Document No. 001-87791 Rev. ** ECN #: 4017829 Cypress Semiconductor Product Qualification Report QTP# 054001 June 2013 USB5CR Product Family S4AD-5 Technology, Fab4 CY7C602xx CY7C63310 CY7C638xx Wireless enCoRe™ II Microcontroller enCoRe™ II Low-Speed USB Peripheral Controller CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Zhaomin Ji Principal Reliability Engineer (408) 432-7021 Mira Ben-Tzur Quality Engineering Director (408) 943-2675 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 10 Document No. 001-87791 Rev. ** ECN #: 4017829 PRODUCT QUALIFICATION HISTORY Qual Report Description of Qualification Purpose Date Comp 052004 PSoC 8C21001A Neutron Product Family on SONOS S4AD-5 Technology, Fab4 Aug 05 054001 USB5CR Product Family on S4AD-5 Technology transfer to Fab4 Oct 05 062302 USB5CR Four Mask Layer Test Mode Design Fix Jul 06 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 10 Document No. 001-87791 Rev. ** ECN #: 4017829 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Transfer USB5CR Product Family on S4AD-5 Technology to Fab4 Marketing Part #: CY7C602xx, CY7C63310, CY7C638xx Device Low Speed USB Peripheral Controller D i ti Cypress Division: Cypress Semiconductor Corporation – Consumer and Computation Division Overall Die (or Mask) REV Level (pre-requisite for qualification): What ID markings on Die: Rev. A 7C6380A TECHNOLOGY/FAB PROCESS DESCRIPTION S4AD-5 Number of Metal Layers: Metal 1: 500A TiW/6,000A AlCu (0.5%)/300A TiW Metal Composition: Metal 2: 500A TiW/8,000A AlCu (0.5%)/300A TiW 2 Passivation Type and Materials: 7,000A TeOs / 6,000A Si3N4 Free Phosphorus contents in top glass layer (%): 0% Number of Transistors in Device: 279,000 Number of Gates in Device 13,000 Generic Process Technology/Design Rule ( drawn): Single Poly, Double Metal, 0.35 m Gate Oxide Material/Thickness (MOS): SiO2 / 100A Name/Location of Die Fab (prime) Facility: Cypress Semiconductor - Minnesota Die Fab Line ID/Wafer Process ID: Fab 4, S4AD-5 CMI, SONOS PACKAGE AVAILABILITY PACKAGE ASSEMBLY SITE FACILITY TEST SITE FACILITY 1618/24-Lead SOIC CML-RA, PHIL-M, CHINA-JT CML-R, CML-RA 16/18/24-Pin PDIP CML-RA, PHIL-M CML-R, CML-RA, TAIWN-KY 24-Lead QSOP CHINA-JT TAIWN-KY 32-Lead QFN CML-RA, KOREA-L, TAIWAN-G CMLR, CML-RA, TAIWN-KY Note: Package Qualification details upon request. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 10 Document No. 001-87791 Rev. ** ECN #: 4017829 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT Stress/Test Test Condition (Temp/Bias) High Temperature Operating Life Early Failure Rate High Temperature Operating Life Latent Failure Rate High Accelerated Saturation Test (HAST) Temperature Cycle Dynamic Operating Condition, Vcc Max=5.5V, 1250C P Dynamic Operating Condition, Vcc Max=5.5V, 1250C P 1300C ,5.25V, 85%RH Precondition: JESD22 Moisture Sensitivity Level 1 168 Hrs, 85C/85%RH, 260°C+0, -5°C Reflow MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C Precondition: JESD22 Moisture Sensitivity Level 1 168 Hrs, 85C/85%RH, 260°C+0, -5°C Reflow 1210C, 100%RH, 15 Psig Precondition: JESD22 Moisture Sensitivity Level 1 Pressure Cooker Result P/F P P P 168 Hrs, 85C/85%RH, 260°C+0, -5°C Reflow Data Retention 1500C , No Bias P High Temperature Steady State life 1250C , 5.5V, Vcc Max P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V JESD22, Method A114-B P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V MIL-STD-883, Method 3015.7 P Electrostatic Discharge Charge Device Model (ESD-CDM) 500V, JESD22-C101C Endurance Test MIL-STD-883, Method 883-1033 P Age Bond Strength 200C, 4hrs MIL-STD-883, Method 883-2011 P Current Density Meet requirements P Low Temperature Operating Life -30C, 5.5V, 8MHZ P SEM Analysis MIL-STD-883, Method 883-2018-2 P Acoustic Microscopy J-STD-020 Precondition: JESD22 Moisture Sensitivity Level P P 168 Hrs, 85C/85%RH, 260°C+0, -5°C Reflow Dynamic Latch up 125C, 8.3V P Latch up Sensitivity 125C, ± 200mA P JEDEC 17,JESD78A RELIABILITY FAILURE RATE SUMMARY Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 10 Document No. 001-87791 Rev. ** ECN #: 4017829 Stress/Test Device Tested/ Device Hours # Fails Activation Energy Thermal3 A.F Failure Rate High Temperature Operating Life Early Failure Rate1 3,006 Devices 0 N/A N/A 0 PPM High Temperature Operating Life1, 2 Long Term Failure Rate 528,750 DHRs 0 0 .7 55 31 FIT 1 Assuming an ambient temperature of 55 C and a junction temperature rise of 15 C. 2 Chi-squared 60% estimations used to calculate the failure rate. 3 Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 Where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 10 Document No. 001-87791 Rev. ** ECN #: 4017829 Reliability Test Data QTP #: Device STRESS: Fab Lot # 052004 Assy Lot # Assy Loc Duration Samp Rej CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T COMP 15 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M COMP 15 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M COMP 15 0 STRESS: AGE BOND STRENGTH CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T COMP 10 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M COMP 10 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M COMP 10 0 STRESS: DATA RETENTION, PLASTIC, 150C CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 500 256 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 1000 256 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 500 256 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 1000 254 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 500 252 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 1000 252 0 4516647 610521157 TAIWN-T COMP 45 0 STRESS: ENDURANCE CY8C21534 (8C21534A) STRESS: ESD-CHARGE DEVICE MODEL, (500V) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T COMP 9 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWN-T COMP 9 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWN-T COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T COMP 9 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWN-T COMP 9 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWN-T COMP 9 0 STRESS: Failure Mechanism ACOUSTIC, MSL1 ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, (2,200V) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T COMP 3 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWN-T COMP 3 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWN-T COMP 3 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 10 Document No. 001-87791 Rev. ** ECN #: 4017829 Reliability Test Data QTP #: Device STRESS: Fab Lot # Assy Lot # 052004 Assy Loc Duration Samp Rej HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 5.5V, Vcc Max) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 120 1002 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 120 1002 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 120 1002 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 5.5V, Vcc Max) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 750 235 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWN-T 750 235 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWN-T 750 235 0 STRESS: HIGH TEMP STEADY STATE LIFE TEST (125C, 5.5V) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 168 76 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 336 76 0 STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 5.25V), PRE COND 168 HR 85C/85%RH, MSL1 CY8C21234 (8C21234A) 4516647 610527569 PHIL-M 128 49 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 128 44 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 128 44 0 500 45 0 STRESS: LOW TEMPERATURE OPERATING LIFE (-30C, 5.5V) CY8C21534 (8C21534A) STRESS: 4516647 610521157 TAIWN-T PRESSURE COOKER TEST (121C, 100%RH), PRE COND 168 HR 85C/85%RH, MSL1 CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 168 45 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 336 45 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 168 45 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 336 45 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 168 45 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 336 45 0 STRESS: STATIC LATCH-UP TESTING (125C, 11V, 300mA) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T COMP 3 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWN-T COMP 3 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWN-T COMP 3 0 610521157 TAIWN-T COMP 3 0 STRESS: Failure Mechanism DYNAMIC LATCH-UP (8.3V) CY8C21534 (8C21534A) 4516647 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 10 Document No. 001-87791 Rev. ** ECN #: 4017829 Reliability Test Data QTP #: Device STRESS: Fab Lot # Assy Lot # 052004 Assy Loc Duration Samp Rej Failure Mechanism TC COND. C -65C TO 150C, PRE COND 168 HRS 85C/85%RH, MSL1 CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 300 50 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 500 50 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 1000 50 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 300 45 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 1000 45 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 300 45 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 10 Document No. 001-87791 Rev. ** ECN #: 4017829 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # 054001 Assy Loc Duration Samp Rej Failure Mechanism STRESS: E-TEST DATA 7C6830AC 7C6830AC 7C6830AC 4526487 4527976 4528157 COMPARABLE COMPARABLE COMPARABLE 4526487 4527976 4528157 COMPARABLE COMPARABLE COMPARABLE STRESS: SORT YIELD 7C6830AC 7C6830AC 7C6830AC Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 10 Document No. 001-87791 Rev. ** ECN #: 4017829 Document History Page Document Title: QTP # 054001 : USB5CR PRODUCT FAMILY (CY7C63310/638XX, CY7C602XX ) S4AD-5 TECHNOLOGY , FAB 4 Document Number: 001-87791 Rev. ECN Orig. of No. Change ** 4017829 ILZ Description of Change Initial Spec Release Qualification report published on Cypress.com is documented on memo LGQ-553 and not in spec format. Initiated spec for QTP 054001 and data from LGQ-554 was transferred to qualification report spec template. Updated package availability based on current qualified test & assembly site. Deleted Cypress reference Spec and replaced with Industry Standards. Added 054001 Reliability test data Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 10