Document No.001-88006 Rev. *A ECN # 4416191 Cypress Semiconductor Automotive Product Qualification Report QTP# 052805 VERSION *A June 2014 USB EMBEDDED HOST AUTOMOTIVE R52T-3 TECHNOLOGY, FAB4 CY7C67300 EZ-Host™ Programmable Embedded USB Host/Peripheral Controller FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT [email protected] or via a CYLINK CRM CASE Prepared By: Honesto Sintos Reliability Engineer Reviewed By: Zhaomin Ji Reliability Manager Approved By: Richard Oshiro Reliability Director Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 9 Document No.001-88006 Rev. *A ECN # 4416191 PRODUCT QUALIFICATION HISTORY QUAL REPORT 052805 DESCRIPTION OF QUALIFICATION PURPOSE USB Embedded Host Automotive Technology, R52T-3, Fab 4 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 9 DATE COMP. Mar 06 Document No.001-88006 Rev. *A ECN # 4416191 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Qualify USB Embedded Host Automotive Technology, R52T-3, Fab 4 Marketing Part #: CY7C67300 Device Description: EZ-Host ™ Programmable Embedded USB Host/Peripheral Controller Cypress Division: Cypress Semiconductor Corporation – Consumer and Computation Division Overall Die (or Mask) REV Level (pre-requisite for qualification): What ID markings on Die: Rev. A 7C67300A TECHNOLOGY/FAB PROCESS DESCRIPTION Number of Metal Layers: 3 Metal Composition: Metal 1: 500Å TiW / 6000Å Al / 300Å TiW Metal 2: 500Å TiW / 6000Å Al / 300Å TiW Metal 3: 500Å Ti / 8000Å Al / 300Å TiW Passivation Type and Materials: 1000Å SiO2 / 9000Å Si3N4 Free Phosphorus contents in top glass layer (%): 0% Number of Transistors in Device 2,805,388 Number of Logic Gates in Device 76K Generic Process Technology/Design Rule (µ-drawn): CMOS, Triple Metal, 0.25 um Gate Oxide Material/Thickness (MOS): SiO2, 55Å Name/Location of Die Fab (prime) Facility: Cypress Semiconductor - Bloomington, MN Die Fab Line ID/Wafer Process ID: Fab4/R52T-3 PACKAGE AVAILABILITY ASSEMBLY FACILITY SITE PACKAGE 100-Lead TQFP CML-RA,CHINA-JT Note: Package Qualification details available upon request. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 9 Document No.001-88006 Rev. *A ECN # 4416191 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: AZ100 Package Outline, Type, or Name: 100-Pin Thin Quad Flat Pack (TQFP) Mold Compound Name/Manufacturer: Hitachi CEL9200HF9 Mold Compound Flammability Rating: V-O per UL94 Oxygen Rating Index: >28% Lead Frame Material: Copper Lead Finish, Composition / Thickness: Ni-Pd-Au Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: Wafer Saw Die Attach Supplier: Dexter Die Attach Material: QMI 509 Die Attach Method: Epoxy Wire Bond Method: Thermosonic Wire Material/Size: Au, 1.0mil Thermal Resistance Theta JA °C/W: 47.47 Package Cross Section Yes/No: N/A Name/Location of Assembly (prime) facility: CML-R ELECTRICAL TEST / FINISH DESCRIPTION Test Location: CML-RA,KYEC, Taiwan Fault Coverage: 100% Note: Please contact a Cypress Representative for other packages availability Company Confidential A printed copy of this document is considered uncontrolled. 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Page 4 of 9 Document No.001-88006 Rev. *A ECN # 4416191 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS Stress/Test Test Condition (Temp/Bias) High Temperature Operating Life Early Failure Rate High Temperature Operating Latent Failure Rate High Accelerated Saturation Test (HAST) Result P/F Dynamic Operating Condition, Vcc Max = 3.8V, 150°C P Dynamic Operating Condition, Vcc Max= 3.8V, 150°C P 130°C, 3.63V, 85%RH Precondition: JESD22 Moisture Sensitivity MSL 3 P 192 Hrs, 30°C/60%RH+3IR-Reflow, 260°C+0, -5°C MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C Temperature Cycle Precondition: JESD22 Moisture Sensitivity MSL 3 P 192 Hrs, 30°C/60%RH+3IR-Reflow, 260°C+0, -5°C 121°C, 100%RH Pressure Cooker Precondition: JESD22 Moisture Sensitivity MSL 3 P 192 Hrs, 30°C/60%RH+3IR-Reflow, 260°C+0, -5°C High Temperature Storage 150°C ± 5°C No bias Electrostatic Discharge Human Body Model (ESD-HBM) 500V/1000V/1500V/2,000V JESD22, Method A114-B Electrostatic Discharge Charge Device Model (ESD-CDM) 250V/500V/750V (Corner Pins) P P P Ball Shear AEC-Q100-010 P Bond Pull Mil-Std 883, Method 2011 P Electrical Distribution AEC-Q100-009 P Electro Thermal Gate Leakage AEC-Q100-009 P External Visual JESD22-B100 P Physical Dimensions JESD22B100 AND B108 P Solderability JESD22-B102 P Static Latchup 125C, 5.4V, ± 100mA AEC-Q100-004 P Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 9 Document No.001-88006 Rev. *A ECN # 4416191 RELIABILITY FAILURE RATE SUMMARY Stress/Test Device Tested/ Device Hours # Fails Activation Energy Thermal AF3 Failure Rate High Temperature Operating Life Early Failure Rate 2,610 Devices 0 N/A N/A 0 PPM High Temperature Operating Life1,2 Long Term Failure Rate 49,000 HRs 0 0.7 170 FIT** ** Insufficient samples to calculate FIT Rate. 1 2 3 Assuming an ambient temperature of 55°C and a junction temperature rise of 15 °C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. K = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. 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Page 6 of 9 Document No.001-88006 Rev. *A ECN # 4416191 Reliability Test Data QTP #: 052805 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 150C, 3.8V, Vcc Core CY7C67300 (7C67300A) 4450615 610521772 CML-R 24 893 0 CY7C67300 (7C67300A) 4430113 610455932 CML-R 24 864 0 CY7C67300 (7C67300A) 4511259 610530861 CML-R 24 853 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 150C, 3.8V, Vcc Core CY7C67300 (7C67300A) 4450615 610521772 CML-R 408 49 0 CY7C67300 (7C67300A) 4450615 610521772 CML-R 1000 49 0 610521772 CML-R COMP 3 0 610521772 CML-R COMP 3 0 COMP 6 0 COMP 3 0 COMP 3 0 COMP 3 0 CML-R COMP 3 0 STRESS: ESD-CHARGE DEVICE MODEL, 250V CY7C67300 (7C67300A) 4450615 STRESS: ESD-CHARGE DEVICE MODEL, 500V CY7C67300 (7C67300A) 4450615 STRESS: ESD-CHARGE DEVICE MODEL, 750V, corner pins only CY7C67300 (7C67300A) 4450615 610521772 CML-R STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 500V CY7C67300 (7C67300A) 4450615 610521772 CML-R STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 1,000V CY7C67300 (7C67300A) 4450615 610521772 CML-R STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 1,500V CY7C67300 (7C67300A) 4450615 610521772 CML-R STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 2,000V CY7C67300 (7C67300A) 4450615 610521772 STRESS: STATIC LATCH-UP TESTING, 125C, 5.4V, +/100mA CY7C67300 (7C67300A) 4450615 610521772 CML-R COMP 6 0 4450615 610521772 CML-R COMP 5 0 4450615 610521772 CML-R COMP 5 0 CML-R COMP 5 0 STRESS: BALL SHEAR CY7C67300 (7C67300A) STRESS: BOND PULL CY7C67300 (7C67300A) STRESS: POST BOND PULL AFTER TEMP CYCLE CY7C67300 (7C67300A) 4450615 610521772 Company Confidential A printed copy of this document is considered uncontrolled. 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Page 7 of 9 Document No.001-88006 Rev. *A ECN # 4416191 Reliability Test Data QTP #: 052805 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej CY7C67300 (7C67300A) 4450615 610521772 CML-R COMP 1193 0 CY7C67300 (7C67300A) 4430113 610455932 CML-R COMP 919 0 CY7C67300 (7C67300A) 4511259 610530861 CML-R COMP 908 0 Failure Mechanism STRESS: EXTERNAL VISUAL STRESS: ELECTRICAL DISTRIBUTION CY7C67300 (7C67300A) 4450615 610521772 CML-R COMP 30 0 CY7C67300 (7C67300A) 4430113 610455932 CML-R COMP 30 0 CY7C67300 (7C67300A) 4511259 610530861 CML-R COMP 30 0 STRESS: ELECTRO THERMAL GATE LEAKAGE CY7C67300 (7C67300A) 4450615 610521772 CML-R COMP 6 0 CY7C67300 (7C67300A) 4450615 610521772 CML-R COMP 10 0 CY7C67300 (7C67300A) 4430113 610455932 CML-R COMP 10 0 CY7C67300 (7C67300A) 4511259 610530861 CML-R COMP 10 0 CML-R 1000 50 0 STRESS: PHYSICAL DIMENSION STRESS: HIGH TEMPERATURE STORAGE, PLASTIC, 150C CY7C67300 (7C67300A) 4450615 610521772 STRESS: PRESSURE COOKER TEST, 121C, 100%RH, PRE COND 192 HR 30C/60%RH, MSL3 CY7C67300 (7C67300A) 4450615 610521772 CML-R 96 50 0 CY7C67300 (7C67300A) 4450615 610521772 CML-R 168 50 0 STRESS: HI-ACCEL SATURATION TEST, 130C, 85%RH, 3.63V, PRE COND 192 HR 30C/60%RH, MSL3 CY7C67300 (7C67300A) 4450615 610521772 CML-R 96 45 0 CY7C67300 (7C67300A) 4450615 610521772 CML-R 128 44 0 STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH, MSL3 CY7C67300 (7C67300A) 4450615 610521772 CML-R 500 55 0 CY7C67300 (7C67300A) 4450615 610521772 CML-R 1000 50 0 CY7C67300 (7C67300A) 4450615 610521772 CML-R COMP 15 0 CY7C67300 (7C67300A) 4430113 610455932 CML-R COMP 15 0 CY7C67300 (7C67300A) 4511259 610530861 CML-R COMP 15 0 STRESS: SOLDERABILITY Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 9 Document No.001-88006 Rev. *A ECN # 4416191 Document History Page Document Title: QTP # 052805 : USB EMBEDDED HOST AUTOMOTIVE (CY7C67300) R52T-3 TECHNOLOGY, FAB4 Document Number: 001-88006 Rev. ECN Orig. of No. Change ** 4033621 ILZ *A 4416191 HSTO Description of Change Initial Spec Release Qualification report published on Cypress.com is documented on memo HGA-113 and not in spec format. Initiated spec for QTP 052805 and all data from memo# HGA-113 was transferred to qualification report spec template. Deleted package qualification details on package qualification history table. Deleted Cypress reference Spec and replaced with Industry Standards Updated package availability based on current qualified test & assembly site. Align qualification report based on the new template in the front page Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 9