Cypress Semiconductor Qualification Report QTP# 97242/96464VERSION 1.0 December, 1997 SYNCHRONOUS FIFOs - R3.0 TECHNOLOGY CY7C4255/4265 8K/16K x 18 Synchronous FIFOs CY7C4261/4271 16K/32K x 9 Synchronous FIFOs Cypress Semiconductor Synchronous FIFOs Device:CY7C42* Package: PLCC/LCC QTP# 97242/96464, V. 1.0 Page 2 of 7 December, 1997 PRODUCT DESCRIPTION Information provided in this document is intended for generic qualification and technically describes the Cypress part supplied: CY7C4255/CY7C4265/CY7C4261/CY7C4271 Marketing Part #: CY7C4265 CY7C4271 Package: 68-Lead PLCC 32-Lead LCC Device Description: 16K x 18 Synchronous FIFOs Cypress Division: Cypress Semiconductor Corporation - DCD Division Overall Die (or Mask) REV Level (pre-requisite for qualification): Die Size (stepping): 170 mils x 169 mils Rev. B What ID markings on Die: 7C4265A 7C42671A TECHNOLOGY/FAB PROCESS DESCRIPTION - R3.0 Number of Metal Layers: 2 Metal Composition: Passivation Type and Materials: Metal 1: 500Å TiW, 6000Å Al/0.5% Cu, 1200Å TiW Metal 2: 500Å TiW, 9000Å Al/0.5% Cu, 1200Å TiW 7000A TEOS + 6000A Nitride Free Phosphorus contents in top glass layer(%): 4% to 5% Generic Process Technology/Design Rule (µ-drawn): CMOS, Single Poly, Double Metal /0.5 µm Gate Oxide Material/Thickness (MOS): Name/Location of Die Fab (prime) Facility: Die Fab Line ID/Wafer Process ID: SiO2 / 145Å Cypress Semiconductor - Bloomington, MN Fab4/R3.0 Cypress Semiconductor Synchronous FIFOs Device:CY7C42* Package: PLCC/LCC QTP# 97242/96464, V. 1.0 Page 3 of 7 December, 1997 PLASTIC PACKAGE/ASSEMBLY DESCRIPTION Package Outline, Type, or Name: 68-Lead PLCC Mold Compound Name/Manufacturer: Nitto 8000CH (PLCC) Lead Frame material: Copper Die Coatings (if used): None Lead Finish, composition: Solder Plated, 85%Sn, 15%Pb Die Attach Area Plating: Silver Spot Die Attach Method: Paste Die Attach Material: Ablestik 8361H Wire Bond Method: Thermosonic Wire Material/Size: Gold / 1.3 mil JESD22-A12 Moisture Sensitivity Level Level 3 Name/Location of Assembly (prime) facility: Anam, Korea (KOREA-A) HERMETIC PACKAGE/ASSEMBLY DESCRIPTION Lead Frame material: Lead Finish, composition: Alloy 42 Solder Dipped, 63%Sn, 37% Pb Die Attach Area Plating: None Die Attach Method: Paste Wire Bond Method: Ultrasonic Die Attach Material: Silver Glass Wire Material/Size: Aluminum / 1.25 mil Name/Location of Assembly (prime) facility: Cypress Bangkok, Thailand (ALPHA-X) Note: Please contact a Cypress Representative for other packages availability. Cypress Semiconductor Synchronous FIFOs Device:CY7C42* Package: PLCC/LCC QTP# 97242/96464, V. 1.0 Page 4 of 7 December, 1997 RELIABILITY TESTS PERFORMED Stress/Test Test Condition (Temp/Bias) Result P/F High Temperature Operating Life Early Failure Rate Dynamic Operating Condition, Vcc = 5.75V, 150°C P High Temperature Operating Life Latent Failure Rate Dynamic Operating Condition, Vcc = 5.75V, 150°C P Group C, Subgroup 1 Life Test Vcc = 5.75V, 150°C P High Temperature Steady State Life Static Operating Condition, Vcc = 5.75V, 150°C P Read and Record Dynamic Operating Condition, Vcc = 5.75V, 150°C P High Accelerated Saturation Test (HAST) 140°C, 85%RH, 5.5V bias Precondition: JESD22 Moisture Sensitivity Level 3 (192 Hrs. 30°C/60%RH) P Temperature Cycle MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C Precondition: JESD22 Moisture Sensitivity Level 3 (192 Hrs. 30°C/60%RH) P Temperature Cycle, Hermetic Pkg MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C P Electrostatic Discharge Human Body Model (ESD-HBM) MIL-STD-883, Method 3015.7 Electrostatic Discharge Charge Device Model (ESD-CDM) Cypress Spec. 25-00020 Latchup Sensitivity In accordance with JEDEC 17. Cypress Spec. 01-00081 4,400V 500V (JC) 750 (LMB) P Cypress Semiconductor Synchronous FIFOs Device:CY7C42* Package: PLCC/LCC QTP# 97242/96464, V. 1.0 Page 5 of 7 December, 1997 RELIABILITY FAILURE RATE SUMMARY Stress/Test High Temperature Operating Life Early Failure Rate High Temperature Operating Life1,2 Long Term Failure Rate 1 2 3 4 Device Tested/ Device Hours # Fails Activation Energy Thermal AF4 Failure Rate 10293 0 N/A N/A 0 181,000 DHRs 0 0.6 170 30 FIT Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. Chi-squared 60% estimations used to calculate the failure rate. Early Failure Rate was not performed for commercial devices. A production burn-in of 128 Hrs., 150°C, 6.0V is performed for the device. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Cypress Semiconductor Synchronous FIFOs Device:CY7C42* Package: PLCC/LCC QTP# 97242/96464, V. 1.0 Page 6 of 7 December, 1997 RELIABILITY TEST DATA QTP#: 972421 DEVICE ASSY-LOC FABLOT# ASSYLOT# DURATION S/S REJ ==================== ======== ======== ============== ======== ==== === STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150C, 5.75V) FAIL MODE ================================ CY7C4271-LMB ALPHA-X 4710018 219705179/5180/ 48 324 0 CY7C4271-LMB ALPHA-X 4710018 219705179/5180/ 48 333 0 4 mechanical rejects CY7C4271-LMB ALPHA-X 4710018 219705179/5180/ 48 372 0 --------------------------------------------------------------------------------------------------------------STRESS: ESD-CHARGE DEVICE MODEL (750V) CY7C4271-LMB ALPHA-X 4710018 219705179/5180/ COMP 3 0 --------------------------------------------------------------------------------------------------------------STRESS: GROUP C, SUBGROUP 1, LIFE TEST (150C, 5.75V) CY7C4271-LMB ALPHA-X 4710018 219705179/5180/ 184 48 0 --------------------------------------------------------------------------------------------------------------STRESS: HIGH TEMP STEADY STATE LIFE TEST (150C, 5.75V) CY7C4271-LMB ALPHA-X 4710018 219705179/5180/ 80 78 0 CY7C4271-LMB ALPHA-X 4710018 219705179/5180/ 168 78 0 --------------------------------------------------------------------------------------------------------------STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 5.75V) CY7C4271-LMB ALPHA-X 4710018 219705179/5180/ 80 126 0 4 EOS CY7C4271-LMB ALPHA-X 4710018 219705179/5180/ 500 126 0 --------------------------------------------------------------------------------------------------------------STRESS: READ & RECORD LIFE TEST (150C, 5.75V) CY7C4271-LMB ALPHA-X 4710018 219705179/5180/ 80 10 0 CY7C4271-LMB ALPHA-X 4710018 219705179/5180/ 500 10 0 --------------------------------------------------------------------------------------------------------------STRESS: TC COND. C, -65 TO 150C, HERMETIC DEVICES CY7C4271-LMB CY7C4271-LMB 1 ALPHA-X ALPHA-X 4710018 4710018 219705179/5180/ 219705179/5180/ QTP 97242, Synchronous FIFOs, R3 Technology qualified in Fab 4, hermetic package. 100 1000 48 48 0 0 Cypress Semiconductor Synchronous FIFOs Device:CY7C42* Package: PLCC/LCC QTP# 97242/96464, V. 1.0 Page 7 of 7 December, 1997 RELIABILITY TEST DATA QTP#: 964642 DEVICE ASSY-LOC FABLOT# ==================== ======== ======== STRESS: ESD-CHARGE DEVICE MODEL (500V) ASSYLOT# ============== DURATION ======== S/S ==== REJ === FAIL MODE ================================ CY7C4265-JC KOREA-A 4645362 349700756 COMP 3 0 --------------------------------------------------------------------------------------------------------------STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015 (4,400V) CY7C4265-JC KOREA-A 4645362 349700756 COMP 3 0 --------------------------------------------------------------------------------------------------------------STRESS: HI-ACCEL SATURATION TEST (140C, 5.5V), PRECOND. 192 HRS 30C/60%RH CY7C4265-JC KOREA-A 4645362 349700756 128 91 0 2 EOS --------------------------------------------------------------------------------------------------------------STRESS: HIGH TEMP STEADY STATE LIFE TEST (150C, 5.75V) CY7C4265-JC KOREA-A 4645362 349700756 80 154 0 1 EOS CY7C4265-JC KOREA-A 4645362 349700756 168 153 0 1 EOS --------------------------------------------------------------------------------------------------------------STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 5.75V) CY7C4265-JC KOREA-A 4645362 349700756 80 254 0 3 EOS CY7C4265-JC KOREA-A 4645362 349700756 500 236 0 18 EOS --------------------------------------------------------------------------------------------------------------STRESS: TC COND. C, -65 TO 150C, PRECOND. 192 HRS 30C/60%RH CY7C4265-JC KOREA-A 4645362 349700756 1 BROKEN BOND NECK DUE TO POPCORN (See Note) --------------------------------------------------------------------------------------------------------------- Note: Corrective action was assigned (C971403Q). September, 1997. 2 300 93 1 To prevent re-occurence, Anam implemented a permanent fix in QTP 96464, Synchronous FIFOs, R3 Technology qualified in Fab 4, plastic package.