Cypress Semiconductor Technology Qualification Report QTP# 031102 VERSION 4.0 June 2004 R8LD-1.8 Technology, Fab4 High Performance Static SRAM CY62155DV-2XWI CY62155DV18 CY62157DV CY62157DV18 CY62157DV20 CY62157DV18 MoBL2™ CY62157DV20 MoBL2™ 8M (512K x 16) Static RAM MoBL2™ and More Battery Life™ is trademark of Cypress Semiconductor CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Rene Rodgers Principal Reliability Engineer (408) 943-2732 Cypress Semiconductor 8Meg, MoBL2, Static SRAM Device CY62155DV*, R8LD-1.8, Fab 4 QTP # 031102 V, 4.0 Page 2 of 10 June 2004 TECHNOLOGY QUALIFICATION HISTORY Qual Report Description of Qualification Purpose Date Comp 031102 New Technology R8LD-1.8V / New Device, 8Meg, MoBL Static RAM CY62155DV* and family Mar 03 030502 MM2E New Process/Recipe for CY62155DV* and family, R8LD-1.8 Technology July 03 031806 Polyimide Process change (HD8000) on Ram8 Wafers Apr 04 Cypress Semiconductor 8Meg, MoBL2, Static SRAM Device CY62155DV*, R8LD-1.8, Fab 4 QTP # 031102 V, 4.0 Page 3 of 10 June 2004 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Qualify New MM2E Recipe for R8LD-1.8V, Fab 4 on CY62155DV* device and family. Marketing Part #: CY62155DV*, CY62157DV, CY62157DV18, CY62157DV20 Device Description: 1.65V – 2.2V, Industrial available in 48-ball FBGA package. Cypress Division: Cypress Semiconductor Corporation –Memory Product Division (MPD) Overall Die (or Mask) REV Level (pre-requisite for qualification): Rev. D What ID markings on Die: 7C62355D TECHNOLOGY/FAB PROCESS DESCRIPTION – RAM8LD-1.8 Number of Metal Layers: 2 Metal Metal 1: Ti 100 Å, Al 3200 Å, TiW 300 Å Composition: Metal 2: Ti 300 Å, Al 8000 Å 0.5% Cu, TiW 300 Å Passivation Type and Materials: 1000Å TEOS / 9000Å Si3N4 Free Phosphorus contents in top glass layer(%): N/A Number of Transistors in Device ~48million Number of Gates in Device ~48 million Generic Process Technology/Design Rule (µ-drawn): CMOS Double Metal/0.13 µm Gate Oxide Material/Thickness (MOS): 32Å Name/Location of Die Fab (prime) Facility: Cypress Semiconductor -- Bloomington, MN Die Fab Line ID/Wafer Process ID: Fab4/RAM8NLD-1.8V PACKAGE AVAILABILITY PACKAGE 48-ball FBGA ASSEMBLY SITE FACILITY TAIWN-G Note: Package Qualification details upon request Cypress Semiconductor 8Meg, MoBL2, Static SRAM Device CY62155DV*, R8LD-1.8, Fab 4 QTP # 031102 V, 4.0 Page 4 of 10 June 2004 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: Mold Compound Flammability Rating: BA48 48-ball Fine Pitch Ball Grid Array (FBGA) PLASKON SMT-B1-LAS V-O per UL94 Oxygen Rating Index: >28% Substrate Material: BT Resin Lead Finish, Composition / Thickness: Solder Ball, 63%Sn, 37%Pb Die Backside Preparation Method/Metallization: N/A Die Separation Method: Wafer Saw Die Attach Supplier: Ablestik Die Attach Material: Ablestik 8355F Die Attach Method: Epoxy Bond Diagram Designation: 10-04689 Wire Bond Method: Thermosonic Wire Material/Size: Au, 1.0um Thermal Resistance Theta JA °C/W: 55°C/W Package Cross Section Yes/No: N/A Assembly Process Flow: 49-41020 Name/Location of Assembly (prime) facility: ASE Taiwan ELECTRICAL TEST / FINISH DESCRIPTION Test Location: USA-C, CML-R Fault Coverage: 100% Cypress Semiconductor 8Meg, MoBL2, Static SRAM Device CY62155DV*, R8LD-1.8, Fab 4 QTP # 031102 V, 4.0 Page 5 of 10 June 2004 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT Stress/Test Test Condition (Temp/Bias) Result P/F Dynamic Operating Condition, Vcc Max = 2.4V, 125°C P Dynamic Operating Condition, Vcc Max = 2.4V, 150°C P High Temperature Steady State Life Static Operating Condition, Vcc Max = 2.2V, 150°C P High Accelerated Saturation Test (HAST) 130°C, 2.2V,85%RH Precondition: JESD22 Moisture Sensitivity MSL 3 P High Temperature Operating Life Early Failure Rate High Temperature Operating Life Latent Failure Rate 192 Hrs, 30C/60%RH+3IR-Reflow, 235°C+5, 0°C Temperature Cycle MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C Precondition: JESD22 Moisture Sensitivity MSL3 P 192 Hrs, 30C/60%RH+3IR-Reflow, 235°C+5, 0°C Pressure Cooker 121°C, 100%RH Precondition: JESD22 Moisture Sensitivity MSL 3 P 192 Hrs, 30C/60%RH+3IR-Reflow, 235°C+5, 0°C High Temperature Storage 150°C ± 5°C no bias Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V Age Bond Strength 200C, 4HRS MIL-STD-883, Method 3015.7 P P P MIL-STD-883, Method 883-2011 Low Temperature Operating Life -30C, 2.35V, 8MHZ P Acoustic Microscopy, MSL 3 Cypress Spec. 25-00104 P Dynamic Latch-up 125C, 3.55V P Static Latch-up 125C, 6.5V, ± 300mA P In accordance with JEDEC 17. Cypress Spec. 01-00081 Cypress Semiconductor 8Meg, MoBL2, Static SRAM Device CY62155DV*, R8LD-1.8, Fab 4 QTP # 031102 V, 4.0 Page 6 of 10 June 2004 RELIABILITY FAILURE RATE SUMMARY Stress/Test High Temperature Operating Life Early Failure Rate High Temperature Operating Life1,2, Long Term Failure Rate 1 2 3 Device Tested/ Device Hours # Fails Activation Energy Thermal AF4 Failure Rate 16,244 2 N/A N/A 123 PPM 573,280 DHRs 0 0.7 170 9 FIT Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Cypress Semiconductor 8Meg, MoBL2, Static SRAM Device CY62155DV*, R8LD-1.8, Fab 4 QTP # 031102 V, 4.0 Page 7 of 10 June 2004 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # 031102 Ass Loc Duration Samp Rej Failure Mechanism STRESS: ACOUSTIC-MSL3 CY62157DV20 (7C62357D) 4151609 610205573N TAIWN-G COMP 20 0 CY62157DV20 (7C62357D) 4205767 610210027 TAIWN-G COMP 20 0 CY62157DV20 (7C62357D) 4210625 610216786N1 TAIWN-G COMP 20 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 2.4V, Vcc Max CY62157DV20 (7C62357D) 4247883 610303398 TAIWN-G 96 1390 0 CY62157DV20 (7C62357D) 4230988 610240982N TAIWN-G 96 1191 0 CY62157DV20 (7C62357D) 4151609 610205573N TAIWN-G 72 1109 0 CY62157DV20 (7C62357D) 4205767 610210027 TAIWN-G 72 8581 CY62157DV20 (7C62357D) 4210625 610216786N1 TAIWN-G 72 1103 1 CY62157DV20 (7C62357D) 4214343 610221185 TAIWN-G 72 834 0 POLY PARTICLE STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 150C, 2.4V, Vcc Max CY62157DV20 (7C62357D) 4222101 610234320 TAIWN-G 80 416 0 CY62157DV20 (7C62357D) 4222101 610234320 TAIWN-G 500 383 0 CY62157DV20 (7C62357D) 4230988 610240982N TAIWN-G 80 418 0 CY62157DV20 (7C62357D) 4230988 610240982N TAIWN-G 500 415 0 CY62157DV20 (7C62357D) 4214343 610221185 TAIWN-G 80 410 0 CY62157DV20 (7C62357D) 4214343 610221185 TAIWN-G 500 330 0 STRESS: HIGH TEMP STEADY STATE LIFE TEST, 150C, 2.2V, Vcc MAX CY62157DV20 (7C62357D) 4151609 610205573N TAIWN-G 80 80 0 CY62157DV20 (7C62357D) 4151609 610205573N TAIWN-G 180 74 0 STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,200V CY62157DV20 (7C62357D) 4151609 610205573 TAIWN-G COMP 9 0 CY62157DV20 (7C62357D) 4205767 610210027 TAIWN-G COMP 9 0 CY62157DV20 (7C62357D) 4210625 610216786 TAIWN-G COMP 9 0 CY62157DV20 (7C62357D) 4215571 610222767N TAIWN-G COMP 9 0 CY62157DV20 (7C62357D) 4216781 610223553 TAIWN-G COMP 9 0 STRESS: ESD-CHARGE DEVICE MODEL, 500V CY62157DV20 (7C62357D) 4215571 610222767N TAIWN-G COMP 9 0 CY62157DV20 (7C62357D) 4214343 610221278 TAIWN-G COMP 9 0 CY62157DV20 (7C62357D) 4216781 610223553 TAIWN-G COMP 9 0 TAIWN-G COMP 3 0 STRESS: DYNAMIC LATCH-UP TESTING, 125C, 3.55V CY62157DV20 (7C62357D) 4205767 610210027 NON-VISUAL Cypress Semiconductor 8Meg, MoBL2, Static SRAM Device CY62155DV*, R8LD-1.8, Fab 4 QTP # 031102 V, 4.0 Page 8 of 10 June 2004 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # 031102 Ass Loc Duration Samp Rej STRESS: STATIC LATCH-UP TESTING, 125C, 6.5V, ±300mA CY62157DV20 (7C62357D) 4151609 610205573 TAIWN-G COMP 3 0 CY62157DV20 (7C62357D) 4205767 610210027 TAIWN-G COMP 3 0 CY62157DV20 (7C62357D) 4210625 610216786 TAIWN-G COMP 3 0 TAIWN-G 500 50 0 STRESS: LOW TEMPERATURE OPERATING LIFE, -30C, 2.35V CY62157DV20 (7C62357D) STRESS: 4151609 610205573 HIGH TEMPERATURE STORAGE, 150C CY62157DV20 (7C62357D) 4151609 610205573N TAIWN-G 500 50 0 CY62157DV20 (7C62357D) 4151609 610205573N TAIWN-G 1000 50 0 STRESS: AGE BOND STRENGTH CY62157DV20 (7C62357D) 4151609 610205573 TAIWN-G COMP 5 0 CY62157DV20 (7C62357D) 4205767 610210027 TAIWN-G COMP 5 0 CY62157DV20 (7C62357D) 4210625 610216786 TAIWN-G COMP 5 0 STRESS: PRESSURE COOKER TEST, 121C, 100%RH, PRE COND 192 HR 30C/60%RH, MSL3 CY62157DV20 (7C62357D) 4151609 610205573N TAIWN-G 176 50 0 CY62157DV20 (7C62357D) 4205767 610210027 TAIWN-G 176 50 0 CY62157DV20 (7C62357D) 4210625 610216786N1 TAIWN-G 168 50 0 STRESS: HI-ACCEL SATURATION TEST, 130C, 85%RH, 1.98V, PRE COND 192 HR 30C/60%RH, MSL3 CY62157DV20 (7C62357D) 4151609 610205573 TAIWN-G 128 50 0 CY62157DV20 (7C62357D) 4205767 610210027 TAIWN-G 128 48 0 CY62157DV20 (7C62357D) 4210625 610216786 TAIWN-G 128 59 0 STRESS: TC COND. C -65C TO 150C, PRECONDITION 192 HRS 30C/60%RH, MSL3 CY62157DV20 (7C62357D) 4151609 610205573N TAIWN-G 300 40 0 CY62157DV20 (7C62357D) 4205767 610210027 TAIWN-G 300 50 0 CY62157DV20 (7C62357D) 4210625 610216786N1 TAIWN-G 300 50 0 Failure Mechanism Cypress Semiconductor 8Meg, MoBL2, Static SRAM Device CY62155DV*, R8LD-1.8, Fab 4 QTP # 031102 V, 4.0 Page 9 of 10 June 2004 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # Ass Loc 030502 Duration Samp Rej STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 2.4V, Vcc Max CY62157DV20 (7C62357D) 4246699 610306905 TAIWN-G 168 2338 0 CY62157DV20 (7C62357D) 4246699 610306904 TAIWN-G 168 2348 0 CY62157DV20 (7C62357D) 4246700 610310110 TAIWN-G 168 2490 0 CY62157DV20 (7C62357D) 4246700 610310111 TAIWN-G 168 2583 0 STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,200V CY62157DV20 (7C62357D) 4246700 610310110 TAIWN-G COMP 9 0 CY62157DV20 (7C62357D) 4246700 610310111 TAIWN-G COMP 9 0 Failure Mechanism Cypress Semiconductor 8Meg, MoBL2, Static SRAM Device CY62155DV*, R8LD-1.8, Fab 4 QTP # 031102 V, 4.0 Page 10 of 10 June 2004 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # Ass Loc 4314972 610337825 TAIWN-G CY62157DV18LL (7R62357D) 4316374 610328357 CY62157DV18LL (7R62357D) 4316374 CY62157DV18LL (7R62357D) 031806 Duration Samp Rej COMP 15 0 TAIWN-G COMP 10 0 610328358 TAIWN-G COMP 10 0 4313929 610328359 TAIWN-G COMP 10 0 CY62157DV18LL (7R62357D) 4316374 610328357 TAIWN-G COMP 10 0 CY62157DV18LL (7R62357D) 4316374 610328358 TAIWN-G COMP 10 0 CY62157DV18LL (7R62357D) 4313929 610328359 TAIWN-G COMP 10 0 CY62157DV18LL (7R62357D) 4316374 610328357 TAIWN-G COMP 5 0 CY62157DV18LL (7R62357D) 4313929 610328359 TAIWN-G COMP 5 0 STRESS: ACOUSTIC, MSL3 CY62167DV30LL (7C62167D) STRESS: BALL SHEAR STRESS: BOND PULL STRESS: INTERNAL VISUAL STRESS: HI-ACCEL SATURATION TEST, 130C, 85%RH, 3.6V, PRE COND 192 HR 30C/60%RH, MSL3 CY62167DV30LL (7C62167D) 4314972 610337825 TAIWN-G 128 48 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 2.4V, Vcc Max CY62157DV18LL (7R62357D) 4316374 610328357 TAIWN-G 96 2211 0 STRESS: PRESSURE COOKER TEST, 121C, 100%RH, PRE COND 192 HR 30C/60%RH, MSL3 CY62157DV18LL (7R62357D) 4337530 610356013 TAIWN-G 168 49 0 CY62157DV18LL (7R62357D) 4337530 610356014 TAIWN-G 168 48 0 CY62167DV30LL (7C62167D) 4314972 610337825 TAIWN-G 168 50 0 STRESS: TC COND. C -65C TO 150C, PRECONDITION 192 HRS 30C/60%RH, MSL3 CY62157DV18LL (7R62357D) 4337530 610356013 TAIWN-G 300 48 0 CY62157DV18LL (7R62357D) 4337530 610356013 TAIWN-G 500 47 0 CY62157DV18LL (7R62357D) 4337530 610356013 TAIWN-G 1000 46 0 CY62157DV18LL (7R62357D) 4337530 610356014 TAIWN-G 300 46 0 CY62157DV18LL (7R62357D) 4337530 610356014 TAIWN-G 500 46 0 CY62157DV18LL (7R62357D) 4337530 610356014 TAIWN-G 1000 46 0 CY62167DV30LL (7C62167D) 4314972 610337825 TAIWN-G 300 50 0 CY62167DV30LL (7C62167D) 4314972 610337825 TAIWN-G 500 48 0 CY62167DV30LL (7C62167D) 4314972 610337825 TAIWN-G 1000 48 0 Failure Mechanism