Preliminary Qualification Report July, 1994 QTP# 94046 Version 1.0 HOTLink Receiver CY7B933 CY7B9331 PAGE 3 CYPRESS SEMICONDUCTOR PRODUCT DESCRIPTION (for qualification) Information provided in this document is intended for generic qualification and technically describes the Cypress part supplied: Marketing Part #: CY7B933 Device Description: HOTLink Receiver Cypress Division: Cypress Semiconductor Corporation, DCOM Group Overall Die (or Mask) REV Level (pre-requisite for qualification): Die Size (stepping): 126 mils x 131 mils Rev. A What ID markings on Die: 7B933A Cypress Qualification completion/Marketing Availability Dates (Current REV): Q294 Q194 TECHNOLOGY/FAB PROCESS DESCRIPTION Number of Metal Layers: 2 Metal Composition: Passivation Type and Materials: 3,000A Tox & 1.5µ of Oxynitride Free Phosphorus contents in top glass layer(%): Die Coating(s), if used: 3% Polyimide Generic Process Technology/Design Rule (µ-drawn): Gate Oxide Material/Thickness (MOS): Name/Location of Die Fab (prime) Facility: Die Fab Line ID/Wafer Process ID: Metal 1: Ti/TiW,1%SiAl Metal 2: Ti, 1%SiAl Single Poly, Double Metal / 0.8µm BiCMOS SiO2/165A Cypress Semiconductor, Round Rock, Tx (Fab 2) Fab 2 / SM1 PAGE 4 CYPRESS SEMICONDUCTOR PLASTIC PACKAGE/ASSEMBLY DESCRIPTION Package Outline, Type, or Name: 28-pin Square Plastic Leaded Chip Carrier (PLCC) Die to Package edge clearance: 162 mils per side Mold Compound Name/Manufacturer: Lead Frame material: Sumitomo EME-6300H(R) Copper Alloy 151 Lead Finish, composition: Solder Plated 85%Sn, 20%Pb Die Attach Area Plating: Ag Die Attach Pad Dim: 200 mils x 200 mils Die Attach Method: Epoxy Die Attach Material: Ablestik 84-1LMI Wire Bond Method: Thermosonic Wire Material/Size: Gold / 1.3 mil Name/Location of Assembly (prime) facility: ANAM, Korea Assembly Line ID and Process ID: Korea-A / J28SE HERMETIC PACKAGE/ASSEMBLY DESCRIPTION Package Outline, Type, or Name: 28-pin Square Leadless Chip Carrier (LCC) Die to Package edge clearance: 158 mils per side Mold Compound Name/Manufacturer: Lead Frame material: N/A N/A Lead Finish, composition: Die Attach Area Plating: Solder Dip Au Die Attach Pad Dim: 200 mils x 200 mils Die Attach Method: Silver Glass Die Attach Material: Silver Glass Wire Bond Method: Ultrasonic Wire Material/Size: Al / 1.25 mil Name/Location of Assembly (prime) facility: Assembly Line ID and Process ID: Cypress Bangkok, Thailand ALPHA-X / L28SJ PAGE 5 CYPRESS SEMICONDUCTOR OTHER INFORMATION For approval by similarity, identify other devices using the same basic die with bonding or metal mask options or test selections and explain: N/A If Cypress is planning any changes in the near future, identify change (Qtr/Yr) in: 4Q93 Die Design Rev./Shrink: Die Process Change: None Fab/Assembly site change: Cross Licensee/Licensor: None Other Devices to be qualified in this technology: None Other Packages to be qualified for this device: PDIP Dry Bake required: Yes ESD Voltage Rating (per MIL STD-008, Method 3018): > 2,200V Flammability Classification (UL-94V): None Alternate Fab/Assembly Locations: Anam, Korea Omedata, Indonesia Please attach the following Qualification / Reliability data for the die revision and Package type, for the fab and assembly sites identified above (mark [X] if included): 1 X HAST (5.5V, 140°C, 85%RH, 15psig) 8 X Operating Life at (temp): Temperature Cycles (-40°C to 125°C) 9 X Steady State Life (HTSSL, 5.25V, 150°C) Temperature Cycles (-65°C to 150°C) 10 4 Data Retention Bake, Plastic (185°C) 11 X Latchup Testing 5 Data Retention Bake, Hermetic (250°C) 12 X Other: Input/Output Capacitance Current Density 2 3 X 6 X Autoclave (PCT, 121°C, 100%RH) 13 7 X ESD Tests (MIL-STD 883, method 3015) 14 125°C Temperature Humidity Bias (5.5V, 85°C, 85%RH) PAGE 6 CYPRESS SEMICONDUCTOR PRODUCT INFORMATION FOR QUALIFICATION BY SIMILARITY Product Family: HOTLink Transmitter/Receiver Mfg Division: DCOM, Cypress Semiconductor Supplier's Part Number Rated Speed Pkg Size/ Type Die Revision Die Size mil x mil (stepping) Design Rule (µ µ) Fabrication Passivation Mold Assembly Type Compound Line Location ESD Volt Availability Rating (mm/yy) Plasma Ox + Oxynitride >2,200V HBM Process Line ID ID CY7B933 CY7B933 CY7B933 -**JC/JI -**PC/PI -**LC 28-pin PLCC 28-pin PDIP 28 pin LCC A 126 x 131 0.8µ SM13B Sumitomo AnamKorea, CypressThailand Q294 PAGE 7 CYPRESS SEMICONDUCTOR DEVICE RELIABILITY SUMMARY Device Type(s): Pkg Description: CY7B933 28-pins PLCC 28-pins LCC Wafer Fab: Assembly: Fab 2 - Round Rock, TX Anam - Korea Anam - Korea High Temperature Dynamic Operating Life (HTOL, 5.5V, 150°C) - Early Failure Rate Device Assy Lot# Fab Lot # 48 Hours Cumulative CY7B933-JC CY7B933-JC 49307176 49404029 2342542 2405878 0/546 0/507 0/1053 High Temperature Dynamic Operating Life (HTOL, 5.5V, 150°C) - Latent Failure Rate Device Assy Lot# Fab Lot # 80 Hours 500 Hours Cumulative CY7B933-JC 49307176 2342542 0/120 0/120 0/240 CY7B933-JC 49404029 2405878 0/120 0/120 High Temperature Steady State Life Test (HTSSL, 5.75V, 150°C) Device Assy Lot # Fab Lot # 168 Hours Cumulative CY7B933-JC 49404029 2405878 0/78 0/156 CY7B933-JC 49307176 2342542 0/78 Temperature Cycle (Condition C, -65°C to 150°C) Device Assy Lot # Fab Lot # CY7B933-JC CY7B933-JC 49404075 49307176 2405878 2342542 100 Cycles 1/93 1 300 Cycles 1000 Cumulative 0/49 0/92 0/49 0/92 1/142 Autoclave (PCT, No bias, 121°C, 100% RH, 15 psig) Device Assy Lot# Fab Lot # 168 Hours Cumulative CY7B933-JC 49404075 2405878 0/47 0/95 1 Topside crack PAGE 8 CY7B933-JC CYPRESS SEMICONDUCTOR 49307176 2342542 0/48 DEVICE RELIABILITY SUMMARY Device Type(s): Pkg Description: CY7B933 28-pins PLCC 28-pins LCC Wafer Fab: Assembly: Fab 2 - Round Rock, TX Anam - Korea Anam - Korea High Accelerated Saturation Test (HAST, 5.5V, 140°C, 85% RH, 15 psig) Device Assy Lot# Fab Lot # 128 Hours Cumulative CY7B933-JC CY7B933-JC 49404075 49397176 2405878 2342542 0/47 0/48 0/95 Group C, Subgroup 1, Life Test (HTOL, 5.75V, 150°C) Device Assy Lot# Fab Lot # 184 Hours Cumulative CY7B933-LMB 219401302 2342542 0/80 0/80 Read & Record Life Test ( 5.75V, 150°C) Device Assy Lot# Fab Lot # 48 Hours 80 Hours 500 Hours Cumulative CY7B933-JC 49307176 2342542 0/10 0/10 0/10 0/10 PAGE 9 CYPRESS SEMICONDUCTOR DEVICE RELIABILITY SUMMARY Device Type(s): Pkg Description: CY7B933 28-pins PLCC 28-pins LCC Wafer Fab: Assembly: Fab 2 - Round Rock, TX Anam - Korea Anam - Korea HOTLink Receiver CY7B933 Electrostatic Discharge Human Body Model Circuit per Mil Std 883, Method 3015 > +2200V Unit 1 > -2200V > +2200V Unit 2 > -2200V > +2200V Unit 3 > -2200V (Highest passing voltage, +10% Guard-banded) Latchup Testing to Cypress Internal Latch-up Procedure Current Injection = 200mA Trigger Hot Socket = VCC 0 - 8V Temp = 125°C Other miscellaneous tests Input/Output capacitance : Passed Current Density : Passed Other qualifications that affect this product family or process Qual Nbr 92471 93092 Qualification Description CY7B923 Hotlink Fab1 Qual CY7B933 Hotlink Fab1 Qual PAGE 10 CYPRESS SEMICONDUCTOR CYPRESS QUALIFICATION REPORT Marketing Part: Process ID: Cypress Test No. CY7B923/933 Prod. Family: SM1 Stress/Test Technology: DCOM Completion Date: January, 1994 BiCMOS Process Location: Fab - San Jose, CA Reference Method Actual Conditions Status * Temp/Bias Hrs/Cyc SS/Fail Qualification Data Reference Test Result Pass 22 HTOL - EFR 29-00020 150C/5.75 48 Hrs 0/3451 C 92471/93092 X 22A HTOL - LFR 29-00020 150C/5.75V 80 Hrs 500 Hrs 0/754 0/633 C 92471/93092 X 36 High Temp. Bake/DRET 23 HAST 25-00063 140C/5.5V 128 Hrs 0/138 C 92471/93092 X 24 Steam Test/Autoclave/PCT 25-00047 121C,100%RH 15 psig 168 Hrs 0/139 C 92471/93092 X 12 Temperature Cycle JEDEC22, Cond. B --40C to 125C 300 Cycs 1000 Cycs 0/139 0/139 C 92471/93092 X 12 Temperature Cycle Cond. C -65C to 150C 100 Cycs 1000 Cycs 0/45 0/45 C 92471/93092 X HTSSL 29-00020 150C, 5.75V 80 Hrs 168 Hrs 0/432 0/306 C 92471/93092 X C 92471/93092 X C 92471/93092 X C 92471/93092 X 37A 20 Mechanical Sequence 26 X-Ray 6 ESD-HBM Corner Pins Internal Pins ---- 6 ESD-CDM Corner Pins Internal Pins ---- 33 Latch-up 50 Flammability & Oxygen Index 14 Moisture Resistance 9 Internal Water Vapor 2 Solvent Resistance 4 Internal Visual 1 Physical Dimensions 7 Lead Integrity 5 Bond Strength 29 Die Shear Strength 11 Lid Torque Fail