Document No.001-88102 Rev. *A ECN # 4419050 Cypress Semiconductor Product Qualification Report QTP# 094501 VERSION*A June, 2014 PROC™ LP PRODUCT FAMILY B53D-3GRS4AD-5 TECHNOLOGY, FAB 4 CYRF69213* CYRF69103* Programmable Radio on Chip Low Power FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT [email protected] or via a CYLINK CRM CASE Prepared By: Josephine Pineda Reliability Engineer Reviewed By: Rene Rodgers Reliability Manager Approved By: Richard Oshiro Reliability Director Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 17 Document No.001-88102 Rev. *A ECN # 4419050 PRODUCT QUALIFICATION HISTORY Qual Report 054001 Description of Qualification Purpose USB5CR Product Family on S4AD-5 Technology transfer to Fab4 Date Comp Oct 05 052404 WUSB-LS2 7B6936A New Device using B53D-3GR Technology in Fab4 Mar 06 062301 Qualify 40-Lead QFN Sandwich Stack Die at Amkor-Korea (L), MSL3, 260C Reflow Dec 06 094501 Device Paper QTP for the PRoC2 dual-die stack family (CYRF69213* and CYRF69103*) Nov 09 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 17 Document No.001-88102 Rev. *A ECN # 4419050 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Device Paper QTP for the PRoC2 dual-die stack family (CYRF69213* and CYRF69103*) Marketing Part #: CYRF69213* and CYRF69103* Device Description: Programmable Radio on Chip Low Power Cypress Division: Cypress Semiconductor Corporation – Data Communication Division (DCD) TECHNOLOGY/FAB PROCESS DESCRIPTION – B53D-3GR Number of Metal Layers: 2 Metal Composition: Metal 1: 500Å TiW / 6000Å Al / 500Å TiW Metal 2: 500Å TiW / 8000Å Al / 500Å TiW Passivation Type and Materials: 1,000A TEOS + 9,000A Si2N4 Free Phosphorus contents in top glass layer (%): 0% Die Coating(s), if used: N/A Number of Transistors in Device 120K Number of Gates in Device 30K Generic Process Technology/Design Rule (µ-drawn): CMOS, 0.25 m Gate Oxide Material/Thickness (MOS): SiO2 / 55Å Name/Location of Die Fab (prime) Facility: Cypress Minnesota, Fab4 Die Fab Line ID/Wafer Process ID: Fab4/B53D-3 TECHNOLOGY/FAB PROCESS DESCRIPTION S4AD-5 Number of Metal Layers: 2 Metal Composition: Metal 1: 500A TiW/6,000A AlCu (0.5%)/300A TiW Metal 2: 500A TiW/8,000A AlCu (0.5%)/300A TiW Passivation Type and Materials: 7,000A TeOs / 6,000A Si3N4 Free Phosphorus contents in top glass layer (%): 0% Number of Transistors in Device: 279,000 Number of Gates in Device 13,000 Generic Process Technology/Design Rule (µ-drawn): Single Poly, Double Metal, 0.35 m Gate Oxide Material/Thickness (MOS): SiO2 / 100A Name/Location of Die Fab (prime) Facility: Cypress Semiconductor - Minnesota Die Fab Line ID/Wafer Process ID: Fab 4, S4AD-5 CMI, SONOS ELECTRICAL TEST / FINISH DESCRIPTION Test Location: KYEC, Taiwan Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 17 Document No.001-88102 Rev. *A ECN # 4419050 RELIABILITY FAILURE RATE SUMMARY Device Tested/ Device Hours # Fails Activation Energy Thermal3 A.F Failure Rate High Temperature Operating Life Early Failure Rate1 3,006 Devices 0 N/A N/A 0 PPM High Temperature Operating Life1, 2 Long Term Failure Rate 528,750 DHRs 0 0 .7 55 31 FIT Stress/Test 1 2 3 Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. Chi-squared 60% estimations used to calculate the failure rate.. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 17 Document No.001-88102 Rev. *A ECN # 4419050 MAJOR PACKAGE INFORMATION FOR THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: Mold Compound Flammability Rating: LY40 40-Lead QFN EME G700 V-0 Oxygen Rating Index: NA Lead Frame Material: Copper Lead Finish, Composition / Thickness: Pure Sn Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: Sawing Die Attach Supplier: Ablestik Die Attach Material: Ablebond 8290 (bottom), 8900NC (spacer) Die Attach Method: Epoxy Bond Diagram Designation: 001-06076 Wire Bond Method: Thermosonic Wire Material/Size: Au. 1.0mil Thermal Resistance Theta JA °C/W: <30°C/W Package Cross Section Yes/No: N/A Assembly Process Flow: 001-00920 Name/Location of Assembly (prime) facility: Seoul-Korea (L) MSL Level 3 Reflow Profile 260C PACKAGE AVAILABILITY PACKAGE 40-Pin QFN ASSEMBLY SITE FACILITY Amkor-Seoul Korea (SEOUL-L) Note: Please contact a Cypress Representative for other packages availability. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 17 Document No.001-88102 Rev. *A ECN # 4419050 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS Stress/Test Test Condition (Temp/Bias) Dynamic Operating Condition, Vcc Max=5.5V, 125°C High Temperature Operating Life Early Dynamic Operating Condition, Vcc = 3.8V, 125°C Dynamic Operating Condition, Vcc = 4.0V, 125°C Failure Rate JESD22-A108 Dynamic Operating Condition, Vcc Max=5.5V, 125°C Dynamic Operating Condition, Vcc = 3.8V, 125°C High Temperature Operating Life Latent Failure Rate Dynamic Operating Condition, Vcc = 4.0V, 125°C JESD22-A108 JEDEC STD 22-A110: 130°C, 5.25V,3.63V, 85%RH Precondition: JESD22 Moisture Sensitivity Level High Accelerated Saturation Test (192 Hrs., 30C, 60% RH, 260°C Reflow) (HAST) Precondition: JESD22 Moisture Sensitivity Level (168 Hrs, 85C/85%RH, 260°C Reflow) High Temperature Steady State Life Static Operating Condition, Vcc Max = 5.5V, 3.63V, 125°C High Temperature Storage JESD22-A103:150°C, no bias Result P/F P P P P P Electrostatic Discharge Charge Device Model (ESD-CDM) Electrostatic Discharge Human Body Model (ESD-HBM) Electrostatic Discharge Human Body Model (ESD-HBM) MIL-STD-883, Method 1010, Condition C, -65°C to 150°C Precondition: JESD22 Moisture Sensitivity Level (192 Hrs., 30C, 60% RH, 260°C Reflow) Precondition: JESD22 Moisture Sensitivity Level (168 Hrs, 85C/85%RH, 260°C Reflow) JESD22-A102, 121C, 100%RH, 15 PSIG Precondition: JESD22 Moisture Sensitivity Level (192 Hrs., 30C, 60% RH, 260°C Reflow) Precondition: JESD22 Moisture Sensitivity Level (168 Hrs, 85C/85%RH, 260°C Reflow) 500V /750V JESD22-C101 1,100V/2,200V JEDEC EIA/JESD22-A114 2,200V MIL-STD-883, Method 3015.7 Endurance Test MIL-STD-883, Method 883-1033 P Age Bond Strength 200C, 4hrs MIL-STD-883, Method 883-2011 P Acoustic Microscopy J-STD-020 Precondition: JESD22 Moisture Sensitivity Level (192 Hrs., 30C, 60% RH, 260°C Reflow) Precondition: JESD22 Moisture Sensitivity Level (168 Hrs, 85C/85%RH, 260°C Reflow) P Ball Shear JESD22-B116 P Bond Pull MIL-STD-883 – Method 2011 P Current Density Meets the Technology Device Level Reliability Specifications P Temperature Cycle Pressure Cooker Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 17 P P P P P Document No.001-88102 Rev. *A ECN # 4419050 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT (CONT’D) Stress/Test Test Condition (Temp/Bias) Resul t P/F P Data Retention 150, No Bias Die Shear MIL-STD-883, Method 2019 P Dynamic Latch up 125C, 8.3V P JESD78 Internal Visual MIL-STD-883-2014 P Static Latch up 125C, 200mA JESD78 P SEM Analysis MIL-STD-883, Method 883-2018-2 P Long Life Verification Dynamic Operating Condition, Vcc = 4.0V, 125°C JESD22-A108 P Low Temperature Operating Life Dynamic Operating Condition, Vcc = 5.5V, 4.3V, -30°C, 8MHZ JESD22-A108 P Latch up Sensitivity 125C, 11V, 200mA, 300mA In accordance with JEDEC 17 P X-Ray MIL-STD-883 - 2012 P Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 17 Document No.001-88102 Rev. *A ECN # 4419050 Reliability Test Data QTP #: Device Fab Lot # 052004 Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ACOUSTIC, MSL1 CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T COMP 15 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M COMP 15 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M COMP 15 0 STRESS: AGE BOND STRENGTH CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T COMP 10 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M COMP 10 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M COMP 10 0 STRESS: DATA RETENTION, PLASTIC, 150C CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 500 256 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 1000 256 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 500 256 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 1000 254 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 500 252 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 1000 252 0 4516647 610521157 TAIWN-T COMP 45 0 STRESS: ENDURANCE CY8C21534 (8C21534A) STRESS: ESD-CHARGE DEVICE MODEL, (500V) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T COMP 9 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWN-T COMP 9 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWN-T COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T COMP 9 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWN-T COMP 9 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWN-T COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, (2,200V) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T COMP 3 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWN-T COMP 3 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWN-T COMP 3 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 17 Document No.001-88102 Rev. *A ECN # 4419050 Reliability Test Data QTP #: 052004 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 5.5V, Vcc Max) CY8C21234 (8C21234A) 4517851 610521157 TAIWN-T 120 1002 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 120 1002 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 120 1002 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 5.5V, Vcc Max) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 750 235 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWN-T 750 235 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWN-T 750 235 0 STRESS: HIGH TEMP STEADY STATE LIFE TEST (125C, 5.5V) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 168 76 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 336 76 0 STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 5.25V), PRE COND 168 HR 85C/85%RH, MSL1 CY8C21234 (8C21234A) 4516647 610527569 PHIL-M 128 49 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 128 44 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 128 44 0 500 45 0 STRESS: LOW TEMPERATURE OPERATING LIFE (-30C, 5.5V) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T STRESS: PRESSURE COOKER TEST (121C, 100%RH), PRE COND 168 HR 85C/85%RH, MSL1 CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 168 45 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 336 45 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 168 45 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 336 45 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 168 45 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 336 45 0 STRESS: STATIC LATCH-UP TESTING (125C, 11V, r300mA) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T COMP 3 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWN-T COMP 3 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWN-T COMP 3 0 610521157 TAIWN-T COMP 3 0 STRESS: DYNAMIC LATCH-UP (8.3V) CY8C21534 (8C21534A) 4516647 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 17 Document No.001-88102 Rev. *A ECN # 4419050 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # 052004 Assy Loc Duration Samp Rej Failure Mechanism STRESS: TC COND. C -65C TO 150C, PRE COND 168 HRS 85C/85%RH, MSL1 CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 300 50 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 500 50 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 1000 50 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 300 45 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 1000 45 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 300 45 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 17 Document No.001-88102 Rev. *A ECN # 4419050 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # 054001 Assy Loc Duration Samp Rej Failure Mechanism STRESS: E-TEST 7C6830AC 4548789 COMPARABLE 7C6830AC 4527976 COMPARABLE 7C6830AC 4528157 COMPARABLE 7C6830AC 4548789 COMPARABLE 7C6830AC 4527976 COMPARABLE STRESS: SORT YIELD 7C6830AT COMPARABLE Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 17 Document No.001-88102 Rev. *A ECN # 4419050 Reliability Test Data QTP #: Device Fab Lot # 99256 Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ACOUSTIC, MSL3 CY7B993V-AC 1937245 619937409 TAIWN-G COMP 15 0 CY7B994V-ACB 1942384 610003953 TAIWN-G COMP 15 0 CY7B994V-AC 1949608 340000124 TAIWN-G COMP 15 0 STRESS: HIGH TEMP DYNAMIC OPERTING LIFE - EARLY FAILURE RATE, 125C, 4.0V, >Vcc Max CY7B994V-AC 1009007 610021056 TAIWN-G 96 672 0 CY7B993V-AC 1937245 619937409 TAIWN-G 96 665 0 CY7B994V-ACB 1942384 610003953 TAIWN-G 96 664 0 CY7B994V-AC 1949608 340000124 TAIWN-G 96 681 0 STRESS: HIGH TEMP DYNAMIC OPERTING LIFE-LATENT FAILURE RATE, 125C, 4.0V, >Vcc Max CY7B993V-AC 1937245 619937409 TAIWN-G 168 235 0 CY7B994V-ACB 1937245 619937409 TAIWN-G 770 234 0 CY7B994V-ACB 1942384 610003953 TAIWN-G 168 232 0 CY7B994V-ACB 1942384 610003953 TAIWN-G 770 232 0 CY7B994V-AC 1949608 340000124 TAIWN-G 168 236 0 CY7B994V-AC 1949608 340000124 TAIWN-G 770 224 0 STRESS: LONG LIFE VERIFICATION 125C, 4.0V, >Vcc Max CY7B993V-AC 1937245 619937409 TAIWN-G 2000 170 0 STRESS: AGE BOND STRENGTH CY7B993V-AC 1937245 619937409 TAIWN-G COMP 3 0 CY7B994V-ACB 1942384 610003953 TAIWN-G COMP 6 0 CY7B994V-AC 1949608 340000124 TAIWN-G COMP 6 0 STRESS: ESD-CHARGE DEVICE MODEL, 750V CY7B994V-AC 1937245 619936456S TAIWN-G COMP 3 0 CY7B994V-ACB 1942384 610003953 TAIWN-G COMP 3 0 CY7B994V-AC 1949608 340000124 TAIWN-G COMP 3 0 STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 1,100V CY7B994V-AC 1937245 619936456S TAIWN-G COMP 3 0 CY7B994V-ACB 1942384 610003953 TAIWN-G COMP 3 0 CY7B994V-AC 1949608 340000124 TAIWN-G COMP 3 0 TAIWN-G COMP 3 0 STRESS: DYNAMIC LATCH-UP TESTING, 6.5V CY7B994V-ACB 1942384 610003953 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 12 of 17 Document No.001-88102 Rev. *A ECN # 4419050 Reliability Test Data QTP #: 99256 STRESS: HI-ACCEL SATURATION TEST, 130C, 85%RH, 3.63V, PRE COND 192 HR 30C/60%RH, MSL3 CY7B993V-AC 1937245 619937409 TAIWN-G 128 46 0 CY7B993V-AC 1937245 619937409 TAIWN-G 256 46 0 CY7B994V-ACB 1942384 610003953 TAIWN-G 128 46 0 CY7B994V-AC 1949608 340000124 TAIWN-G 128 48 0 STRESS: PRESSURE COOKER TEST, 121C, 100%RH, PRE COND 192HRS 30C/60%RH, MSL3 CY7B993V-AC 1937245 619937409 TAIWN-G 168 50 0 CY7B994V-ACB 1942384 610003953 TAIWN-G 168 46 0 CY7B994V-AC 1949608 340000124 TAIWN-G 168 48 0 STRESS: HIGH TEMP STEADY STATE LIFE TEST, 125C, 3.63V, >Vcc Max CY7B993V-AC 1937245 619937409 TAIWN-G 168 78 0 CY7B993V-AC 1937245 619937409 TAIWN-G 336 76 0 STRESS: LOW TEMPERATURE OPERATING LIKE, -30C, 4.3V, 8MHZ CY7B993V-AC 1937245 619937409 TAIWN-G 500 50 0 CY7B993V-AC 1937245 619937409 TAIWN-G 1000 50 0 STRESS: HIGH TEMP STORGAE, PLASTIC, 150C CY7B993V-AC 1937245 619937409 TAIWN-G 500 50 0 CY7B993V-AC 1937245 619937409 TAIWN-G 1000 50 0 CY7B994V-ACB 1942384 610003953 TAIWN-G 500 48 0 CY7B994V-ACB 1942384 610003953 TAIWN-G 1000 48 0 CY7B994V-AC 1949608 340000124 TAIWN-G 500 48 0 CY7B994V-AC 1949608 340000124 TAIWN-G 1000 48 0 STRESS: TC CONDITION C, -65C TO 150C, PRE COND 192 HRS 30C/60% RH, MSL3 CY7B993V-AC 1937245 619937409 TAIWN-G 300 50 0 CY7B993V-AC 1937245 619937409 TAIWN-G 500 50 0 CY7B993V-AC 1937245 619937409 TAIWN-G 1000 50 0 CY7B994V-ACB 1942384 610003953 TAIWN-G 300 46 0 CY7B994V-ACB 1942384 610003953 TAIWN-G 500 46 0 CY7B994V-AC 1949608 340000124 TAIWN-G 300 48 0 CY7B994V-AC 1949608 340000124 TAIWN-G 500 48 0 CY7B994V-AC 1949608 340000124 TAIWN-G 1000 48 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 13 of 17 Document No.001-88102 Rev. *A ECN # 4419050 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # Assy Loc 052404 Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 3.8V, Vcc Max) CYWUSB6936 4530746 610560091 SEOUL-L 96 1020 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 3.8V, Vcc Max) CYWUSB6936 4530746 610560091 SEOUL-L 168 340 0 CYWUSB6936 4530746 610560091 SEOUL-L 500 340 0 SEOUL-L COMP 9 0 9 0 COMP 3 0 COMP 3 0 STRESS: ESD-CHARGE DEVICE MODEL (500V) CYWUSB6936 4545906 610609523 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 2,200V CYWUSB6936 4530746 610560091 SEOUL-L COMP STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,200V CYWUSB6936 4530746 610560091 SEOUL-L STRESS: STATIC LATCH-UP TESTING (125C, 5V, +/-200mA) CYWUSB6936 4545906 610609523 SEOUL-L STRESS: PRESSURE COOKER TEST, 121C, 100%RH, PRE COND 192HRS 30C/60%RH, MSL3 CYWUSB6934 4409927 610441446 SEOUL-L 168 50 0 STRESS: TC COND. C -65C TO 150C, PRE COND 192HRS 30C/60%RH, MSL3 CYWUSB6934 4409927 610441446 SEOUL-L 300 50 0 CYWUSB6934 4409927 610441446 SEOUL-L 500 50 0 CYWUSB6934 4409927 610441446 SEOUL-L 1000 50 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 14 of 17 Document No.001-88102 Rev. *A ECN # 4419050 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # 094501 Assy Loc Duration Samp Rej Failure Mechanism STRESS: ACOUSTIC, MSL3 CYRF69103 (7B69103A) 4548789 610638092 SEOUL-L COMP 15 0 CYRF69103 (7B69103A) 4548789 610638093 SEOUL-L COMP 15 0 CYRF69213 (7B69213A) 4548789 610638360 SEOUL-L COMP 15 0 CYRF69103 (7B69103A) 4548789 610638092 SEOUL-L COMP 10 0 CYRF69103 (7B69103A) 4548789 610638093 SEOUL-L COMP 10 0 CYRF69213 (7B69213A) 4548789 610638360 SEOUL-L COMP 10 0 CYRF69103 (7B69103A) 4548789 610638092 SEOUL-L COMP 10 0 CYRF69103 (7B69103A) 4548789 610638093 SEOUL-L COMP 10 0 CYRF69213 (7B69213A) 4548789 610638360 SEOUL-L COMP 10 0 CYRF69103 (7B69103A) 4548789 610638092 SEOUL-L COMP 10 0 CYRF69103 (7B69103A) 4548789 610638093 SEOUL-L COMP 10 0 CYRF69213 (7B69213A) 4548789 610638360 SEOUL-L COMP 10 0 STRESS: BALL SHEAR STRESS: BOND PULL STRESS: DIE SHEAR STRESS: INTERNAL VISUAL CYRF69103 (7B69103A) 4548789 610638092 SEOUL-L COMP 5 0 CYRF69103 (7B69103A) 4548789 6106380932 SEOUL-L COMP 5 0 CYRF69213 (7B69213A) 4548789 610638360 SEOUL-L COMP 5 0 STRESS: ESD-CHARGE DEVICE MODEL, 500V CYRF69103 (7B69103A) 4548789 610638092 SEOUL-L COMP 9 0 CYRF69213 (7B69213A) 4548789 610638360 SEOUL-L COMP 9 0 9 0 COMP 3 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JEDEC EIA/JESD22-A114-B, 2,200V CYRF69213 (7B69213A) 4548789 610638360 SEOUL-L COMP STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,200V CYRF69213 (7B69213A) 4548789 610638360 SEOUL-L STRESS: STATIC LATCH-UP TESTING, 125C, 5.4V, +/200mA CYRF69103 (7B69103A) 4548789 610638092 SEOUL-L COMP 3 0 CYRF69213 (7B69213A) 4548789 610638360 SEOUL-L COMP 3 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 15 of 17 Document No.001-88102 Rev. *A ECN # 4419050 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # 094501 Assy Loc Duration Samp Rej Failure Mechanism STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 192 HR 30C/60%RH, MSL3 CYRF69103 (7B69103A) 4548789 610638092 SEOUL-L 168 45 0 STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH, MSL3 CYRF69103 (7B69103A) 4548789 610638092 SEOUL-L 300 120 0 CYRF69103 (7B69103A) 4548789 610638093 SEOUL-L 300 119 0 CYRF69213 (7B69213A) 4548789 610638360 SEOUL-L 300 118 0 CYRF69103 (7B69103A) 4548789 610638092 SEOUL-L COMP 15 0 CYRF69103 (7B69103A) 4548789 610638093 SEOUL-L COMP 15 0 CYRF69213 (7B69213A) 4548789 610638360 SEOUL-L COMP 15 0 STRESS: X-RAY Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 16 of 17 Document No.001-88102 Rev. *A ECN # 4419050 Document History Page Document Title: QTP # 094501 : PROC LP PRODUCT FAMILY(CYRF69213* , CYRF69103*), B53D-3GR S4AD-5 TECHNOLOGY, FAB 4 Document Number: 001-88102 Rev. ECN Orig. of No. Change ** 4039235 ILZ Description of Change *A Sunset review: Updated QTP title page and Reliability Tests Performed table (EFR/LFR,HAST,HTSSL,HTS,TCT,PCT,ESD-CDM/HBM,Acoustic Microscopy,Static Latch-Up) for template alignment. 4419050 JYF Initial Spec Release Qualification report published on Cypress.com is documented on memo FDW-437 and not in spec format. Initiated spec for QTP 094501 and all data from memo# FDW-437 was transferred to qualification report spec template. Deleted package qualification details on package qualification history table. Deleted Cypress reference Spec and replaced with Industry Standards Updated package availability based on current qualified test & assembly site. Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 17 of 17