Cypress Semiconductor Product Qualification Report QTP# 063906 VERSION 1.1 November 2006 enCoRe III S4AD-5 Technology, GSMC CY7C64215 enCoRe™ III Full Speed USB Controller CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Fredrick Whitwer Principal Reliability Engineer (408) 943-2722 Mira Ben-Tzur Quality Engineering Director (408) 943-2675 Cypress Semiconductor enCoRe™ III PSoC Radon, S4AD-5, GSMC Device: CY7C64125 QTP# 063906, V, 1.1 Page 2 of 9 November 2006 PRODUCT QUALIFICATION HISTORY Qual Report Description of Qualification Purpose Date Comp 060605 Qualify GSMC using PSoC Device Product Family on S4AD-5 Technology Aug 06 063906 Qualified by extension. CY7C64215 (enCoRe™ III) Oct 06 Cypress Semiconductor enCoRe™ III PSoC Radon, S4AD-5, GSMC Device: CY7C64125 QTP# 063906, V, 1.1 Page 3 of 9 November 2006 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Qualify enCoRe™ III PSoC Radon Device Family in S4D-5 Technology at GSMC Marketing Part #: CY7C64215 Device Description: 3.3V and 5V Industrial 24Mhz Programmable System on Chip Cypress Division: Cypress Semiconductor - Consumer and Computation Division TECHNOLOGY/FAB PROCESS DESCRIPTION S4AD-5 Number of Metal Layers: 2 Metal Composition: Metal 1: 250A TiN/5,800A Al/700A TiN Metal 2: 500A TiN/8,000A Al/250A TiN Passivation Type and Materials: 7,000A TeOs /6,000A Si3N4 Generic Process Technology/Design Rule (µ-drawn): Single Poly, Double Metal, 0.35 µm Gate Oxide Material/Thickness (MOS): SiO2 / 110A Name/Location of Die Fab (prime) Facility: GSMC/Shanghai-China Die Fab Line ID/Wafer Process ID: S4AD-5 PACKAGE AVAILABILITY PACKAGE ASSEMBLY SITE FACILITY 28-Lead SSOP PHIL-M, TAIWN-T 56-Lead MLF SEOL-L Note: Package Qualification details upon request. Cypress Semiconductor enCoRe™ III PSoC Radon, S4AD-5, GSMC Device: CY7C64125 QTP# 063906, V, 1.1 Page 4 of 9 November 2006 MAJOR PACKAGE INFORMATION FOR THIS QUALIFICATION Package Designation: SP28 Package Outline, Type, or Name: 28-Lead Shrunk Small Outline Package (SSOP) Mold Compound Name/Manufacturer: G600 Mold Compound Flammability Rating: V-0 PER UL-94 Oxygen Rating Index: >28% Lead Frame Material: Copper Lead Finish, Composition / Thickness: Pure Sn Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: 100% Saw Die Attach Supplier: Ablestik Die Attach Material: Ablebond 8290 Die Attach Method: Epoxy Bond Diagram Designation: 10-06565 Wire Bond Method: Thermosonic Wire Material/Size: Au. 1.0mil Thermal Resistance Theta JA °C/W: 90.0°C/W Package Cross Section Yes/No: N/A Assembly Process Flow: 49-41999 Name/Location of Assembly (prime) facility: Amkor-Phil MSL Level 1 Reflow Profile 260C ELECTRICAL TEST / FINISH DESCRIPTION Test Location: CML-R, CML-RA Note: Please contact a Cypress Representative for other packages availability. Cypress Semiconductor enCoRe™ III PSoC Radon, S4AD-5, GSMC Device: CY7C64125 QTP# 063906, V, 1.1 Page 5 of 9 November 2006 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT Stress/Test Test Condition (Temp/Bias) Result P/F High Temperature Operating Life Early Failure Rate Dynamic Operating Condition, Vcc Max=5.5V, 125°C P High Temperature Operating Life Latent Failure Rate Dynamic Operating Condition, Vcc Max=5.5V, 125°C P High Temperature Steady State life 125°C, 5.5V, Vcc Max P Low Temperature Operating Life -30°C, 5.5V P High Accelerated Saturation Test (HAST) 130°C, 5.25V, 85%RH Precondition: JESD22 Moisture Sensitivity Level 1 P 168 Hrs, 85C/85%RH+3IR-Reflow, 260°C+0, -5°C Temperature Cycle MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C Precondition: JESD22 Moisture Sensitivity Level 1 Pressure Cooker 121°C, 100%RH, 15 Psig Precondition: JESD22 Moisture Sensitivity Level 1 P 168 Hrs, 85C/85%RH+3IR-Reflow, 260°C+0, -5°C P 168 Hrs, 85C/85%RH+3IR-Reflow, 260°C+0, -5°C Acoustic Microscopy Spec. 25-00104 P Age Bond Strength 200C, 4hrs MIL-STD-883, Method 883-2011 P Data Retention 150°C ± 5°C No Bias Cypress Spec. 25-00060 P Dynamic Latch-up 125C, 8.5V P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V JESD22, Method A114-B P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V MIL-STD-883, Method 3015.7 P Electrostatic Discharge Charge Device Model (ESD-CDM) 500V Cypress Spec. 25-00020 P Endurance Test MIL-STD-883, Method 883-1033 P Static Latch-up 125C, ± 200mA Cypress Spec. 01-00081 P Cypress Semiconductor enCoRe™ III PSoC Radon, S4AD-5, GSMC Device: CY7C64125 QTP# 063906, V, 1.1 Page 6 of 9 November 2006 RELIABILITY FAILURE RATE SUMMARY Device Tested/ Device Hours # Fails Activation Energy Thermal3 A.F Failure Rate High Temperature Operating Life Early Failure Rate1 3,057 Devices 1 N/A N/A 327 PPM High Temperature Operating Life1, 2 Long Term Failure Rate 720,000DHRs 0 0 .7 55 23 FIT Stress/Test 1 Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. Chi-squared 60% estimations used to calculate the failure rate. 3 Thermal Acceleration Factor is calculated from the Arrhenius equation 2 E 1 1 AF = exp A - k T 2 T1 Where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Cypress Semiconductor enCoRe™ III PSoC Radon, S4AD-5, GSMC Device: CY7C64125 QTP# 063906, V, 1.1 Page 7 of 9 November 2006 Reliability Test Data QTP #: 060605 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej STRESS: ACOUSTIC, MSL1 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M COMP 15 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M COMP 15 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M COMP 15 0 STRESS: AGE BOND STRENGTH CY8C24494 (8C24494A) 9621713 610632687 PHIL-M COMP 10 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M COMP 10 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M COMP 10 0 STRESS: DATA RETENTION, PLASTIC, 150C CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 336 256 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 1000 256 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 1500 256 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 336 256 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 1000 256 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 336 256 0 9621713 610632687A PHIL-M COMP 47 0 STRESS: ENDURANCE CY8C24494 (8C24494A) STRESS: ESD-CHARGE DEVICE MODEL, (500V) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M COMP 9 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M COMP 9 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M COMP 9 0 CY8C24494 (8C24494A) 9623715 610635880 PHIL-M COMP 9 0 CY8C24494 (8C24795A) 9623716 610639349 SEOL-L COMP 9 0 CY8C24494 (8C24995A) 9623716 610639350 SEOL-L COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M COMP 9 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M COMP 9 0 CY8C24494 (8C24494A) 9623715 610635880 PHIL-M COMP 9 0 CY8C24494 (8C24995A) 9623716 610639350 SEOL-L COMP 9 0 Failure Mechanism Cypress Semiconductor enCoRe™ III PSoC Radon, S4AD-5, GSMC Device: CY7C64125 QTP# 063906, V, 1.1 Page 8 of 9 November 2006 Reliability Test Data QTP #: 060605 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, (2,200V) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M COMP 3 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M COMP 3 0 CY8C24494 (8C24494A) 9623715 610635880 PHIL-M COMP 3 0 CY8C24494 (8C24995A) 9623716 610639350 SEOL-L COMP 3 0 PHIL-M COMP 3 0 C-USA COMP 3 0 STRESS: STATIC LATCH-UP TESTING (125C, 8.5V, +/-200mA) CY8C24494 (8C24494A) 9623716 CY8C24494 (8C24994A) 9621713 CY8C24494 (8C24494A) 9623715 610638054 SEOL-L COMP 3 0 CY8C24494 (8C24995A) 9623716 610639350 SEOL-L COMP 3 0 PHIL-M COMP 2 0 610639767 STRESS: DYNAMIC LATCH-UP (125C, 8.5V) CY8C24494 (8C24494A) 9621713 610632687 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 5.5V, Vcc Max) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 96 1005 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 96 1144 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 96 908 1 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 5.5V, Vcc Max) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 168 180 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 1000 1800 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 168 180 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 1000 180 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 168 180 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 1000 180 0 CY8C24494 (8C24494A) 9623716 610639767A PHIL-M 1000 180 0 STRESS: HIGH TEMP STEADY STATE LIFE TEST (125C, 5.5V) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 168 80 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 336 80 0 45 0 STRESS: LOW TEMPERATURE DYNAMIC OPERATING LIFE, -30C, 5.5V CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 500 CAPACITOR DEFECT Cypress Semiconductor enCoRe™ III PSoC Radon, S4AD-5, GSMC Device: CY7C64125 QTP# 063906, V, 1.1 Page 9 of 9 November 2006 Reliability Test Data QTP #: 060605 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 5.25V), PRE COND 168 HR 85C/85%RH (MSL1) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 128 49 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 128 49 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 128 49 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 168 HR 85C/85%RH (MSL1) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 168 50 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 288 50 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 500 47 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 168 50 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 168 50 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 288 50 0 STRESS: TC COND. C -65C TO 150C, PRE COND 168 HRS 85C/85%RH (MSL1) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 300 50 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 500 50 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 1000 50 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 300 50 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 500 49 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 1000 49 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 300 50 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 500 49 0