Cypress Semiconductor Qualification Report QTP# 97101 VERSION 2.0 July, 2003 64K x 16 Static RAM CY7C1021 CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Director (408) 432–7069 Rene Rodgers Reliability Engineering (408) 943-2732 Cypress Semiconductor 64K x 16 Static RAM Device:CY7C1021 Package: 44-pin, 400-mil SOJ QTP# 97101, V. 2.0 Page 2 of 6 July, 2003 PRODUCT DESCRIPTION (for qualification) Information provided in this document is intended for generic qualification and technically describes the Cypress part supplied: Marketing Part #: CY7C1021 Package: 44 pins, 400 mil SOJ Device Description: 64K x 16 Static RAM Cypress Division: Cypress Semiconductor Corporation - MPD Division Overall Die (or Mask) REV Level (pre-requisite for qualification): What ID markings on Die: Rev. B 7C1021A TECHNOLOGY/FAB PROCESS DESCRIPTION - R3 Number of Metal Layers: 2 Metal Composition: Passivation Type and Materials: 7,000A TEOS + 6,000A Si2N4 Free Phosphorus contents in top glass layer(%): Die Coating(s), if used: Metal 1: 500A TiW, 6000A Al/0.5%Cu 1200A TiW Metal 2: 500A TiW, 9000A Al/0.5%Cu 1200A TiW 0% None Number of Transitor in device 6,507,935 Number of Gate in device 6,565,448 Generic Process Technology/Design Rule (µ-drawn): Gate Oxide Material/Thickness (MOS): Name/Location of Die Fab (prime) Facility: Die Fab Line ID/Wafer Process ID: CMOS, Single Poly, 2 Local Interconnect, Double Metal /0.5 µm SiO2 / 145Å Cypress Semiconductor - Bloomington, MN Fab4/R3 Cypress Semiconductor 64K x 16 Static RAM Device:CY7C1021 Package: 44-pin, 400-mil SOJ QTP# 97101, V. 2.0 Page 3 of 6 July, 2003 PLASTIC PACKAGE/ASSEMBLY DESCRIPTION Package Outline, Type, or Name: 44-pin, 400 mil SOJ Mold Compound Name/Manufacturer: Lead Frame material: Nito-MP8000 A194 FH Lead Finish, composition: Solder Plated, 85%Sn, 15%Pb Die Attach Area Plating: Silver Spot Die Attach Method: Paste Die Attach Material: Ablestik 8361A Wire Bond Method: Thermosonic Wire Material/Size: Gold / 1.0 mil JESD22-A112 Moisture Sensitivity Level Level 3 Assembly Line ID and Process ID: ASE, Taiwan (TAIWN-G) Note: Please contact a Cypress Representative for other packages availability. Cypress Semiconductor 64K x 16 Static RAM Device:CY7C1021 Package: 44-pin, 400-mil SOJ QTP# 97101, V. 2.0 Page 4 of 6 July, 2003 RELIABILITY TESTS PERFORMED Stress/Test Test Condition (Temp/Bias) Result P/F High Temperature Operating Life Latent Failure Rate Dynamic Operating Condition, Vcc = 5.75V, 150°C P Read and Record Life Test Dynamic Operating Condition, Vcc = 5.75V, 150°C P High Temperature Steady State Life Static Operating Condition, Vcc = 5.75V, 150°C P High Accelerated Saturation Test (HAST) 140°C, 85%RH, 5.5V Precondition: JESD22 Moisture Sensitivity Level 3 (192 Hrs, 30C/60% RH) P Temperature Cycle MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C Precondition: JESD22 Moisture Sensitivity Level 3 (192 Hrs, 30C/60% RH) P Electrostatic Discharge Human Body Model (ESD-HBM) 1800V MIL-STD-883, Method 3015.7 P Electrostatic Discharge Charge Device Model (ESD-CDM) 500V Cypress Spec. 25-00020 P Latchup Sensitivity 12V In accordance with JEDEC 17. Cypress Spec. 01-00081 P 7.1V Cypress Spec. 01-00081 P Dynamic Latchup sensitivity Cypress Semiconductor 64K x 16 Static RAM Device:CY7C1021 Package: 44-pin, 400-mil SOJ QTP# 97101, V. 2.0 Page 5 of 6 July, 2003 RELIABILITY FAILURE RATE SUMMARY Stress/Test High Temperature Operating Life Early Failure Rate2 High Temperature Operating Life1,3 Long Term Failure Rate Device Tested/ Device Hours # Fails Activation Energy Thermal AF Failure Rate N/A N/A N/A N/A N/A 59,000 DHRs 0 0.7 170 ** FIT 1 Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. Production burn-in @ 80 Hrs/150°C/6.5V is performed for this device. 3 Chi-squared 60% estimations used to calculate the failure rate. 2 E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. ** Sample size insufficient for accurate FIT Rate calculation. Cypress Semiconductor 64K x 16 Static RAM Device:CY7C1021 Package: 44-pin, 400-mil SOJ QTP# 97101, V. 2.0 Page 6 of 6 July, 2003 RELIABILITY TEST DATA QTP#: 97101 DEVICE ASSY-LOC FABLOT# ==================== ======== ======== STRESS: ESD-CHARGE DEVICE MODEL (500V) ASSYLOT# ============== DURATION ======== S/S ==== REJ === FAIL MODE ================================ CY7C1021-VC TAIWN-G 4711049 619703241 COMP 3 0 --------------------------------------------------------------------------------------------------------------STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015 (1800V) CY7C1021-VC TAIWN-G 4711049 619703241 COMP 3 0 CY7C1021-VC TAIWN-G 4711049 619703241 COMP 3 0 --------------------------------------------------------------------------------------------------------------STRESS: HI-ACCEL SATURATION TEST (140C, 5.5V), PRECOND. 192 HRS 30C/60%RH CY7C1021-VC TAIWN-G 4711049 619703241 128 48 1 1 LIFTING BOND CY7C1021-VC TAIWN-G 4711049 619703241L1 128 48 0 --------------------------------------------------------------------------------------------------------------STRESS: HIGH TEMP STEADY STATE LIFE TEST (150C, 5.75V) CY7C1021-VC CY7C1021-VC TAIWN-G TAIWN-G 4711049 4711049 619703241 619703241 76 168 75 75 0 0 CY7C1021-VC TAIWN-G 4711049 619703241 80 76 0 CY7C1021-VC TAIWN-G 4711049 619703241 168 76 0 --------------------------------------------------------------------------------------------------------------STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 5.75V) CY7C1021-VC TAIWN-G 4711049 619703241 80 118 0 CY7C1021-VC TAIWN-G 4711049 619703241 500 118 0 --------------------------------------------------------------------------------------------------------------STRESS: READ & RECORD LIFE TEST (150C, 5.75V) CY7C1021-VC TAIWN-G 4711049 619703241 500 10 0 --------------------------------------------------------------------------------------------------------------STRESS: TC COND. C, -65 TO 150C, PRECOND. 192 HRS 30C/60%RH CY7C1021-VC TAIWN-G 4711049 619703241 300 48 0 CY7C1021-VC TAIWN-G 4711049 619703241 1000 48 0 ---------------------------------------------------------------------------------------------------------------