Document No.001-88014 Rev. ** ECN # 4033666 Cypress Semiconductor Product Qualification Report QTP# 075103 June 2013 SONOS 4 DERIVATIVE POWER PSoC PHOENIX S4AD-HV40 TECHNOLOGY, FAB 4 CY8CLED04D01 PowerPSoC Intelligent LED Driver, 4-Channel, 1 Amp CY8CLED04D02 PowerPSoC Intelligent LED Driver, 4-Channel, 0.5 Amp CY8CLED04G01 PowerPSoC Intelligent LED Driver, 4-Channel, 1 Amp, Gate Driver PowerPSoC Intelligent LED Driver, 4-Channel, 1 Amp, On Chip Debugger PowerPSoC Intelligent LED Driver, 3-Channel, 1 Amp PowerPSoC Intelligent LED Driver, 3-Channel, 0.5 Amp PowerPSoC Intelligent LED Driver, 3-Channel, 1 Amp, Gate Driver PowerPSoC Intelligent LED Driver, 2-Channel, 1 Amp PowerPSoC Intelligent LED Driver, 1-Channel, 1 Amp CY8CLED04DOCD1 CY8CLED03D01 CY8CLED03D02 CY8CLED03G01 CY8CLED02D01 CY8CLED01D01 CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Zhaomin Ji Principal Reliability Engineer (408) 432-7021 Mira Ben-Tzur Quality Engineering Director (408) 943-2675 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 8 Document No.001-88014 Rev. ** ECN # 4033666 QUALIFICATION HISTORY Qual Report 075103 Description of Qualification Purpose To qualify S4 SONOS technology derivative S4AD-HV40 Power PSoC Phoenix device, fabricated at Cypress CMI Fab4 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 8 Date Comp May 2009 Document No.001-88014 Rev. ** ECN # 4033666 PRODUCT DESCRIPTION (for qualification) Purpose: Qualification of S4AD-HV40 technology & Phoenix Power PSoC product at Cypress CMI, Fab4 Marketing Part #: CY8CLED04D01, CY8CLED04D02, CY8CLED04G01, CY8CLED04DOCD1, CY8CLED03D01, CY8CLED03D02, CY8CLED03G01, CY8CLED02D01, CY8CLED01D01 Device Description: Phoenix (4 Channels @ 36V, 1A) Power PSoC device, a SONOS 4 technology derivative (S4ADHV40) product, fabricated at Cypress CMI Fab4. Device 8C42344A (MKT Part# CY8CLED04D01-56LTXI) is in a 56 lead QFN package (8x8x1mm) assembled at CARSEM Malaysia Cypress Division: Cypress Semiconductor Corporation – DCD TECHNOLOGY/FAB PROCESS DESCRIPTION – S8TEE-5R Number of Metal Layers: 2 Passivation Type and Materials: Metal Composition: Metal 1: TiW / Al / TiW (7150Å) Metal 2: TiW / Al / TiW (9150Å) TEOS/Nitride (5950Å/5700Å) Generic Process Technology/Design Rule (drawn): SONOS 4 / 0.5µm Gate Oxide Material/Thickness (MOS): SiO2 110Å Name/Location of Die Fab (prime) Facility: CMI, Fab4 S4AD-HV40 / Wafer Process ID: Fab4 / S4AD-HV40 PACKAGE / ASSEMBLY INFORMATION Assembly Site: CARSEM, Malaysia Package: 56 QFN Mold Compound: GE7470L-A Die Attach: AMK-06 Die Size: 187 mils x 177 mils Leadframe Design: N/A Leadfinish/solder ball: NiPdAu Wire (Al/Au) diam: 0.8 mil MSL: 3 Solder Reflow Temp: 260C Note: Package Qualification details upon request Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 8 Document No.001-88014 Rev. ** ECN # 4033666 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT Stress/Test Test Condition (Temp/Bias) Result P/F Dynamic Operating Condition, 150°C, 5.5V/38V, 96 Hours JESD22-A-108-B P P Latent Failure Rate (LFR) Dynamic Operating Condition, 150°C, 5.5V/38V, 1000 Hours JESD22-A-108-B Endurance 50K Cycles @ 25C, Per datasheet P Data Retention 150°C, 1000 Hours P Temperature Cycle MIL-STD-883C, Method 1010, Condition C, -65 C to 150 C Precondition: JESD22 Moisture Sensitivity Level (192 Hrs., 30 C, 60% RH, 260C Reflow) 130°C, 5.5V/38V, 85%RH, JESD22-A-110-B Precondition: JESD22 Moisture Sensitivity Level (192 Hrs., 30 C, 60% RH, 260C Reflow) P Pressure Cooker JESD22-A102, 121 C, 100%RH, 15 PSIG Precondition: JESD22 Moisture Sensitivity Level (192 Hrs., 30 C, 60% RH, 260C Reflow) P Precondition JESD22 Moisture Sensitivity P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V, JESD22-A114E Electrostatic Discharge Charge Device Model (ESD-CDM) 500V, JESD22-C101C Latch-up Sensitivity 125°C, EIA/JESD78 41V, 8.25V,± 200mA P Age Bond Strength Mil-Std-883, Method 2011 P Acoustic (M3) J-STD-020 Precondition: JESD22 Moisture Sensitivity Level P SEM X-Section XY audit at center wafer and edge wafer P Low Temperature Operating Life Test Dynamic Operating Condition, 5.5V/38V, -30°C, 500 Hours P High Temperature Operating Life Early Failure Rate (EFR) High Temperature Operating Life High Accelerated Saturation Test (HAST) P P P Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 8 Document No.001-88014 Rev. ** ECN # 4033666 RELIABILITY FAILURE RATE SUMMARY Stress/Test Device Tested/ Device Hours # Fails Activation Energy Thermal AF4 Failure Rate High Temperature Operating Life Early Failure Rate 3195 Devices 1 N/A N/A 313 PPM High Temperature Operating Life1,2, Long Term Failure Rate 627,000 DHRs 0 0.7 55 26 FITs 1 2 3 Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 8 Document No.001-88014 Rev. ** ECN # 4033666 Reliability Test Data QTP #: Device STRESS: Fab Lot # Assy Lot # 075103 Assy Loc Duration Samp Rej HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 5.5V/38V CY8CLED04DOCD1 (8C42344A) 4835764 610848989 CA-Malaysia 96 1161 1 CY8CLED04D01 (8C42344A) 4845231 610900704 CA-Malaysia 96 540 0 CY8CLED04G01 (8C42344A) 4851730 610910255 CA-Malaysia 96 1128 0 CY8CPWR01 (8C42344A) 4901552 610910254 CA-Malaysia 96 366 0 STRESS: 610848989 CA-Malaysia 1000 210 0 CY8CLED04D01 (8C42344A) 4845231 610900704 CA-Malaysia 1000 210 0 CY8CLED04G01 (8C42344A) 4851730 610910255 CA-Malaysia 1000 207 0 610851402 CA-Malaysia COMP 88 0 CY8CLED04DOCD1 (8C42344A) 4817222 610833422 CA-Malaysia 1000 90 0 CY8CLED04DOCD1 (8C42344A) 4835764 610851402 CA-Malaysia 1000 82 0 CY8CLED04G01 (8C42344A) 4851730 610910255 CA-Malaysia 1000 80 0 CY8CPWR01 (8C42344A) 4901552 610910254 CA-Malaysia 1000 80 0 ENDURANCE, 50K CYCLES CY8CLED04DOCD1 (8C42344A) 4835764 STRESS: STRESS: DATA RETENTION, 150C ESD-HUMAN BODY CIRCUIT PER JEDEC EIA/JESD22-A114-B, 2,200V CY8CLED04DOCD1 (8C42344A) 4835764 610848989 CA-Malaysia COMP 8 0 CY8CLED04D01 (8C42344A) 610900704 CA-Malaysia COMP 8 0 STRESS: 4845231 ESD-CHARGE DEVICE MODEL, 500V CY8CLED04DOCD1 (8C42344A) 4835764 610848989 CA-Malaysia COMP 9 0 CY8CLED04D01 (8C42344A) 610900704 CA-Malaysia COMP 9 0 STRESS: Non-visual, FA#075103-1E1 HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 125C, 5.5V/38V CY8CLED04DOCD1 (8C42344A) 4835764 STRESS: Failure Mechanism 4845231 HI-ACCEL SATURATION TEST, 130C, 85%RH, 5.5V/38V, PRE COND 192 HR 30C/60%RH, MSL3 CY8CLED04DOCD1 (8C42344A) 4835764 610848989 CA-Malaysia 128 20 0 CY8CLED04D01 (8C42344A) 4845231 610900704 CA-Malaysia 128 83 0 CY8CLED04G01 (8C42344A) 4851730 610910255 CA-Malaysia 128 80 0 STRESS: PRESSURE COOKER TEST, 121C, 100%RH, 15 Psig, PRE COND 192 HR 30C/60%RH, MSL3 CY8CLED04DOCD1 (8C42344A) 4817222 610833422 CA-Malaysia 168 100 0 CY8CLED04DOCD1 (8C42344A) 4835764 610848989 CA-Malaysia 168 90 0 CY8CLED04D01 (8C42344A) 610900704 CA-Malaysia 168 90 0 4845231 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 8 Document No.001-88014 Rev. ** ECN # 4033666 Reliability Test Data QTP #: Device STRESS: Fab Lot # Assy Lot # 075103 Assy Loc Duration Samp Rej TEMPERATURE CYCLE COND. C, -65C TO 150C, PRE COND 192 HRS 30C/60%RH, MSL3 CY8CLED04D01 (8C42344A) 4817222 610832110 CA-Malaysia 1000 89 0 CY8CLED04DOCD1 (8C42344A) 4835764 610848989 CA-Malaysia 1000 90 0 CY8CLED04D01 (8C42344A) 610900704 CA-Malaysia 1000 90 0 STRESS: 4845231 HIGH TEMPERATURE STORAGE, 150C, PRE COND 192 HRS 30C/60%RH, MSL3 CY8CLED04DOCD1 (8C42344A) 4835764 STRESS: 610848989 CA-Malaysia 1000 90 0 500 54 0 LOW TEMPERATURE OPERATING LIFE, -30C, 5.5V/38V CY8CLED04G01 (8C42344A) STRESS: 4851730 610910255 CA-Malaysia STATIC LATCH-UP TESTING, 125C, 8.25V/41V, ±200mA CY8CLED04D01 (8C42344A) 4845231 610900704 CA-Malaysia COMP 9 0 CY8CLED04D01 (8C42344A) 4845231 610900704 CA-Malaysia COMP 10 0 CY8CLED04G01 (8C42344A) 4851730 610910255 CA-Malaysia COMP 10 0 4817222 610832110 CA-Malaysia COMP 15 0 CY8CLED04DOCD1 (8C42344A) 4835764 610848989 CA-Malaysia COMP 15 0 CY8CLED04D01 (8C42344A) 610900704 CA-Malaysia COMP 15 0 STRESS: STRESS: Failure Mechanism AGE BOND ACOUSTIC-MSL3 CY8CLED04D01 (8C42344A) 4845231 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 8 Document No.001-88014 Rev. ** ECN # 4033666 Document History Page Document Title: FAB 4 Document Number: QTP # 075103 : SONOS 4 DERIVATIVE POWER PSoC PHOENIX S4AD-HV40 TECHNOLOGY, 001-88014 Rev. ECN Orig. of No. Change ** 4033666 ILZ Description of Change Initial Spec Release Qualification report published on Cypress.com is documented on memo HGA-1001 and not in spec format. Initiated spec for QTP 075103 and all data from Memo HGA-1001 was transferred to qualification report spec template. Deleted package qualification details on package qualification history table. Deleted Cypress reference Spec and replaced with Industry Standards Updated package availability based on current qualified test & assembly site. Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 8