DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D259 BLS3135-65 Microwave power transistor Product specification Supersedes data of 1999 May 01 1999 Aug 16 Philips Semiconductors Product specification Microwave power transistor BLS3135-65 FEATURES PINNING - SOT422A • Suitable for short and medium pulse applications PIN • Internal input and output matching networks for an easy circuit design • Emitter ballasting resistors improve ruggedness • Gold metallization ensures excellent reliability DESCRIPTION 1 collector 2 emitter 3 base; connected to flange • Interdigitated emitter-base structure provides high emitter efficiency • Multicell geometry improves power sharing and reduces thermal resistance. 1 handbook, halfpage APPLICATIONS • Common base class-C pulsed power amplifiers for radar applications in the 3.1 to 3.5 GHz band. 3 3 2 MBK051 DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT422A) with the common base connected to the flange. Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common base class-C test circuit. MODE OF OPERATION Pulsed, class-C f (GHz) VCB (V) PL (W) Gp (dB) ηC (%) 3.1 to 3.5 40 65 ≥7 ≥35 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1999 Aug 16 2 Philips Semiconductors Product specification Microwave power transistor BLS3135-65 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 75 V VCES collector-emitter voltage RBE = 0 − 75 V VEBO emitter-base voltage open collector − 2 V ICM peak collector current tp ≤ 100 µs; δ ≤ 10% − 8 A Ptot total power dissipation tp = 100 µs; δ = 10%; Tmb = 25 °C − 200 W Tstg storage temperature −65 +200 °C Tj operating junction temperature − 200 °C Tsld soldering temperature − 235 °C up to 0.2 mm from ceramic cap; t ≤ 10 s THERMAL CHARACTERISTICS SYMBOL Zth j-h PARAMETER CONDITIONS thermal impedance from junction to heatsink VALUE UNIT tp = 100 µs; δ = 10%; note 1 0.57 K/W tp = 300 µs; δ = 10%; note 1 0.74 K/W MAX. UNIT Note 1. Equivalent thermal impedance under pulsed microwave operating conditions. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. V(BR)CBO collector-base breakdown voltage 75 − V V(BR)CES collector-emitter breakdown voltage IC = 20 mA; VBE = 0 75 − V ICBO collector leakage current − 2 mA ICES collector leakage current VCE = 40 V; VBE = 0 − 4 mA IEBO emitter leakage current VEB = 1.5 V; IC = 0 − 0.4 mA hFE DC current gain VCB = 5 V; IC = 2 A 40 − IC = 20 mA; open emitter VCB = 40 V; IE = 0 APPLICATION INFORMATION RF performance at Th = 25 °C in a common-base test circuit. MODE OF OPERATION f (GHz) VCE (V) PL (W) Gp (dB) ηC (%) Class-C; tp = 100 µs; δ = 10% 3.1 to 3.5 40 ≥65 ≥7 ≥35 1999 Aug 16 3 Philips Semiconductors Product specification Microwave power transistor BLS3135-65 MCD750 100 PL MCD751 10 Gp handbook, halfpage handbook, halfpage (1) (2) (W) 80 (dB) 8 (3) 60 6 40 4 20 2 0 (2) (3) 0 6 4 8 10 PD (W) 12 0 20 40 60 VCB = 40 V; class-C; tp = 100 µs; δ = 10%. (1) f = 3.1 GHz. (2) f = 3.3 GHz. (3) f = 3.5 GHz. VCB = 40 V; class-C; tp = 100 µs; δ = 10%. (1) f = 3.1 GHz. (2) f = 3.3 GHz. (3) f = 3.5 GHz. Fig.2 Fig.3 Load power as a function of the drive power; typical values. MCD752 50 ηC handbook, halfpage (%) 40 (1) (3) (2) 30 20 10 0 20 0 40 60 80 100 PL (W) VCB = 40 V; class-C; tp = 100 µs; δ = 10%. (1) f = 3.1 GHz. (2) f = 3.3 GHz. (3) f = 3.5 GHz. Fig.4 (1) Collector efficiency as a function of load power; typical values. 1999 Aug 16 4 80 100 PL (W) Power gain as a function of load power; typical values. Philips Semiconductors Product specification Microwave power transistor BLS3135-65 MCD753 10 Gp MCD754 30 handbook, halfpage handbook, halfpage Return Losses (dB) (dB) 8 20 6 4 10 2 0 3.1 3.2 3.3 3.4 f (GHz) 0 3.1 3.5 3.2 3.3 VCB = 40 V; class-C; tp = 100 µs; δ = 10%. VCB = 40 V; class-C; tp = 100 µs; δ = 10%. Fig.5 Fig.6 Power gain as a function of frequency; typical values. MCD755 25 Zi 3.4 f (GHz) 3.5 Return losses input as a function of frequency; typical values. MCD756 8 handbook, halfpage handbook, halfpage ZL (Ω) (Ω) 20 RL 4 xi 15 0 ri 10 −4 XL 5 0 3.1 3.2 3.3 −8 3.1 3.5 3.4 3.2 f (GHz) VCB = 40 V; class-C; PL = 65 W. VCB = 40 V; class-C; PL = 65 W. Fig.7 Fig.8 Input impedance as a function of frequency (series components); typical values. 1999 Aug 16 5 3.3 3.4 f (MHz) 3.5 Load impedance as a function of frequency (series components); typical values. Philips Semiconductors Product specification Microwave power transistor BLS3135-65 30 handbook, full pagewidth 30 40 input output MCD757 Dimensions in mm. The components are located on one side of the copper-clad printed circuit board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization. The striplines are on double-clad printed-circuit board with Duroid dielectric (εr = 2.2); thickness = 0.38 mm. Fig.9 1999 Aug 16 Component layout for 3.1 to 3.5 GHz class-C test circuit. 6 Philips Semiconductors Product specification Microwave power transistor BLS3135-65 PACKAGE OUTLINE Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT422A D A F 3 D1 U1 B q C c 1 L H p U2 E1 E w1 M A M B M A L 2 Q w2 M C M b 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 E E1 F H L p Q q U1 U2 w1 w2 mm 5.72 4.83 5.21 4.95 0.13 0.08 9.93 9.68 10.29 10.03 8.76 8.51 10.29 10.03 1.58 1.47 19.18 17.65 4.52 3.74 3.43 3.18 3.35 2.92 16.51 22.99 22.73 9.91 9.65 0.25 0.76 inches 0.225 0.190 0.205 0.195 0.005 0.003 0.391 0.381 0.405 0.395 0.345 0.335 0.405 0.395 0.062 0.058 0.755 0.695 0.178 0.147 0.135 0.125 0.132 0.115 0.65 0.905 0.895 0.390 0.380 0.01 0.03 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ SOT422A 1999 Aug 16 EUROPEAN PROJECTION ISSUE DATE 99-03-29 7 Philips Semiconductors Product specification Microwave power transistor BLS3135-65 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Aug 16 8 Philips Semiconductors Product specification Microwave power transistor BLS3135-65 NOTES 1999 Aug 16 9 Philips Semiconductors Product specification Microwave power transistor BLS3135-65 NOTES 1999 Aug 16 10 Philips Semiconductors Product specification Microwave power transistor BLS3135-65 NOTES 1999 Aug 16 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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