Document No.001-88642 Rev. ** ECN # 4083753 Cypress Semiconductor Product Qualification Report QTP# 97476 July 2013 256K Static RAM, R28 Process, Fab 2 Qualification CY7C194/CY7195/CY7C199 32k X 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Zhaomin Ji Principal Reliability Engineer (408) 432-7021 Mira Ben-Tzur Quality Engineering Director (408) 943-2675 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 9 Document No.001-88642 Rev. ** ECN # 4083753 PRODUCT QUALIFICATION HISTORY Qual Report 97476 Description of Qualification Purpose Qualify Fab 2 for 256K SRAM, R28 process ( Rev0. and Rev.R) Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 9 Date Comp Nov. 1997 Document No.001-88642 Rev. ** ECN # 4083753 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Qualify Fab 2 for 256K SRAM, R28 process (Rev O. and Rev. R) Marketing Part #: CY7C199 Package: 28 pins, 300 mil SOJ Device Description 32K x 8 Static RAM Cypress Division: Cypress Semiconductor Corporation - MPD Division V Rev. O and Rev. R Overall Die (or Mask) RE Level (pre-requisite for qualification What ID markings on Die 7C199C TECHNOLOGY/FAB PROCESS DESCRIPTION –R28 Number of Metal Layers 2 Metal Composition: Metal 1: Ti/TiW/Al-Si/TiW, 500Å/1.2KÅ/6KÅ/1.2K Å Metal 2: TiW/Al-Si/TiW, 1.2KÅ/10KÅ/150Å Passivation Type and Materials: 7000A TEOS + 6000A Si2N4 Free Phosphorus contents in top glass layer (%): N/A Die Coating(s), if used: None Number of Transistor in device Number of Gate in device Generic Process Technology /Design Rule (-drawn): Gate Oxide Material/Thickness (MOS):in CMOS, Double Poly, Double Metal /0.65 m You a Name/Location of Die Fab (prime) Facility: Cypress Semiconductor - Round Rock, TX Die Fab Line ID/Wafer Process ID: Fab2/R28 SiO2 / 165 Å . Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 9 Document No.001-88642 Rev. ** ECN # 4083753 PLASTIC PACKAGE / ASSEMBLY DESCRIPTION Package Outline, Type, or Name: 28-pin, 300 mil SOJ Mold Compound Name/Manufacturer: Sumitomo EME-6300H or Nito MP-8000 Lead Frame Material: Copper Alloy 194 Lead Finish, Composition / Thickness: Solder Plated, 90±5%Sn, 10±%Pb Die Attach Area Plating: Silver Spot Die Attach Material: Ablestik 8361 Die Attach Method: Paste Wire Bond Method: Thermosonic Wire Material/Size: Gold / 1.0 mil Assembly Line ID and Process ID: Cypress Philippines (CSPI-R) Omedata, Indonesia (INDNS-O) Note: Please contact a Cypress Representative for other packages availability. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 9 Document No.001-88642 Rev. ** ECN # 4083753 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT Stress/Test Test Condition (Temp/Bias) Result P/F High Temperature Operating Life Dynamic Operating Condition, Vcc = 5.75V, 150C P Latent Failure Rate Dynamic Operating Condition, Vcc = 5.75V, 150C P Read and Record Life Test Dynamic Operating Condition, Vcc = 5.75V, 150C P Long Life Verification Dynamic Operating Condition, Vcc = 5.75V, 150C P Cold Life Test Dynamic Operating Condition, Vcc = 6.5V, -30C P Early Failure Rate High Temperature Operating Life High Temperature Steady State Life Static Operating Condition, Vcc = 5.5V, 150C High Accelerated Saturation Test (HAST) P 140C, 85%RH, 5.5V Precondition: JESD22 Moisture Sensitivity Level 1 P (168 Hrs, 85/85% RH) Temperature Cycle MIL-STD-883C, Method 1010, Condition C, -65C to 150C Precondition: JESD22 Moisture Sensitivity Level 1 P (168 Hrs, 85/85% RH) High Temperature Storage 165C, no bias P Age bond pull MIL STD 883, Method 2011 P Current Density meets the Technology Device P Electrostatic Discharge MIL-STD-883, Method 3015.7 Human Body Model (ESD-HBM) Electrostatic Discharge P JESD22-C101 P Charge Device Model (ESD-CDM) Latchup Sensitivity In accordance with JEDEC 17. Static Latchup Sensitivity Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 9 P Document No.001-88642 Rev. ** ECN # 4083753 RELIABILITY FAILURE RATE SUMMARY Stress/Test Device Tested/ Device Hours High Temperature Operating Life Early Failure Rate3 1,610 Devices High Temperature Operating Life1,2 Long Term Failure Rate 633,360 DHRs 1 2 3 # Fails Activation Energy Thermal3 A.F Failure Rate 0 N/A N/A 0 PPM 0 0 .7 170 9 FIT Assuming an ambient temperature of 55C and a junction temperature rise of 15C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 Where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 9 Document No.001-88642 Rev. ** ECN # 4083753 Reliability Test Data QTP #: 97476 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150C, 5.75V) CY7C199-VC 2734322 519711442D CY7C199-VC 2733142 CY7C199-VC 2733162 STRESS: INDNS-O 48 540 0 619707330/7/8 CSPI-R 48 535 0 619707989 CSPI-R 48 535 0 INDNS-O COMP 3 0 COMP 3 0 ESD-CHARGE DEVICE MODEL CY7C199-VC 2734322 519711442D CY7C199-VC 2733142 619707330/7/8 CSPI-R STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015 CY7C199-VC 2734322 519711442D INDNS-O COMP 3 0 CY7C199-VC 2736541 619708989 CSPI-R COMP 3 0 STRESS: HI-ACCEL SATURATION TEST (140C, 5.5V), PRECOND. 168 HRS 85C/85%RH CY7C199-VC 2733142 619707330/7/8 CSPI-R 128 48 0 CY7C199-VC 2733142 619707330/7/8 CSPI-R 256 48 0 CY7C199-VC 2733162 619707989 CSPI-R 128 45 0 CY7C199-VC 2733162 619707989 CSPI-R 128 50 0 CY7C199-VC 2735410 619708288 CSPI-R 128 45 0 CY7C199-VC 2735410 619708288 CSPI-R 128 48 0 CY7C199-VC 2736541 619708989 CSPI-R 128 47 0 STRESS: HIGH TEMPERATURE STORAGE (165C, NO BIAS) CY7C199-VC 2733142 619707330/7/8 CSPI-R 336 48 0 CY7C199-VC 2733142 619707330/7/8 CSPI-R 500 48 0 CY7C199-VC 2733142 619707330/7/8 CSPI-R 1000 48 0 STRESS: HIGH TEMP STEADY STATE LIFE TEST (150C, 5.50V) CY7C199-VC 2733142 619707330/7/8 CSPI-R 80 81 0 CY7C199-VC 2733142 619707330/7/8 CSPI-R 168 81 0 CY7C199-VC 2736541 619708989 CSPI-R 80 80 0 CY7C199-VC 2736541 619708989 CSPI-R 168 80 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 9 Document No.001-88642 Rev. ** ECN # 4083753 Reliability Test Data QTP #: 97476 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 5.75V) CY7C199-VC 2734322 519711442D CY7C199-VC 2733142 CY7C199-VC INDNS-O 80 540 0 619707330/7/8 CSPI-R 80 535 0 2733142 619707330/7/8 CSPI-R 500 533 0 CY7C199-VC 2733162 619707989 CSPI-R 80 527 0 CY7C199-VC 2733162 619707989 CSPI-R 500 527 0 619707330/7/8 CSPI-R 1000 120 0 619707330/7/8 CSPI-R 500 45 0 STRESS: LONG LIFE VERIFICATION (150C, 5.75V) CY7C199-VC 2733142 STRESS: COLD LIFE TEST (-30C, 6.5V) CY7C199-VC 2733142 STRESS: READ & RECORD LIFE TEST (150C, 5.75V) CY7C199-VC 2733142 619707330/7/8 CSPI-R 48 10 0 CY7C199-VC 2733142 619707330/7/8 CSPI-R 80 10 0 CY7C199-VC 2733142 619707330/7/8 CSPI-R 500 10 0 STRESS: TC COND. C, -65 TO 150C, PRECOND. 168 HRS 85C/85%RH CY7C199-VC 2733142 619707330/7/8 CSPI-R 300 48 0 CY7C199-VC 2733142 619707330/7/8 CSPI-R 1000 48 0 CY7C199-VC 2733162 619707989 CSPI-R 300 50 0 CY7C199-VC 2733162 619707989 CSPI-R 1000 50 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 9 Document No.001-88642 Rev. ** ECN # 4083753 Document History Page Document Title: QTP#97476: 256K Static RAM "CY7C194/CY7195/CY7C199" R28 Process,Fab 2 Qualification Document Number: 001-88642 Rev. ECN Orig. of No. Change ** 4083753 HSTO Description of Change Initial Spec Release Qualification report published on Cypress.com and was transferred to qualification report spec template. Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 9