Document No. 001-92452 Rev. ** ECN #:4376541 Cypress Semiconductor Product Qualification Report QTP# 134704 VERSION** May, 2014 Wireless USB Family CYRF9935 0.18um, TSMC WirelessUSB™ NX 2.4 GHz Low Power Radio FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT [email protected] or via a CYLINK CRM CASE Prepared By: Josephine Pineda Reliability Engineer Reviewed By: Rene Rodgers Reliability Manager Approved By: Richard Oshiro Reliability Director Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 12 Document No. 001-92452 Rev. ** ECN #:4376541 PACKAGE/PRODUCT QUALIFICATION HISTORY QTP Number 104609 134704 Description of Qualification Purpose Qualification of WUSB NL New Product (7C8935A) on CM018G Derivative Process in TSMC Fab8 WUSB-NX Device (7C99351A) Qualification at TSMC using CM018G Technology Company Confidential A printed copy of this document is considered uncontrolled. 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Page 2 of 12 Date Sep 2011 May 2014 Document No. 001-92452 Rev. ** ECN #:4376541 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Qualify WUSB-NX Device (7C99351A) at TSMC using CM018G Technology Marketing Part #: CYRF9935-24LQXC Device Description: WirelessUSB™ NX 2.4 GHz Low Power Radio Cypress Semiconductor Corporation – Data Communications Division (DCD) Cypress Division: TECHNOLOGY/FAB PROCESS DESCRIPTION Number of Metal Layers: 4 Metal Composition: Metal 1: 250Å TiN / 4000AlCu / 250Å TiN Metal 2 :250Å TiN / 4000AlCu / 250Å TiN Metal 3 :250Å TiN / 4000AlCu / 250Å TiN Metal 4: 500Å TiN / 20000AlCu / 250Å TiN Generic Process Technology/Design Rule (µ-drawn): 0.18u / T-018-LO-DR-001 Gate Oxide Material/Thickness (MOS): Thermal oxide / 40.8A for 1.8V Dev, 68A for 3.3V Dev Name/Location of Die Fab (prime) Facility: TSMC – Taiwan Fab8 Die Fab Line ID/Wafer Process ID: CM018G PACKAGE AVAILABILITY PACKAGE WIRE MATERIAL ASSEMBLY FACILITY SITE QTP NUMBER 24 QFN CuPd ASE-Taiwan (G) QTP#134802 Note: Package Qualification details upon request. 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Page 3 of 12 Document No. 001-92452 Rev. ** ECN #:4376541 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: LQ24A Package Outline, Type, or Name: Quad Flat No Lead (QFN) (4x4x0.6mm) Mold Compound Name/Manufacturer: EME-G700LA/Sumitomo Mold Compound Flammability Rating: UL-94 V-0 Mold Compound Alpha Emission Rate: <0.1 Oxygen Rating Index: >28% 54% Lead Frame Designation: FMP Lead Frame Material: Copper Substrate Material: N/A Lead Finish, Composition / Thickness: Pure Sn Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: Saw Process Die Attach Supplier: Hitachi Die Attach Material: DAF900 Bond Diagram Designation 001-89835 Wire Bond Method: Thermosonic Wire Material/Size: 0.8 mil /CuPd Thermal Resistance Theta JA °C/W: 18.36 °C /W Package Cross Section Yes/No: Yes Assembly Process Flow: 001-89390 Name/Location of Assembly (prime) facility: ASE-Taiwan (G) MSL Level 3 Reflow Profile 260C ELECTRICAL TEST / FINISH DESCRIPTION Test Location: ASE-Taiwan (G) Note: Please contact a Cypress Representative for other package availability. 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Page 4 of 12 Document No. 001-92452 Rev. ** ECN #:4376541 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS Stress/Test Test Condition (Temp/Bias) Result P/F High Temperature Storage JESD22-A103: 150 C, no bias P High Temperature Operating Life Early Failure Rate (EFR) Dynamic Operating Condition, 150°C, 3.78V/3.96V, 48 Hours JESD22-A108 P High Temperature Operating Life Latent Failure Rate (LFR) Dynamic Operating Condition, 150°C, 3.78V/3.96V, 500 Hours JESD22-A108 P High Temperature Steady State life Static Operating Condition, 150°C, 2.07V, Vcc Max JESD22-A-108 P Low Temperature Operating Life Dynamic Operating Condition, -30°C, 4.3V JESD22-A108 P Pre/Post LFR AC/DC Char AC/DC Critical Parameter Char at LFR 0hrs, 80hrs P Temperature Cycle MIL-STD-883, Method 1010, Condition C, -65 °C to 150°C Precondition: JESD22 Moisture Sensitivity Level (192 Hrs., 30 °C, 60% RH, 260°C Reflow) P High Accelerated Stress Test (HAST) Pressure Cooker JEDEC STD 22-A110: 130°C, 85% RH, 3.96V Precondition: JESD22 Moisture Sensitivity Level (192 Hrs., 30 °C, 60% RH, 260°C Reflow) JESD22-A102:121°C /100%RH, 15 PSIG Precondition: JESD22 Moisture Sensitivity Level (192 Hrs., 30 °C, 60% RH, 260°C Reflow) P P Aged Bond Strength 200C, 4hrs MIL-STD-883, Method 2011 P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V (Non-RF), JESD22-A114 500V (RF) P Electrostatic Discharge Charge Device Model (ESD-CDM) 500V (Non-RF), JESD22-C101 200V (RF) P Electrostatic Discharge Machine Model (ESD-MM) 200V, JESD22-A115 P ± 140mA, 85°C /125°C, JESD78 Static Latch-Up P Acoustic Microscopy J-STD-020 Precondition: JESD22 Moisture Sensitivity Level (192 Hrs., 30 °C, 60% RH, 260°C Reflow) P SEM X-Section XY audit at center wafer and edge wafer P Constructional Analysis Criteria: Meet external and internal characteristics of Cypress package P Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 12 Document No. 001-92452 Rev. ** ECN #:4376541 RELIABILITY FAILURE RATE SUMMARY Stress/Test High Temperature Operating Life 1 Early Failure Rate 1, 2 High Temperature Operating Life Long Term Failure Rate 1. 2. Device Tested/ Device Hours # Fails Activation Energy Thermal AF3 Failure Rate 1,500 Devices 0 N/A N/A 0 PPM 231,284 DHRs 0 0.7 170 23 FIT 1 2 EFR PPM Failure Rate was computed based from QTP#134704. LFR FIT Rate was computed based from QTP#104609 and QTP#134704. 1 2 3 Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. -5 K = Boltzmann's constant = 8.62x10 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 12 Document No. 001-92452 Rev. ** ECN #:4376541 Reliability Test Data QTP #: 104609 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ACOUSTIC, MSL3 CYRF8935 NA Q6B401.1 L-Korea COMP 15 0 CYRF8935 NA Q6B402.1 L-Korea COMP 15 0 CYRF8935 NA Q3A653.1 L-Korea COMP 15 0 CYRF8935 NA Q3A652 L-Korea COMP 3 0 CYRF8935 NA Q3A651 L-Korea COMP 3 0 STRESS: AGED BOND STRESS: CONSTRUCTIONAL ANALYSIS CYRF8935 NA Q3A652 L-Korea COMP 5 0 CYRF8935 NA Q3A651 L-Korea COMP 5 0 STRESS: ESD-CHARGED DEVICE MODEL, (200V) – RF CYRF8935 NA Q6B401.1 L-Korea COMP 9 0 CYRF8935 NA Q6B402.1 L-Korea COMP 9 0 STRESS: ESD-CHARGED DEVICE MODEL, (500V) – NON RF CYRF8935 NA Q6B401.1 L-Korea COMP 9 0 CYRF8935 NA Q6B402.1 L-Korea COMP 9 0 STRESS: ESD-HUMAN BODY MODEL, (500V) – RF CYRF8935 NA Q6B401.1 L-Korea COMP 8 0 CYRF8935 NA Q6B402.1 L-Korea COMP 8 0 STRESS: ESD-HUMAN BODY MODEL, (2200V) – RF CYRF8935 NA Q6B401.1 L-Korea COMP 8 0 CYRF8935 NA Q6B402.1 L-Korea COMP 8 0 STRESS: HI-ACCEL STRESS TEST (130C, 85%RH, 3.96V), PRE COND 192 HR 30C/60%RH (MSL3) CYRF8935 NA Q6B401.1 L-Korea 128 77 0 CYRF8935 NA Q6B402.1 L-Korea 128 77 0 STRESS: HIGH TEMPERATURE STORAGE, 150C CYRF8935 NA Q6B401.1 L-Korea 500 77 0 CYRF8935 NA Q6B401.1 L-Korea 1000 77 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 12 Document No. 001-92452 Rev. ** ECN #:4376541 Reliability Test Data QTP #: 104609 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP STEADY STATE LIFE TEST (150C, 2.07V) 7C39480AH 9107636 610107389 G-Taiwan 80 77 0 7C39480AH 9107636 610107389 G-Taiwan 168 73 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150C, 3.96V) CYRF8935 NA Q6B401.1 L-Korea 48 500 0 CYRF8935 NA Q6B402.1 L-Korea 48 499 0 CYRF8935 NA Q3A653.1 L-Korea 48 500 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 3.96V) CYRF8935 NA Q6B401.1 L-Korea 80 116 0 CYRF8935 NA Q6B401.1 L-Korea 500 116 0 CYRF8935 NA Q6B402.1 L-Korea 80 113 0 CYRF8935 NA Q6B402.1 L-Korea 500 110 0 CYRF8935 NA Q3A653.1 L-Korea 80 115 0 CYRF8935 NA Q3A653.1 L-Korea 500 115 0 STRESS: PRE/POST LFR ELECTRICAL ASSESSMENT CYRF8935 NA Q6B401.1 L-Korea 80 30 0 CYRF8935 NA Q6B402.1 L-Korea 80 30 0 CYRF8935 NA Q3A653.1 L-Korea 80 30 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH, 15 Psig), PRE COND 192 HR 30C/60%RH (MSL3) CYRF8935 NA Q6B401.1 L-Korea 168 77 0 CYRF8935 NA Q6B401.1 L-Korea 288 77 0 CYRF8935 NA Q6B402.1 L-Korea 168 77 0 CYRF8935 NA Q6B402.1 L-Korea 288 77 0 G-Taiwan 500 48 0 Q6B401.1 L-Korea COMP 3 0 Q6B401.1 L-Korea COMP 10 0 STRESS: LOW TEMPERATURE DYNAMIC OPERATING LIFE, -30C, 4.3V 7C39480AH 9052411 340100001 STRESS: THERMAL JUNCTION MEASUREMENT CYRF8935 NA STRESS: SEM X-SECTION/STEM CYRF8935 NA Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 12 Document No. 001-92452 Rev. ** ECN #:4376541 Reliability Test Data QTP #: 104609 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: STATIC LATCH-UP TESTING, 125C, +/-140mA CYRF8935 NA Q6B401.1 L-Korea COMP 6 0 CYRF8935 NA Q6B402.1 L-Korea COMP 6 0 STRESS: TEMPERATURE CYCLE (COND. C, -65C TO 150C) CYRF8935 NA Q6B401.1 L-Korea 500 77 0 CYRF8935 NA Q6B401.1 L-Korea 1000 77 0 CYRF8935 NA Q6B401.1 L-Korea 1500 77 0 CYRF8935 NA Q6B402.1 L-Korea 500 77 0 CYRF8935 NA Q6B402.1 L-Korea 1000 77 0 CYRF8935 NA Q6B402.1 L-Korea 1500 77 0 CYRF8935 NA Q3A653.1 L-Korea 500 77 0 CYRF8935 NA Q3A653.1 L-Korea 1000 77 0 CYRF8935 NA Q3A653.1 L-Korea 1500 77 0 L-Korea COMP 3 0 STRESS: THERMAL JUNCTION MEASUREMENT CYRF8935 NA Q6B401.1 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 12 Document No. 001-92452 Rev. ** ECN #:4376541 Reliability Test Data QTP #: 134704 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ESD-CHARGE DEVICE MODEL, (500V) CYRF9935 (7CP99351A) 8342000 611342982/83/84 G-Taiwan COMP 9 0 CYRF9935 (7CP99351A) 8342000 611344937/38/40 G-Taiwan COMP 8 0 CYRF9935 (7CP99351A) 8342000 611345904/05/06 G-Taiwan COMP 8 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114, (2,200V) CYRF9935 (7CP99351A) 8342000 611342982/83/84 G-Taiwan COMP 8 0 CYRF9935 (7CP99351A) 8342000 611344937/38/40 G-Taiwan COMP 8 0 CYRF9935 (7CP99351A) 8342000 611345904/05/06 G-Taiwan COMP 8 0 STRESS: ESD-MACHINE MODEL, (200V) CYRF9935 (7CP99351A) 8342000 611342982/83/84 G-Taiwan COMP 5 0 CYRF9935 (7CP99351A) 8342000 611344937/38/40 G-Taiwan COMP 5 0 CYRF9935 (7CP99351A) 8342000 611345904/05/06 G-Taiwan COMP 5 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150C, 3.78V, Vcc Max) CYRF9935 (7CP99351A) 8342000 611342982/83/84 G-Taiwan 48 1500 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 3.78V, Vcc Max) CYRF9935 (7CP99351A) 8342000 611342982/83/84 G-Taiwan 80 116 0 CYRF9935 (7CP99351A) 8342000 611342982/83/84 G-Taiwan 524 116 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 192 HR 30C/60%RH (MSL3) CYRF9935 (7CP99351A) 8342000 611342982/83/84 G-Taiwan 168 78 0 CYRF9935 (7CP99351A) 8342000 611342982/83/84 G-Taiwan 288 78 0 STRESS: PRE/POST HIGH TEMP DYNAMIC OPERATING LIFE - LATENT FAILURE RATE CHAR CYRF9935 (7CP99351A) 8342000 611342982/83/84 G-Taiwan COMP 9 0 STRESS: STATIC LATCH-UP TESTING (85C, 5.4V, +/-140mA) CYRF9935 (7CP99351A) 8342000 611342982/83/84 G-Taiwan COMP 6 0 CYRF9935 (7CP99351A) 8342000 611344937/38/40 G-Taiwan COMP 6 0 CYRF9935 (7CP99351A) 8342000 611345904/05/06 G-Taiwan COMP 6 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 12 Document No. 001-92452 Rev. ** ECN #:4376541 Reliability Test Data QTP #: 134704 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: TC COND. C –65C TO 150C, PRE COND 192 HR 30C/60%RH, MSL3 CYRF9935 (7CP99351A) 8342000 611342982/83/84 G-Taiwan 500 80 0 CYRF9935 (7CP99351A) 8342000 611342982/83/84 G-Taiwan 1000 80 0 CYRF9935 (7CP99351A) 8342000 611344937/38/40 G-Taiwan 500 80 0 CYRF9935 (7CP99351A) 8342000 611344937/38/40 G-Taiwan 1000 80 0 CYRF9935 (7CP99351A) 8342000 611345904/05/06 G-Taiwan 500 80 0 CYRF9935 (7CP99351A) 8342000 611345904/05/06 G-Taiwan 1000 80 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 12 Document No.001-92452 Rev. ** ECN #: 4376541 Document History Page Document Title: Document Number: QTP# 134704: WIRELESS USB-NX FAMILY (CYRF9935), 0.18UM, TSMC 001-92452 Rev. ECN Orig. of No. Change ** 4376541 JYF Description of Change Initial release. Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 12 of 12