Cypress Semiconductor Product Qualification Report QTP# 042505 VERSION 2.0 April 2006 S4AD-5 Technology, Fab 2 PSoC Mixed Signal Array (Neutron Product) Family CY8C21234 CY8C21334 PSoC™ Mixed Signal Array with On-Chip CY8C21434 Controller CY8C21534 CY8C21634 CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Sabbas Daniel VP Quality Engineering (408) 943-2685 Fredrick Whitwer Principal Reliability Engineer (408) 943-2722 Cypress Semiconductor PSoC Mixed Signal Array Neutron Product Family, S4AD-5, Fab 2 Device: CY8C21x34 QTP# 042505, V, 2.0 Page 2 of 10 April 2006 PRODUCT QUALIFICATION HISTORY Qual Report Description of Qualification Purpose Date Comp 010702 New Technology S4AD-5 / New Product, Programmable Clock Generator, CY2414ZC, its product family and bond option. Apr 01 042505 PSoC 8C21001A Neutron Product Family on SONOS S4AD-5 Technology, Fab2 Dec 04 Cypress Semiconductor PSoC Mixed Signal Array Neutron Product Family, S4AD-5, Fab 2 Device: CY8C21x34 QTP# 042505, V, 2.0 Page 3 of 10 April 2006 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Qualify New Device PSoC 8C21001A Neutron Product Family on S4AD-5 Technology, Fab2 Marketing Part #: CY8C21234, CY8C21334, CY8C21434, CY8C21534, CY8C21634 Device Description: 3.3V and 5V Industrial 24MHz Programmable System on Chip available in 16-Lead SOIC, 20-Lead SSOP and 32 MLF packages Cypress Division: Cypress Semiconductor Corporation – Consumer & Computation Division Overall Die (or Mask) REV Level (pre-requisite for qualification): Rev. A What ID markings on Die: 8C21001A TECHNOLOGY/FAB PROCESS DESCRIPTION S4AD-5 Number of Metal Layers: 2 Metal Composition: Metal 1: 500A Ti/6,000A Al 0.5% Cu /1,200A TiW Metal 2: 500A Ti/8,000A Al 0.5% Cu/300A TiW Passivation Type and Materials: 3,000A TEOs / 6,000A Si3N4 Free Phosphorus contents in top glass layer (%): 0% Number of Transistors in Device: 100,000 Number of Gates in Device 10,000 Generic Process Technology/Design Rule (µ-drawn): Single Poly, Double Metal, 0.35 µm Gate Oxide Material/Thickness (MOS): SiO2 / 110A Name/Location of Die Fab (prime) Facility: Cypress Semiconductor - Round Rock, TX Die Fab Line ID/Wafer Process ID: Fab2, S4AD-5 CTI, SONOS PACKAGE AVAILABILITY PACKAGE ASSEMBLY SITE FACILITY 16-Lead SOIC OSE Taiwan (TAIWN-T) 20-Lead SSOP Cypress Philippines (CML-RA) 32-Lead MLF Amkor-Seoul Korea (SEOL-L) Note: Package Qualification details upon request. Cypress Semiconductor PSoC Mixed Signal Array Neutron Product Family, S4AD-5, Fab 2 Device: CY8C21x34 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: Mold Compound Flammability Rating: SP20 20-Lead Shrunk Small Outline Package (SSOP) Hitachi CEL9220HF V-O per UL94 Oxygen Rating Index: >28% Lead Frame Material: Copper Lead Finish, Composition / Thickness: 100% Pure Tin Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: 100% Saw Die Attach Supplier: Ablestik Die Attach Material: 8340 Die Attach Method: Dispensing Bond Diagram Designation: 10-06096 Wire Bond Method: Thermosonic Wire Material/Size: Au, 1.0mil Thermal Resistance Theta JA °C/W: 123°C/W Package Cross Section Yes/No: No Assembly Process Flow: 49-35032 Name/Location of Assembly (prime) facility: OSE Taiwan (TAIWN-T) (20 SSOP) ELECTRICAL TEST / FINISH DESCRIPTION Test Location: CML-R Fault Coverage: 100% Note: Please contact a Cypress Representative for other packages availability. QTP# 042505, V, 2.0 Page 4 of 10 April 2006 Cypress Semiconductor PSoC Mixed Signal Array Neutron Product Family, S4AD-5, Fab 2 Device: CY8C21x34 QTP# 042505, V, 2.0 Page 5 of 10 April 2006 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT Stress/Test Test Condition (Temp/Bias) Result P/F High Temperature Operating Life Dynamic Operating Condition, Vcc Max=3.8V, 150°C Early Failure Rate Dynamic Operating Condition, Vcc Max=5.5V, 125°C High Temperature Operating Life Dynamic Operating Condition, Vcc Max=3.8V, 150°C P 130°C, 3.63V, 85%RH Precondition: JESD22 Moisture Sensitivity Level 1 P P Latent Failure Rate High Accelerated Saturation Test (HAST) 168 Hrs, 85C/85%RH+3IR-Reflow, 235°C+0, -5°C Temperature Cycle MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C Precondition: JESD22 Moisture Sensitivity Level 1 P 168 Hrs, 85C/85%RH+3IR-Reflow, 235°C+0, -5°C Precondition: JESD22 Moisture Sensitivity Level 1 168 Hrs, 85C/85%RH+3IR-Reflow, 260°C+0, -5°C Pressure Cooker 121°C, 100%RH Precondition: JESD22 Moisture Sensitivity Level 1 P 168 Hrs, 85C/85%RH+3IR-Reflow, 235°C+0, -5°C Precondition: JESD22 Moisture Sensitivity Level 1 168 Hrs, 85C/85%RH+3IR-Reflow, 260°C+0, -5°C Data Retention 150°C ± 5°C No Bias P High Temperature Steady State life 150°C, 3.63V, Vcc Max P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V JESD22, Method A114-B P Electrostatic Discharge Human Body Model (ESD-HBM) 2,000V/2,200V MIL-STD-883, Method 3015.7 P Electrostatic Discharge Charge Device Model (ESD-CDM) 500V Cypress Spec. 25-00020 P Endurance Test MIL-STD-883, Method 883-1033 P Age Bond Strength 200C, 4hrs MIL-STD-883, Method 883-2011 P Current Density Cypress Spec 22-00029 P Low Temperature Operating Life -30C, 4.3V, 8MHZ P SEM Analysis MIL-STD-883, Method 883-2018-2 P Acoustic Microscopy Spec. 25-00104 P Dynamic Latch up Cypress Spec. 01-00081 P Latch up Sensitivity 125C, ± 300mA In accordance with JEDEC 17. Cypress Spec. 01-00081 P Cypress Semiconductor PSoC Mixed Signal Array Neutron Product Family, S4AD-5, Fab 2 Device: CY8C21x34 QTP# 042505, V, 2.0 Page 6 of 10 April 2006 RELIABILITY FAILURE RATE SUMMARY Device Tested/ Device Hours # Fails Activation Energy Thermal3 A.F Failure Rate High Temperature Operating Life Early Failure Rate1 1,007 Devices 0 N/A N/A 0 PPM High Temperature Operating Life1, 2 Long Term Failure Rate 180,000 DHRs 0 0 .7 170 30 FIT Stress/Test 1 Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. Chi-squared 60% estimations used to calculate the failure rate. 3 Thermal Acceleration Factor is calculated from the Arrhenius equation 2 E 1 1 AF = exp A - k T 2 T1 Where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Cypress Semiconductor PSoC Mixed Signal Array Neutron Product Family, S4AD-5, Fab 2 Device: CY8C21x34 QTP# 042505, V, 2.0 Page 7 of 10 April 2006 Reliability Test Data QTP #: Device Fab Lot # 010702 Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ACOUSTIC, MSL1 CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T COMP 15 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T COMP 15 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T COMP 15 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150C, 3.8V, Vcc Max) CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 48 1005 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T 48 1004 1 NON VISUAL CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T 48 1005 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 3.8V, Vcc Max) CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 80 120 0 CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 500 120 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T 80 120 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T 500 120 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T 80 120 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T 500 120 0 STRESS: AGE BOND STRENGTH CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T COMP 15 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T COMP 15 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T COMP 15 0 TAIWN-T COMP 3 0 500 48 0 STRESS: DYNAMIC LATCH-UP TESTING (11.5V) CY2414ZC (7C841400A) 2101502 610106170/1/2 STRESS: LOW TEMPERATURE OPERATING LIFE (-30C, 4.3V) CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 3.63V), PRE CONDITION 168 HR 85C/85%RH (MSL1) CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 128 50 0 CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 256 50 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T 128 48 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T 128 48 0 Cypress Semiconductor PSoC Mixed Signal Array Neutron Product Family, S4AD-5, Fab 2 Device: CY8C21x34 QTP# 042505, V, 2.0 Page 8 of 10 April 2006 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # 010702 Assy Loc Duration Samp Rej Failure Mechanism STRESS: ESD-CHARGE DEVICE MODEL (500V) CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T COMP 9 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T COMP 9 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015 (2,200V) CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T COMP 9 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T COMP 9 0 COMP 10 0 STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015 (2,000V) CY2414ZC (7C841400A) 2103764 610106177 TAIWN-T STRESS: STATIC LATCH-UP TESTING (125C, 10V, ±300mA) CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T COMP 3 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T COMP 3 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T COMP 3 0 STRESS: HIGH TEMP STEADY STATE LIFE TEST (150C, 3.63V) CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 80 80 0 CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 168 80 0 610106170/1/2 TAIWN-T COMP 45 0 STRESS: ENDURANCE TEST CY2414ZC (7C841400A) 2101502 STRESS: DATA RETENTION, PLASTIC, 150C CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 168 80 0 CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 552 80 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T 168 80 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T 552 80 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T 168 80 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T 552 80 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH), PRE CONDITION 168 HR 85C/85%RH (MSL1) CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 168 50 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T 168 49 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T 168 51 0 Cypress Semiconductor PSoC Mixed Signal Array Neutron Product Family, S4AD-5, Fab 2 Device: CY8C21x34 QTP# 042505, V, 2.0 Page 9 of 10 April 2006 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # 010702 Assy Loc Duration Samp Rej STRESS: TC COND. C -65C TO 150C, PRECONDITION 168 HRS 85C/85%RH (MSL1) CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 300 50 0 CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 500 50 0 CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 1000 50 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T 300 50 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T 500 50 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T 1000 50 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T 300 50 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T 500 50 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T 1000 49 0 Failure Mechanism Cypress Semiconductor PSoC Mixed Signal Array Neutron Product Family, S4AD-5, Fab 2 Device: CY8C21x34 QTP# 042505, V, 2.0 Page 10 of 10 April 2006 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # 042505 Assy Loc Duration Samp Rej Failure Mechanism STRESS: ESD-CHARGE DEVICE MODEL, (500V) CY8C21334 (8C21334A) 2425372 610443723 TAIWN-T COMP 9 0 9 0 3 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V) CY8C21334 (8C21334A) 2425372 610443723 TAIWN-T COMP STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, (2,200V) CY8C21334 (8C21334A) 2425372 610443723 TAIWN-T COMP STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 5.5V, Vcc Max) CY8C21334 (8C21334A) 2427548 610458304N TAIWN-T 96 1007 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH), PRE CONDITION 168 HR 85C/85%RH (MSL1) CY8C21334 (8C21334A) 2425372 610443723 TAIWN-T 168 45 0 CY8C21334 (8C21334A) 2425372 610443723 TAIWN-T 288 45 0 3 0 STRESS: STATIC LATCH-UP TESTING (125C, 11V, ±300mA) CY8C21334 (8C21334A) 2425372 610443723 TAIWN-T COMP STRESS: TC COND. C -65C TO 150C, PRECONDITION 168 HRS 85C/85%RH (MSL1) CY8C21334 (8C21334A) 2425372 610443723 TAIWN-T 300 45 0 CY8C21334 (8C21334A) 2425372 610443723 TAIWN-T 500 45 0