Cypress Semiconductor Qualification Report QTP# 99083 VERSION 1.0 March, 1999 Low Voltage Synchronous FIFO – R28 Technology – Fab2 CY7C4245V/4235V/4225V/4215V/4205V/4425V 4K/2K/1K/512/256/64 x 18 Low Voltage Synchronous FIFOs 64 pins STQFP/68 pins PLCC Packages CY7C4251V/4241V/4231V/4221V/4211V/4201V/4421V 8K/4K/2K/1K/512/256/64 x 9 Low Voltage Synchronous FIFO 32 pins TQFP/PLCC Packages CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Manager (408)432-7069 Cypress Semiconductor Low Voltage Synchronous FIFO, R28 Technology, Fab 2 Device: CY7C4245V Package: 68-pin PLCC, 64-pin TQFP QTP# 99083, V. 1.0 Page 2 of 9 March, 1999 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: To transfer qualified Low Voltage Synchronous FIFO products, CY7C4245V (Rev. A) and its options, R28 technology from Fab 3 to Fab2. Marketing Part #: CY7C4245V Package: 68 pins PLCC 64 pins TQFP Device Description: 4K x 18 Synchronous FIFO Cypress Division: Cypress Semiconductor Corporation – DCD Division Overall Die (or Mask) REV Level (pre-requisite for qualification): Die Size (stepping): 160 mils x 170 mils Rev. A What ID markings on Die: 7C4345A TECHNOLOGY/FAB PROCESS DESCRIPTION - R28 Number of Metal Layers: 2 Metal Composition: Passivation Type and Materials: 7000A TEOS + 6000A Si2N4 Free Phosphorus contents in top glass layer(%): Die Coating(s), if used: N/A None Generic Process Technology/Design Rule (µ-drawn): Gate Oxide Material/Thickness (MOS): Name/Location of Die Fab (prime) Facility: Die Fab Line ID/Wafer Process ID: Metal 1: Ti/TiW/Al-Si/TiW, 500Å/1.2KÅ/6KÅ/1.2K Å Metal 2: TiW/Al-Si/TiW, 1.2KÅ/10KÅ/150Å CMOS, Double Poly, Double Metal /0.65 µm SiO2 / 165 Å Cypress Semiconductor - Round Rock, TX Fab2/R28 Cypress Semiconductor Low Voltage Synchronous FIFO, R28 Technology, Fab 2 Device: CY7C4245V Package: 68-pin PLCC, 64-pin TQFP QTP# 99083, V. 1.0 Page 3 of 9 March, 1999 PLASTIC PACKAGE/ASSEMBLY DESCRIPTION Package Outline, Type, or Name: 68-pin PLCC 64-pin TQFP Mold Compound Name/Manufacturer: Lead Frame material: Nitto 8000 Copper Alloy Lead Finish, composition: Solder Plated, 90%Sn, 10%Pb Die Attach Area Plating: Silver Spot Die Attach Method: Epoxy Die Attach Material: Ablestik 8361H Wire Bond Method: Thermosonic Wire Material/Size: Gold / 1.0 mil JESD22-A112 Moisture Sensitivity Level Level 3 (previously qualified) Assembly Line ID and Process ID: Alphatec, Thailand (PLCC package) Anam, Korea (STQFP package) Note: Please contact a Cypress Representative for other packages availability. Cypress Semiconductor Low Voltage Synchronous FIFO, R28 Technology, Fab 2 Device: CY7C4245V Package: 68-pin PLCC, 64-pin TQFP QTP# 99083, V. 1.0 Page 4 of 9 March, 1999 RELIABILITY TESTS PERFORMED Stress/Test Test Condition (Temp/Bias) High Temperature Operating Life Dynamic Operating Condition, Vcc = 3.8V, 150°C Early Failure Rate Cypress Spec 29-00020 Electrostatic Discharge Human Body Model (ESD-HBM) MIL-STD-883, Method 3015.7 Electrostatic Discharge Charge Device Model (ESD-CDM) Cypress Spec. 25-00020 Latchup Sensitivity In accordance with JEDEC 17. Cypress Spec. 01-00081 Result P/F P 2,200V 1,000V P 10V ±200 mA Cypress Semiconductor Low Voltage Synchronous FIFO, R28 Technology, Fab 2 Device: CY7C4245V Package: 68-pin PLCC, 64-pin TQFP QTP# 99083, V. 1.0 Page 5 of 9 March, 1999 RELIABILITY FAILURE RATE SUMMARY Stress/Test High Temperature Operating Life Early Failure Rate1 High Temperature Operating Life2,3 Long Term Failure Rate Device Tested/ Device Hours # Fails Activation Energy Thermal AF4 Failure Rate5 2059 Devices 1 N/A N/A 486 PPM 633,360 DHRs (97476) 0 0.7 170 9 FIT 122,500 DHRs (98302) 0 0.7 170 44 FIT 1 Production Burn-in of 96 Hrs., at 150C, 6.5V is required for the product. Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. 3 Chi-squared 60% estimations used to calculate the failure rate. 4 Thermal Acceleration Factor is calculated from the Arrhenius equation 2 E 1 1 AF = exp A - k T 2 T1 where: 5 EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Long Term Failure Rate are based on R28 Technology qualified in Fab2, QTP 97476 and 98302 Cypress Semiconductor Low Voltage Synchronous FIFO, R28 Technology, Fab 2 Device: CY7C4245V Package: 68-pin PLCC, 64-pin TQFP QTP# 99083, V. 1.0 Page 6 of 9 March, 1999 RELIABILITY TEST DATA QTP#: 99083 DEVICE ASSY-LOC FABLOT# ASSYLOT# DURATION S/S REJ ==================== ======== ======== ============== ======== ==== === STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150C, 3.8V) FAIL MODE ================================ CY7C4245V-ASC KOREA-Q 2823135 619818118 48 731 1 1 Blocked Contact CY7C4245V-ASC KOREA-Q 2823135 619818118 48 741 0 1 EOS CY7C4245V-ASC KOREA-Q 2823135 619818118 48 287 0 CY7C4245V-ASC KOREA-Q 2823135 619818118 48 300 0 --------------------------------------------------------------------------------------------------------------STRESS: ESD-CHARGE DEVICE MODEL (1000V) CY7C4245V-JC ALPHA-X 2823135 219806478L1 COMP 3 0 --------------------------------------------------------------------------------------------------------------STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015 (2200V) CY7C4245V-JC ALPHA-X 2823135 219806478L1 COMP 3 0 --------------------------------------------------------------------------------------------------------------- Cypress Semiconductor Low Voltage Synchronous FIFO, R28 Technology, Fab 2 Device: CY7C4245V Package: 68-pin PLCC, 64-pin TQFP QTP# 99083, V. 1.0 Page 7 of 9 March, 1999 DEVICE RELATED RELIABILITY TEST DATA QTP#: 974761 DEVICE ASSY-LOC FABLOT# ASSYLOT# DURATION S/S REJ ==================== ======== ======== ============== ======== ==== === STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150C, 5.75V) CY7C199-VC INDNS-O 2734322 519711442D 48 540 0 CY7C199-VC CSPI-R 2733142 619707330/7/8 48 535 0 FAIL MODE ================================ CY7C199-VC CSPI-R 2733162 619707989 48 535 0 --------------------------------------------------------------------------------------------------------------STRESS: ESD-CHARGE DEVICE MODEL CY7C199-VC INDNS-O 2734322 519711442D COMP 3 0 CY7C199-VC CSPI-R 2733142 619707330/7/8 COMP 3 0 --------------------------------------------------------------------------------------------------------------STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015 CY7C199-VC INDNS-O 2734322 519711442D COMP 3 0 CY7C199-VC CSPI-R 2736541 619708989 COMP 3 0 --------------------------------------------------------------------------------------------------------------STRESS: HI-ACCEL SATURATION TEST (140C, 5.5V), PRECOND. 168 HRS 85C/85%RH CY7C199-VC CY7C199-VC CSPI-R CSPI-R 2733142 2733142 619707330/7/8 619707330/7/8 128 256 48 48 0 0 CY7C199-VC CY7C199-VC CSPI-R CSPI-R 2733162 2733162 619707989 619707989 128 128 45 50 0 0 CY7C199-VC CY7C199-VC CSPI-R CSPI-R 2735410 2735410 619708288 619708288 128 128 45 48 0 0 CY7C199-VC CSPI-R 2736541 619708989 128 47 0 --------------------------------------------------------------------------------------------------------------STRESS: HIGH TEMPERATURE STORAGE (165C, NO BIAS) CY7C199-VC CSPI-R 2733142 619707330/7/8 336 48 0 CY7C199-VC CSPI-R 2733142 619707330/7/8 500 48 0 CY7C199-VC CSPI-R 2733142 619707330/7/8 1000 48 0 --------------------------------------------------------------------------------------------------------------STRESS: HIGH TEMP STEADY STATE LIFE TEST (150C, 5.50V) CY7C199-VC CY7C199-VC CSPI-R CSPI-R 2733142 2733142 619707330/7/8 619707330/7/8 80 168 81 81 0 0 CY7C199-VC CSPI-R 2733162 619707989 80 80 0 CY7C199-VC CSPI-R 2733162 619707989 168 80 0 --------------------------------------------------------------------------------------------------------------STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 5.75V) CY7C199-VC INDNS-O 2734322 519711442D 80 540 0 CY7C199-VC CY7C199-VC CSPI-R CSPI-R 2733142 2733142 619707330/7/8 619707330/7/8 80 500 535 533 0 0 2 EOS CY7C199-VC CSPI-R 2733162 619707989 80 527 0 CY7C199-VC CSPI-R 2733162 619707989 500 527 0 --------------------------------------------------------------------------------------------------------------STRESS: LONG LIFE VERIFICATION (150C, 5.75V) CY7C199-VC CSPI-R 2733142 619707330/7/8 1000 120 0 --------------------------------------------------------------------------------------------------------------- 1 QTP 97476, 32K x 8 SRAM, R28 Technology, Fab2 qualification. Cypress Semiconductor Low Voltage Synchronous FIFO, R28 Technology, Fab 2 Device: CY7C4245V Package: 68-pin PLCC, 64-pin TQFP QTP# 99083, V. 1.0 Page 8 of 9 March, 1999 DEVICE RELAED RELIABILITY TEST DATA QTP#: 97476 DEVICE ASSY-LOC FABLOT# ==================== ======== ======== STRESS: COLD LIFE TEST (-30C, 6.5V) ASSYLOT# ============== DURATION ======== S/S ==== REJ === FAIL MODE ================================ CY7C199-VC CSPI-R 2733142 619707330/7/8 500 45 0 --------------------------------------------------------------------------------------------------------------STRESS: READ & RECORD LIFE TEST (150C, 5.75V) CY7C199-VC CSPI-R 2733142 619707330/7/8 48 10 0 CY7C199-VC CSPI-R 2733142 619707330/7/8 80 10 0 CY7C199-VC CSPI-R 2733142 619707330/7/8 500 10 0 --------------------------------------------------------------------------------------------------------------STRESS: TC COND. C, -65 TO 150C, PRECOND. 168 HRS 85C/85%RH CY7C199-VC CY7C199-VC CSPI-R CSPI-R 2733142 2733142 619707330/7/8 619707330/7/8 300 1000 48 48 0 0 CY7C199-VC CSPI-R 2733162 619707989 300 50 0 CY7C199-VC CSPI-R 2733162 619707989 1000 50 0 --------------------------------------------------------------------------------------------------------------- Cypress Semiconductor Low Voltage Synchronous FIFO, R28 Technology, Fab 2 Device: CY7C4245V Package: 68-pin PLCC, 64-pin TQFP QTP# 99083, V. 1.0 Page 9 of 9 March, 1999 DEVICE RELAED RELIABILITY TEST DATA QTP#: 983022 DEVICE ASSY-LOC FABLOT# ASSYLOT# DURATION S/S REJ ==================== ======== ======== ============== ======== ==== === STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150C, 5.75V) CY7C0251-AC CY7C0251-AC CY7C0251-AC CY7C0251-AC KOREA-Q KOREA-Q KOREA-Q KOREA-Q 2824171 2824171 2824171 2824171 619809165 619809165 619809165 619809165 48 48 48 48 536 125 467 505 FAIL MODE ================================ 0 0 0 0 CY7C0251-AC KOREA-Q 2828426 619810549 48 509 1 1 UNKOWN --------------------------------------------------------------------------------------------------------------STRESS: ESD-CHARGE DEVICE MODEL (1000V) CY7C0251-AC KOREA-Q 2824171 619809165 COMP 3 0 --------------------------------------------------------------------------------------------------------------STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015 (2,200V) CY7C0251-AC KOREA-Q 2824171 619809165 COMP 3 0 --------------------------------------------------------------------------------------------------------------STRESS: HI-ACCEL SATURATION TEST (140C, 5.5V), PRECOND. 192 HRS 30C/60%RH CY7C0251-AC KOREA-Q 2824171 619809165 128 45 0 1 EOS --------------------------------------------------------------------------------------------------------------STRESS: HI-ACCEL SATURATION TEST (140C, 5.5V), PRECOND. DB + 72 HRS 30C/60%RH CY7C0251-AC KOREA-Q 2824171 619809165 128 47 0 --------------------------------------------------------------------------------------------------------------STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 5.75V) CY7C0251-AC CY7C0251-AC KOREA-Q KOREA-Q 2824171 2824171 619809165 619809165 80 500 125 125 0 0 CY7C0251-AC KOREA-Q 2828426 619810549 80 120 0 CY7C0251-AC KOREA-Q 2828426 619810549 500 120 0 --------------------------------------------------------------------------------------------------------------STRESS: PRESSURE COOKER TEST (121C, 100%RH) CY7C0251-AC KOREA-Q 2824171 619809165 168 47 0 --------------------------------------------------------------------------------------------------------------STRESS: TC COND. C, -65 TO 150C, PRECOND. 72 HRS 30/60%RH (MSL 5) CY7C0251-AC KOREA-Q 2824171 619809165 300 47 0 CY7C0251-AC KOREA-Q 2828426 619810548 300 50 0 CY7C0251-AC KOREA-Q 2828426 619810549 300 50 0 CY7C0251-AC KOREA-Q 2828426 619810549 1000 50 0 --------------------------------------------------------------------------------------------------------------- 2 DP SRAM, R28 Technology, qualified in Fab 2.