Document No.001-88008 Rev. *A ECN # 4417735 Cypress Semiconductor Product Qualification Report QTP# 062201 VERSION*A June, 2014 MoBL ADM DUAL PORT STATIC RAM FAMILY R52LD-3 TECHNOLOGY, FAB4 CYDMX256A16 CYDMX128A16 CYDMX064A16 4K/8K/16K x 16 MoBL® ADM Asynchronous Dual–Port Static RAM FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT [email protected] or via a CYLINK CRM CASE Prepared By: Josephine Pineda Reliability Engineer Reviewed By: Zhaomin Ji Reliability Manager Approved By: Richard Oshiro Reliability Director Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 11 Document No.001-88008 Rev. *A ECN # 4417735 PRODUCT QUALIFICATION HISTORY QUAL REPORT DESCRIPTION OF QUALIFICATION PURPOSE DATE COMP. 99075 New Technology R52LD-3 / New Slow Low Power MoBL SRAM, CY62137V Apr 99 052103 Qualify 256K Dual Port (Split Voltage) Device Family, R52LD3 Technology from Fab4 Nov 05 062201 Qualification of Device 7C02638A (MoBL ADM Dual Port) in R52LD-3 Technology at Fab 4 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 11 Sep 06 Document No.001-88008 Rev. *A ECN # 4417735 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: To qualify 3 rd Generation MoBL DP ADM on existing package and qualified technology, R52LD-3. Marketing Part #: CYDMX256A16, CYDMX128A08, CYDMX064A16 Device Description: 1.8/2.5/3V 256K/128K/64K (16K/8K/4K x 16) MoBL ADMux Dual port Cypress Division: Cypress Semiconductor Corporation – Data Communication Division Overall Die (or Mask) REV: Rev. A What ID markings on Die: 7C02638A TECHNOLOGY/FAB PROCESS DESCRIPTION – R52LD3 Number of Metal Layers: 2 Metal Composition: Metal 1: 500 Å-TiW/6000 Å Al-Cu/500 Å TiW Metal 2: 300 Å-Ti/8000 Å Al-Cu/300 Å TiW Passivation Type and Materials: 1,000A TEOS + 9,000A SiN Free Phosphorus contents in top glass layer (%): 0% Die Coating(s), if used: N/A Number of Transistors in Device: 2932342 Number of Gates in Device: 733086 Generic Process Technology/Design Rule ( µ-drawn): R52 TDR (01-30065), 0.25um Technology Gate Oxide Material/Thickness (MOS): 55Å Name/Location of Die Fab (prime) Facility: Cypress Semiconductor – Bloomington Minnesota Die Fab Line ID/Wafer Process ID: 7C02638A PACKAGE AVAILABILITY PACKAGE 100-Ball VFBGA ASSEMBLY FACILITY SITE ASE Taiwan (TAIWN-G), CML-RA Note: Package Qualification details upon request. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 11 Document No.001-88008 Rev. *A ECN # 4417735 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: Mold Compound Flammability Rating: BZ100 100-Ball, Very Fine Ball Grid Array (VFBGA) KE-G2270 V-O per UL94 Oxygen Rating Index: N/A Substrate Material: CCL-HL832NX Lead Finish, Composition / Thickness: SnAgCu Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: 100% Die Attach Supplier: Ablestik Die Attach Material: 2025D Die Attach Method: Epoxy Bond Diagram Designation: 001-08055 Wire Bond Method: Thermosonic Wire Material/Size: Au, 0.8mil Thermal Resistance Theta JA and JC °C/W: 44.21 , 19 Package Cross Section Yes/No: N/A Assembly Process Flow: 001-06964 Name/Location of Assembly (prime) facility: ASE Taiwan (TAIWN-G) ELECTRICAL TEST / FINISH DESCRIPTION Test Location: CML-R Fault Coverage: 100% Note: Please contact a Cypress Representative for other packages availability. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 11 Document No.001-88008 Rev. *A ECN # 4417735 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS Stress/Test Test Condition (Temp/Bias) Alpha Particle Emission Result P/F P Data Retention (Hermetic) 0.001 CPH/Cm2 250°C, non-biased Data Retention (Plastic) 150°C, non-biased P Electrostatic Discharge Charge Device Model (ESD-CDM) 500V JESD22-C101 P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V JEDEC EIA/JESD22-A114 P High Accelerated Saturation Test (HAST) JEDEC STD 22-A110: 140°C, 3.63V, 85%RH P Precondition: JESD22 Moisture Sensitivity Level (192 Hrs., 30°C, 60% RH, 260°C Reflow) Dynamic Operating Condition, Vcc Max=3.45V, 125°C Dynamic Operating Condition, Vcc Max=3.45V, 150°C Dynamic Operating Condition, Vcc Max=3.8V, 150°C JESD22-A108 P High Temperature Operating Life Early Failure Rate P High Temperature Operating Life Latent Failure Rate Dynamic Operating Condition, Vcc Max=3.45V, 125°C Dynamic Operating Condition, Vcc Max=3.45V, 150°C Dynamic Operating Condition, Vcc Max=3.8V, 150°C JESD22-A108 P High Temperature Steady State Life Static Operating Condition, Vcc Max = 3.63V, 150°C JESD22-A108 JESD22-A103:165°C, no bias P Long Life Verification Dynamic Operating Condition, Vcc Max = 3.8V, 150°C JESD22-A108 P Low Temperature Operating Life Dynamic Operating Condition, Vcc = 3.8V, -30°C, f = 8 MHz JESD22-A108 P Pressure Cooker JESD22-A102, 121°C, 100%RH, 15 PSIG Precondition: JESD22 Moisture Sensitivity Level (192 Hrs., 30°C, 60% RH, 260C Reflow) 125C, ± 200mA P High Temperature Storage Static Latch-up P P In accordance with JEDEC 17 Temperature Cycle Thermal Series MIL-STD-883, Method 1010, Condition C, -65°C to 150°C Precondition: JESD22 Moisture Sensitivity Level (192 Hrs., 30°C, 60% RH, 260C Reflow) MIL-STD-883-5005, D3 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 11 P P Document No.001-88008 Rev. *A ECN # 4417735 RELIABILITY FAILURE RATE SUMMARY Stress/Test Device Tested/ Device Hours High Temperature Operating Life Early Failure Rate High Temperature Operating Life1,2 Long Term Failure Rate . Activation Energy Acceleration Factor3 Failure Rate 1078 Devices # Fail s 0 N/A N/A 0 PPM 400,500 HRs 1 0.7 170 30 FITs 1 Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. Chi-squared 60% estimations used to calculate the failure rate. 3 Thermal Acceleration Factor is calculated from the Arrhenius equation 2 E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 11 Document No.001-88008 Rev. *A ECN # 4417735 Reliability Test Data QTP #: 99075 Device STRESS: Fab Lot # Assy Lot # Assy Loc Duration Samp Rej ESD-CHARGE DEVICE MODEL, 500V CY62137V-ZSIB 4852210 619903364 CSPI-R COMP 3 0 CY62137V-ZSIB 4851023 619907600 CSPI-R COMP 3 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150C, 3.8V, >Vcc Max) CY62137V-ZSIB 4852210 619903364 CSPI-R 48 1505 0 CY62137V-ZSIB 4902501 619905577 CSPI-R 48 1504 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 3.8V, >Vcc Max) CY62137V-ZSIB 4852210 619903364 CSPI-R 80 405 0 CY62137V-ZSIB 4852210 619903364 CSPI-R 500 405 1 CY62137V-ZSIB 4902501 619905577 CSPI-R 80 396 0 CY62137V-ZSIB 4902501 619905577 CSPI-R 500 396 0 1000 404 0 STRESS: 4852210 619903364 CSPI-R HIGH TEMP DYNAMIC STEADY STATE LIFE TEST, (150C, 3.63V, >Vcc Max) CY62137V-ZSIB 4852210 619903364 CSPI-R 80 80 0 CY62137V-ZSIB 4852210 619903364 CSPI-R 168 80 0 45 0 STRESS: LOW TEMPERATURE OPERATING LIFE, (-30C, 3.8V, 8 MHZ) CY62137V-ZSIB STRESS: 4852210 619903364 CSPI-R 500 ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 2,200V CY62137V-ZSIB 4852210 619903364 CSPI-R COMP 3 0 CY62137V-ZSIB 4851023 619907600 CSPI-R COMP 3 0 STRESS: HIGH TEMPERATURE STORAGE, 165C, no bias CY62137V-ZSIB 4852210 619903364 CSPI-R 336 47 0 CY62137V-ZSIB 4852210 619903364 CSPI-R 1000 47 0 CY62137V-ZSIB 4902501 619905577 CSPI-R 336 48 0 STRESS: UNKNOWN LONG LIFE VERIFICATION, (150C, 3.8V, >Vcc Max) CY62137V-ZSIB STRESS: Failure Mechanism TC CONDITION C, -65C TO 150C, PRE COND 192 HRS 30C/60% RH, MSL3 CY62137V-ZSIB 4852210 619903364 CSPI-R 300 48 0 CY62137V-ZSIB 4852210 619903364 CSPI-R 1000 48 0 CY62137V-ZSIB 4902501 619905577 CSPI-R 300 48 0 CY62137V-ZSIB 4902501 619905577 CSPI-R 1000 48 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 11 Document No.001-88008 Rev. *A ECN # 4417735 Reliability Test Data QTP #: 99075 Device STRESS: Fab Lot # Assy Loc Duration Samp Rej Failure Mechanism PRESSURE COOKER TEST (121C, 100%RH), PRE COND 192HRS 30C/60%RH, MSL3 CY62137V-ZSIB STRESS: Assy Lot # 4852210 619903364 CSPI-R 168 48 0 HI-ACCEL SATURATION TEST, (140C, 3.63V), 85%RH, PRE COND 192 HR 30C/60%RH, MSL3 CY62137V-ZSIB 4852210 619903364 CSPI-R 128 48 0 CY62137V-ZSIB 4852210 619903364 CSPI-R 256 48 0 CY62137V-ZSIB 4902501 619905577 CSPI-R 128 48 0 CY62137V-ZSIB 4902501 619905577 CSPI-R 256 48 0 CY62137V-ZSIB 4903568 619907944 CSPI-R 128 48 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 11 Document No.001-88008 Rev. *A ECN # 4417735 Reliability Test Data QTP #: 052103 Device STRESS: Fab Lot # Assy Lot # Assy Loc Duration Samp Rej HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 150C, 3.45V, Vcc Max CYDC256B16 (7C02628A) 4531145 610540035 TAIWN-G 48 330 0 CYDC256B16 (7C02628A) 4531145 610540036 TAIWN-G 48 328 0 CYDC256B16 (7C02628A) 4531145 610540037 TAIWN-G 48 332 0 STRESS: ESD-CHARGE DEVICE MODEL, 500V CYDM256B16 (7C02628A) 4531145 610539449 TAIWN-G COMP 9 0 CYDC256B16 (7C02628A) 4531145 610540035/6/7 TAIWN-G COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 2,200V CYDM256B16 (7C02628A) 4531145 610539449 TAIWN-G COMP 9 0 CYDC256B16 (7C02628A) 4531145 610540035/6/7 TAIWN-G COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,200V CYDM256B16 (7C02628A) 4531145 610539449 TAIWN-G COMP 3 0 CYDC256B16 (7C02628A) 4531145 610540035/6/7 TAIWN-G COMP 3 0 TAIWN-G COMP 3 0 168 50 0 STRESS: Failure Mechanism STATIC LATCH-UP TESTING (125C, 7.0V, +/-300mA) CYDM256B16 (7C02628A) 4531145 610539449 STRESS: PRESSURE COOKER TEST, 121C, 100%RH, PRE COND 192 HR 30C/60%RH, MSL3 CYDM256A16 (7C02618A) STRESS: 4503160 610510254 TAIWN-G TC COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH, MSL3 CYDM256A16 (7C02618A) 4503160 610510254 TAIWN-G 300 50 0 CYDM256A16 (7C02618A) 4503160 610510254 TAIWN-G 500 50 0 CYDM256A16 (7C02618A) 4503160 610510254 TAIWN-G 1000 50 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 11 Document No.001-88008 Rev. *A ECN # 4417735 Reliability Test Data QTP #: 062201 Device STRESS: Fab Lot # Assy Loc 610543349 TAIWN-G Duration Samp Rej 4522569 COMP 5 0 HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 150C, 3.45V, Vcc Max CYDCX256A16 (7C02638A) 4622252 610647256 CML-R 48 485 0 CYDCX256A16 (7C02638A) 4622252 610647257 CML-R 48 400 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 3.45V, Vcc Max CYDMX256A16 (7C02638A) STRESS: TAIWN-G 96 193 0 4622252 610646577 TAIWN-G COMP 9 0 4622252 COMP 9 0 TAIWN-G COMP 3 0 TAIWN-G COMP 3 0 168 50 0 610646577 TAIWN-G ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,200V CYDMX256A16 (7C02638A) STRESS: 610646577 ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 2,200V CYDMX256A16 (7C02638A) STRESS: 4622252 ESD-CHARGE DEVICE MODEL, 500V CYDMX256A16 (7C02638A) STRESS: Failure Mechanism ALPHA PARTICLE EMISSION CYDC256B16 (7C02628A) STRESS: Assy Lot # 4622252 610646577 STATIC LATCH-UP TESTING (125C, 5.4V, +/-200mA) CYDMX256A16 (7C02638A) 4622252 610646577 STRESS: PRESSURE COOKER TEST, 121C, 100%RH, PRE COND 192 HR 30C/60%RH, MSL3 CYDM256A16 (7C02618A) STRESS: 4503160 610510254 TAIWN-G TC COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH, MSL3 CYDM256A16 (7C02618A) 4503160 610510254 TAIWN-G 300 50 0 CYDM256A16 (7C02618A) 4503160 610510254 TAIWN-G 500 50 0 CYDM256A16 (7C02618A) 4503160 610510254 TAIWN-G 1000 50 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 11 Document No.001-88008 Rev. *A ECN # 4417735 Document History Page Document Title: QTP # 062201 : MoBL ADM DUAL-PORT RAM, (CYDMX064/128/256xxx Product Family ), R52LD-3 TECHNOLOGY, FAB 4 Document Number: 001-88008 Rev. ECN Orig. of No. Change ** 4033621 ILZ *A 4417735 JYF Description of Change Initial Spec Release Qualification report published on Cypress.com is documented on memo HGA-168 and not in spec format. Initiated spec for QTP 062201 and all data from memo# HGA-168 was transferred to qualification report spec template. Deleted package qualification details on package qualification history table. Deleted Cypress reference Spec and replaced with Industry Standards Updated package availability based on current qualified test & assembly site. Sunset review: Updated QTP title page and Reliability Tests Performed table (ESD-HBM, HAST, EFR/LFR, HTSSL, HTS, LLV, LTOL, PCT) for template alignment. Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 11