Document No.001-88022 Rev. *A ECN # 4417735 Cypress Semiconductor Product Qualification Report QTP# 98424 VERSION*A June, 2014 256K STATIC SRAM, R42HD TECHNOLOGY, FAB 4 CY7C194/195 64K x 4 Static RAM (5V) CY7C197 256K x 1 Static RAM (5V ) CY7C199 32K x 8 Static RAM (5V) FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT [email protected] or via a CYLINK CRM CASE Prepared By: Josephine Pineda Reliability Engineer Reviewed By: Zhaomin Ji Reliability Manager Approved By: Richard Oshiro Reliability Director Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 8 Document No.001-88022 Rev. *A ECN # 4417735 PRODUCT QUALIFICATION HISTORY Qual Report 98064 1 Meg SRAM fabricated in Fab 4 with R42HD Technology Date Comp Feb. 1999 98424 256K STATIC SRAM (CY7C194/195/197/199) - R42DH TECHNOLOGY - FAB 4 June 2000 Description of Qualification Purpose Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 8 Document No.001-88022 Rev. *A ECN # 4417735 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Outline, Type, or Name: 28-pin, 300-mil SOJ Mold Compound Name/Manufacturer Hitachi CEL 9200 Lead Frame material: Copper Lead Finish, composition: Solder Plated, 90%Sn, 10%Pb Die Attach Area Plating: Silver Spot Die Attach Method: Epoxy Die Attach Material: Ablestik 8361H Wire Bond Method: Thermosonic JESD22-A112 Moisture Sensitivity Level Wire Material/Size: Gold / 1.0/1.3 mil Level 1 : Name/Location of Assembly (prime facility ) Cypress Philippines (CSPI-R) PRODUCT DESCRIPTION (for qualification) Information provided in this document is intended for generic qualification and technically describes the Cypress part supplied: CY7C199 Marketing Part #: 32K x 8 Static RAM, R42HD Technology , 28-pin, 300-mil SOJ Device Description: Cypress Semiconductor Corporation – MPD Division Cypress Division: Overall Die (or Mask) REV Level (pre-requisite for qualification): What ID markings on Die: Rev G. 7C1599C TECHNOLOGY/FAB PROCESS DESCRIPTION – RAM42 Number of Metal Layers: 2 Passivation Type and Materials: Free Phosphorus contents in top glass layer(%): Metal Metal 1: 500Å TiW/6000Å Al -5%Cu/1200Å TiW Composition: Metal 2: 500Å TiW/8000Å Al -5%Cu/300Å TiW 7000Å SiO2 0% + 6000Å Si3N4 Generic Process Technology/Design Rule (µ-drawn): CMOS, Double Metal /0.42 m Gate Oxide Material/Thickness (MOS): SiO2 / 110Å Name/Location of Die Fab (prime) Facility: Cypress Semiconductor - Bloomington, MN Die Fab Line ID/Wafer Process ID: Fab4/R42HD Note: Please contact a Cypress Representative for other packages availability. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 8 Document No.001-88022 Rev. *A ECN # 4417735 RELIABILITY TESTS PERFORMED Stress/Test Test Condition (Temp/Bias) Result P/F High Temperature Operating Life Latent Failure Rate Dynamic Operating Condition, Vcc = 5.75V, 150°C JESD22-A108 P Extended Dynamic Burn-in Dynamic Operating Condition, Vcc = 5.75V, 150°C JESD22-A108 P Read and Record Life Test Dynamic Operating Condition, Vcc = 5.75V, 150°C JESD22-A108 P High Temperature Steady State Life Static Operating Condition, Vcc = 5.75V, 150°C JESD22-A108 P High Accelerated Saturation Test (HAST) JEDEC STD 22-A110: 140°C, 85%RH, 5.5V Precondition: JESD22 Moisture Sensitivity Level P (192 Hrs., 30C, 60% RH) Temperature Cycle MIL-STD-883, Method 1010, Condition C, -65°C to 150°C Precondition: JESD22 Moisture Sensitivity Level 3 (192 Hrs, 30C/60%RH) P Cold Life Test Dynamic Operating Condition, Vcc = 6.5V, -45 °C P JESD22-A108 High Temp Storage JESD22-A103:165°C, No bias P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V MIL-STD-883, Method 3015.7 P Electrostatic Discharge Charge Device Model (ESD-CDM) 1000V, JESD22-C101 P 11.10V / 7.3V Latchup Sensitivity In accordance with JEDEC 17 P Current Density Meet Technology Device Level Reliability Specifications P Aged Bond Pull MIL-STD-883, Method 2011 P Static Latchup/ Dynamic Latchup Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 8 Document No.001-88022 Rev. *A ECN # 4417735 RELIABILITY FAILURE RATE SUMMARY Stress/Te st High Temperature Operating Life Early Failure Rate 1,2, High Temperature Operating Life Long Term Failure Rate 1 2 3 Device Tested/ Device Hours # Fails Activation Energy Thermal AF4 Failure Rate 3020 0 N/A N/A 0 PPM 791,500 DHRs 0 170 7 FIT 0.7 Assuming an ambient temperature of 55C and a junction temperature rise of 15C. Chi-squared 60% estimations used to calculate the failure rate.. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. -5 k = Boltzmann's constant = 8.62x10 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. 4 Long Term Failure Rate is based on 1 Meg SRAM, R42HD Technology qualification, QTP#98064 . Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 8 Document No.001-88022 Rev. *A ECN # 4417735 Reliability Test Data QTP #: 98424 Device STRESS: Fab Lot # Assy Lot # Ass Loc Duration Samp Rej HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150C, 5.75V) CY7C199-VC CSPI-R 4822196 619808550 48 1012 0 CY7C199-VC CSPI-R 4822279 619809494 48 1008 0 CY7C199-VC CSPI-R 4828707 619812830 48 1000 0 619812830 COMP 3 0 3 0 48 0 48 44 0 0 STRESS: ESD-CHARGE DEVICE MODEL (1000V) CY7C199-VC STRESS: 4828707 CSPI-R 4828707 619812830 COMP PRESSURE COOKER TEST (121C, 100%RH) CY7C199-VC STRESS: CSPI-R ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015 (2200V) CY7C199-VC STRESS: Failure Mechanism CSPI-R 4828707 619812830 168 TC COND. C, -65 TO 150C, PRECOND. 168 HRS 85C/85%RH (MSL 1) CY7C199-VC CY7C199-VC CSPI-R CSPI-R 4828707 4934352 619812830 619928997 300 1000 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 8 Document No.001-88022 Rev. *A ECN # 4417735 Reliability Test Data QTP #: 98064 Device STRESS: Fab Lot # Duration Samp Rej INDNS-O 4738602 519712560 COMP 3 0 INDNS-O 4738602 519712560 COMP 3 0 HI-ACCEL SATURATION TEST (140C, 5.5V), PRECOND. 192 HRS 30C/60%RH CY7C109-VC INDNS-O 4738602 519712560 128 46 0 CY7C109-VC CY7C109-VC INDNS-O INDNS-O 4738564 4738564 519712898 519712898 128 256 46 46 0 0 CY7C109-VC INDNS-O 4739644 519714390 128 46 0 STRESS: HIGH TEMPERATURE STORAGE (165C, NO BIAS) CY7C109-VC INDNS-O 4738602 519712560 336 46 0 CY7C109-VC INDNS-O 4738602 519712560 500 46 0 CY7C109-VC INDNS-O 4738602 519712560 1000 46 0 STRESS: HIGH TEMP STEADY STATE LIFE TEST (150C, 5.75V) CY7C109-VC CY7C109-VC INDNS-O INDNS-O 4738602 4738602 519712560 519712560 80 168 78 78 0 0 CY7C109-VC CY7C109-VC INDNS-O INDNS-O 4739644 4739644 519714390 519714390 80 168 78 78 0 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 5.75V) CY7C109-VC CY7C109-VC INDNS-O INDNS-O 4739644 4739644 519714390 519714390 80 500 528 527 0 0 CY7C109-VC CY7C109-VC INDNS-O INDNS-O 4745042 4745042 519800651L1 519800651L1 80 500 529 529 0 0 519714390 1000 527 0 519712560 519712560 500 1000 45 45 0 0 48 500 10 10 0 0 STRESS: EXTENDED DYNAMIC BURN-IN (150C, 5.75V) CY7C109-VC STRESS: 4739644 INDNS-O INDNS-O 4738602 4738602 READ & RECORD LIFE TEST (150C, 5.75V) CY7C109-VC CY7C109-VC STRESS: INDNS-O COLD LIFE TEST (-30C, 6.5V) CY7C109-VC CY7C109-VC STRESS: Failure Mechanism ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2200V CY7C109-VC STRESS: Ass Loc ESD-CHARGE DEVICE MODEL, 1000V CY7C109-VC STRESS: Assy Lot # INDNS-O INDNS-O 4738602 4738602 519712560 519712560 TC COND. C, -65 TO 150C, PRECOND. 192 HRS 30C/60%RH CY7C109-VC CY7C109-VC INDNS-O INDNS-O 4738602 4738602 519712560 519712560 300 1000 46 46 0 0 CY7C109-VC INDNS-O 4738564 519712898 300 46 0 CY7C109-VC INDNS-O 4739644 519714390 300 46 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 8 Document No.001-88022 Rev. *A ECN # 4417735 Document History Page Document Title: Document Number: QTP #98424: 256K STATIC SRAM (CY7C194/195/197/199) - R42DH TECHNOLOGY - FAB 4 001-88022 Rev. ECN Orig. of No. Change ** 4033729 ILZ *A 4417735 JYF Description of Change Initial Spec Release Qualification report published on Cypress.com is not in spec format. Initiated spec for QTP 98424 and removed all Cypress reference spec and replaced with Industry standard. Updated package availability based on current qualified assembly Sunset review: Updated QTP title page; Updated Reliability Tests Performed table: - Added industry standard of LFR, Extended Dynamic Burn-In, Read and Record Life Test, HTSSL, HAST, HTS, Cold Life Test and HTS . Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 8