Document No. 001-84618 Rev. ** ECN #: 3810582 Cypress Semiconductor Product Qualification Report QTP# 081704 November 2012 Zero Delay Buffer L28 Technology, TSMC-2A CY2309 CY2305 Low-Cost 3.3V Zero Delay Buffer CY2304 CY2308 3.3V Zero Delay Buffer CY2300 CY2303 Phase-Aligned Clock Multiplier CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Mira Ben-Tzur Reliability Director (408) 943-2675 Zhaomin Ji Principal Reliability Engineer (408) 432-7021 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 11 Document No. 001-84618 Rev. ** ECN #: 3810582 PRODUCT QUALIFICATION HISTORY QTP Number Description of Qualification Purpose Date 99285 To qualify L28-TSMC Technology in TMSC-2A May 2003 081704 CY230X L28 Process Transfer from CTI Fab2 to TSMC-2A Aug 2008 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 11 Document No. 001-84618 Rev. ** ECN #: 3810582 PRODUCT DESCRIPTION (for qualification) Purpose: CY230X L28 Process Transfer from CTI Fab2 to TSMC CY2304, CY2305, CY2308, CY2309, CY2300, CY2303 Marketing Part #: Device Description: 3.3V Zero Delay Buffer available in 8/16-Lead SOIC Cypress Division: Cypress Semiconductor Corporation –Memory Product Division (MPD) TECHNOLOGY/FAB PROCESS DESCRIPTION – R9T-3R Number of Metal Layers: Metal 1: 400Å Ti / 1,000Å TiN/ 4,700Å Metal Composition: AlSiCu / 375Å TiN Metal 2: 1,500 Å Ti / 8,000Å AlSiCu / 375Å TiN 3,000Å SiN / 3,150Å SOG, 1,200Å SiN 2 Passivation Type and Materials: Generic Process Technology/Design Rule ( drawn): CMOS, Single Poly, Double Metal/0.65um Gate Oxide Material/Thickness (MOS): SiO2 / 125 Å Name/Location of Die Fab (prime) Facility: TSMC-2A, Taiwan Die Fab Line ID/Wafer Process ID: TSMC-2A/L28 TSMC PACKAGE AVAILABILITY PACKAGE ASSEMBLY SITE FACILITY 8-Lead SOIC PHIL-M, CML-RA 16 Lead SOIC PHIL-M, CML-RA, TAIWAN-T Note: Package Qualification details upon request. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 11 Document No. 001-84618 Rev. ** ECN #: 3810582 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: Mold Compound Flammability Rating: Mold Compound Alpha Emission Rate SZ165 16-Lead Small Outline IC (SOIC) Sumitomo 6600H V-O per UL94 N/A Oxygen Rating Index: None Lead Frame Material: Copper Lead Finish, Composition / Thickness: Pure Sn Die Backside Method/Metallization: Backgrind Preparation Die Separation Method: Wafer Saw Die Attach Supplier: Ablestik Die Attach Material: 8290 Die Attach Method: Eutectic Bond Diagram Designation: 001-16776 Wire Bond Method: Thermosonic Wire Material/Size: Au 1.0mil Thermal Resistance Theta JA °C/W: 124.86°C/W Package Cross Section Yes/No: No Assembly Process Flow: 49-24026 Name/Location of Assembly (prime) facility: Amkor Philippines (Phil-M) ELECTRICAL TEST / FINISH DESCRIPTION Test Location: CML-R Fault Coverage: 100% Note: Please contact a Cypress Representative for other package availability. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 11 Document No. 001-84618 Rev. ** ECN #: 3810582 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS Stress/Test High Temperature Operating Life Early Failure Rate High Temperature Operating Life Latent Failure Rate Temperature Cycle Test Condition (Temp/Bias) Result P/F Dynamic Operating Condition, Vcc = 3.8V, 150°C JESD22-A108 P Dynamic Operating Condition, Vcc = 3.8V, 150°C JESD22-A108 P -650C to 1500C, MIL-STD-883C, Method 1010, (99285), JESD22-A-104, , (081704) Precondition: JESD22 Moisture Sensitivity Level 1 P (168 hrs, 85C/85%RH) High Accelerated Saturation Test JEDEC STD 22-A110: 130C, 3.63V, 85%RH (HAST) Precondition: JESD22 Moisture Sensitivity Level 1 P (168 Hrs, 85C/85%RH) High Temperature Steady Life Test JESD22-A108: VCC=150°C/3.63V Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V MIL-STD-883, Method 3015.7 (99285), JESD22-A114E , (081704) Electrostatic Discharge Charge Device Model (ESD-CDM) 500V JESD22-C101 Electrostatic Discharge P Machine Model (ESD-MM) 200V JESD22-A115-A Low Temperature Operating Life JESD22-A108 (-30C) P Pressure Cooker JESD22-A102: 121°C, 100%RH Precondition: JESD22 Moisture Sensitivity Level 1 P P P P (168 Hrs, 85C/85%RH) Data Retention 150 C, non-biased JESD22-A117 and JESD22-A103 Latch-up Sensitivity ± 200mA In accordance with JEDEC 17 (99285), JESD-78A (081704), 125°C,± 200mA Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 11 P P Document No. 001-84618 Rev. ** ECN #: 3810582 RELIABILITY FAILURE RATE SUMMARY Stress/Test High Temperature Operating Life Early Failure Rate 1, 2 High Temperature Operating Life Long Term Failure Rate 1 2 3 Device Tested/ Device Hours # Fails Activation Energy Acceleration 3 Factor Failure Rate 1671 0 N/A N/A 0 PPM 181,660HRs 0 0.7 170 30FIT* Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. -5 K = Boltzmann’s constant = 8.62x10 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. * Fit rate data based from the Technology Qual Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 11 Document No. 001-84618 Rev. ** ECN #: 3810582 Reliability Test Data QTP #: 99285 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: DATA RETENTION, PLASTIC, 150C CY2280-OC 2937109 619927291/2/3 CSPI-R 500 85 0 CY2280-OC 2937109 619927291 CSPI-R 500 85 0 CY2280-OC 2937109 619927291 CSPI-R 1000 85 0 CY2280-OC 2937190 619928659 CSPI-R 500 50 0 CY2280-OC 2937190 619928659 CSPI-R 1000 50 0 CY2280-OC 2942829 619933793 CSPI-R 500 50 0 CY2280-OC 2942829 619933793 CSPI-R 1000 50 0 STRESS: ESD-CHARGE DEVICE MODEL, (1000V) CY2280-OC 2937109 619927291/2/3 CSPI-R COMP 3 0 CY2280-OC 2937190 619928659/60/61 CSPI-R COMP 3 0 STRESS: ESD-HUMAN BODY CIRCUIT PER PER MIL STD 883, METHOD 3015 (2,200V) CY2280-OC CY2280-OC 2937109 2937190 619927291/2/3 CSPI-R 619928659/60/61 CSPI-R COMP 3 0 COMP 3 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150C, 3.8V, Vcc Max) CY2280-OC 2937109 619927291/2/3 CSPI-R 48 335 0 CY2280-OC 2937190 619928659/60/61 CSPI-R 48 234 0 CY2280-OC 2937190 619928659/60/61 CSPI-R 48 101 0 CY2280-OC 2942829 619933793/4/5 48 349 0 CSPI-R STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 3.8V, Vcc Max) CY2280-OC 2937109 619927291/2/3 CSPI-R 80 120 0 CY2280-OC 2937109 619927291/2/3 CSPI-R 500 120 0 CY2280-OC 2937190 619928659/60/61 CSPI-R 80 120 0 CY2280-OC 2937190 619928659/60/61 CSPI-R 500 120 0 CY2280-OC 2942829 619933793/4/5 CSPI-R 80 125 0 CY2280-OC 2942829 619933793/4/5 CSPI-R 500 123 0 STRESS: HI-ACCEL SATURATION TEST (140C/85%RH/3.63V), PRECOND. 168 HRS 85C/85%RH CY2280-OC 2937109 619927291/2/3 CSPI-R 128 50 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 11 Document No. 001-84618 Rev. ** ECN #: 3810582 Reliability Test Data QTP #: 99285 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP STEADY STATE LIFE TEST (150C, 3.63V) CY2280-OC 2937109 619927291/2/3 CSPI-R 80 77 0 CY2280-OC 2937109 619927291/2/3 CSPI-R 168 77 0 500 50 0 168 53 0 50 0 STRESS: CY2280-OC STRESS: CY2280-OC STRESS: CY2280-OC LOW TEMPERATURE OPERATING LIFE (-30C/8MHZ) 2937190 619928659/60/61 CSPI-R PRESSURE COOKER TEST, MSL 1 (121C, 100%RH) 2937109 619927291/2/3 CSPI-R TC COND. C, -65 TO 150C, PRECOND. 168 HRS 85C/85%RH (MSL 1)) 2937109 619927291/2/3 CSPI-R 300 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 11 Document No. 001-84618 Rev. ** ECN #: 3810582 Reliability Test Data QTP #: 081704 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150C, 3.8V, Vcc Max) CY2309ESXI (7C80727B) 8823000 610828970 M-PHIL 48 504 0 CY2309ESXI (7C80727B) 8823000 610831567 M-PHIL 48 663 0 CY2309ESXC (7C80727B) 8823000 610831048 RA-CML 48 504 0 STRESS: ESD-CHARGE DEVICE MODEL, (500V) CY2309ESXI (7C80727B) 8823000 610828970 M-PHIL COMP 9 0 CY2300ESXC (7C80731B) 8823000 610828961 M-PHIL COMP 9 0 CY2305ESXI (7C80723B) 8823000 610828969 M-PHIL COMP 9 0 CY2309EZXI (7C80727B) 8823000 610831054 M-PHIL COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-E, (2,200V CY2308ESXI (7C80725B) 8823000 610828966 M-PHIL COMP 8 0 CY2309ESXI (7C80727B) 8823000 610828970 M-PHIL COMP 8 0 CY2300ESXC (7C80731B) 8823000 610828961 M-PHIL COMP 8 0 CY2309ESX1 (7C80721B) 610831772 M-PHIL COMP 8 0 610831567 RA-CML COMP 3 0 610831567 RA-CML COMP 3 0 610831567 RA-CML COMP 3 0 610831567 RA-CML COMP 3 0 610831567 RA-CML COMP 3 0 8823000 STRESS: ESD-MACHINE MODEL, 110V CY2309SXI (7C80727B) 4825485 STRESS: ESD-MACHINE MODEL, 160V CY2309SXI (7C80727B) 4825485 STRESS: ESD-MACHINE MODEL, 200V CY2309SXI (7C80727B) 4825485 STRESS: ESD-MACHINE MODEL, 250V CY2309SXI (7C80727B) 4825485 STRESS: ESD-MACHINE MODEL, 300V CY2309SXI (7C80727B) 4825485 STRESS: STATIC LATCH-UP TESTING PER JEDEC17 (125C, ±200mA, 5.4V) CY2308ESXI (7C80725B) 8823000 610828966 M-PHIL COMP 6 0 CY2309ESXI (7C80727B) 8823000 610828970 M-PHIL COMP 6 0 CY2309ESX1 (7C80721B) 8823000 610831772 M-PHIL COMP 6 0 CY2309ESX1 (7C80721B) 8823000 610831772 M-PHIL COMP 6 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 11 Document No. 001-84618 Rev. ** ECN #: 3810582 Reliability Test Data QTP #: 081704 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: STATIC LATCH-UP TESTING PER JESD78 (125C, ±200mA, 5.4V) CY2308ESXI (7C80725B) 8823000 610828966 M-PHIL COMP 6 0 CY2309ESXI (7C80727B) 8823000 610828970 M-PHIL COMP 6 0 CY2300ESXC (7C80731B) 8823000 610828961 M-PHIL COMP 6 0 STRESS: ETEST DATA CY2308ESXI (7C80725B) 8823000 COMPARABLE 8823000 COMPARABLE STRESS: SORT YIELD CY2308ESXI (7C80725B) Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 11 Document No. 001-84618 Rev. ** ECN #: 3810582 Document History Page Document Title: Document Number: QTP 081704: ZERO DELAY BUFFER (CY230X), L28 TECHNOLOGY, TSMC-2A 001-84618 Rev. ECN Orig. of No. Change ** 3810582 NSR Description of Change Initial Spec Release. Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 11