PHILIPS BUK555-60H

Philips Semiconductors
Product specification
PowerMOS transistor
Logic level FET
GENERAL DESCRIPTION
N-channel enhancement mode logic
level field-effect power transistor in
a plastic envelope.
The device is intended for use in
Automotive applications, Switched
Mode Power Supplies (SMPS),
motor control, welding, DC/DC and
AC/DC converters, and in general
purpose switching applications.
PINNING - TO220AB
PIN
BUK555-60H
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance;
VGS = 5 V
PIN CONFIGURATION
MAX.
UNIT
60
41
125
175
38
V
A
W
˚C
mΩ
SYMBOL
DESCRIPTION
d
tab
1
gate
2
drain
3
source
g
tab
drain
s
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
VDS
VDGR
±VGS
±VGSM
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Non-repetitive gate-source
voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction Temperature
ID
ID
IDM
Ptot
Tstg
Tj
MIN.
MAX.
UNIT
RGS = 20 kΩ
tp ≤ 50 µs
-
60
60
15
20
V
V
V
V
Tmb = 25 ˚C
Tmb = 100 ˚C
Tmb = 25 ˚C
Tmb = 25 ˚C
-
- 55
-
41
29
164
125
175
175
A
A
A
W
˚C
˚C
CONDITIONS
TYP.
MAX.
UNIT
-
1.2
K/W
60
-
K/W
THERMAL RESISTANCES
SYMBOL
PARAMETER
Rth j-mb
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
Rth j-a
August 1994
1
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level FET
BUK555-60H
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance
VGS(TO)
IDSS
IDSS
IGSS
RDS(ON)
MIN.
TYP.
MAX.
UNIT
VGS = 0 V; ID = 0.25 mA
60
-
-
V
VDS = VGS; ID = 1 mA
VDS = 60 V; VGS = 0 V; Tj = 25 ˚C
VDS = 60 V; VGS = 0 V; Tj =125 ˚C
VGS = ±15 V; VDS = 0 V
VGS = 5 V; ID = 20 A
1.0
-
1.5
1
0.1
10
25
2.0
10
1.0
100
38
V
µA
mA
nA
mΩ
MIN.
TYP.
MAX.
UNIT
11
20
-
S
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
gfs
Forward transconductance
VDS = 25 V; ID = 20 A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Feedback capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz
-
1200
470
180
1750
600
275
pF
pF
pF
td on
tr
td off
tf
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
VDD = 30 V; ID = 3 A;
VGS = 5 V; RGS = 50 Ω;
Rgen = 50 Ω
-
25
120
160
110
40
150
220
145
ns
ns
ns
ns
Ld
Internal drain inductance
-
3.5
-
nH
Ld
Internal drain inductance
-
4.5
-
nH
Ls
Internal source inductance
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
-
7.5
-
nH
MIN.
TYP.
MAX.
UNIT
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
IDR
-
-
-
41
A
IDRM
VSD
Continuous reverse drain
current
Pulsed reverse drain current
Diode forward voltage
IF = 41 A ; VGS = 0 V
-
0.95
164
2.0
A
V
trr
Qrr
Reverse recovery time
Reverse recovery charge
IF = 41 A; -dIF/dt = 100 A/µs;
VGS = 0 V; VR = 30 V
-
60
0.30
-
ns
µC
MIN.
TYP.
MAX.
UNIT
-
-
90
mJ
AVALANCHE LIMITING VALUE
Tmb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
WDSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
ID = 41 A ; VDD ≤ 25 V ;
VGS = 5 V ; RGS = 50 Ω
August 1994
2
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level FET
120
BUK555-60H
Normalised Power Derating
PD%
10
Zth j-mb / (K/W)
BUKx55-lv
110
100
90
1
D=
0.5
80
0.1
0.2
0.1
0.05
0.02
0.01
0
70
60
50
40
30
tp
PD
D=
20
10
0
0
20
40
60
80 100
Tmb / C
120
140
160
180
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/PD 25 ˚C = f(Tmb)
120
1E-05
1E-03
t/s
1E-01
1E+01
Fig.4. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
Normalised Current Derating
ID%
t
T
0.001
1E-07
tp
T
ID / A
100
BUK5Y5-60H
10
15
110
100
6
5
80
90
4.5
80
60
70
4
60
50
40
3.5
40
30
3
20
20
10
VGS / V = 2.5
0
0
20
40
60
80 100
Tmb / C
120
140
160
0
180
ID / A
=
6
8
10
0.2
RDS(ON) / Ohm
2.5
3
BUK5Y5-60H
3.5
4
4.5
ID
S/
N)
4
Fig.5. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VGS
BUK555-60H
100
2
VDS / V
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 5 V
1000
0
0.15
tp =
VD
VGS / V = 5
10 us
O
S(
RD
0.1
100 us
10
10
1 ms
DC
0.05
10 ms
100 ms
6
15
0
1
1
10
VDS / V
100
20
40
60
80
100
ID / A
Fig.3. Safe operating area. Tmb = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter tp
August 1994
0
Fig.6. Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID); parameter VGS
3
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level FET
100
BUK555-60H
ID / A
VGS(TO) / V
BUK5Y5-60H
max.
2
80
typ.
60
20
Tj / C =
-40
25
150
0
0
1
2
3
4
VGS / V
5
6
7
0
8
-60
Fig.7. Typical transfer characteristics.
ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj
gfs / S
40
min.
1
40
-20
20
60
Tj / C
100
140
180
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
BUK5Y5-60H
1E-01
SUB-THRESHOLD CONDUCTION
ID / A
1E-02
30
2%
1E-03
98 %
typ
20
1E-04
10
1E-05
Tj / C =
-40
25
150
0
0
20
40
60
80
1E-06
100
0
0.4
0.8
ID / A
Fig.8. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID); conditions: VDS = 10 V
2.0
a
1.2
VGS / V
1.6
2
2.4
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
Normalised RDS(ON) = f(Tj)
10000
BUK5Y5-60H
C / pF
Ciss
Coss
Crss
1.5
1.0
1000
0.5
0
-60
-20
20
60
Tj / C
100
140
100
0.1
180
10
100
VDS / V
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 20 A; VGS = 5 V
August 1994
1
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
4
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level FET
BUK555-60H
BUK5Y5-60H
VGS / V
15
120
WDSS%
110
100
90
VDD / V = 12
80
10
48
70
60
50
40
5
30
20
10
0
0
10
20
30
40
50
60
70
0
80
20
40
QG / nC
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); conditions: ID = 41 A; parameter VDS
IS / A
100
60
80
100
120
Tmb / C
160
180
Fig.15. Normalised avalanche energy rating.
WDSS% = f(Tmb); conditions: ID = 41 A
BUKXY5-60H
Tj / C =
VDD
+
-40
25
150
80
140
L
VDS
-
60
VGS
-ID/100
40
T.U.T.
0
20
0
RGS
0
0.5
1
R 01
shunt
1.5
VSDS / V
Fig.16. Avalanche energy test circuit.
WDSS = 0.5 ⋅ LID2 ⋅ BVDSS /(BVDSS − VDD )
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
August 1994
5
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level FET
BUK555-60H
MECHANICAL DATA
Dimensions in mm
4,5
max
Net Mass: 2 g
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max 1 2 3
(2x)
0,9 max (3x)
2,54 2,54
0,6
2,4
Fig.17. TO220AB; pin 2 connected to mounting base.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for TO220 envelopes.
3. Epoxy meets UL94 V0 at 1/8".
August 1994
6
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level FET
BUK555-60H
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
August 1994
7
Rev 1.000