Cypress Semiconductor Product Qualification Report QTP# 023302A VERSION 1.0 May 2004 CY7C67200 EZ-OTG™ Programmable USB On-The-Go Host/Peripheral Controller R52T-3 Technology, Fab4 CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Mira Ben-Tzur Principal Reliability Engineer (408) 943-2675 Cypress Semiconductor EZ-OTGt™ Programmable USB On-The-Go Host/Peripheral Controller Device: CY7C67200 QTP# 023302A V, 1.0 Page 2 of 8 May 2004 TECHNOLOGY QUALIFICATION HISTORY Qual Report 023302A Description of Qualification Purpose New Device EZ-OTGt™ Programmable USB On-The-Go Host/Peripheral Controller (CY7C67200) Base Die in R52T-3 Technology Date Comp Feb 04 Cypress Semiconductor QTP# 023302A V, 1.0 Page 3 of 8 May 2004 EZ-OTGt™ Programmable USB On-The-Go Host/Peripheral Controller Device: CY7C67200 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: New Device of CY7C67200 Base Die in R52T-3 Technology Marketing Part #: CY7C67200 Device Description: EZ-OTGt™ Programmable USB On-The-Go Host/Peripheral Controller 3.3V available 100-lead TQFP and 48-ball FBGA Cypress Division: Cypress Semiconductor Corporation – Personal Communications Division (PCD) WA Overall Die (or Mask) REV Level (pre-requisite for qualification): Rev. A What ID markings on Die: 7C67300A TECHNOLOGY/FAB PROCESS DESCRIPTION – R52T-3 Number of Metal Layers: 3 Metal Metal 1: 500Å TiW / 6000Å AL / 300Å TiW Composition: Metal 2: 500Å TiW / 6000Å AL / 300Å TiW Metal 3: 500Å TiW / 8000Å AL / 300Å TiW Passivation Type and Materials: TEOS 1K Å, Sin 9k Å Free Phosphorus contents in top glass layer(%): 0% Number of Transistors in Device 2,805,388 Number of Gates in Device 76K Generic Process Technology/Design Rule (µ-drawn): 0.25µm Gate Oxide Material/Thickness (MOS): SiO2, 55Å Name/Location of Die Fab (prime) Facility: Cypress Semiconductor -- Bloomington, MN Die Fab Line ID/Wafer Process ID: Fab4/R52T-3 PACKAGE AVAILABILITY PACKAGE 48-ball FBGA ASSEMBLY SITE FACILITY Cypress Philippines (CML-R) Cypress Semiconductor EZ-OTGt™ Programmable USB On-The-Go Host/Peripheral Controller Device: CY7C67200 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: Mold Compound Flammability Rating: A100 100-LD Thin Quad Falt Packs Hitachi Cel9200CY V-O per UL94 Oxygen Rating Index: >28% Lead Frame Material: Copper Lead Finish, Composition / Thickness: Sn 90%- Pb 10% 400u inch Die Backside Preparation Method/Metallization: Backgrinding Die Separation Method: 100% Wafer Saw Die Attach Supplier: Dexter Die Attach Material: QMI 509 Die Attach Method: Epoxy Bond Diagram Designation: 10-04885 Wire Bond Method: Ultrasonic Wire Material/Size: Au, 1.0mil Thermal Resistance Theta JA °C/W: 60.28°C/W Package Cross Section Yes/No: N/A Assembly Process Flow: 11-20005 Name/Location of Assembly (prime) facility: Cypress Philippines (CML-R) ELECTRICAL TEST / FINISH DESCRIPTION Test Location: Cypress Philippines (CML-R) Fault Coverage: N/A QTP# 023302A V, 1.0 Page 4 of 8 May 2004 Cypress Semiconductor QTP# 023302A V, 1.0 Page 5 of 8 May 2004 EZ-OTGt™ Programmable USB On-The-Go Host/Peripheral Controller Device: CY7C67200 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT Stress/Test High Temperature Operating Life Early Failure Rate High Temperature Operating Life Latent Failure Rate High Accelerated Saturation Test (HAST) Test Condition (Temp/Bias) Result P/F Dynamic Operating Condition, Vcc Max = 3.8V, 125°C Dynamic Operating Condition, Vcc Max = 3.8V, 150C P Dynamic Operating Condition, Vcc Max = 3.8V, 125°C Dynamic Operating Condition, Vcc Max = 3.8V, 150C P 130°C, 3.63V,85%RH Precondition: JESD22 Moisture Sensitivity MSL 3 P 192hrs, 30C/60%RH+3IR-Reflow, 220°C+5, 0°C Temperature Cycle MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C Precondition: JESD22 Moisture Sensitivity MSL 3 P 192hrs, 30C/60%RH+3IR-Reflow, 220°C+5, 0°C Pressure Cooker 121°C, 100%RH Precondition: JESD22 Moisture Sensitivity MSL 3 P 192hrs, 30C/60%RH+3IR-Reflow, 220°C+5, 0°C High Temperature Storage 150°C ± 5°C no bias Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V Electrostatic Discharge 2,200V Human Body Model (ESD-HBM) MIL-STD-883, Method 3015.7 Electrostatic Discharge Charge Device Model (ESD-CDM) 500V Acoustic Microscopy, MSL 3 Cypress Spec. 25-00104 P Static Latch-up 125C, 10V, ± 300mA P JESD22, Method A114-B P P P P Cypress Spec. 25-00020 In accordance with JEDEC 17. Cypress Spec. 01-00081 Cypress Semiconductor QTP# 023302A V, 1.0 Page 6 of 8 May 2004 EZ-OTGt™ Programmable USB On-The-Go Host/Peripheral Controller Device: CY7C67200 RELIABILITY FAILURE RATE SUMMARY Stress/Test Device Tested/ Device Hours # Fails Activation Energy Thermal AF4 Failure Rate High Temperature Operating Life Early Failure Rate @125C 2,069 1 N/A N/A 483 PPM High Temperature Operating Life Early Failure Rate @150C 4,898 0 N/A N/A 0 PPM 337,828 DHRs 0 0 .7 170 16 FITs High Temperature Operating Life1,2 Long Term Failure Rate @150C 1 2 3 Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Cypress Semiconductor QTP# 023302A V, 1.0 Page 7 of 8 May 2004 EZ-OTGt™ Programmable USB On-The-Go Host/Peripheral Controller Device: CY7C67200 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # Ass Loc 023302 Duration Samp Rej COMP 15 0 Failure Mechanism STRESS: ACOUSTIC-MSL3 CY7C67300 (7C67300A) 4243325 610307229/30/1 CML-R STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 3.8V, Vcc Max CY7C67300 (7C67300A) 4243325 610307229/30/1 CML-R 96 1022 0 CY7C67300 (7C67300A) 4308967 610324821 96 1047 1 CML-R STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 125C, 3.8V, Vcc Max CY7C67300 (7C67300A) 4315341 610324827 CML-R 168 237 0 CY7C67300 (7C67300A) 4315341 610324827 CML-R 500 235 0 CY7C67300 (7C67300A) 4315341 610324827 CML-R 1000 111 0 CY7C67300 (7C67300A) 4308967 610324821 CML-R 168 120 0 CY7C67300 (7C67300A) 4308967 610324821 CML-R 500 120 0 CY7C67300 (7C67300A) 4308967 610324821 CML-R 803 120 0 CY7C67300 (7C67300A) 4325123 610341061 CML-R 168 120 0 CY7C67300 (7C67300A) 4325123 610341061 CML-R 500 120 0 CY7C67300 (7C67300A) 4325123 610341061 CML-R 803 120 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 150C, 3.8V, Vcc Max CY7C67300 (7C67300A) 4243325 610307229/30/1 CML-R 48 399 0 CY7C67300 (7C67300A) 4308967 610324821 CML-R 48 350 0 CY7C67300 (7C67300A) 4325123 610341061 CML-R 48 1044 0 CY7C67300 (7C67300A) 4315341 610324827 CML-R 48 1036 0 CY7C67300 (7C67300A) 4346531 610359501 CML-R 48 2069 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 150C, 3.8V, Vcc Max CY7C67300 (7C67300A) 4243325 610307229/30/1 CML-R 80 120 0 CY7C67300 (7C67300A) 4346531 610359501 CML-R 80 430 0 CY7C67300 (7C67300A) 4346531 610359501 CML-R 226 423 0 CY7C67300 (7C67300A) 4346531 610359501 CML-R 500 416 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 2,200V CY7C67300 (7C67300A) 4243325 610307229/30/1 CML-R COMP 9 0 CY7C67300 (7C67300A) 4315341 610324827 COMP 9 0 CML-R METAL SHORT Cypress Semiconductor QTP# 023302A V, 1.0 Page 8 of 8 May 2004 EZ-OTGt™ Programmable USB On-The-Go Host/Peripheral Controller Device: CY7C67200 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # Ass Loc 023302 Duration Samp Rej STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,200V CY7C67300 (7C67300A) 4243325 610307229/30/1 CML-R COMP 3 0 CY7C67300 (7C67300A) 4315341 610324827 CML-R COMP 3 0 STRESS: ESD-CHARGE DEVICE MODEL, 500V CY7C67300 (7C67300A) 4243325 610307229/30/1 CML-R COMP 9 0 CY7C67300 (7C67300A) 4315341 610324827 COMP 9 0 CML-R STRESS: STATIC LATCH-UP TESTING (125C, 10V, +/-300mA) CY7C67300 (7C67300A) 4243325 610307229/30/1 CML-R COMP 3 0 CY7C67300 (7C67300A) 4315341 610324827 COMP 3 0 CML-R STRESS: HIGH TEMPERATURE STORAGE, 150C, No Bias CY7C67300 (7C67300A) 4243325 610307229/30/1 CML-R 500 48 0 CY7C67300 (7C67300A) 4243325 610307229/30/1 CML-R 1000 48 0 STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 3.6V), PRE COND 168 HR 85C/85%RH CY7C67300 (7C67300A) 4243325 610307229/30/1 CML-R 128 48 0 168 48 0 STRESS: PRESSURE COOKER TEST, 121C, 100%RH), PRE COND 168 HR 85C/85%RH CY7C67300 (7C67300A) 4243325 610307229/30/1 CML-R STRESS: TC COND. C -65C TO 150C, PRECOND 168 HR 85C/85%RH CY7C67300 (7C67300A) 4243325 610307229/30/1 CML-R 300 47 0 CY7C67300 (7C67300A) 4243325 610307229/30/1 CML-R 500 47 0 CY7C67300 (7C67300A) 4243325 610307229/30/1 CML-R 1000 47 0 Failure Mechanism