Document No. 001-84798 Rev. *B ECN #:4583572 Cypress Semiconductor Product Qualification Report QTP# 98516 VERSION*B December, 2014 Low Voltage Synchronous/Asynchronous Dual Port SRAM R42D Technology, Fab 4 Qualification CY7C09079V/CY7C09179V 32K x 8/9 Synchronous DP SRAM CY7C09089V/CY7C09189V 64K x 8/9 Synchronous DP SRAM CY7C09099V/CY7C09199V 128K x 8/9 Synchronous DP SRAM CY7C09269V/CY7C09369V 16K x16/18 Synchronous DP SRAM CY7C09279V/CY7C09379V 32K x 16/18 Synchronous DP SRAM CY7C09289V/CY7C09389V 64K x 16/18 Synchronous DP SRAM CY7C008V/CY7C018V 64K x 8/9 Asynchronous DP SRAM CY7C009V/CY7C019V 128K x 8/9 Asynchronous DP SRAM CY7C027V/CY7C037V/AV 32K x 16/18 Asynchronous DP SRAM CY7C028V/CY7C038V 64K x 16/18 Asynchronous DP SRAM FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT [email protected] or via a CYLINK CRM CASE Prepared By: Josephine Pineda (JYF) Reliability Engineer Reviewed By: Zhaomin Ji (ZIJ) Reliability Manager Approved By: Richard Oshiro (RGO) Reliability Director Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 9 Document No. 001-84798 Rev. *B ECN #:4583572 PACKAGE/PRODUCT QUALIFICATION HISTORY QTP Number Description of Qualification Purpose 98368 NEW PRODUCT, 7C038A 5V R42HD IN FAB4 Sep 98 98516 New Product 7C038B, 3.3V, R42D Hot Aluminum In Fab4 May 99 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 9 Date Document No. 001-84798 Rev. *B ECN #:4583572 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: To qualify 7C038B, 3.3 Dual Port SRAM and its options in Fab 4, R42D with Hot Al. Marketing Part #: CY7C038V /CY7C037AV Package: 100 pins TQFP Device Description: 64K x 18 Synchronous Dual Port Static RAM, R42D Technology Cypress Division: Cypress Semiconductor Corporation – Memory Product Division (MPD) Overall Die (or Mask) REV Level (pre-requisite for qualification): Die Size (stepping): 225 mils x 365 mils Rev. B What ID markings on Die: 7C038VA TECHNOLOGY/FAB PROCESS DESCRIPTION – R42D w/ Hot Al Number of Metal Layers: 2 Metal Composition: Metal 1: 500Å TiW/6000Å Al -5%Cu/1200Å TiW Metal 2: 500Å TiW/8000Å Al -5%Cu/300Å TiW Passivation Type and Materials: 7000Å SiO2 + 6000Å Si3N4 Free Phosphorus contents in top glass layer(%): 0% Die Coating(s), if used: N/A Generic Process Technology/Design Rule (-drawn): CMOS, Double Metal /0.35 m Gate Oxide Material/Thickness (MOS): SiO2 / 70Å Name/Location of Die Fab (prime) Facility: Cypress Semiconductor – Bloomington, MN Die Fab Line ID/Wafer Process ID: Fab4/R42D w/ Hot Al Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 9 Document No. 001-84798 Rev. *B ECN #:4583572 PLASTIC PACKAGE/ASSEMBLY DESCRIPTION Package Outline, Type, or Name: 100-pin TQFP Mold Compound Name/Manufacturer: Hitachi CEL 9200 Lead Frame material: Copper Alloy 194 Lead Finish, composition: Solder Plated, 90%Sn, 10%Pb Die Attach Area Plating: Silver Spot Die Attach Method: Epoxy Die Attach Material: Ablestik 8361H Wire Bond Method: Thermosonic Wire Material/Size: Gold / 1.0 mil JESD22-A112 Moisture Sensitivity Level: Level 3 (previously qualified) Name/Location of Assembly (prime) facility: ASE, Taiwan (TAIWAN-G) Note: Please contact a Cypress Representative for other packages availability. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 9 Document No. 001-84798 Rev. *B ECN #:4583572 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS Stress/Test Test Condition (Temp/Bias) Result P/F High Temperature Operating Life Early Failure Rate Dynamic Operating Condition, Vcc = 3.8V150C High Temperature Operating Life Latent Failure Rate Dynamic Operating Condition, Vcc = 3.8V150C High Accelerated Saturation Test (HAST) JEDEC STD 22-A110 Electrostatic Discharge Human Body Model (ESD-HBM) MIL-STD-883, Method 3015.7 2200V P Electrostatic Discharge Charge Device Model (ESD-CDM) JESD22-C101 750V P Latchup Sensitivity In accordance with JEDEC 17 9V ±200Ma P Alpha Particle Sensitivity 2.6V & 4.0V, Room Temperature; 465,116 alpha/cm2-hr P JESD22-A-108 P JESD22-A-108 130C, 85%RH, 33.3PSIA, 5.5V Precondition: JESD22 Moisture Sensitivity Level 3 (192 Hrs, 30C/60%RH) Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 9 P 0 FIT Document No. 001-84798 Rev. *B ECN #:4583572 RELIABILITY FAILURE RATE SUMMARY Stress/Test High Temperature Operating Life 1 Early Failure Rate High Temperature Operating 2,3 Life Long Term Failure Rate 1 2 3 4 Device Tested/ Device Hours # Fails Activation Energy Thermal AF4 Failure Rate 1510 0 N/A N/A 0 PPM 142,080 DHRs 0 0.7 170 38 FIT A production burn-in of 48 Hrs at 150C, 4.3V is required for the product Assuming an ambient temperature of 55C and a junction temperature rise of 15C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. -5 K = Boltzmann’s constant = 8.62x10 Ev/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. 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Page 6 of 9 Document No. 001-84798 Rev. *B ECN #:4583572 RELIABILITY TEST DATA QTP#: 98516 DEVICE ASSY-LOC FABLOT# ASSYLOT# DURATION S/S REJ ==================== ======== ======== ============== ======== ==== === STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150C, 3.8V) CY7C038V-AC TAIWN-G 4902498 CY7C028V-AC TAIWN-G 4903566 CY7C028V-AC TAIWN-G 4903566 CY7C028V-AC TAIWN-G 4903566 STRESS: ESD-CHARGE DEVICE MODEL (750V) 619903202 48 505 0 619904225 619904225 619904225 48 48 48 420 345 240 0 0 0 3 0 CY7C028V-AC TAIWN-G 4903566 619904225 COMP STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015 (2200V) FAIL MODE ================================ CY7C028V-AC TAIWN-G 4903566 619904225 COMP 3 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 3.8V) CY7C038V-AC CY7C038V-AC TAIWN-G TAIWN-G 4902498 4902498 619903202 619903202 80 500 120 120 0 0 CY7C028V-AC TAIWN-G 4903566 619904225 80 396 0 CY7C028V-AC TAIWN-G 4903566 619904225 500 120 0 STRESS: HI-ACCEL SATURATION TEST (130C, 5.5V, 33.3 PSIA), PRECOND. 192 HRS 30C/60%RH ***CY7C09389V-AC CSPI-R 4902498 619903202 128 Note: *** Reliability Monitor data, #93180-92. the reject is not attributable to HAST testing. 50 0 (See note) One reject due to electrical overstress, Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 9 Document No. 001-84798 Rev. *B ECN #:4583572 DEVICE RELATED RELIABILITY TEST DATA 1 QTP#: 98368 DEVICE ASSY-LOC FABLOT# ASSYLOT# DURATION S/S REJ ==================== ======== ======== ============== ======== ==== === STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150C, 5.75V) CY7C09389-AC 619806813 48 289 0 CY7C09389-AC TAIWN-G 4821104 619808005 STRESS: ESD-CHARGE DEVICE MODEL (1,000V) 48 1234 0 CY7C09389-AC TAIWN-G 4818845 619806221 COMP 3 STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015 (1,100V) 0 CY7C09389-AC TAIWN-G 4818845 619806221 STRESS: PRESSURE COOKER TEST (121C, 100%RH) 3 0 CY7C09389-AC TAIWN-G 4818845 619806221 168 44 STRESS: TC COND. C, -65 TO 150C, PRECOND. 192 HRS 30C/60%RH (MSL 3) 0 CY7C09389-AC CY7C09389-AC 0 0 1 TAIWN-G TAIWN-G TAIWN-G 4818845 4818845 4818845 619806221 619806221 COMP 300 1000 48 48 FAIL MODE ================================ QTP 98368, Synchronous and Asynchronous Dual Port SRAM (3V and 5V), R42HD Technology, Fab 4 qualification. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 9 Document No.001-84798 Rev. *B ECN #: 4583572 Document History Page Document Title: QTP 98516: LOW VOLTAGE SYNCHRONOUS/ASYNCHRONOUS DUAL PORT SRAM R42D TECHNOLOGY, FAB 4 QUALIFICATION 001-84798 Document Number: Rev. ECN No. ** 3819942 *A 4040255 *B Orig. of Change NSR JYF 4583572 JYF Description of Change Initial Release Added CY7C037AV part no. in the qual report device coverage; Added industry standards of EFR, LFR and HAST in Reliability Tests Performed table. Sunset review: Updated QTP title page for template alignment. Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 9