preconditioned
Units, CWT,
lot B6399
Preconditioned
Units, SIG-K,
lot F5216
Preconditioned
Units, SIG-K,
lot F5216
Performed by CWT
Pressure Pot
JEDEC Std. 22
Test Method 102
Temperature
Cycle
N/A
0/12
Performed by CWT
N/A
0/5
Performed by CWT
N/A
N/A
0/20
0/12
Performed by CWT
Performed by SPEL
N/A
0/12
Performed by SPEL
N/A
0/5
Performed by SPEL
N/A
N/A
0/20
0/12
Performed by SPEL
Performed by SIG-K
N/A
0/12
Performed by SIG-K
Temperature
Cycle
Coplanarity
Physical
Dimension
Resistance to
Solvent
Solderability
Coplanarity
Physical
Dimension
Resistance to
Solvent
MIL-STD-883
Method 2015
MIL-STD-883
Method 2003
JEDEC Spec.
JEDEC Spec.
MIL-STD-883
Method 2015
MIL-STD-883
Method 2003
JEDEC Spec.
JEDEC Spec.
MIL-STD-883
Method 2015
Conditions
260 Deg, 5 sec
95% Min Coverage
Max = 4 Mil
Applicable drawing
260 Deg, 5 sec
95% Min Coverage
Max = 4 Mil
Applicable drawing
Comments
Company Confidential
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Page 6 of 16
Document No. 001-87070 Rev. **
ECN #: 3960510
Solderability
Coplanarity
MIL-STD-883
Method 2003
JEDEC Spec.
260 Deg, 5 sec
95% Min Coverage
Max = 4 Mil
N/A
0/5
Performed by SIG-K
N/A
0/20
Performed by SIG-K
PACKAGE QUALIFICATION TEST RESULTS
SSOP (209Mils)
Test
Military or
Industry Standard
MIL-STD-883
Method 1010
Test
Points
500
Test
Results
0/76
500 cycles,
-65/+ 150oC
168 Hours, 100%
RH, 121oC, 2 atm
168
0/76
MIL-STD-883
Method 1010
500 cycles,
-65/+ 150oC
500
0/76
Pressure Pot
JEDEC Std. 22
Test Method 102
168 Hours, 100%
RH, 121oC, 2 atm
168
0/76
Physical
Dimension
Resistance to
Solvent
Solderability
JEDEC Spec.
Applicable drawing
N/A
0/12
Preconditioned
Units, OSE,
Lot T2408
Preconditioned
Units, OSE,
Lot T2408
Preconditioned
Units, OSE,
Lot T2415
Preconditioned
Units, OSE,
Lot T2415
Performed by OSE
Pressure Pot
JEDEC Std. 22
Test Method 102
Temperature
Cycle
N/A
0/12
Performed by OSE
N/A
0/5
Performed by OSE
N/A
0/20
Performed by OSE
Test
Points
500
Test
Results
0/45
Comments
168 Hours, 100%
RH, 121oC, 2 atm
168
0/45
Preconditioned Units
SIG-K, LOT F4461
500 cycles,
-65/+ 150oC
500
0/76
Preconditioned Units
OSE, LOT C1141
Temperature
Cycle
Coplanarity
MIL-STD-883
Method 2015
MIL-STD-883
Method 2003
JEDEC Spec.
Conditions
260 Deg, 5 sec
95% Min Coverage
Max = 4 Mil
Comments
TSSOP(170Mils)
Test
Temperature
Cycle
Military or
Industry Standard
MIL-STD-883
Method 1010
Conditions
500 cycles,
-65/+ 150oC
Preconditioned Units
SIG-K LOT F4461
Pressure Pot
JEDEC Std. 22
Test Method 102
Temperature
Cycle
MIL-STD-883
Method 1010
Pressure Pot
JEDEC Std. 22
Test Method 102
168 Hours, 100%
RH, 121oC, 2 atm
168
0/76
Preconditioned Units
OSE, LOT C1141`
Physical
Dimension
JEDEC Spec.
Applicable drawing
N/A
0/12
Performed by SIG-K
Company Confidential
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Page 7 of 16
Document No. 001-87070 Rev. **
ECN #: 3960510
Resistance to
Solvent
Solderability
Coplanarity
MIL-STD-883
Method 2015
MIL-STD-883
Method 2003
JEDEC Spec.
260 Deg, 5 sec
95% Min Coverage
Max = 4 Mil
N/A
0/12
Performed by SIG-K
N/A
0/5
Performed by OSE
N/A
0/20
Performed by OSE
PACKAGE QUALIFICATION TEST RESULTS
TSSOP(240Mils)
Test
Military or
Industry Standard
MIL-STD-883
Method 1010
Test
Points
500
Test
Results
0/76
500 cycles,
-65/+ 150oC
Pressure Pot
JEDEC Std. 22
Test Method 102
168 Hours, 100%
RH, 121oC, 2 atm
168
0/76
PreconditionedUnits
OSE, Lot F6182
Temperature
Cycle
MIL-STD-883
Method 1010
500 cycles,
-65/+ 150oC
500
0/76
Preconditioned Units
SIG-K. Lot F3966
Pressure Pot
JEDEC Std. 22
Test Method 102
168 Hours, 100%
RH, 121oC, 2 atm
168
0/76
Preconditioned Units
SIG-K, Lot F3966
Physical
Dimension
Resistance to
Solvent
Solderability
JEDEC Spec.
Applicable drawing
N/A
0/12
Performed by OSE
N/A
0/12
Performed by OSE
N/A
0/5
Performed by OSE
N/A
N/A
0/20
0/12
Performed by OSE
Performed by SIG-K
N/A
0/12
Performed by SIG-K
N/A
0/5
Performed by SIG-K
N/A
0/20
Performed by SIG-K
Temperature
Cycle
Coplanarity
Physical
Dimension
Resistance to
Solvent
Solderability
Coplanarity
MIL-STD-883
Method 2015
MIL-STD-883
Method 2003
JEDEC Spec.
JEDEC Spec.
MIL-STD-883
Method 2015
MIL-STD-883
Method 2003
JEDEC Spec.
Conditions
260 Deg, 5 sec
95% Min Covrg
Max = 4 Mil
Applicable drawing
260 Deg, 5 sec
95% Min Coverage
Max = 4 Mil
Comments
Preconditioned Units
OSE. Lot F6182
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 8 of 16
Document No. 001-87070 Rev. **
ECN #: 3960510
PACKAGE QUALIFICATION TEST RESULTS
TQFP
Test
Military or
Industry Standard
MIL-STD-883
Method 1010
Test
Points
500
Test
Results
0/76
500 cycles,
-65/+ 150oC
Pressure Pot
JEDEC Std. 22
Test Method 102
168 Hours, 100%
RH, 121oC, 2 atm
168
0/76
Preconditioned Units
MHT, Lot B6747
Temperature
Cycle
MIL-STD-883
Method 1010
500 cycles,
-65/+ 150oC
500
0/76
Preconditioned Units
SIG-K, Lot B6562
Pressure Pot
JEDEC Std. 22
Test Method 102
168 Hours, 100%
RH, 121oC, 2 atm
168
0/76
Preconditioned Units
SIG-K, Lot B6562
Temperature
Cycle
MIL-STD-883
Method 1010
500 cycles,
-65/+ 150oC
500
0/45
Preconditioned Units
MHT, Lot B6262
Pressure Pot
JEDEC Std. 22
Test Method 102
168 Hours, 100%
RH, 121oC, 2 atm
168
0/45
Preconditioned Units
MHT, Lot B6262
Physical
Dimension
Resistance to
Solvent
Solderability
JEDEC Spec.
Applicable drawing
N/A
0/12
Performed by MHT
N/A
0/12
Performed by MHT
N/A
0/5
Performed by MHT
N/A
N/A
0/20
0/12
Performed by MHT
Performed by SIG-K
N/A
0/12
Performed by SIG-K
N/A
0/5
Performed by SIG-K
N/A
0/20
Performed by SIG-K
Temperature
Cycle
Coplanarity
Physical
Dimension
Resistance to
Solvent
Solderability
Coplanarity
MIL-STD-883
Method 2015
MIL-STD-883
Method 2003
JEDEC Spec.
JEDEC Spec.
MIL-STD-883
Method 2015
MIL-STD-883
Method 2003
JEDEC Spec.
Conditions
260 Deg, 5 sec
95% Min Covrg
Max = 4 Mil
Applicable drawing
260 Deg, 5 sec
95% Min Coverage
Max = 4 Mil
Comments
Preconditioned Units
MHT, Lot B6747
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 9 of 16
Document No. 001-87070 Rev. **
ECN #: 3960510
A35C Base – Personalizations
MARKETING
ROOT #
DATE ISSUED
PACKAGE
9812I
C5003
005
C6001
C6005
C9429
C9530
C9531
C9630
C9631
C9641
C9703
C9706/07
C9713
C9725
C9726
C9727
C9730
C9801
C9806I
9829/9825
C9809
C9810/9815
C9824
C9827
C9827/C9832
C9835
C9836
C9837
C9840
C9842
C9843
C9844
C9846
C9849
C9850
C9851
9853
C9854
C9857
C9860
C9866
11/15/1999
06/26/2000
12/12/2000
01/12/2000
05/19/2000
07/19/2000
11/10/1999
11/10/1999
10/13/1999
04/04/2000
12/06/1999
11/08/1999
12/06/1999
04/12/2000
10/16/2000
06/27/2000
06/27/2000
01/10/2000
01/28/2000
04/04/2000
11/30/1999
02/11/2000
10/25/1999
11/22/1999
04/05/2000
09/18/2000
02/10/2000
09/11/2000
09/11/2000
12/06/1999
02/28/2000
02/28/2000
09/14/2000
06/02/2000
03/17/2000
11/19/1999
09/30/1999
12/01/1999
10/04/2000
10/11/2000
06/02/2000
09/11/2000
56 SSOP
56 SSOP
48 TSSOP/SSOP
16 TSSOP
8 SOIC
28 SOIC
48 SSOP/TSSOP
28 SSOP/TSSOP
48 SSOP
48 SSOP
48 SSOP/TSSOP
48 SSOP
48 SSOP
48 SSOP
28 TSSOP
48 SSOP
48 SSOP
48 SSOP
56 SSOP
48 SSOP/ TSSOP
56 SSOP
48 SSOP
56 SSOP
56 SSOP
56 SSOP
56 TSSOP
56SSOP
48SSOP/TSSOP
48SSOP/TSSOP
48 SSOP
56 SSOP
48 SSOP
48 SSOP
48 SSOP
56 SSOP
56 SSOP/TSSOP
48 TSSOP
48 SSOP/TSSOP
48 SSOP
48 SSOP
48 SSOP
48SSOP
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 10 of 16
Document No. 001-87070 Rev. **
ECN #: 3960510
C9869
C9870
C9909
C9910
C9911
09/11/2000
11/20/2000
01/24/2000
02/08/2001
03/06/2001
56SSOP
56 TSSOP / SSOP
56 SSOP/48 SSOP
56 SSOP
48 SSOP
A35C Base – Personalizations (Continued)
MARKETING
ROOT #
DATE ISSUED
C9914
06/02/2000
C9926
C9945
C9946
SM560
SM561
SM562
SM564
SM565
SM566
08/04/2000
10/26/2000
10/26/2000
10/06/2000
10/06/2000
10/16/2000
09/18/2000
09/18/2000
05/16/2000
PACKAGE
28 SSOP/TSSOP`
48 SSOP
56 SSOP
56 SSOP
8 SOIC
8 SOIC
8 SOIC
8 SOIC
16 SOIC
16 SOIC
B35C Base – Personalizations
Customer Specific Marketing Numbers
D35C Base - Personalizations
MARKETING
ROOT #
MANUFACTURING #
DATE ISSUED
PACKAGE
CY24240
7C825822A
07/12/2001
16 SOIC
CY24244
7C825822A
01/17/2002
16 SOIC
CY25560 (SM560)
7C825822A
06/13/2001
8 SOIC
CY22561
7C825822A
UNKNOWN
8 SOIC
CY22562
7C825822A
UNKNOWN
8 SOIC
CY25566
7C825822A
08/21/2001
16 SOIC
CY25822
7C825822A
05/23/2002
8 SOIC
CY25822-1
7C825822B
11/04/2002
8 SOIC
CY25822-2
7C858222B
11/06/2002
8 SOIC
CY27023
7C825822A
11/29/2001
16 TSSOP
CY27024
7C825822A
09/17/2001
16 TSSOP
CY27025
7C825822A
01/10/2002
16 TSSOP
CY27027
7C825822A
03/11/2002
16 TSSOP
CY27028-1/-2/-3/-4
7C825822A
03/11/2002
16 TSSOP
CY2DP814
7C825822A
08/29/2001
16 SOIC/TSSOP
CY2LL8422/23
7C825822A
04/12/2001
28TSSOP/SSOP
Company Confidential
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Page 11 of 16
Document No. 001-87070 Rev. **
ECN #: 3960510
E35C Base – Personalizations
MARKETING ROOT #
MANUF. PART #
DATE ISSUED
PACKAGE
CY22313
7C822313C
04/10/2003
24 TSSOP
CY24234
7C824234A
04/05/2001
16 TSSOP
CY24260/61
7C824260A
10/25/2001
20 TSSOP/16 TSSOP
CY24262
7C824262A
11/07/2001
20 TSSOP
CY27022
7C827022A
10/23/2001
8 SOIC
7C827030A
07/15/2002
16 TSSOP
7C827032A
08/13/2002
16 TSSOP
CY27030/-1/-2
CY27032
F35C Base – Personalizations
MARKETING
ROOT #
CY25568 - SM568
CY25811 - SM811
CY25812 - SM812
CY25814 - SM814
CY25818/819
CY25901
CY25901-1
CY25902
CY27020 (C6005)
CY27029
CY27029-1
CY27031
CY2DL814
CY2DP814
CY2LL842
CY2LL843 - LL843
CY2PC822
MANUF. PART #
DATE ISSUED
PACKAGE
7C825568B
7C825811B
7C825812B
7C825814B
7C825818A
7C825901A
7C859011A
7C825902A
7C827020A
7C827029A
7C870291A
7C827031A
7C8DL814A
7C8DP814A
7C8LL842CB
7C8LL843C
7C82822A
01/25/2001
02/22/2001
02/22/2001
02/01/2201
09/21/2001
09/19/2002
10/24/2002
09/19/2002
10/01/2001
08/16/2002
10/31/2002
10/31/2002
04/03/2001
07/26/2001
07/16/2001
07/16/2001
05/13/2002
16 SOIC
8 SOIC
8 SOIC
8 SOIC
8 SOIC
8 SOIC
8 SOIC
8 TSSOP
8 SOIC
14 SOIC
14 SOIC
8 SOIC
16 TSSOP/SSOP
16TSSOP/SSOP
16 TSSOP/SOIC
16 TSSOP/SOIC
8 SOIC
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 12 of 16
Document No. 001-87070 Rev. **
ECN #: 3960510
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 13 of 16
Document No. 001-87070 Rev. **
ECN #: 3960510
Reliability Test Data
B35C BASE DIE
Device
STRESS:
Fab Lot #
Assy Lot #
Assy Loc
Duration
Samp
Rej
ESD-CHARGE DEVICE MODEL, 500V
CY2SSTV16859 (7C826859A)
9210123
610334679
KOREA-L
COMP
2
0
CY2AVC16835 (7C81635ER)
9202732
610303336
TAIWAN-T
COMP
2
0
CY2SSTV16859 (7C826859A)
9210123
610249055
KOREA-GQ
COMP
3
0
CY2LL843 (7C82LL843CR)
9213233
TAIWAN-CH
COMP
3
0
STRESS:
610218031
ESD-CHARGE DEVICE MODEL, 750V
CY2SSTV16859 (7C826859A)
9210123
610334679
KOREA-L
COMP
1
0
CY2SSTV16859 (7C826859A)
9210123
610249055
KOREA-GQ
COMP
3
0
CY2LL843 (7C82LL843CR)
9213233
610218031
TAIWAN-CH
COMP
3
0
1
0
STRESS:
ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 1100V
CY2SSTV16859 (7C826859A)
STRESS:
9210123
610334679
KOREA-L
COMP
ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 2000V
CY2AVC16835 (7C81635ER)
9202732
610303336
TAIWAN-T
COMP
2
0
CY2LL843 (7C82LL843CR)
9213233
610218031
TAIWAN-CH
COMP
3
0
STRESS:
ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 2200V
CY2SSTV16859 (7C826859A)
9210123
610334679
KOREA-L
COMP
2
0
CY2AVC16835 (7C81635ER)
9202732
610303336
TAIWAN-T
COMP
2
0
CY2SSTV16859 (7C826859A)
9210123
610249055
KOREA-GQ
COMP
3
0
CY2LL843 (7C82LL843CR)
9213233
610218031
TAIWAN-CH
COMP
3
0
STRESS:
ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 2400V
CY2AVC16835 (7C81635ER)
9202732
610303336
TAIWAN-T
COMP
2
0
CY2SSTV16859 (7C826859A)
9210123
610249055
KOREA-GQ
COMP
3
0
CY2LL843 (7C82LL843CR)
9213233
610218031
TAIWAN-CH
COMP
3
0
COMP
3
0
COMP
2
0
STRESS:
STATIC LATCH-UP TESTING, 125C, 8.0V, ±300mA
CY2SSTV16859 (7C826859A)
STRESS:
Failure Mechanism
9210123
610334679
KOREA-L
STATIC LATCH-UP TESTING, 125C, 10V, ±300mA
CY2AVC16835 (7C81635ER)
9202732
610303336
TAIWAN-T
Company Confidential
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Page 14 of 16
Document No. 001-87070 Rev. **
ECN #: 3960510
CY2SSTV16859 (7C826859A)
9210123
610249055
KOREA-GQ
COMP
2
0
CY2LL843 (7C82LL843CR)
9213233
610218031
TAIWAN-CH
COMP
3
0
Reliability Test Data
QTP #: 042304
Device
STRESS:
Fab Lot #
Rej
SEOL-L
COMP
9
0
9
0
Failure Mechanism
9408719
610433454
9408719
610433454
SEOL-L
COMP
ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,200V
CY27042LFXC (7C827042A)
STRESS:
Duration Samp
ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 2,200V
CY27042LFXC (7C827042A)
STRESS:
Assy Loc
ESD-CHARGE DEVICE MODEL, 500V
CY27042LFXC (7C827042A)
STRESS:
Assy Lot #
9408719
610433454
SEOL-L
COMP
3
0
SEOL-L
COMP
3
0
STATIC LATCH-UP TESTING, 125C, 8.0V, ±300mA
CY27042LFXC (7C827042A)
9408719
610433454
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 15 of 16
Document No. 001-87070 Rev. **
ECN #: 3960510
Document History Page
Document Title:
QTP I000006: IMI ACQUISITION QUALIFICATION SUMMARY (CMOS/5SF) BASE DEVICES
A/B/C/D/E/F/G35C
001-87070
Document Number:
Rev. ECN
Orig. of
No.
Change
**
3960510 ILZ
Distribution: WEB
Posting:
Description of Change
Initial Spec Release
None
Company Confidential
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Page 16 of 16