Cypress Semiconductor Qualification Report QTP# 95515/96024 Version 3.0 July, 2003 64K SRAM, RAM28 TECHNOLOGY MARKETING PART NUMBER DEVICE DESCRIPTION CY7C185/186 8K x 8 Static RAM, OE & CE, Common I/O CY6264 8K x 8 Static RAM, OE & CE, Common I/O CY7C161/162 16K x 4 Static RAM, OE & CE, Separate I/O CY7C164 16K x 4 Static RAM, no OE, Common I/O CY7C166 16K x 4 Static RAM, OE & CE, Common I/O CY7C187 64K x 1 Static RAM, no OE, Separate I/O CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Director (408) 432–7069 Rene Rodgers Reliability Engineering (408) 943-2732 PRODUCT DESCRIPTION (for qualification) Information provided in this document is intended for generic qualification and technically describes the Cypress part supplied: Marketing Part #: CY7C185 Package: 28-pin, 300-mil SOJ Device Description: 8K x 8 Static RAM (R28 process, 256K SRAM Chop) Cypress Division: Cypress Semiconductor Corporation Overall Die (or Mask) REV Level (pre-requisite for qualification): What ID markings on Die: Rev. L 7C185C TECHNOLOGY/FAB PROCESS DESCRIPTION - R28 Number of Metal Layers: 2 Metal Composition: Passivation Type and Materials: 7000A TEOS + 6000A Si2N4 Free Phosphorus contents in top glass layer(%): Die Coating(s), if used: Name/Location of Die Fab (prime) Facility: Die Fab Line ID/Wafer Process ID: N/A Polyimide Generic Process Technology/Design Rule (µ-drawn): Gate Oxide Material/Thickness (MOS): Metal 1: Ti/TiW/Al-Si/TiW, 500A/1.2KA/6KA/1.2KA Metal 2: TiW/Al-Si/Ti, 1.2KA/10KA/150A CMOS, Double Poly, Double Metal /0.65 µm SiO2 / 165 A Cypress Semiconductor - Bloomington, MN Fab3/R28 CYPRESS SEMICONDUCTOR PAGE 3 PLASTIC PACKAGE/ASSEMBLY DESCRIPTION Package Outline, Type, or Name: 28-pin, 300-mil SOJ Mold Compound Name/Manufacturer: Lead Frame material: Sumitomo EME-6300H(R) Copper Lead Finish, composition: Solder Plated, 85%Sn, 15%Pb Die Attach Area Plating: Silver Spot Die Attach Method: Paste Die Attach Material: Silver Epoxy Wire Bond Method: Thermosonic Wire Material/Size: Gold / 1.3 mil JESD22-A112 Moisture Sensitivity Level: Level 1 Name/Location of Assembly (prime) facility: Cypress Bangkok, Thailand (ALPHA-X) Note: Please contact a Cypress Representative for other package availability. CYPRESS SEMICONDUCTOR PAGE 4 RELIABILITY TESTS PERFORMED Stress/Test Test Condition (Temp/Bias) Result P/F Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V MIL-STD-883, Method 3015.7 P Electrostatic Discharge Charge Device Model (ESD-CDM) 2,000V Cypress Spec. 25-00020 P Latchup Sensitivity In accordance with JEDEC 17. Cypress Spec. 01-00081 P Sort Yields Yield = 87.5% (based on lot average of 2200 and 2514 gross die per wafer P Class Yield Yield = 98.3% (6471/6538) P CYPRESS SEMICONDUCTOR PAGE 5 DEVICE RELATED RELIABILITY TEST DATA QTP#: 953111 DEVICE ASSY-LOC ================== ======== FABLOT# ======== ASSYLOT# DURATION ============== ======== S/S ==== Rej Fail Mode === ================================ STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150C, 5.75V) CY7C185-XVC ALPHA-X 3527562 219511700 48 755 0 -------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------STRESS: HI-ACCEL SATURATION TEST (140C, 85%RH, 5.5V), PRECONDITION 48 HRS PCT CY7C185-XVC ALPHA-X 3527562 219511700 128 54 0 ---------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------STRESS: HIGH TEMP STEADY STATE LIFE TEST (150C, 5.75V) CY7C185-XVC ALPHA-X 3527562 219511700 80 81 0 CY7C185-XVC ALPHA-X 3527562 219511700 168 81 0 ------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 5.75V) CY7C185-XVC ALPHA-X 3527562 219511700 80 135 0 CY7C185-XVC ALPHA-X 3527562 219511700 500 135 0 ------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------STRESS: PRESSURE COOKER TEST (121C, 100%RH) CY7C185-XVC ALPHA-X 3527562 219511700 168 52 0 ------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------STRESS: TEMP CYCLE, COND. C, -65 TO 150C, PRECONDITION 48 HRS PCT CY7C185-XVC ALPHA-X 3527562 219511700 300 54 0 CY7C185-XVC ALPHA-X 3527562 219511700 1000 54 0 ------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------- 1 Qtp # 95311, 64K SRAM, 7C185 Rev. K, R28 process. CYPRESS SEMICONDUCTOR PAGE 6 DEVICE RELATED RELIABILITY TEST DATA QTP#: 960242 DEVICE ============ ASSY-LOC ========== FABLOT# ASSYLOT# ========== ============ DURATION S/S REJ ========= ==== === FAIL MODE ================================ STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150C, 5.75V) CY7C185-XVCB ALPHA-X 3546099 219600563 48 5179 0 CY7C185-XVCB ALPHA-X 3547225 219600565 48 5280 0 CY7C185-XVCB ALPHA-X 3548367 219600567 48 5191 0 ------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------ 2 Qtp # 96024, 64K SRAM, 7C185 Rev. L, R28 process, production burn-in elimination.