BCX 41 BSS 64 NPN Silicon AF and Switching Transistor BCX 41 BSS 64 High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary types: BCX 42, BSS 63 (PNP) ● Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) BCX 41 BSS 64 EKs AMs Q62702-C1659 Q62702-S535 B SOT-23 E C Maximum Ratings Parameter Symbol Values Unit BSS 64 BCX 41 Collector-emitter voltage VCE0 80 125 Collector-base voltage VCB0 120 125 Emitter-base voltage VEB0 5 5 Collector current IC 800 Peak collector current ICM 1 Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 79 ˚C Ptot 330 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg V mA A mA – 65 … + 150 Thermal Resistance Junction - ambient 2) Rth JA ≤ 285 Junction - soldering point Rth JS ≤ 215 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BCX 41 BSS 64 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Values Parameter Symbol DC characteristics Collector-emitter breakdown voltage IC = 10 mA Collector-base breakdown voltage1) IC = 100 µA Collector cutoff current VCE = 100 V TA = 85 ˚C TA = 125 ˚C Collector-emitter saturation voltage1) IC = 300 mA, IB = 30 mA IC = 4 mA, IB = 0.4 mA IC = 50 mA, IB = 15 mA typ. max. 80 125 – – – – 120 125 – – – – 5 – – – – – – – – – – 100 100 20 20 V V(BR)CB0 BSS 64 BCX 41 V(BR)EB0 ICB0 BSS 64 BCX 41 BSS 64 BCX 41 BCX 41 BCX 41 IEB0 – – – – 10 75 – – 100 25 – 20 – – 63 40 – 60 80 80 55 – – – – – – – – – V VCEsat – – – – – – 0.9 0.7 3.0 VBEsat – – 1.4 Transition frequency IC = 20 mA, VCE = 5 V, f = 20 MHz fT – 100 – MHz Output capacitance VCB = 10 V, f = 1 MHz 1) Pulse test: t ≤ 300 µs, D = 2 % Cobo – 12 – pF Base-emitter saturation voltage1) IC = 300 mA, IB = 30 mA BCX 41 BSS 64 BSS 64 nA – hFE BCX 41 BSS 64 BSS 64 BSS 64 BSS 64 BCX 41 BCX 41 nA nA µA µA µA ICE0 Emitter cutoff current VEB = 4 V DC current gain1) IC = 100 µA, VCE = 1 V IC = 1 mA, VCE = 1 V IC = 4 mA, VCE = 1 V IC = 10 mA, VCE = 1 V IC = 20 mA, VCE = 1 V IC = 100 mA, VCE = 1 V IC = 200 mA, VCE = 1 V min. V(BR)CE0 BSS 64 BCX 41 Emitter-base breakdown voltage IE = 10 µA Collector cutoff current VCB = 80 V VCB = 100 V VCB = 80 V, TA = 150 ˚C VCB = 100 V, TA = 150 ˚C Unit BCX 41 AC characteristics Semiconductor Group 2 BCX 41 BSS 64 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Collector current IC = f (VBE) VCE = 1 V Permissible pulse load Ptot max/Ptot DC = f (tp) Transition frequency fT = f (Ic) VCE = 5 V Semiconductor Group 3 BCX 41 BSS 64 Base-emitter saturation voltage IC = f (VBEsat) hFE = 10 Collector-emitter saturation voltage IC = f (VCEsat) hFE = 10 Collector cutoff current ICB0 = f (TA) VCB = VCE max DC current gain hFE = f (IC) VCE = 1 V Semiconductor Group 4