Cypress Semiconductor Product Qualification Report QTP# 044602 VERSION 1.0 June 2005 PSoC Mixed Signal Array Family S4AD-5CTI Technology, Fab 2 CY8C24094 CY8C24494 CY8C24694 CY8C24794 PSoC Mixed Signal MicroController CY7C64215 CY7C64235 CY7C642DK enCoRe III FULL SPEED USB Peripheral Controller CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Fredrick Whitwer Staff Reliability Engineer (408) 943-2722 Sabbas Daniel Quality Engineering Director (408) 943-2685 Cypress Semiconductor PSoC Radon Device Family, S4AD-5CTI, Fab 2 Device: CY8C24x94, CY7C642xx QTP# 044602, V, 1.0 Page 2 of 12 June 2005 PRODUCT QUALIFICATION HISTORY Qual Report Description of Qualification Purpose Date Comp 010702 New Technology S4AD-5, New Product Programmable Clock Generator, CY2414ZC product family and bond option. Apr 01 040901 PSoC 8C29xxxA New Device Product Family on S4AD-5CTI Technology, Fab2 Oct 04 044602 PSoC 8C24x94 Radon Device Product Family on S4AD-5CTI Technology, Fab2 Jun 05 Cypress Semiconductor PSoC Radon Device Family, S4AD-5CTI, Fab 2 Device: CY8C24x94, CY7C642xx QTP# 044602, V, 1.0 Page 3 of 12 June 2005 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Qualify New device CY8C24x94 Radon product family in Technology S4D-5CTI in Fab 2 Marketing Part #: CY8C24094, CY8C24494, CY8C24694, CY8C24794, CY7C64215, CY7C64235,CY7C642DK Device Description: 3.3V Industrial, available in 28/48-lead SSOP, 56-lead MLF and 100 TQFP package Cypress Division: Cypress Microsystems Inc Subsidiary– (CMS) WA Overall Die (or Mask) REV Level (pre-requisite for qualification): What ID markings on Die: Rev. A 8C24094A TECHNOLOGY/FAB PROCESS DESCRIPTION Number of Metal Layers: 2 Metal Composition: S4AD-5CTI Metal 1: 500A Ti/6000A Al 0.5% Cu /1200A TiW Metal 2: 500A Ti/8000A Al 0.5% Cu/300A TiW Passivation Type and Materials: 3,000A TeOs / 6000A Si3N4 Free Phosphorus contents in top glass layer(%): 0% Number of Transistors in Device: 450,000 Number of Gates in Device 75,000 Generic Process Technology/Design Rule ( -drawn): Single Poly, Double Metal, 0.35 m Gate Oxide Material/Thickness (MOS): SiO2 / 110A Name/Location of Die Fab (prime) Facility: Cypress Semiconductor - Round Rock, TX Die Fab Line ID/Wafer Process ID: Fab2, S4AD-5 CTI SONOS PACKAGE AVAILABILITY PACKAGE ASSEMBLY SITE FACILITY 28/48-lead SSOP TAIWN-T, CML-R 56-lead MLF Korea-L 100-pin TQFP CML-R Note: Package Qualification details upon request. Cypress Semiconductor PSoC Radon Device Family, S4AD-5CTI, Fab 2 Device: CY8C24x94, CY7C642xx QTP# 044602, V, 1.0 Page 4 of 12 June 2005 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: Mold Compound Flammability Rating: SP28 28-Lead Shrunk Small Outline Package (SSOP) Hitachi CEL9220HF V-O per UL94 Oxygen Rating Index: >28% Lead Frame Material: Copper Lead Finish, Composition / Thickness: Pure Sn (100%) Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: Sawing 100% Die Attach Supplier: Ablestik Die Attach Material: 8340 Die Attach Method: Epoxy Bond Diagram Designation: 10-06565 Wire Bond Method: Thermosonic Wire Material/Size: Au, 1.0mil Thermal Resistance Theta JA °C/W: 95°C/W Package Cross Section Yes/No: N/A Assembly Process Flow: 49-35032 Name/Location of Assembly (prime) facility: OSE-Taiwan (T) ELECTRICAL TEST / FINISH DESCRIPTION Test Location: CML-R Fault Coverage: 100% Note: Please contact a Cypress Representative for other packages availability. Cypress Semiconductor PSoC Radon Device Family, S4AD-5CTI, Fab 2 Device: CY8C24x94, CY7C642xx QTP# 044602, V, 1.0 Page 5 of 12 June 2005 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT Stress/Test Test Condition (Temp/Bias) Result P/F High Temperature Operating Life Early Failure Rate High Temperature Operating Life Latent Failure Rate Dynamic Operating Condition, Vcc Max= 3.8V, 150°C Dynamic Operating Condition, Vcc Max= 5.5V, 125°C Dynamic Operating Condition, Vcc Max= 3.8V, 150°C Dynamic Operating Condition, Vcc Max= 5.5V, 125°C P Temperature Cycle MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C P P Precondition: JESD22 Moisture Sensitivity MSL 1 168 Hrs, 85C/85%RH+3IR-Reflow, 235°C+0, -5°C Precondition: JESD22 Moisture Sensitivity MSL 3 192 Hrs, 30C/60%RH+3IR-Reflow, 260°C+0, -5°C Pressure Cooker 121°C, 100%RH P MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C Precondition: JESD22 Moisture Sensitivity MSL 1 168 Hrs, 85C/85%RH+3IR-Reflow, 235°C+0, -5°C Precondition: JESD22 Moisture Sensitivity MSL 3 192 Hrs, 30C/60%RH+3IR-Reflow, 260°C+0, -5°C High Accelerated Saturation Test (HAST) 130°C, 3.63V/5.5V, 85%RH P Precondition: JESD22 Moisture Sensitivity MSL 1 168 Hrs, 85C/85%RH+3IR-Reflow, 235°C+0, -5°C Data Retention 150°C ± 5°C no bias P High Temperature Steady State Life 150°C, 3.63V, Vcc Max 2,200V JESD22, Method A114-B P P Age Bond Strength 2,000V, 2,200V MIL-STD-883, Method 3015.7 500V Cypress Spec. 25-00020 MIL-STD-883C, Method 2011 Acoustic Microscopy Cypress Spec. 25-00104 P Low Temperature Operating Life -30C, 4.3V, 8MHZ P Endurance Test MIL-STD-883C, Method 1033 P Dynamic Latchup Sensitivity Static Latchup Sensitivity Cypress Spec. 01-00081 125°C, 10V/10.5V, ± 300mA In accordance with JEDEC 17. Cypress Spec. 01-00081 P Electrostatic Discharge Human Body Model (ESD-HBM) Electrostatic Discharge Human Body Model (ESD-HMB) Electrostatic Discharge Charge Device Model (ESD-CDM) P P P P Cypress Semiconductor PSoC Radon Device Family, S4AD-5CTI, Fab 2 Device: CY8C24x94, CY7C642xx QTP# 044602, V, 1.0 Page 6 of 12 June 2005 RELIABILITY FAILURE RATE SUMMARY Device Tested/ Device Hours # Fails Activation Energy Thermal3 A.F Failure Rate4 High Temperature Operating Life Early Failure Rate @125C 1,008 Devices 0 N/A N/A 0 PPM High Temperature Operating Life1,2 Long Term Failure Rate 375,867 DHRs 0 0 .7 170 14 FITs Stress/Test 1 2 3 Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. 4 Fit Rate calculation based on combined device hours from QTP# 010702 & 040901 Cypress Semiconductor PSoC Radon Device Family, S4AD-5CTI, Fab 2 Device: CY8C24x94, CY7C642xx QTP# 044602, V, 1.0 Page 7 of 12 June 2005 Reliability Test Data QTP #: Device Fab Lot # 010702 Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ACOUSTIC-MSL1 CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T COMP 15 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T COMP 15 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T COMP 15 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 150C, 3.8V, Vcc Max CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 48 1005 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T 48 1004 1 NON VISUAL CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T 48 1005 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 150C, 3.8V, Vcc Max CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 80 120 0 CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 500 120 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T 80 120 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T 500 120 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T 80 120 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T 500 120 0 STRESS: AGE BOND STRENGTH CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T COMP 15 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T COMP 15 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T COMP 15 0 TAIWN-T COMP 3 0 TAIWN-T 500 48 0 STRESS: DYNAMIC LATCH-UP TESTING, 11.5V CY2414ZC (7C841400A) 2101502 610106170/1/2 STRESS: LOW TEMPERATURE OPERATING LIFE, -30C, 4.3V CY2414ZC (7C841400A) 2101502 610106170/1/2 STRESS: ESD-CHARGE DEVICE MODEL, 500V CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T COMP 9 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T COMP 9 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T COMP 9 0 610106170/1/2 TAIWN-T COMP 45 0 STRESS: ENDURANCE TEST CY2414ZC (7C841400A) 2101502 Cypress Semiconductor PSoC Radon Device Family, S4AD-5CTI, Fab 2 Device: CY8C24x94, CY7C642xx QTP# 044602, V, 1.0 Page 8 of 12 June 2005 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # 010702 Assy Loc Duration Samp Rej Failure Mechanism STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,000V CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T COMP 9 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T COMP 9 0 CY2414ZC (7C841400A) 2103764 610106177 TAIWN-T COMP 10 0 STRESS: STATIC LATCH-UP TESTING, 125C, 10V, ±300mA CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T COMP 3 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T COMP 3 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T COMP 3 0 STRESS: HI-ACCEL SATURATION TEST, 130C, 85%RH, 3.63V, PRE COND 168 HR 85C/85%RH, MSL1 CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 128 50 0 CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 256 50 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T 128 48 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T 128 48 0 STRESS: HIGH TEMP STEADY STATE LIFE TEST, 150C, 3.63V CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 80 80 0 CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 168 80 0 STRESS: DATA RETENTION, PLASTIC, 150C CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 168 80 0 CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 552 80 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T 168 80 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T 552 80 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T 168 80 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T 552 80 0 STRESS: PRESSURE COOKER TEST, 121C, 100%RH, PRE COND 168 HR 85C/85%RH, MSL1 CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 168 50 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T 168 49 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T 168 51 0 Cypress Semiconductor PSoC Radon Device Family, S4AD-5CTI, Fab 2 Device: CY8C24x94, CY7C642xx QTP# 044602, V, 1.0 Page 9 of 12 June 2005 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # 010702 Assy Loc Duration Samp Rej STRESS: TC COND. C -65C TO 150C, PRECONDITION 168 HRS 85C/85%RH, MSL1 CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 300 50 0 CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 500 50 0 CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 1000 50 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T 300 50 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T 500 50 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T 1000 50 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T 300 50 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T 500 50 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T 1000 49 0 Failure Mechanism Cypress Semiconductor PSoC Radon Device Family, S4AD-5CTI, Fab 2 Device: CY8C24x94, CY7C642xx QTP# 044602, V, 1.0 Page 10 of 12 June 2005 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # 040901 Assy Loc Duration Samp Rej STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 5.5V, Vcc Max CY8C29466 (8C29466A) 2415417 510405532 INDNS-O 96 1005 0 CY8C29466 (8C29466A) 2416473 510406227 INDNS-O 96 1002 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 125C, 5.5V, Vcc Max CY8C29466 (8C29466A) 2415417 510405532 INDNS-O 168 600 0 CY8C29466 (8C29466A) 2415417 510405532 INDNS-O 500 600 0 CY8C29466 (8C29466A) 2416473 510406227 INDNS-O 168 615 0 CY8C29466 (8C29466A) 2416473 510406227 INDNS-O 500 614 0 STRESS: DATA RETENTION, PLASTIC, 150C CY8C29466 (8C29466A) 2415417 510405532 INDNS-O 168 160 0 CY8C29466 (8C29466A) 2415417 510405532 INDNS-O 552 160 0 CY8C29466 (8C29466A) 2416473 510406227 INDNS-O 168 160 0 CY8C29466 (8C29466A) 24156473 510406227 INDNS-O 552 160 0 3 0 STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,200V CY8C29466 (8C29466A) 2415417 510405532 INDNS-O COMP STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 2,200V CY8C29466 (8C29466A) 2415417 510405532 INDNS-O COMP 9 0 INDNS-O COMP 9 0 COMP 3 0 INDNS-O 128 50 0 INDNS-O 168 50 0 STRESS: ESD-CHARGE DEVICE MODEL, 500V CY8C29466 (8C29466A) 2415417 510405532 STRESS: STATIC LATCH-UP TESTING, 125C, 10V, ±300mA CY8C29466 (8C29466A) 2415417 510405532 INDNS-O STRESS: HI-ACCEL SATURATION TEST, 130C, 85%RH, 5.5V CY8C29466 (8C29466A) 2415417 510405532 STRESS: PRESSURE COOKER TEST, 121C, 100%RH CY8C29466 (8C29466A) 2415417 510405532 Failure Mechanism Cypress Semiconductor PSoC Radon Device Family, S4AD-5CTI, Fab 2 Device: CY8C24x94, CY7C642xx QTP# 044602, V, 1.0 Page 11 of 12 June 2005 Reliability Test Data QTP #: Device Fab Lot # 040901 Assy Lot # Assy Loc Duration Samp Rej STRESS: TC COND. C -65C TO 150C CY8C29466 (8C29466A) 2415417 510405532 INDNS-O 300 50 0 CY8C29466 (8C29466A) 2415417 510405532 INDNS-O 500 50 0 CY8C29466 (8C29466A) 2415417 510405532 INDNS-O 1000 50 0 CY8C29466 (8C29466A) 2416473 510406227 INDNS-O 300 50 0 CY8C29466 (8C29466A) 2416473 510406227 INDNS-O 500 50 0 CY8C29466 (8C29466A) 2416473 510406227 INDNS-O 1000 50 0 Failure Mechanism Cypress Semiconductor PSoC Radon Device Family, S4AD-5CTI, Fab 2 Device: CY8C24x94, CY7C642xx QTP# 044602, V, 1.0 Page 12 of 12 June 2005 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # Assy Loc 044602 Duration Samp Rej STRESS: ESD-CHARGE DEVICE MODEL, 500V CY8C24794 (8C24794A) 2450856 610510563 TAIWAN-T COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 2,200V CY8C24494 (8C24494A) 2450856 CY8C24494 (8C24494A) 2447476 610511591 TAIWAN-T COMP 9 0 TAIWAN-T COMP 5 0 COMP 3 0 TAIWAN-T COMP 3 0 TAIWAN-T 80 80 0 STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,200V CY8C24494 (8C24494A) 2450856 610511591 TAIWAN-T STRESS: STATIC LATCH-UP TESTING, 125C, 10.5V, ±300mA CY8C24094 (8C24094A) 2450856 STRESS: DATA RETENTION, PLASTIC, 150C CY8C24494 (8C24494A) 2450856 610511591 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 5.5V, Vcc Max CY8C24494 (8C24494A) 2450856 610511591 TAIWAN-T 96 1008 0 Failure Mechanism