Document No. 001-87792 Rev. ** ECN #: 4017829 Cypress Semiconductor Product Qualification Report QTP# 065001 June 2013 USB5CR Product Family S4AD-5 Technology, FAB 5 CY7C602xx Wireless enCoRe™ II Microcontroller CY7C63310 CY7C638xx enCoRe™ II Low-Speed USB Peripheral Controller CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Zhaomin Ji Principal Reliability Engineer (408) 432-7021 Mira Ben-Tzur Quality Engineering Director (408) 943-2675 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 11 Document No. 001-87792 Rev. ** ECN #: 4017829 PRODUCT QUALIFICATION HISTORY Qual Report Description of Qualification Purpose Date Comp 060605 Qualify GSMC using PSoC Device Product Family on S4AD-5 Technology Aug 06 065001 USB5CR Product Family on S4AD-5 Technology transfer to GSMC Apr 07 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 11 Document No. 001-87792 Rev. ** ECN #: 4017829 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Transfer USB5CR Product Family on S4AD-5 Technology to GSMC Marketing Part #: CY7C602xx, CY7C63310, CY7C638xx Device Low Speed USB Peripheral Controller D i ti Cypress Division: Cypress Semiconductor Corporation – Consumer and Computation Division TECHNOLOGY/FAB PROCESS DESCRIPTION Number of Metal Layers: 2 Metal Metal 1: 250A TiN/5,800A Al/700A TiN Composition: Metal 2: 500A TiN/8,000A Al/250A TiN Passivation Type and Materials: 7,000A TeOs / 6,000A Si3N4 Generic Process Technology/Design Rule ( drawn): Single Poly, Double Metal, 0.35 m Gate Oxide Material/Thickness (MOS): SiO2 / 100A Name/Location of Die Fab (prime) Facility: Grace Semiconductor Manufacturing / Shanghai, China Die Fab Line ID/Wafer Process ID: Fab 5 / S4AD-5 PACKAGE AVAILABILITY PACKAGE ASSEMBLY SITE FACILITY TEST SITE FACILITY 1618/24-Lead SOIC CML-RA, PHIL-M, CHINA-JT CML-RA, TAIWN-KY 16/18/24-Pin PDIP CML-RA, PHIL-M, CHINA-JT TAIWN-KY 24-Lead QSOP CHINA-JT TAIWN-KY 32-Lead QFN CML-RA, KOREA-L,TAIWAN-G CML-RA, TAIWN-KY Note: Package Qualification details upon request. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 11 Document No. 001-87792 Rev. ** ECN #: 4017829 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT Stress/Test High Temperature Operating Life Early Failure Rate High Temperature Operating Life Latent Failure Rate Test Condition (Temp/Bias) 0 Dynamic Operating Condition, Vcc Max=5.5V, 125 C 0 Dynamic Operating Condition, Vcc Max=5.5V, 125 C Result P/F P P High Temperature Steady State life 1250C, 5.5V, Vcc Max P Low Temperature Operating Life -30C, 5.5V P 0 High Accelerated Saturation Test (HAST) 130 C, 5.25V, 85%RH Precondition: JESD22 Moisture Sensitivity Level 1 168 Hrs, 85C/85%RH, 260°C+0, -5°C Reflow P Temperature Cycle MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C Precondition: JESD22 Moisture Sensitivity Level 1 168 Hrs, 85C/85%RH, 260°C+0, -5°C Reflow P Pressure Cooker 121 C, 100%RH, 15 Psig Precondition: JESD22 Moisture Sensitivity Level 1 0 P 168 Hrs, 85C/85%RH, 260°C+0, -5°C Reflow Acoustic Microscopy J-STD-020 Precondition: JESD22 Moisture Sensitivity Level 168 Hrs, 85C/85%RH, 260°C+0, -5°C Reflow P Age Bond Strength 200C, 4hrs MIL-STD-883, Method 883-2011 P Data Retention 1500C, No Bias P Dynamic Latch-up 125C, 8.5V P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V JESD22, Method A114-B P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V MIL-STD-883, Method 3015.7 P Electrostatic Discharge Charge Device Model (ESD-CDM) 500V, JESD22-C101C Endurance Test MIL-STD-883, Method 883-1033 P Static Latch-up 125C, ± 200mA JESD78A,JESD78A P Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 11 P Document No. 001-87792 Rev. ** ECN #: 4017829 RELIABILITY FAILURE RATE SUMMARY Stress/Test Device Tested/ Device Hours # Fails Activation Energy Thermal3 A.F Failure Rate High Temperature Operating Life Early Failure Rate1 3,057 Devices 1 N/A N/A 327 PPM High Temperature Operating Life1, 2 Long Term Failure Rate 720,000DHRs 0 0 .7 55 23 FIT 1 2 3 Assuming an ambient temperature of 55C and a junction temperature rise of 15C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 Where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 11 Document No. 001-87792 Rev. ** ECN #: 4017829 Reliability Test Data QTP #: 060605 Device STRESS: Fab Lot # Assy Lot # Assy Loc Duration Samp Rej ACOUSTIC, MSL1 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M COMP 15 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M COMP 15 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M COMP 15 0 STRESS: AGE BOND STRENGTH CY8C24494 (8C24494A) 9621713 610632687 PHIL-M COMP 10 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M COMP 10 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M COMP 10 0 STRESS: DATA RETENTION, PLASTIC, 150C CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 336 256 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 1000 256 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 1500 256 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 336 256 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 1000 256 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 336 256 0 9621713 610632687A PHIL-M COMP 47 0 STRESS: ENDURANCE CY8C24494 (8C24494A) STRESS: ESD-CHARGE DEVICE MODEL, (500V) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M COMP 9 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M COMP 9 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M COMP 9 0 CY8C24494 (8C24494A) 9623715 610635880 PHIL-M COMP 9 0 CY8C24494 (8C24795A) 9623716 610639349 SEOL-L COMP 9 0 CY8C24494 (8C24995A) 9623716 610639350 SEOL-L COMP 9 0 STRESS: Failure Mechanism ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M COMP 9 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M COMP 9 0 CY8C24494 (8C24494A) 9623715 610635880 PHIL-M COMP 9 0 CY8C24494 (8C24995A) 9623716 610639350 SEOL-L COMP 9 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 11 Document No. 001-87792 Rev. ** ECN #: 4017829 Reliability Test Data QTP #: 060605 Device STRESS: Fab Lot # Assy Lot # Assy Loc Duration Samp Rej ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, (2,200V) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M COMP 3 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M COMP 3 0 CY8C24494 (8C24494A) 9623715 610635880 PHIL-M COMP 3 0 CY8C24494 (8C24995A) 9623716 610639350 SEOL-L COMP 3 0 COMP 3 0 3 0 STRESS: STATIC LATCH-UP TESTING (125C, 8.5V, +/-200mA) CY8C24494 (8C24494A) 9623716 CY8C24494 (8C24994A) 9621713 CY8C24494 (8C24494A) 9623715 610638054 SEOL-L COMP 3 0 CY8C24494 (8C24995A) 9623716 610639350 SEOL-L COMP 3 0 PHIL-M COMP 2 0 STRESS: 610639767 PHIL-M C-USA COMP DYNAMIC LATCH-UP (125C, 8.5V) CY8C24494 (8C24494A) STRESS: 9621713 610632687 HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 5.5V, Vcc Max) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 96 1005 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 96 1144 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 96 908 1 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 5.5V, Vcc Max) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 168 180 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 1000 1800 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 168 180 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 1000 180 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 168 180 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 1000 180 0 CY8C24494 (8C24494A) 9623716 610639767A PHIL-M 1000 180 0 STRESS: 0 HIGH TEMP STEADY STATE LIFE TEST (125C, 5.5V) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 168 80 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 336 80 0 45 0 STRESS: Failure Mechanism LOW TEMPERATURE DYNAMIC OPERATING LIFE, -30C, 5.5V CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 500 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 11 CAPACITOR DEFECT Document No. 001-87792 Rev. ** ECN #: 4017829 Reliability Test Data QTP #: 060605 Device STRESS: Fab Lot # Assy Lot # Assy Loc Duration Samp Rej CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 128 49 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 128 49 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 128 49 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 168 HR 85C/85%RH (MSL1) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 168 50 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 288 50 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 500 47 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 168 50 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 168 50 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 288 50 0 STRESS: Failure Mechanism HI-ACCEL SATURATION TEST (130C, 85%RH, 5.25V), PRE COND 168 HR 85C/85%RH (MSL1) TC COND. C -65C TO 150C, PRE COND 168 HRS 85C/85%RH (MSL1) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 300 50 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 500 50 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 1000 50 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 300 50 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 500 49 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 1000 49 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 300 50 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 500 49 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 11 Document No. 001-87792 Rev. ** ECN #: 4017829 Reliability Test Data QTP #: 065001 Device STRESS: Fab Lot # Assy Lot # Assy Loc Duration Samp Rej DATA RETENTION, PLASTIC, 150C CY7C63813 (7C63811BK) 9651744 510700277 INDNS-O 500 77 0 CY7C63813 (7C63811BK) 9651744 510700277 INDNS-O 1000 77 0 168 88 0 STRESS: ENDURANCE (25C, 1000 Cycles, Bake 150C, 168hrs) CY7C63813 (7C63811BK) STRESS: 9651744 510700277 INDNS-O HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 5.5V, Vcc Max) CY7C63813 (7C63811BK) 9651744 510700277 INDNS-O 96 789 0 CY7C63813 (7C63811BK) 9651744 510700277 INDNS-O 96 403 0 INDNS-O COMP 9 0 8 0 STRESS: ESD-CHARGE DEVICE MODEL, (500V) CY7C63813 (7C63811BK) STRESS: 9651744 510700277 ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V) CY7C63813 (7C63811BK) STRESS: 9651744 510700277 INDNS-O COMP HI-ACCEL SATURATION TEST (130C, 85%RH, 5.25V), PRE COND 40 Temp Cycles CY7C63813 (7C63811BK) 9651744 510700277 INDNS-O 128 46 0 CY7C63813 (7C63811BK) 9651744 510700276 INDNS-O 128 46 0 CY7C63813 (7C63811BK) 9651744 510700275 INDNS-O 128 46 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 5.5V, Vcc Max) CY7C63813 (7C63811BK) STRESS: 9651744 510700277 INDNS-O 168 196 0 PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 40 Temp Cycles CY7C63813 (7C63811BK) 9651744 510700277 INDNS-O 168 46 0 CY7C63813 (7C63811BK) 9651744 510700276 INDNS-O 128 46 0 CY7C63813 (7C63811BK) 9651744 510700275 INDNS-O 128 45 0 STRESS: STATIC LATCH-UP TESTING (125C, 8.5V, +/-200mA) CY7C63813 (7C63811BK) STRESS: Failure Mechanism 9651744 510700277 INDNS-O COMP 3 0 INTERNAL VISUAL CY7C63813 (7C63811BK) 9651744 510700277 INDNS-O COMP 5 0 CY7C63813 (7C63811BK) 9651744 510700276 INDNS-O COMP 5 0 CY7C63813 (7C63811BK) 9651744 510700275 INDNS-O COMP 5 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 11 Document No. 001-87792 Rev. ** ECN #: 4017829 Reliability Test Data QTP #: 065001 Device STRESS: Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism TC COND. C -65C TO 150C, PRE COND 40 Temp Cycles CY7C63813 (7C63811BK) 9651744 510700277 INDNS-O 300 46 0 CY7C63813 (7C63811BK) 9651744 510700277 INDNS-O 500 43 0 CY7C63813 (7C63811BK) 9651744 510700276 INDNS-O 300 46 0 CY7C63813 (7C63811BK) 9651744 510700276 INDNS-O 500 46 0 CY7C63813 (7C63811BK) 9651744 510700275 INDNS-O 300 46 0 CY7C63813 (7C63811BK) 9651744 510700275 INDNS-O 500 46 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 11 Document No. 001-87792 Rev. ** ECN #: 4017829 Document History Page Document Title: QTP 065001 : USB5CR PRODUCT FAMILY, (CY7C602XX/CY7C63310/CY7C638XX), S4AD-5 TECHNOLOGY, FAB 5 Document Number: 001-87792 Rev. ECN Orig. of No. Change ** 4017829 ILZ Description of Change Initial Spec Release Qualification report published on Cypress.com is documented on memo LGQ-721 n spec format. Initiated spec for QTP 065001 data from LGQ-721 was transferred to qualification report spec template. Deleted Cypress reference Spec and replaced with Industry Standards Updated package availability based on current qualified test & assembly site Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 11