103510:SONOS 4 TECHNOLOGY DERIVATIVE S4AD-HV40 POWER PSOC PHOENIX CMI FAB4, CYPRESS

Document No.001-65517 Rev. *B
ECN # 4596444
Cypress Semiconductor
Product Qualification Report
QTP#103510 VERSION*B
December 2014
SONOS 4 Technology Derivative S4AD-HV40
Power PSoC Phoenix Product Qualification
CMI Fab4, Cypress
CY8CLED04D01
CY8CLED04D02
CY8CLED04G01
CY8CLED04DOCD1
CY8CLED03D01
CY8CLED03D02
CY8CLED03G01
CY8CLED02D01
CY8CLED01D01
PowerPSoC Intelligent LED Driver,
4-Channel, 1 Amp
PowerPSoC Intelligent LED Driver,
4-Channel, 0.5 Amp
PowerPSoC Intelligent LED Driver,
4-Channel, 1 Amp, Gate Driver
PowerPSoC Intelligent LED Driver,
4-Channel, 1 Amp, On Chip
Debugger
PowerPSoC Intelligent LED Driver,
3-Channel, 1 Amp
PowerPSoC Intelligent LED Driver,
3-Channel, 0.5 Amp
PowerPSoC Intelligent LED Driver,
3-Channel, 1 Amp, Gate Driver
PowerPSoC Intelligent LED Driver,
2-Channel, 1 Amp
PowerPSoC Intelligent LED Driver,
1-Channel, 1 Amp
FOR ANY QUESTIONS ON THIS REPORT, PLEAE CONTACT
reliability@cypress.com or via a CYLINK CRM CASE
Prepared By:
Honesto Sintos
Reliability Engineer
Reviewed By:
Zhaomin Ji
Reliability Manager
Approved By:
Richard Oshiro
Reliability Director
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 1 of 8
Document No.001-65517 Rev. *B
ECN # 4596444
QUALIFICATION HISTORY
Qual
Report
Description of Qualification Purpose
Date
Comp
075103
To qualify S4 SONOS technology derivative S4AD-HV40 Power PSoC Phoenix device,
fabricated at Cypress CMI Fab4
May 2009
103510
To qualify PowerPSoC device for user condition of 850C junction temperature using
actual life test junction temperature of 1580C.
Sep 2010
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 2 of 8
Document No.001-65517 Rev. *B
ECN # 4596444
PRODUCT DESCRIPTION (for qualification)
Purpose: Qualification of S4AD-HV40 technology & Phoenix Power PSoC product at Cypress CMI, Fab4
Marketing Part #:
CY8CLED04D01, CY8CLED04D02, CY8CLED04G01, CY8CLED04DOCD1, CY8CLED03D01,
CY8CLED03D02, CY8CLED03G01, CY8CLED02D01, CY8CLED01D01
Device Description:
Phoenix (4 Channels @ 36V, 1A) Power PSoC device, a SONOS 4 technology derivative (S4AD-HV40)
product, fabricated at Cypress CMI Fab4. Device 8C42344A (MKT Part# CY8CLED04D01-56LTXI) is in
a 56 lead QFN package (8x8x1mm) assembled at CARSEM Malaysia
Cypress Division:
Cypress Semiconductor Corporation – DCD
TECHNOLOGY/FAB PROCESS DESCRIPTION – S8TEE-5R
Passivation Type and Materials:
Metal 1: TiW / Al / TiW (7150Å)
Metal
Composition: Metal 2: TiW / Al / TiW (9150Å)
TEOS/Nitride (5950Å/5700Å)
Generic Process Technology/Design Rule (drawn):
SONOS 4 / 0.5m
Gate Oxide Material/Thickness (MOS):
SiO2 110Å
Name/Location of Die Fab (prime) Facility:
CMI, Fab4
S4AD-HV40 / Wafer Process ID:
Fab4 / S4AD-HV40
Number of Metal Layers:
2
PACKAGE / ASSEMBLY INFORMATION
Assembly Site:
CARSEM, Malaysia
Package:
56 QFN
Mold Compound:
GE7470L-A
Die Attach:
AMK-06
Die Size:
187 mils x 177 mils
Leadframe Design:
N/A
Leadfinish/solder ball:
NiPdAu
Wire (Al/Au) diam:
0.8 mil
MSL:
3
Solder Reflow Temp:
260C
Note: Package Qualification details upon request
Company Confidential
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Page 3 of 8
Document No.001-65517 Rev. *B
ECN # 4596444
RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT
Stress/Test
High Temperature Operating Life
Early Failure Rate (EFR)
Test Condition
(Temp/Bias)
Result
P/F
Dynamic Operating Condition, Ta=125C (Tj=158C), 5.5V/38V,
96 Hours
P
JESD22-A-108-B
High Temperature Operating Life
Latent Failure Rate (LFR)
Dynamic Operating Condition, 125C (Tj=158C),, 5.5V/38V,
1000 Hours
P
JESD22-A-108-B
Endurance
50K Cycles @ 25C, Per datasheet
P
Data Retention
150C, 1000 Hours
P
Temperature Cycle
-650C to 1500C, JESD22-A-104
P
500 Cycs, Require Precondition
High Accelerated Saturation Test
130C, 5.5V/38V, 85%RH, JESD22-A-110-B
(HAST)
128 Hours, Require Precondition
Pressure Cooker
121C/100%RH, JESD22-A102-C
P
P
168 Hours, Require Precondition
Precondition
JESD22 Moisture Sensitivity
Electrostatic Discharge
Human Body Model (ESD-HBM)
2,200V, JESD22-A114E
Electrostatic Discharge
Charge Device Model (ESD-CDM)
500V, JESD22-C101C
Latch-up Sensitivity
125C, EIA/JESD78,
P
P
P
P
41V, 8.25V,± 200mA
Age Bond Strength
Mil-Std-883, Method 2011
P
Acoustic (M3)
J-STD-020
P
SEM X-Section
XY audit at center wafer and edge wafer
P
Low Temperature Operating Life Test
Dynamic Operating Condition, 5.5V/38V, -30C, 500 Hours
P
Company Confidential
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Page 4 of 8
Document No.001-65517 Rev. *B
ECN # 4596444
RELIABILITY FAILURE RATE SUMMARY
Stress/Test
Device Tested/
Device Hours
#
Fails
Activation
Energy
Thermal
AF4
Failure Rate
High Temperature Operating Life
Early Failure Rate
3195 Devices
1
N/A
N/A
313 PPM
High Temperature Operating Life1,2,
Long Term Failure Rate
627,000 DHRs
0
0.7
47
31 FITs
1
2
3
User junction temperature 85C and HTOL actual stress junction temperature 158C.
Chi-squared 60% estimations used to calculate the failure rate.
Thermal Acceleration Factor is calculated from the Arrhenius equation
E  1 1  
AF = exp  A  -  
 k  T 2 T1  
where:
EA =The Activation Energy of the defect mechanism.
k = Boltzmann's constant = 8.62x10-5 eV/Kelvin.
T1 is the junction temperature of the device under stress and T2 is the junction temperature of the
device at use conditions.
Company Confidential
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Page 5 of 8
Document No.001-65517 Rev. *B
ECN # 4596444
Reliability Test Data
QTP #:
Device
Failure Mechanism
Fab Lot #
Assy Lot #
075103
Assy Loc
Duration
Samp Rej
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 5.5V/38V
CY8CLED04DOCD1 (8C42344A) 4835764
610848989
CA-Malaysia
96
1161
1 Non-vis, FA075103-1E1
CY8CLED04D01 (8C42344A)
4845231
610900704
CA-Malaysia
96
540
0
CY8CLED04G01 (8C42344A)
4851730
610910255
CA-Malaysia
96
1128
0
CY8CPWR01 (8C42344A)
4901552
610910254
CA-Malaysia
96
366
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 125C, 5.5V/38V
CY8CLED04DOCD1 (8C42344A) 4835764
610848989
CA-Malaysia
1000
210
0
CY8CLED04D01 (8C42344A)
4845231
610900704
CA-Malaysia
1000
210
0
CY8CLED04G01 (8C42344A)
4851730
610910255
CA-Malaysia
1000
207
0
610851402
CA-Malaysia
COMP
88
0
CY8CLED04DOCD1 (8C42344A) 4817222
610833422
CA-Malaysia
1000
90
0
CY8CLED04DOCD1 (8C42344A) 4835764
610851402
CA-Malaysia
1000
82
0
CY8CLED04G01 (8C42344A)
4851730
610910255
CA-Malaysia
1000
80
0
CY8CPWR01 (8C42344A)
4901552
610910254
CA-Malaysia
1000
80
0
STRESS: ENDURANCE, 50K CYCLES
CY8CLED04DOCD1 (8C42344A) 4835764
STRESS: DATA RETENTION, 150C
STRESS: ESD-HUMAN BODY CIRCUIT PER JEDEC EIA/JESD22-A114-B, 2,200V
CY8CLED04DOCD1 (8C42344A) 4835764
610848989
CA-Malaysia
COMP
8
0
CY8CLED04D01 (8C42344A)
610900704
CA-Malaysia
COMP
8
0
4845231
STRESS: ESD-CHARGE DEVICE MODEL, 500V
CY8CLED04DOCD1 (8C42344A) 4835764
610848989
CA-Malaysia
COMP
9
0
CY8CLED04D01 (8C42344A)
610900704
CA-Malaysia
COMP
9
0
4845231
STRESS: HI-ACCEL SATURATION TEST, 130C, 85%RH, 5.5V/38V, PRE COND 192 HR 30C/60%RH, MSL3
CY8CLED04DOCD1 (8C42344A) 4835764
610848989
CA-Malaysia
128
20
0
CY8CLED04D01 (8C42344A)
4845231
610900704
CA-Malaysia
128
83
0
CY8CLED04G01 (8C42344A)
4851730
610910255
CA-Malaysia
128
80
0
STRESS: PRESSURE COOKER TEST, 121C, 100%RH, 15 Psig, PRE COND 192 HR 30C/60%RH, MSL3
CY8CLED04DOCD1 (8C42344A) 4817222
610833422
CA-Malaysia
168
100
0
CY8CLED04DOCD1 (8C42344A) 4835764
610848989
CA-Malaysia
168
90
0
CY8CLED04D01 (8C42344A)
610900704
CA-Malaysia
168
90
0
4845231
Company Confidential
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Page 6 of 8
Document No.001-65517 Rev. *B
ECN # 4596444
Reliability Test Data
QTP #: 075103
Device
Mechanism
Fab Lot #
Assy Lot #
Assy Loc
Duration Samp
Rej
Failure
STRESS: TEMPERATURE CYCLE COND. C, -65C TO 150C, PRE COND 192 HRS 30C/60%RH, MSL3
CY8CLED04D01 (8C42344A)
4817222
610832110
CA-Malaysia
1000
89
0
CY8CLED04DOCD1 (8C42344A) 4835764
610848989
CA-Malaysia
1000
90
0
CY8CLED04D01 (8C42344A)
610900704
CA-Malaysia
1000
90
0
4845231
STRESS: HIGH TEMPERATURE STORAGE, 150C, PRE COND 192 HRS 30C/60%RH, MSL3
CY8CLED04DOCD1 (8C42344A) 4835764
610848989
CA-Malaysia
1000
90
0
500
54
0
STRESS: LOW TEMPERATURE OPERATING LIFE, -30C, 5.5V/38V
CY8CLED04G01 (8C42344A)
4851730
610910255
CA-Malaysia
STRESS: STATIC LATCH-UP TESTING, 125C, 8.25V/41V, 200mA
CY8CLED04D01 (8C42344A)
4845231
610900704
CA-Malaysia
COMP
9
0
CY8CLED04D01 (8C42344A)
4845231
610900704
CA-Malaysia
COMP
10
0
CY8CLED04G01 (8C42344A)
4851730
610910255
CA-Malaysia
COMP
10
0
4817222
610832110
CA-Malaysia
COMP
15
0
CY8CLED04DOCD1 (8C42344A) 4835764
610848989
CA-Malaysia
COMP
15
0
CY8CLED04D01 (8C42344A)
610900704
CA-Malaysia
COMP
15
0
STRESS: AGE BOND
STRESS: ACOUSTIC-MSL3
CY8CLED04D01 (8C42344A)
4845231
Company Confidential
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Page 7 of 8
Document No.001-65517 Rev. *B
ECN # 4596444
Document History Page
Document Title:
FAB4, CYPRESS
Document Number:
Rev. ECN
No.
**
3094927
*A
4184051
*B
103510: SONOS 4 TECHNOLOGY DERIVATIVE S4AD-HV40 POWER PSOC PHOENIX CMI
001-65517
Orig. of
Change
HGA
HSTO
4596444 HSTO
Description of Change
Initial spec release
Sunset Review
Remove “Version 1.0” in front page
Removed reference Cypress spec in the reliability test performed table
and retained reference Industry standard.
Align qualification report based on the new template in the front page
Distribution: WEB
Posting:
None
Company Confidential
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Page 8 of 8