Cypress Semiconductor Product Qualification Report QTP# 032508 VERSION 4.0 January 2008 PSoC ™ Mixed Signal Array Product Family S4AD-5 Technology, Fab 2 CY8C22113 CY8C22213 CY8C22113A CY8C22213A PSoC ™ Mixed Signal Microcontroller PSoC ™ Mixed Signal Microcontroller CY8C24123 CY8C24223 CY8C24423 PSoC ™ Mixed Signal Microcontroller CY8C24123A CY8C24223A CY8C24423A PSoC ™ Mixed Signal Microcontroller CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Fredrick Whitwer Principal Reliability Engineer (408) 943-2722 Mira Ben-Tzur Quality Engineering Director (408) 943-2685 Cypress Semiconductor PSoC™ Mixed Signal Array Product Family on S4AD-5 Technology Device: CY8C22XXX/CY8C24XXX 032508 V.4.0 Page 2 of 12 January 2008 PRODUCT QUALIFICATION HISTORY Qual Report Description of Qualification Purpose Date Comp 010702 New Technology S4AD-5 / New Product, Programmable Clock Generator, CY2414ZC, its product family and bond option. Apr 01 032508 PSoC 8C22XX/8C24XXX Product Family on Industrial SONOS S4AD-5 Technology Mar 04 043104 PSoC 8C24XXXB (New Die Revision) to fix know errata and improve silicon performance Jul 04 073901 New Metal 2 (MM2) masks on Lithium Device (8C24001BT) on S4AD-5 Technology, Fab 2 Jan 08 Cypress Semiconductor PSoC™ Mixed Signal Array Product Family on S4AD-5 Technology Device: CY8C22XXX/CY8C24XXX 032508 V.4.0 Page 3 of 12 January 2008 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Qualify CY8C22xxx/CY8C24xxx Product Family on Industrial SONOS S4AD-5 Technology, Fab 2 Marketing Part #: CY8C22113, CY8C22213, CY8C22113A, CY8C22213A, CY8C24123, CY8C24223, CY8C24423, CY8C24123A, CY8C24223A, CY8C24423A Device Description: 3.3V & 5V Industrial 24MHz Programmable System on a Chip available in 8/20/28-Lead PDIP, 8/20/28-Lead SOIC, 20/28-Lead SSOP and 32-Lead MLF Cypress Division: Cypress Semiconductor Corporation – Consumer and Computation Division (CCD) TECHNOLOGY/FAB PROCESS DESCRIPTION Number of Metal Layers: 2 Metal Composition: S4AD-5 Metal 1: 500A Ti/6,000A Al 0.5% Cu /1,200A TiW Metal 2: 500A Ti/8,000A Al 0.5% Cu/300A TiW Passivation Type and Materials: 3,000A TeOs / 6,000A Si3N4 Free Phosphorus contents in top glass layer(%): 0% Number of Transistors in Device: 150,000 Number of Gates in Device 25,000 Generic Process Technology/Design Rule (µ-drawn): 1P2M/0.35um Gate Oxide Material/Thickness (MOS): SiO2 / 110°A Name/Location of Die Fab (prime) Facility: Cypress Semiconductor – CTI Round Rock, TX Die Fab Line ID/Wafer Process ID: Fab2, S4AD-5CTI SONOS ELECTRICAL TEST / FINISH DESCRIPTION Test Location: Cypress Philippines (CML-R), Omedata-Indonesia Fault Coverage: 100% Cypress Semiconductor PSoC™ Mixed Signal Array Product Family on S4AD-5 Technology Device: CY8C22XXX/CY8C24XXX 032508 V.4.0 Page 4 of 12 January 2008 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: Mold Compound Flammability Rating: P8/20/28 8/20/28-Lead Plastic Dual-In-Line Package (PDIP) Nitto MP8000CH V-O per UL94 Oxygen Rating Index: >28% Lead Frame Material: Copper Lead Finish, Composition / Thickness: Solder Plated Sn 85%, 15% Pb Die Backside Preparation Method/Metallization: Grinding Die Separation Method: Sawing 100% Die Attach Supplier: Ablestik Die Attach Material: 8361H Die Attach Method: Epoxy Bond Diagram Designation: 10-05192, 10-05195, 10-05197 Wire Bond Method: Thermosonic Wire Material/Size: Au, 1.0mil Thermal Resistance Theta JA °C/W: 123°C/W, 108°C/W, 69°C/W Package Cross Section Yes/No: N/A Assembly Process Flow: 49-70027 Name/Location of Assembly (prime) facility: Omedata-Indonesia PACKAGE AVAILABILITY PACKAGE ASSEMBLY SITE FACILITY 8/20/28 Lead PDIP INDNS-O 8-Lead SOIC PHIL-M 20/28-Lead SOIC CML-R 20/28-Lead SSOP CML-RA , PHIL-M, TAIWAN-T 32-Lead MLF MALAYSIA-CA, SEOL-L Cypress Semiconductor PSoC™ Mixed Signal Array Product Family on S4AD-5 Technology Device: CY8C22XXX/CY8C24XXX 032508 V.4.0 Page 5 of 12 January 2008 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT Stress/Test Test Condition (Temp/Bias) Result P/F High Temperature Operating Life Dynamic Operating Condition, Vcc Max=5.75V, 125°C Early Failure Rate Dynamic Operating Condition, Vcc Max=3.8V, 150°C High Temperature Operating Life Dynamic Operating Condition, Vcc Max=5.75V, 125°C Latent Failure Rate Dynamic Operating Condition, Vcc Max=3.8V, 150°C P High Temperature Steady State life 150°C, 3.63V, Vcc Max P Low Temperature Operating Life -30C, 4.3V, 8MHZ P High Accelerated Saturation Test (HAST) 130C, 5.75V/3.63V, 85%RH, Precondition: JESD22 Moisture Sensitivity MSL1 168 Hrs, 85°C/85%RH+3IR-Reflow, 235°C+0, -5°C P Temperature Cycle MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C Precondition: JESD22 Moisture Sensitivity MSL 1 168 Hrs, 85°C/85%RH+3IR-Reflow, 235°C+0, -5°C 121°C, 100%RH Precondition: JESD22 Moisture Sensitivity MSL 1 168 Hrs, 85°C/85%RH+3IR-Reflow, 235°C+0, -5°C Pressure Cooker P P P Age Bond Strength 200C, 4hrs MIL-STD-883, Method 883-2011 P Endurance Test MIL-STD-883, Method 883-1033 P Data Retention 150°C ± 5°C No Bias P Dynamic Latch up Cypress Spec. 01-00081 P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V JESD22, Method A114-B P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V/2,200V MIL-STD-883, Method 3015.7 P Electrostatic Discharge Device Model (ESD-CDM) 500V Cypress Spec. 25-00020 P Latch up Sensitivity Charge 125°C, 11/11.5V, ± 300mA In accordance with JEDEC 17. Cypress Spec. 01-00081 P Cypress Semiconductor PSoC™ Mixed Signal Array Product Family on S4AD-5 Technology Device: CY8C22XXX/CY8C24XXX 032508 V.4.0 Page 6 of 12 January 2008 RELIABILITY FAILURE RATE SUMMARY Device Tested/ Device Hours # Fails Activation Energy Thermal3 A.F Failure Rate High Temperature Operating Life Early Failure Rate1 1,005 Devices 0 N/A N/A 0 PPM High Temperature Operating Life1,2 Long Term Failure Rate 283,794 DHRs 0 0 .7 55 19 FIT Stress/Test 1 2 3 Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation ⎡E ⎡ 1 1 ⎤ ⎤ AF = exp ⎢ A ⎢ - ⎥ ⎥ ⎣ k ⎣ T 2 T1 ⎦ ⎦ where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Cypress Semiconductor PSoC™ Mixed Signal Array Product Family on S4AD-5 Technology Device: CY8C22XXX/CY8C24XXX 032508 V.4.0 Page 7 of 12 January 2008 Reliability Test Data QTP #: Device Fab Lot # 010702 Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ACOUSTIC-MSL1 CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T COMP 15 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T COMP 15 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T COMP 15 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150C, 3.8V, Vcc Max) CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 48 1005 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T 48 1004 1 NON VISUAL CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T 48 1005 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 3.8V, Vcc Max) CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 80 120 0 CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 500 120 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T 80 120 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T 500 120 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T 80 120 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T 500 120 0 STRESS: AGE BOND STRENGTH CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T COMP 15 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T COMP 15 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T COMP 15 0 TAIWN-T 500 48 0 STRESS: LOW TEMPERATURE OPERATING LIFE (-30C, 4.3V) CY2414ZC (7C841400A) 2101502 610106170/1/2 STRESS: ESD-CHARGE DEVICE MODEL (500V) CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T COMP 9 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T COMP 9 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015 (2,000V) CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T COMP 9 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T COMP 9 0 CY2414ZC (7C841400A) 2103764 610106177 TAIWN-T COMP 10 0 Cypress Semiconductor PSoC™ Mixed Signal Array Product Family on S4AD-5 Technology Device: CY8C22XXX/CY8C24XXX 032508 V.4.0 Page 8 of 12 January 2008 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # 010702 Assy Loc Duration Samp Rej Failure Mechanism STRESS: STATIC LATCH-UP TESTING (125C, 10V, ±300mA) CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T COMP 3 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T COMP 3 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T COMP 3 0 TAIWN-T COMP 3 0 STRESS: DYNAMIC LATCH-UP TESTING (11.5V) CY2414ZC (7C841400A) 2101502 610106170/1/2 STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 3.63V), PRE COND 168 HR 85C/85%RH, MSL1 CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 128 50 0 CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 256 50 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T 128 48 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T 128 48 0 STRESS: HIGH TEMP STEADY STATE LIFE TEST (150C, 3.63V) CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 80 80 0 CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 168 80 0 610106170/1/2 TAIWN-T COMP 45 0 STRESS: ENDURANCE TEST CY2414ZC (7C841400A) 2101502 STRESS: DATA RETENTION, PLASTIC, 150C CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 168 80 0 CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 552 80 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T 168 80 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T 552 80 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T 168 80 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T 552 80 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH), PRE COND 168 HR 85C/85%RH, MLS1 CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 168 50 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T 168 49 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T 168 51 0 Cypress Semiconductor PSoC™ Mixed Signal Array Product Family on S4AD-5 Technology Device: CY8C22XXX/CY8C24XXX 032508 V.4.0 Page 9 of 12 January 2008 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # 010702 Assy Loc Duration Samp Rej STRESS: TC COND. C -65C TO 150C, PRE COND 168 HRS 85C/85%RH, MSL1 CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 300 50 0 CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 500 50 0 CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 1000 50 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T 300 50 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T 500 50 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T 1000 50 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T 300 50 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T 500 50 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T 1000 49 0 Failure Mechanism Cypress Semiconductor PSoC™ Mixed Signal Array Product Family on S4AD-5 Technology Device: CY8C22XXX/CY8C24XXX 032508 V.4.0 Page 10 of 12 January 2008 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # 032508 Assy Loc Duration Samp Rej STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 5.75V, Vcc Max CY8C24423 (8C24423A) 2340016 510400896 INDNS-O 96 681 0 CY8C24423 (8C24423A) 2344365 510400385 INDNS-O 96 700 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 125C, 5.75V, Vcc Max CY8C24423 (8C24423A) 2332416 510307853 INDNS-O 250 429 0 CY8C24423 (8C24423A) 2332416 510307853 INDNS-O 500 429 0 INDNS-O COMP 9 0 COMP 9 0 INDNS-O COMP 3 0 STRESS: ESD-CHARGE DEVICE MODEL, 500V CY8C24423 (8C24423A) 2332416 510307815 STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,200V CY8C24423 (8C24423A) 2332416 510307815 INDNS-O STRESS: STATIC LATCH-UP TESTING, 125C, 11V, ±300mA CY8C24423 (8C24423A) 2332416 510307815 STRESS: DATA RETENTION, 150°C, No Bias CY8C24423 (8C24423A) 2332416 510307814/5 INDNS-O 250 158 0 CY8C24423 (8C24423A) 2332416 510307814/5 INDNS-O 500 158 0 CY8C24223 (8C24223A) 2344365 510400385 INDNS-O 250 160 0 CY8C24223 (8C24223A) 2344365 510400385 INDNS-O 500 159 0 INDNS-O 128 47 0 STRESS: HI-ACCEL SATURATION TEST, 130C, 85%RH, 5.75V CY8C22213 (8C22213A) STRESS 2332416 510308327 PRESSURE COOKER TEST, 121C, 100%RH CY8C24423 (8C24423A) 2332416 510307814/5 INDNS-O 168 44 0 CY8C24423 (8C24423A) 2332416 510307814/5 INDNS-O 288 44 0 CY8C24223 (8C24223A) 2344365 510400385 INDNS-O 168 50 0 CY8C24223 (8C24223A) 2344365 510400385 INDNS-O 288 49 0 STRESS: TC COND. C -65C TO 150C CY8C24423 (8C24423A) 2332416 510307814/5 INDNS-O 300 45 0 CY8C24223 (8C24223A) 2333449 510309073 INDNS-O 300 45 0 CY8C24223 (8C24223A) 2333449 510309073 INDNS-O 500 45 0 CY8C24223 (8C24223A) 2333449 510309073 INDNS-O 1000 45 0 CY8C24223 (8C24223A) 2344365 510400385 INDNS-O 300 50 0 CY8C24223 (8C24223A) 2344365 510400385 INDNS-O 500 49 0 Failure Mechanism Cypress Semiconductor PSoC™ Mixed Signal Array Product Family on S4AD-5 Technology Device: CY8C22XXX/CY8C24XXX 032508 V.4.0 Page 11 of 12 January 2008 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # Assy Loc 043104 Duration Samp Rej STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 5.75V, Vcc Max CY8C24423A (8C24423B) 2419761 510406293 INDNS-O 96 1005 0 INDNS-O COMP 9 0 9 0 COMP 3 0 COMP 3 0 STRESS: ESD-CHARGE DEVICE MODEL, 500V CY8C24423A (8C24423B) 2419761 510405650 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 2,200V CY8C24423A (8C24423B) 2419761 510405650 INDNS-O COMP STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,200V CY8C24423A (8C24423B) 2419761 510405650 INDNS-O STRESS: STATIC LATCH-UP TESTING, 125C, 11.5V, ±300mA CY8C24423A (8C24423B) 2419761 510405650 INDNS-O Failure Mechanism Cypress Semiconductor PSoC™ Mixed Signal Array Product Family on S4AD-5 Technology Device: CY8C22XXX/CY8C24XXX 032508 V.4.0 Page 12 of 12 January 2008 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # Assy Loc 073901 Duration Samp Rej Failure Mechanism STRESS: SORT YIELD CY8C24423A (8C24423E) 2728024 COMP COMPARABLE 2728024 COMP COMPARABLE STRESS: ETEST YIELD CY8C24423A (8C24423E)