Document No. 001-87793 Rev. ** ECN #: 4018106 Cypress Semiconductor Product Qualification Report QTP# 023302 June 2013 ™ EZ-HOST PROGRAMMABLE EMBEDDED USB HOST/PERIPHERAL CONTROLLER R52T-3 TECHNOLOGY, FAB4 CY7C67300 CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Zhaomin Ji Principal Reliability Engineer (408) 432-7021 Mira Ben-Tzur Quality Engineering Director (408) 943-2675 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 9 Document No. 001-87793 Rev. ** ECN #: 4018106 PRODUCT QUALIFICATION HISTORY Qual Report 023302 Description of Qualification Purpose New Device EZ-Host™ Programmable Embedded USB Host/Peripheral Controller (CY7C67300) Base Die in R52T-3 Technology Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 9 Date Comp Feb 04 Document No. 001-87793 Rev. ** ECN #: 4018106 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: New Device CY7C67300 Base Die in R52T-3 Technology CY7C67300 Marketing Part #: Device Description: EZ-Host™ Programmable Embedded USB Host/Peripheral Controller 3.3V available 100-lead TQFP and 48-ball FBGA Cypress Division: Cypress Semiconductor Corporation – Personal Communications Division (PCD) WA Overall Die (or Mask) REV Level (pre-requisite for qualification): Rev. A 7C67300A What ID markings on Die: TECHNOLOGY/FAB PROCESS DESCRIPTION Number of Metal Layers: 3 Metal Metal 1: 500Å TiW / 6000Å AL / 300Å TiW Metal Composition: Metal 2: 500Å TiW / 6000Å AL / 300Å TiW Passivation Type and Materials: Metal 3: 500Å TiW / 8000Å AL / 300Å TiW TEOS 1K Å, Sin 9k Å Free Phosphorus contents in top glass layer(%): 0% Number of Transistors in Device 2,805,388 Number of Gates in Device 76K Generic Process Technology/Design Rule (drawn): 0.25m Gate Oxide Material/Thickness (MOS): SiO2, 55Å Name/Location of Die Fab (prime) Facility: Cypress Semiconductor -- Bloomington, MN Die Fab Line ID/Wafer Process ID: Fab4/R52T-3 PACKAGE AVAILABILITY PACKAGE 100-lead TQFP 48-ball FBGA ASSEMBLY SITE FACILITY Cypress Philippines (CML-RA) Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 9 Document No. 001-87793 Rev. ** ECN #: 4018106 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: AZ100S Package Outline, Type, or Name: 100 – Lead Thin Quad Flat Package (TQFP) Mold Compound Name/Manufacturer: KE-G6000 / Kyocera Mold Compound Flammability Rating: V-O per UL94 Mold Compound Alpha Emission Rate: 0.001 cph/m2 Oxygen Rating Index: >28% N/A Lead Frame Designation: Reduced Metal Pad Lead Frame Material: Copper Substrate Material: N/A Lead Finish, Composition / Thickness: NiPdAu Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: Wafer saw Die Attach Supplier: Dexter Die Attach Material: QMI 509 Bond Diagram Designation 001-69403 Wire Bond Method: Thermosonic Wire Material/Size: 0.8 mil / Au Thermal Resistance Theta JA C/W: 44.66 C/W Package Cross Section Yes/No: Yes Assembly Process Flow: 11-21099 Name/Location of Assembly (prime) facility: CML-RA MSL Level 3 Reflow Profile 260C ELECTRICAL TEST / FINISH DESCRIPTION Test Location: CML-RA Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 9 Document No. 001-87793 Rev. ** ECN #: 4018106 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT Stress/Te st Test Condition (Temp/Bias ) Result P/F 0 High Temperature Operating Life Early Failure Rate Dynamic Operating Condition, Vcc Max = 3.8V, 125 C Dynamic 0 Operating Condition, Vcc Max = 3.8V, 150 C P 0 High Temperature Operating Life Latent Failure Rate Dynamic Operating Condition, Vcc Max = 3.8V, 125 C Dynamic 0 Operating Condition, Vcc Max = 3.8V, 150 C P 0 High Accelerated Saturation Test (HAST) 130 C 3.63V,85%RH Precondition: JESD22 Moisture Sensitivity MSL 3 192hrs, 30C/60%RH , 220C+5, 0C Reflow P Temperature Cycle MIL-STD-883C, Method 1010, Condition C, -65C to 150C Precondition: JESD22 Moisture Sensitivity MSL 3 192hrs, 30C/60%RH , 220C+5, 0C Reflow P Pressure Cooker 121C, 100%RH Precondition: JESD22 Moisture Sensitivity MSL 3 192hrs, 30C/60%RH , 220C+5, 0C Reflow P High Temperature Storage 150 C, NO BIAS Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V Electrostatic Discharge 2,200V Human Body Model (ESD-HBM) MIL-STD-883, Method 3015.7 Electrostatic Discharge Charge Device Model (ESD-CDM) 500V, JESD22-C101C 0 JESD22, Method A114-B P P P P Acoustic Microscopy, MSL 3 J-STD-020 Precondition: JESD22 Moisture Sensitivity Level 3 P Static Latch-up 125C, 10V, 300mA P In accordance with JEDEC 17 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 9 Document No. 001-87793 Rev. ** ECN #: 4018106 RELIABILITY FAILURE RATE SUMMARY Stress/Te st High Temperature Operating Life Early Failure Rate @125C High Temperature Operating Life Early Failure Rate @150C High Temperature Operating Life1,2 Long Term Failure Rate @150C 1 2 3 Device Tested/ Device Hours Activation Energy Thermal AF4 Failure Rate 1 N/A N/A 483 PPM 4,898 0 N/A N/A 0 PPM 337,828 DHRs 0 0 .7 170 16 FITs 2,069 # Fails Assuming an ambient temperature of 55C and a junction temperature rise of 15C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 1 where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 9 Document No. 001-87793 Rev. ** ECN #: 4018106 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # Ass Loc 023302 Duration Samp Rej COMP 15 0 Failure Mechanism STRESS: ACOUSTIC-MSL3 CY7C67300 (7C67300A) STRESS: 4243325 610307229/30/1 CML-R HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 3.8V, Vcc Max CY7C67300 (7C67300A) 4243325 610307229/30/1 CML-R 96 1022 0 CY7C67300 (7C67300A) 4308967 610324821 96 1047 1 STRESS: CML-R HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 125C, 3.8V, Vcc Max CY7C67300 (7C67300A) 4315341 610324827 CML-R 168 237 0 CY7C67300 (7C67300A) 4315341 610324827 CML-R 500 235 0 CY7C67300 (7C67300A) 4315341 610324827 CML-R 1000 111 0 CY7C67300 (7C67300A) 4308967 610324821 CML-R 168 120 0 CY7C67300 (7C67300A) 4308967 610324821 CML-R 500 120 0 CY7C67300 (7C67300A) 4308967 610324821 CML-R 803 120 0 CY7C67300 (7C67300A) 4325123 610341061 CML-R 168 120 0 CY7C67300 (7C67300A) 4325123 610341061 CML-R 500 120 0 CY7C67300 (7C67300A) 4325123 610341061 CML-R 803 120 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 150C, 3.8V, Vcc Max CY7C67300 (7C67300A) 4243325 610307229/30/1 CML-R 48 399 0 CY7C67300 (7C67300A) 4308967 610324821 CML-R 48 350 0 CY7C67300 (7C67300A) 4325123 610341061 CML-R 48 1044 0 CY7C67300 (7C67300A) 4315341 610324827 CML-R 48 1036 0 CY7C67300 (7C67300A) 4346531 610359501 CML-R 48 2069 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 150C, 3.8V, Vcc Max CY7C67300 (7C67300A) 4243325 610307229/30/1 CML-R 80 120 0 CY7C67300 (7C67300A) 4346531 610359501 CML-R 80 430 0 CY7C67300 (7C67300A) 4346531 610359501 CML-R 226 423 0 CY7C67300 (7C67300A) 4346531 610359501 CML-R 500 416 0 STRESS: METAL SHORT ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 2,200V CY7C67300 (7C67300A) 4243325 610307229/30/1 CML-R COMP 9 0 CY7C67300 (7C67300A) 4315341 610324827 COMP 9 0 CML-R Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 9 Document No. 001-87793 Rev. ** ECN #: 4018106 Reliability Test Data QTP #: Device STRESS: Fab Lot # Assy Lot # Ass Loc 023302 Duration Samp Rej ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,200V CY7C67300 (7C67300A) 4243325 610307229/30/1 CML-R COMP 3 0 CY7C67300 (7C67300A) 4315341 610324827 CML-R COMP 3 0 STRESS: Failure Mechanism ESD-CHARGE DEVICE MODEL, 500V CY7C67300 (7C67300A) 4243325 610307229/30/1 CML-R COMP 9 0 CY7C67300 (7C67300A) 4315341 610324827 COMP 9 0 CML-R STRESS: STATIC LATCH-UP TESTING (125C, 10V, +/-300mA) CY7C67300 (7C67300A) 4243325 610307229/30/1 CML-R COMP 3 0 CY7C67300 (7C67300A) 4315341 610324827 COMP 3 0 CML-R STRESS: HIGH TEMPERATURE STORAGE, 150C, No Bias CY7C67300 (7C67300A) 4243325 610307229/30/1 CML-R 500 48 0 CY7C67300 (7C67300A) 4243325 610307229/30/1 CML-R 1000 48 0 STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 3.6V), PRE COND 168 HR 85C/85%RH CY7C67300 (7C67300A) 4243325 610307229/30/1 CML-R 128 48 0 168 48 0 STRESS: PRESSURE COOKER TEST, 121C, 100%RH), PRE COND 168 HR 85C/85%RH CY7C67300 (7C67300A) STRESS: 4243325 610307229/30/1 CML-R TC COND. C -65C TO 150C, PRECOND 168 HR 85C/85%RH CY7C67300 (7C67300A) 4243325 610307229/30/1 CML-R 300 47 0 CY7C67300 (7C67300A) 4243325 610307229/30/1 CML-R 500 47 0 CY7C67300 (7C67300A) 4243325 610307229/30/1 CML-R 1000 47 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 9 Document No. 001-87793 Rev. ** ECN #: 4018106 Document History Page Document Title: QTP # 023302 : EZ-HOST PROGRAMMABLE EMBEDDED USB HOST/PERIPHERAL CONTROLLER (CY7C76300), R52T-3 TECHNOLOGY, FAB4 Document Number: 001-87793 Rev. ECN Orig. of No. Change ** 4018106 ILZ Description of Change Initial Spec Release Qualification report published on Cypress.com is documented on memo LGQ-50 and not in spec format. Initiated spec for QTP 023302 and data from LGQ-50 was transferred to qualification report spec template. Updated package availability based on current qualified test & assembly site. Deleted previous package assembly information and replaced with existing and qualified assembly site Deleted Cypress reference Spec and replaced with Industry Standards. Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 9