Document No.001-65517 Rev. *B ECN # 4596444 Cypress Semiconductor Product Qualification Report QTP#103510 VERSION*B December 2014 SONOS 4 Technology Derivative S4AD-HV40 Power PSoC Phoenix Product Qualification CMI Fab4, Cypress CY8CLED04D01 CY8CLED04D02 CY8CLED04G01 CY8CLED04DOCD1 CY8CLED03D01 CY8CLED03D02 CY8CLED03G01 CY8CLED02D01 CY8CLED01D01 PowerPSoC Intelligent LED Driver, 4-Channel, 1 Amp PowerPSoC Intelligent LED Driver, 4-Channel, 0.5 Amp PowerPSoC Intelligent LED Driver, 4-Channel, 1 Amp, Gate Driver PowerPSoC Intelligent LED Driver, 4-Channel, 1 Amp, On Chip Debugger PowerPSoC Intelligent LED Driver, 3-Channel, 1 Amp PowerPSoC Intelligent LED Driver, 3-Channel, 0.5 Amp PowerPSoC Intelligent LED Driver, 3-Channel, 1 Amp, Gate Driver PowerPSoC Intelligent LED Driver, 2-Channel, 1 Amp PowerPSoC Intelligent LED Driver, 1-Channel, 1 Amp FOR ANY QUESTIONS ON THIS REPORT, PLEAE CONTACT [email protected] or via a CYLINK CRM CASE Prepared By: Honesto Sintos Reliability Engineer Reviewed By: Zhaomin Ji Reliability Manager Approved By: Richard Oshiro Reliability Director Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 8 Document No.001-65517 Rev. *B ECN # 4596444 QUALIFICATION HISTORY Qual Report Description of Qualification Purpose Date Comp 075103 To qualify S4 SONOS technology derivative S4AD-HV40 Power PSoC Phoenix device, fabricated at Cypress CMI Fab4 May 2009 103510 To qualify PowerPSoC device for user condition of 850C junction temperature using actual life test junction temperature of 1580C. Sep 2010 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 8 Document No.001-65517 Rev. *B ECN # 4596444 PRODUCT DESCRIPTION (for qualification) Purpose: Qualification of S4AD-HV40 technology & Phoenix Power PSoC product at Cypress CMI, Fab4 Marketing Part #: CY8CLED04D01, CY8CLED04D02, CY8CLED04G01, CY8CLED04DOCD1, CY8CLED03D01, CY8CLED03D02, CY8CLED03G01, CY8CLED02D01, CY8CLED01D01 Device Description: Phoenix (4 Channels @ 36V, 1A) Power PSoC device, a SONOS 4 technology derivative (S4AD-HV40) product, fabricated at Cypress CMI Fab4. Device 8C42344A (MKT Part# CY8CLED04D01-56LTXI) is in a 56 lead QFN package (8x8x1mm) assembled at CARSEM Malaysia Cypress Division: Cypress Semiconductor Corporation – DCD TECHNOLOGY/FAB PROCESS DESCRIPTION – S8TEE-5R Passivation Type and Materials: Metal 1: TiW / Al / TiW (7150Å) Metal Composition: Metal 2: TiW / Al / TiW (9150Å) TEOS/Nitride (5950Å/5700Å) Generic Process Technology/Design Rule (drawn): SONOS 4 / 0.5m Gate Oxide Material/Thickness (MOS): SiO2 110Å Name/Location of Die Fab (prime) Facility: CMI, Fab4 S4AD-HV40 / Wafer Process ID: Fab4 / S4AD-HV40 Number of Metal Layers: 2 PACKAGE / ASSEMBLY INFORMATION Assembly Site: CARSEM, Malaysia Package: 56 QFN Mold Compound: GE7470L-A Die Attach: AMK-06 Die Size: 187 mils x 177 mils Leadframe Design: N/A Leadfinish/solder ball: NiPdAu Wire (Al/Au) diam: 0.8 mil MSL: 3 Solder Reflow Temp: 260C Note: Package Qualification details upon request Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 8 Document No.001-65517 Rev. *B ECN # 4596444 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT Stress/Test High Temperature Operating Life Early Failure Rate (EFR) Test Condition (Temp/Bias) Result P/F Dynamic Operating Condition, Ta=125C (Tj=158C), 5.5V/38V, 96 Hours P JESD22-A-108-B High Temperature Operating Life Latent Failure Rate (LFR) Dynamic Operating Condition, 125C (Tj=158C),, 5.5V/38V, 1000 Hours P JESD22-A-108-B Endurance 50K Cycles @ 25C, Per datasheet P Data Retention 150C, 1000 Hours P Temperature Cycle -650C to 1500C, JESD22-A-104 P 500 Cycs, Require Precondition High Accelerated Saturation Test 130C, 5.5V/38V, 85%RH, JESD22-A-110-B (HAST) 128 Hours, Require Precondition Pressure Cooker 121C/100%RH, JESD22-A102-C P P 168 Hours, Require Precondition Precondition JESD22 Moisture Sensitivity Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V, JESD22-A114E Electrostatic Discharge Charge Device Model (ESD-CDM) 500V, JESD22-C101C Latch-up Sensitivity 125C, EIA/JESD78, P P P P 41V, 8.25V,± 200mA Age Bond Strength Mil-Std-883, Method 2011 P Acoustic (M3) J-STD-020 P SEM X-Section XY audit at center wafer and edge wafer P Low Temperature Operating Life Test Dynamic Operating Condition, 5.5V/38V, -30C, 500 Hours P Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 8 Document No.001-65517 Rev. *B ECN # 4596444 RELIABILITY FAILURE RATE SUMMARY Stress/Test Device Tested/ Device Hours # Fails Activation Energy Thermal AF4 Failure Rate High Temperature Operating Life Early Failure Rate 3195 Devices 1 N/A N/A 313 PPM High Temperature Operating Life1,2, Long Term Failure Rate 627,000 DHRs 0 0.7 47 31 FITs 1 2 3 User junction temperature 85C and HTOL actual stress junction temperature 158C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 8 Document No.001-65517 Rev. *B ECN # 4596444 Reliability Test Data QTP #: Device Failure Mechanism Fab Lot # Assy Lot # 075103 Assy Loc Duration Samp Rej STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 5.5V/38V CY8CLED04DOCD1 (8C42344A) 4835764 610848989 CA-Malaysia 96 1161 1 Non-vis, FA075103-1E1 CY8CLED04D01 (8C42344A) 4845231 610900704 CA-Malaysia 96 540 0 CY8CLED04G01 (8C42344A) 4851730 610910255 CA-Malaysia 96 1128 0 CY8CPWR01 (8C42344A) 4901552 610910254 CA-Malaysia 96 366 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 125C, 5.5V/38V CY8CLED04DOCD1 (8C42344A) 4835764 610848989 CA-Malaysia 1000 210 0 CY8CLED04D01 (8C42344A) 4845231 610900704 CA-Malaysia 1000 210 0 CY8CLED04G01 (8C42344A) 4851730 610910255 CA-Malaysia 1000 207 0 610851402 CA-Malaysia COMP 88 0 CY8CLED04DOCD1 (8C42344A) 4817222 610833422 CA-Malaysia 1000 90 0 CY8CLED04DOCD1 (8C42344A) 4835764 610851402 CA-Malaysia 1000 82 0 CY8CLED04G01 (8C42344A) 4851730 610910255 CA-Malaysia 1000 80 0 CY8CPWR01 (8C42344A) 4901552 610910254 CA-Malaysia 1000 80 0 STRESS: ENDURANCE, 50K CYCLES CY8CLED04DOCD1 (8C42344A) 4835764 STRESS: DATA RETENTION, 150C STRESS: ESD-HUMAN BODY CIRCUIT PER JEDEC EIA/JESD22-A114-B, 2,200V CY8CLED04DOCD1 (8C42344A) 4835764 610848989 CA-Malaysia COMP 8 0 CY8CLED04D01 (8C42344A) 610900704 CA-Malaysia COMP 8 0 4845231 STRESS: ESD-CHARGE DEVICE MODEL, 500V CY8CLED04DOCD1 (8C42344A) 4835764 610848989 CA-Malaysia COMP 9 0 CY8CLED04D01 (8C42344A) 610900704 CA-Malaysia COMP 9 0 4845231 STRESS: HI-ACCEL SATURATION TEST, 130C, 85%RH, 5.5V/38V, PRE COND 192 HR 30C/60%RH, MSL3 CY8CLED04DOCD1 (8C42344A) 4835764 610848989 CA-Malaysia 128 20 0 CY8CLED04D01 (8C42344A) 4845231 610900704 CA-Malaysia 128 83 0 CY8CLED04G01 (8C42344A) 4851730 610910255 CA-Malaysia 128 80 0 STRESS: PRESSURE COOKER TEST, 121C, 100%RH, 15 Psig, PRE COND 192 HR 30C/60%RH, MSL3 CY8CLED04DOCD1 (8C42344A) 4817222 610833422 CA-Malaysia 168 100 0 CY8CLED04DOCD1 (8C42344A) 4835764 610848989 CA-Malaysia 168 90 0 CY8CLED04D01 (8C42344A) 610900704 CA-Malaysia 168 90 0 4845231 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 8 Document No.001-65517 Rev. *B ECN # 4596444 Reliability Test Data QTP #: 075103 Device Mechanism Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure STRESS: TEMPERATURE CYCLE COND. C, -65C TO 150C, PRE COND 192 HRS 30C/60%RH, MSL3 CY8CLED04D01 (8C42344A) 4817222 610832110 CA-Malaysia 1000 89 0 CY8CLED04DOCD1 (8C42344A) 4835764 610848989 CA-Malaysia 1000 90 0 CY8CLED04D01 (8C42344A) 610900704 CA-Malaysia 1000 90 0 4845231 STRESS: HIGH TEMPERATURE STORAGE, 150C, PRE COND 192 HRS 30C/60%RH, MSL3 CY8CLED04DOCD1 (8C42344A) 4835764 610848989 CA-Malaysia 1000 90 0 500 54 0 STRESS: LOW TEMPERATURE OPERATING LIFE, -30C, 5.5V/38V CY8CLED04G01 (8C42344A) 4851730 610910255 CA-Malaysia STRESS: STATIC LATCH-UP TESTING, 125C, 8.25V/41V, 200mA CY8CLED04D01 (8C42344A) 4845231 610900704 CA-Malaysia COMP 9 0 CY8CLED04D01 (8C42344A) 4845231 610900704 CA-Malaysia COMP 10 0 CY8CLED04G01 (8C42344A) 4851730 610910255 CA-Malaysia COMP 10 0 4817222 610832110 CA-Malaysia COMP 15 0 CY8CLED04DOCD1 (8C42344A) 4835764 610848989 CA-Malaysia COMP 15 0 CY8CLED04D01 (8C42344A) 610900704 CA-Malaysia COMP 15 0 STRESS: AGE BOND STRESS: ACOUSTIC-MSL3 CY8CLED04D01 (8C42344A) 4845231 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 8 Document No.001-65517 Rev. *B ECN # 4596444 Document History Page Document Title: FAB4, CYPRESS Document Number: Rev. ECN No. ** 3094927 *A 4184051 *B 103510: SONOS 4 TECHNOLOGY DERIVATIVE S4AD-HV40 POWER PSOC PHOENIX CMI 001-65517 Orig. of Change HGA HSTO 4596444 HSTO Description of Change Initial spec release Sunset Review Remove “Version 1.0” in front page Removed reference Cypress spec in the reliability test performed table and retained reference Industry standard. Align qualification report based on the new template in the front page Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 8