Document No. 001-88658 Rev. *A ECN #: 4462787 Cypress Semiconductor Product Qualification Report QTP # 132904 VERSION *A August 2014 PSoC Device Family S8DIN-5R, Fab 3 HHGrace CY8C24493 CY8C24193 CY8C240093 PSoC® Programmable System On Chip FOR ANY QUESTIONS ON THIS REPORT, PLEAE CONTACT [email protected] or via a CYLINK CRM CASE Prepared By: Honesto Sintos Reliability Engineer Reviewed By: Zhaomin Ji Reliability Manager Approved By: Richard Oshiro Reliability Director Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 12 Document No. 001-88658 Rev. *A ECN #: 4462787 PRODUCT QUALIFICATION HISTORY QTP Number 090706 114003 132904 Description of Qualification Purpose Date Qualification of Capsense (CY8C20X36A, CY8C20X46A, CY8C20X66A, CY8C20X96A) Device in Fab 5 GSMC on S8DIN-5R Process Qualification of 8C20067AC Die in GSMC, S8DIN-5R Technology March 2010 Feb 2012 Qualification of PSOC (CY8C24493, CY8C24193, CY8C240093) Device using the S8-DIN Technology in Fab 3 HHGrace. July 2013 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 12 Document No. 001-88658 Rev. *A ECN #: 4462787 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Qualification of PSOC (CY8C24493, CY8C24193, CY8C240093) Device using the S8-DIN Technology in Fab 3 HHGrace. Marketing Part #: CY8C24493, CY8C24193, CY8C240093 Device Description: PSoC® Programmable System On Chip Cypress Division: Cypress Semiconductor Corporation – Programmable Systems Division (PSD) TECHNOLOGY/FAB PROCESS DESCRIPTION Number of Metal Layers: 3 Metal Composition: Passivation Type and Thickness: Metal 1: 150A Ti/250A TiN/32000A Al/90A Ti/500A TiN Metal 2: 150A Ti/250A TiN/32000A Al/90A Ti/500A TiN Metal 3: 190A Ti/450A TiN/21250A Al/90A Ti/200A TiN 1000A TEOS/9000A Si3N4 Generic Process Technology/Design Rule (µ-drawn): 1P3M, 0.13 µm Gate Oxide Material/Thickness (MOS): Dual: SiO2 / 110A or SiO2 / 32A Name/Location of Die Fab (prime) Facility: Fab 3 / HHGrace, Shanghai China Die Fab Line ID/Wafer Process ID: S8DIN-5R PACKAGE AVAILABILITY ASSEMBLY FACILITY SITE PACKAGE 32-Lead QFN/ 48-Lead QFN ASE-Taiwan, CML-RA Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 12 Document No. 001-88658 Rev. *A ECN #: 4462787 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: LQ32 Mold Compound Flammability Rating: 32L Saw Quad Flat No Lead (QFN) Hitachi CEL9220HF13 V-O per UL94 Oxygen Rating Index: None Lead Frame Material: Copper Lead Finish, Composition / Thickness: NiPdAu Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: Blade Sawing Die Attach Supplier: Dexter /Henkel Die Attach Material: QMI509 Die Attach Method: Die Attach Epoxy Bond Diagram Designation: 001-72721 Wire Bond Method: Thermosonic Wire Material/Size: Au. 0.8 mil Thermal Resistance Theta JA °C/W: 46 °C/W Package Cross Section Yes/No: N/A Assembly Process Flow: 11-20029 Name/Location of Assembly (prime) facility: CML-RA MSL Level 3 Reflow Profile 260C Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 12 Document No. 001-88658 Rev. *A ECN #: 4462787 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: FN30B Mold Compound Flammability Rating: 30 WLCSP N/A N/A Oxygen Rating Index: None Lead Frame Material: N/A Solder Ball Composition / Thickness: SnAg (2.3%) Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: Blade Sawing Die Attach Supplier: N/A Die Attach Material: N/A Die Attach Method: N/A Bond Diagram Designation: 001-72726 Wire Bond Method: N/A Wire Material/Size: N/A Thermal Resistance Theta JA °C/W: N/A Package Cross Section Yes/No: N/A Assembly Process Flow: 001-15616 Name/Location of Assembly (prime) facility: AU-Taiwan (Amkor) MSL Level 1 Reflow Profile 260C ELECTRICAL TEST / FINISH DESCRIPTION Test Location: KYEC Taiwan, CML-RA Note: Please contact a Cypress Representative for other package availability. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 12 Document No. 001-88658 Rev. *A ECN #: 4462787 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS Stress/Test Test Condition (Temp/Bias) Result P/F High Temperature Operating Life Early Failure Rate JESD22-A-108: Dynamic Operating Condition, Vcc Max=2.1V, 150°C P High Temperature Operating Life Early Failure Rate (Regulator On) JESD22-A-108: Dynamic Operating Condition, Vcc Max=5.5V, 150°C P High Temperature Operating Life Latent Failure Rate JESD22-A-108: Dynamic Operating Condition, Vcc Max=2.1V, 150°C P High Temperature Steady State life JESD22-A108: 150°C, 5.75V, Vcc Max P Low Temperature Operating Life JESD22-A108: -30°C, 2.1V P Low Temperature Storage Life JESD22-A108: -40°C, No Bias P High Accelerated Saturation Test (HAST) JEDEC STD 22-A110 P 130°C, 5.25V, 85%RH Precondition: JESD22 Moisture Sensitivity Level 3 192 Hrs, 30C/60%RH+ Reflow, 260°C+0, -5°C Temperature Cycle MIL-STD-883, Method 1010, Condition C, -65°C to 150°C Precondition: JESD22 Moisture Sensitivity Level 3 P 192 Hrs, 30C/60%RH+ Reflow, 260°C+0, -5°C Pressure Cooker JESD22-A102: 121°C, 100%RH, 15 Psig Precondition: JESD22 Moisture Sensitivity Level 3 Acoustic Microscopy J-STD-020 Precondition: JESD22 Moisture Sensitivity Level Age Bond Strength MIL-STD-883, Method 883-2011: 200C, 4hrs P Data Retention JESD22-A117 and JESD22-A103: 150°C ± 5°C No Bias P Dynamic Latch-up JESD78: 150C, 9.0V P Electrostatic Discharge Human Body Model (ESD-HBM) JESD22, Method A114: 2,200V P Electrostatic Discharge Charge Device Model (ESD-CDM) JESD22-C101 : 500V Electrostatic Discharge JESD22-A115: 200V P Endurance Test JESD22-A117 P Static Latch-up JESD 78: 125C, ± 140mA P SEM Cross Section MIL-STD-883, Method 2018 P P 192 Hrs, 30C/60%RH+ Reflow, 260°C+0, -5°C P 192 Hrs, 30C/60%RH+ Reflow, 260°C+0, -5°C P Machine Model (ESD-MM) Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 12 Document No. 001-88658 Rev. *A ECN #: 4462787 RELIABILITY FAILURE RATE SUMMARY Stress/Test High Temperature Operating Life Early Failure Rate 1,2 High Temperature Operating Life Long Term Failure Rate 3 3 3 Failure Rate Device Tested/ Device Hours # Fails Activation Energy Thermal AF3 1,500 Devices 0 N/A N/A 0 PPM 621,580 DHRs 0 0.7 170 9 FIT Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. -5 K = Boltzmann’s constant = 8.62x10 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 12 Document No. 001-88658 Rev. *A ECN #: 4462787 Reliability Test Data QTP #: 090706 Device Fab Lot # Assy Lot # Assy Lot Duration Samp Rej Failure Mechanism STRESS: ACOUSTIC, MSL3 CY8C20466A (8C204665A) 4926959 610927071 CML-RA COMP 15 0 CY8C20466A (8C204665A) 4934292 610931047 CML-RA COMP 15 0 CY8C20466A (8C204665A) 4938497 610935369 CML-RA COMP 15 0 CY8C20466A (8C204665A) 4926959 610927071 CML-RA COMP 3 0 CY8C20466A (8C204665A) 4934292 610931047 CML-RA COMP 3 0 CY8C20466A (8C204665A) 4938497 610935369 CML-RA COMP 3 0 STRESS: AGE BOND STRENGTH STRESS: DATA RETENTION, PLASTIC, 150C CY8C20466A (8C204665A) 4926959 610927071 CML-RA 500 77 0 CY8C20466A (8C204665A) 4926959 610927071 CML-RA 1000 77 0 CY8C20466A (8C204665A) 4926959 610927071 CML-RA 1446 77 0 CY8C20466A (8C204665A) 4934292 610931047 CML-RA 500 80 0 CY8C20466A (8C204665A) 4934292 610931047 CML-RA 1000 80 0 CY8C20466A (8C204665A) 4938497 610935369 CML-RA 500 80 0 CY8C20466A (8C204665A) 4938497 610935369 CML-RA 1000 80 0 CY8C20566A (8C205665A) 4926959 610926865 CML-R 168 77 0 CY8C20566A (8C205665A) 4926959 610926865 CML-R 524 77 0 CY8C20566A (8C205665A) 4934292 610931057 CML-R 168 78 0 CY8C20566A (8C205665A) 4938497 610935104 CML-R 168 77 0 STRESS: ENDURANCE STRESS: ESD-CHARGE DEVICE MODEL, (500V) CY8C20066A (8C200665A) 4926959 610926836 Malaysia-CA COMP 9 0 CY8C20066A (8C200665A) 4934292 610932270 Malaysia-CA COMP 9 0 CY8C20066A (8C200665A) 4938497 610935356 Malaysia-CA COMP 9 0 STRESS: ESD-MACHINE MODEL, (200V) CY8C20236A (8C202662B) 5123122 611141575 Korea-L COMP 5 0 CY8C20236A (8C202662B) 5125016 611142867 PHIL-MB COMP 5 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 12 Document No. 001-88658 Rev. *A ECN #: 4462787 Reliability Test Data QTP #: 090706 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V) CY8C20066A (8C200665A) 4926959 610926836 Malaysia-CA COMP 8 0 CY8C20066A (8C200665A) 4934292 610932270 Malaysia-CA COMP 8 0 CY8C20066A (8C200665A) 4938497 610935356 Malaysia-CA COMP 8 0 STRESS: STATIC LATCH-UP (125C, 8.25V, 140mA) CY8C20066A (8C200665A) 4926959 610926836 Malaysia-CA COMP 6 0 CY8C20066A (8C200665A) 4934292 610932270 Malaysia-CA COMP 6 0 CY8C20066A (8C200665A) 4938497 610935356 Malaysia-CA COMP 6 0 CML-RA 5 0 STRESS: DYNAMIC LATCH-UP (150C, 9.0V) CY8C20466A (8C204665A) 4926959 610927071 COMP STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150, 2.1V, Vcc Max) CY8C20466A (8C204665A) 4926959 610927071 CML-RA 48 1000 0 CY8C20466A (8C204665A) 4934292 610931047 CML-RA 48 1000 0 CY8C20466A (8C204665A) 4938497 610935369 CML-RA 48 1000 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE REGULATOR ON (150, 5.5V, Vcc Max) CY8C20466A (8C204665A) 4926959 610927071 CML-RA 48 45 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 2.1V, Vcc Max) CY8C20466A (8C204665A) 4926959 610927071 CML-RA 80 400 0 CY8C20466A (8C204665A) 4926959 610927071 CML-RA 500 399 0 CY8C20466A (8C204665A) 4934292 610931047 CML-RA 500 444 0 CY8C20466A (8C204665A) 4938497 610935369 CML-RA 80 400 0 CY8C20466A (8C204665A) 4938497 610935369 CML-RA 500 400 0 STRESS: HIGH TEMP STEADY STATE LIFE TEST (150C, 5.75V) CY8C20466A (8C204665A) 4926959 610927071 CML-RA 80 77 0 CY8C20466A (8C204665A) 4926959 610927071 CML-RA 168 77 0 500 83 0 STRESS: LOW TEMPERATURE DYNAMIC OPERATING LIFE, -30C, 2.1V CY8C20566A (8C205665A) 4926959 610926865 CML-R Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 12 Document No. 001-88658 Rev. *A ECN #: 4462787 Reliability Test Data QTP #: 090706 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: LOW TEMPERATURE STORAGE, -40C, No Bias CY8C20236A (8C202662B) 4040296 611049683 MB-PHIL 625 22 0 CY8C20236A (8C202662B) 4040296 611049683 MB-PHIL 1000 78 0 STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 5.25V), PRE COND 192 HR 30C/60%RH (MSL3) CY8C20466A (8C204665A) 4948407GSMC610946935 CML-RA 128 80 0 CY8C20466A (8C204665A) 4948407A2 610947114 CML-RA 128 80 0 CY8C20466A (8C204665A) 4948407A3 611002233 CML-RA 128 80 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 192 HR 30C/60%RH (MSL3) CY8C20466A (8C204665A) 4948407GSMC610946935 CML-RA 168 80 0 CY8C20466A (8C204665A) 4948407A2 610947114 CML-RA 168 80 0 CY8C20466A (8C204665A) 4948407A3 611002233 CML-RA 168 80 0 STRESS: TC COND. C –65C TO 150C, PRE COND 192 HRS 30C/60%RH (MSL3) CY8C20466A (8C204665A) 4926959 610927071 CML-RA 500 76 0 CY8C20466A (8C204665A) 4934292 610931047 CML-RA 500 80 0 CY8C20466A (8C204665A) 4934292 610931047 CML-RA 1000 80 0 CY8C20466A (8C204665A) 4938497 610935369 CML-RA 500 80 0 610931047 CML-RA COMP 1 0 STRESS: SEM CROSS SECTION CY8C20066A (8C20066AC) 4934292 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 12 Document No. 001-88658 Rev. *A ECN #: 4462787 Reliability Test Data QTP #: 132904 Device Fab Lot # Assy Lot # Assy Lot Duration Samp Rej Failure Mechanism STRESS: ACOUSTIC, MSL3 CY8C24493 (8C206662A) 5144053 611156843 AU-Taiwan COMP 15 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150, 2.1V, Vcc Max) CY8C24493 (8C206662A) STRESS: 5144053 611158099 CML-RA 48 1500 0 COMP 9 0 8 0 ESD-CHARGE DEVICE MODEL, (500V) CY8C24493 (8C206662A) 5144053 611156843 AU-Taiwan STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V) CY8C24493 (8C206662A) 5144053 611156843 AU-Taiwan COMP STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 192 HR 30C/60%RH (MSL3) CY8C24493 (8C206662A) 5144053 611156843 AU-Taiwan 96 71 0 AU-Taiwan COMP 6 0 71 0 STRESS: STATIC LATCH-UP (125C, 8.25V, 140mA) CY8C24493 (8C206662A) 5144053 611156843 STRESS: TC COND. C –65C TO 150C, PRE COND 192 HRS 30C/60%RH (MSL3) CY8C24493 (8C206662A) 5144053 611156843 AU-Taiwan 500 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 12 Document No. 001-88658 Rev. *A ECN #: 4462787 Document History Page Document Title: Document Number: Rev. ECN No. ** 4086715 *A 4462787 QTP#132904: PSoC Device Family "CY8C24493/24193/240093" S8DIN-5R, Fab 3 HHGrace 001-88658 Orig. of Change HSTO HSTO Description of Change Initial Spec Release Align qualification report based on the new template in the front page Update Fab site from GSMC (Fab5) to HHGrace (Fab3) in the title page, page 2 and page 3. Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 12 of 12