DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BFU540 NPN SiGe wideband transistor Product specification Supersedes data of 2002 Jan 28 2003 Jun 12 Philips Semiconductors Product specification NPN SiGe wideband transistor BFU540 FEATURES PINNING • Very high power gain PIN • Very low noise figure 1 emitter • High transition frequency 2 base • Emitter is thermal lead 3 emitter • Low feedback capacitance 4 collector DESCRIPTION • 45 GHz SiGe process. APPLICATIONS • RF front end handbook, halfpage • Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.) 3 4 • Radar detectors • Pagers 2 • Satellite television tuners (SATV) Top view 1 MSB842 • High frequency oscillators. Marking code: A4. DESCRIPTION Fig.1 Simplified outline SOT343R. NPN SiGe wideband transistor for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT − − 9 V − − 2.3 V VCBO collector-base voltage VCEO collector-emitter voltage open base IC collector current (DC) − 40 50 mA Ptot total power dissipation Ts ≤ 98 °C − − 115 mW hFE DC current gain IC = 40 mA; VCE = 2 V; Tj = 25 °C 70 140 210 Gmax maximum power gain IC = 40 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C − 20 − dB NF noise figure IC = 2 mA; VCE = 2 V; f = 2 GHz; ΓS = Γopt 0.9 − dB open emitter − CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 2003 Jun 12 2 Philips Semiconductors Product specification NPN SiGe wideband transistor BFU540 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 9 V VCEO collector-emitter voltage open base − 2.3 V VEBO emitter-base voltage open collector − 2.5 V IC collector current (DC) − 50 mA Ptot total power dissipation − 115 mW Tstg storage temperature −65 +150 °C Tj operating junction temperature − 150 °C Ts ≤ 98 °C; note 1; see Fig.2 Note 1. Ts is the temperature at the soldering point of the emitter pins. THERMAL CHARACTERISTICS SYMBOL PARAMETER thermal resistance from junction to soldering point Rth j-s MLE151 150 handbook, halfpage Ptot (mW) 100 50 0 0 40 80 120 Ts (°C) 160 Fig.2 Power derating curve. 2003 Jun 12 3 VALUE UNIT 450 K/W Philips Semiconductors Product specification NPN SiGe wideband transistor BFU540 CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage IC = 2.5 µA; IE = 0 9 − − V V(BR)CEO collector-emitter breakdown voltage IC = 1 mA; IB = 0 2.3 − − V V(BR)EBO emitter-base breakdown voltage IE = 2.5 µA; IC = 0 2.5 − − V ICBO collector-base leakage current IE = 0; VCB = 4.5 V − − 15 nA hFE DC current gain IC = 40 mA; VCE = 2 V 70 140 210 Cc collector capacitance IE = ie = 0; VCB = 2 V; f = 1 MHz − 520 − fF Cre feedback capacitance IC = 0; VCB = 2 V; f = 1 MHz − 105 − fF Gmax maximum power gain; note 1 IC = 40 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C − 20 − dB NF noise figure IC = 2 mA; VCE = 2 V; f = 2 GHz; ΓS = Γopt − 0.9 − dB PL1 output power at 1 dB gain compression IC = 20 mA; VCE = 2 V; f = 2 GHz; ZS = ZS opt; ZL = ZL opt; note 2 − 11 − dBm ITO third order intercept point IC = 40 mA; VCE = 2 V; f = 2 GHz; ZS = ZS opt; ZL = ZL opt; note 2 − 21 − dBm Notes 1. Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax = MSG. 2. ZS and ZL are optimized for gain. 2003 Jun 12 4 Philips Semiconductors Product specification NPN SiGe wideband transistor BFU540 MLE152 250 MLE153 50 handbook, halfpage handbook, halfpage IC (mA) 40 hFE 200 (1) (2) (3) (4) 30 150 (5) (6) 100 20 50 10 (7) (8) 0 0 10 0 20 30 40 0 50 IC (mA) (1) (2) (3) (4) VCE = 2 V; Tj = 25 °C. Fig.3 DC current gain as a function of collector current; typical values. IB = 400 µA. IB = 350 µA. IB = 300 µA. IB = 250 µA. (5) (6) (7) (8) 2 VCE (V) 3 IB = 200 µA. IB = 150 µA. IB = 100 µA. IB = 50 µA. Fig.4 Output characteristics; typical values. MLE154 50 1 MLE155 40 handbook, halfpage handbook, halfpage fT (GHz) gain (dB) 40 30 MSG 30 20 s21 20 Gmax 10 10 0 1 10 IC (mA) 0 102 102 103 VCB = 1 V; f = 2 GHz; Tamb = 25 °C. IC = 40 mA; VCE = 2 V; Tamb = 25 °C. Fig.5 Fig.6 Transition frequency as a function of collector current; typical values. 2003 Jun 12 5 f (MHz) 104 Gain as a function of frequency; typical values. Philips Semiconductors Product specification NPN SiGe wideband transistor BFU540 MLE156 200 Cre MLE157 25 handbook, halfpage handbook, halfpage (fF) ITO (dBm) 160 20 120 15 80 10 40 5 0 0 0 0.5 1 1.5 VCB (V) 1 2 10 IC = 0; f = 1 MHz; Tamb = 25 °C. VCE = 2 V; f = 2 GHz. Fig.7 Fig.8 Feedback capacitance as a function of collector-base voltage; typical values. MLE158 12 handbook, halfpage PL 1dB (dBm) 8 4 0 −4 10 1 IC (mA) 102 VCE = 2 V; f = 2 GHz; source and load tuned for optimum gain. Fig.9 Output power at 1 dB gain compression as a function of collector current. 2003 Jun 12 6 IC (mA) 102 Third order intercept point as a function of collector current. Philips Semiconductors Product specification NPN SiGe wideband transistor BFU540 90° handbook, full pagewidth 1.0 +1 10 GHz 135° 0.8 45° +2 +0.5 0.6 5 GHz 5 GHz +0.2 0.4 +5 0.2 2.5 GHz 0.2 0 180° 0.5 2 5 0° 1 GHz −0.2 40 mA 0 4 mA −5 2.5 GHz 1 GHz −0.5 −2 −135° −45° −1 MLE159 1.0 −90° IC = 4 mA and 40 mA; VCE = 2 V; Zo = 50 Ω. Fig.10 Common emitter input reflection coefficient (s11). 90° handbook, full pagewidth 135° 45° 40 mA 1 GHz 1 GHz 25 20 15 10 4 mA 5 180° 0° 10 GHz −135° −45° −90° MLE160 IC = 4 mA and 40 mA; VCE = 2 V; Zo = 50 Ω. Fig.11 Common emitter forward transmission coefficient (s21). 2003 Jun 12 7 Philips Semiconductors Product specification NPN SiGe wideband transistor BFU540 90° handbook, full pagewidth 135° 45° 1 GHz 0.25 180° 0.2 0.15 0.1 0.05 0° 40 mA 4 mA 10 GHz −135° −45° −90° MLE161 IC = 4 mA and 40 mA; VCE = 2 V; Zo = 50 Ω. Fig.12 Common emitter reverse transmission coefficient (s12). 90° handbook, full pagewidth 1.0 +1 135° 0.8 45° +2 +0.5 0.6 10 GHz +0.2 180° 0.2 5 GHz 0.5 0.2 0 0.4 +5 2 5 0° 0 40 MHz −0.2 1 GHz 40 mA 4 mA 1 GHz −5 2.5 GHz −0.5 −2 −135° −45° −1 MLE162 −90° IC = 4 mA and 40 mA; VCE = 2 V; Zo = 50 Ω. Fig.13 Common emitter output reflection coefficient (s22). 2003 Jun 12 8 1.0 Philips Semiconductors Product specification NPN SiGe wideband transistor BFU540 MLE163 4 MLE164 3 handbook, halfpage handbook, halfpage NFmin NFmin (dB) (dB) 3 2 2 f = 5 GHz 1 f = 2 GHz 1 0 0 0 4 8 12 16 20 IC (mA) 0 2 4 f (GHz) 6 VCE = 2 V; Tamb = 25 °C. IC = 2 mA; VCE = 2 V; Tamb = 25 °C. Fig.14 Minimum noise figure as a function of collector current. Fig.15 Minimum noise figure as a function of frequency. Noise data: VCE = 2 V; IC = 4 mA; Tamb = 25 °C; typical values Γopt f (GHz) Fmin (dB) (mag) (deg) rn (Ω) 2 1.0 0.39 55.9 0.20 3 1.2 0.23 86.8 0.15 4 1.4 0.11 142.5 0.13 5 1.6 0.14 −121.0 0.16 6 1.7 0.28 −74.2 0.27 7 1.9 0.41 −52.1 0.43 8 2.1 0.47 −32.6 0.66 9 2.3 0.54 −14.1 0.91 10 2.6 0.62 3.7 1.22 11 2.8 0.63 22.7 1.44 12 3.0 0.61 36.8 1.65 2003 Jun 12 9 Philips Semiconductors Product specification NPN SiGe wideband transistor BFU540 SPICE parameters for the BFU540 die SEQUENCE No. PARAMETER VALUE UNIT 1 2 3 IS BF NF 1.5 271.5 1.061 aA − − 4 5 6 VAF IKF ISE 25 68 1060 V mA fA 7 8 9 10 NE BR NR VAR 2.9 50 1.01 1 − − − MV 11 12 13 14 15 (1) 16 17 18 19 20 21 22 23 24 25 26 27 28 IKR ISC NC RB IRB RBM RE RC XTB EG XTI CJE VJE MJE TF XTF VTF ITF 6.4 1.2 1.21 8.75 − 5 0.9 9.25 −2.2 1.014 3 222 918 0.27 2.1 10 1.5 0.92 mA fA − Ω − Ω mΩ Ω − eV − fF mV − ps − V A 29 30 31 PTF CJC VJC 30 147 587 deg fF mV 32 33 34 MJC XCJC TR 0.246 0.44 20 − − ps 35 36 CJS VJS 51 441 fF mV 37 MJS 0.313 − 38 FC 0.7 − handbook, halfpage B Cbe B' Lc C' E' C Ccs Cbe2 Cce Le Rcs MLE150 E Fig.16 Package equivalent circuit SOT343R2. List of components (see Fig.16) DESIGNATION Note 1. Not used. 2003 Jun 12 Lb 10 VALUE UNIT Lb 1.18 nH Lc 1.04 nH Le 0.32 nH Cbe1 146 fF Cbe2 55 fF Cce 56 fF Ccs 100 fF Rcs 170 Ω Philips Semiconductors Product specification NPN SiGe wideband transistor BFU540 PACKAGE OUTLINE Plastic surface mounted package; reverse pinning; 4 leads D SOT343R E B A X HE y v M A e 3 4 Q A A1 c 2 w M B 1 bp Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.4 0.3 0.7 0.5 0.25 0.10 2.2 1.8 1.35 1.15 1.3 1.15 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-05-21 SOT343R 2003 Jun 12 EUROPEAN PROJECTION 11 Philips Semiconductors Product specification NPN SiGe wideband transistor BFU540 DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Jun 12 12 Philips Semiconductors Product specification NPN SiGe wideband transistor BFU540 NOTES 2003 Jun 12 13 Philips Semiconductors Product specification NPN SiGe wideband transistor BFU540 NOTES 2003 Jun 12 14 Philips Semiconductors Product specification NPN SiGe wideband transistor BFU540 NOTES 2003 Jun 12 15 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA75 © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613516/04/pp16 Date of release: 2003 Jun 12 Document order number: 9397 750 11468