DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D329 KMZ10A1 Magnetic field sensor Product specification Supersedes data of 1996 Nov 14 File under Discrete Semiconductors, SC17 1998 Apr 06 Philips Semiconductors Product specification Magnetic field sensor KMZ10A1 DESCRIPTION The KMZ10A1 is an extremely sensitive magnetic field sensor, employing the magnetoresistive effect of thin-film permalloy. Its properties enable this sensor to be used in a wide range of applications such as navigation, current and earth magnetic field measurement etc. The special arrangement of the sensing chip allows the construction of coils for switching the auxiliary field (Hx) along the length axis of the sensor. The sensor can be operated at any frequency between DC and 1 MHz. H y handbook, halfpage Hx 1 2 3 4 PINNING MGL420 PIN SYMBOL DESCRIPTION 1 +VO output voltage 2 GND ground 3 −VO output voltage 4 VCC supply voltage Fig.1 Simplified outline. QUICK REFERENCE DATA SYMBOL PARAMETER MIN. TYP. MAX. UNIT VCC DC supply voltage − 5 − V Hy magnetic field strength −0.5 − +0.5 kA/m Hx auxiliary field − 0.5 − kA/m S sensitivity − 14 − mV ⁄ V ----------------kA ⁄ m Ss sensitivity (with switched Hx) − 22 − mV ⁄ V ----------------kA ⁄ m Rbridge bridge resistance 0.85 − 1.75 kΩ Voffset offset voltage −1.5 − +1.5 mV/V CIRCUIT DIAGRAM MLC716 handbook, full pagewidth 1 2 3 +VO GND –VO 4 V CC Fig.2 Simplified circuit diagram. 1998 Apr 06 2 Philips Semiconductors Product specification Magnetic field sensor KMZ10A1 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS UNIT 9 V − 100 mW storage temperature −65 +150 °C bridge operating temperature −40 +150 °C DC supply voltage Ptot total power dissipation Tstg Tbridge up to Tamb = 132 °C MSA927 150 handbook, halfpage P tot (mW) 100 50 0 50 100 Tamb (o C) 150 Fig.3 Power derating curve. 1998 Apr 06 MAX. − VCC 0 MIN. 3 Philips Semiconductors Product specification Magnetic field sensor KMZ10A1 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER VALUE UNIT 180 K/W thermal resistance from junction to ambient CHARACTERISTICS Tamb = 25 °C and Hx = 0.5 kA/m unless otherwise specified; see notes 1 and 2. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT − 5 − V note 2 −0.5 − +0.5 kA/m sensitivity open circuit; notes 2 and 3 11 − 17 mV ⁄ V ----------------kA ⁄ m TCVO temperature coefficient of output voltage at constant supply voltage VCC = 5 V; Tamb = −25 to +125 °C − −0.4 − %/K VCVO temperature coefficient of output voltage at constant supply current IB = 3 mA; Tamb = −25 to +125 °C − −0.15 − %/K Rbridge bridge resistance 0.85 − 1.75 kΩ − 0.25 − %/K −1.5 − +1.5 mV/V VCC DC supply voltage Hy operating range S TCRbridge temperature coefficient of bridge resistance Tj = −25 to +125 °C Voffset offset voltage TCVoffset offset voltage drift Tbridge = −25 to +125 °C −6 − +6 µV ⁄ V --------------K FL linearity deviation of output voltage Hy = 0 to ±0.25 kA/m−1 − − 0.8 %⋅FS kA/m−1 − − 2.5 %⋅FS Hy = 0 to ±0.5 kA/m−1 − − 4.0 %⋅FS Hy = 0 to ±0.4 FH hysteresis of output voltage − − 0.5 %⋅FS f operating frequency 0 − 1 MHz Characteristics with Hx = 0 (switched Hx, see note 4); VCC = 5 V Hy operating range note 2 −0.05 − +0.05 kA/m Ss sensitivity slope between Hy = 0 and Hy = 40 A/m 14 − 27 mV ⁄ V ----------------kA ⁄ m Notes 1. Before first operation or after operation outside the SOAR (Fig.4) the sensor has to be reset by application of an auxiliary field Hx = 3 kA/m. 2. No disturbing field (Hd) allowed; for stable operation under disturbing conditions see Fig.4 (SOAR) and see Fig.5 for decrease of sensitivity. 3. Sensitivity measured as ∆VO/∆Hy between Hy = 0 and Hy = 0.4 kA/m. 4. See application information. 1998 Apr 06 4 Philips Semiconductors Product specification Magnetic field sensor ,,,,, ,,,,, ,,,,, ,,,,, ,,,,, ,,,,, ,,,,, KMZ10A1 MGD807 12 Hd (kA/m) handbook, halfpage S(H ) x Hy Hx 8 MLC120 1.2 handbook, halfpage II S(0.5 kA/m) Hd 0.8 SOAR 4 0.4 I II 0 0 1 2 3 0 4 0 Hx (kA/m) 1 2 3 4 5 H x (kA/m) I = Region of permissible operation. II = Permissible extension if Hy < 0.05 kA/m. In applications with Hx < 3 kA/m, the sensor has to be reset, after leaving the SOAR, by an auxiliary field of Hx = 3 kA/m. In applications with Hx ≤ 3 kA/m, the sensor has to be reset by an auxiliary field of Hx = 3 kA/m before use. Fig.4 Fig.5 Safe Operating Area (permissible disturbing field Hd as a component of auxiliary field Hx). MEA558 10 Relative sensitivity (ratio of sensitivity at certain Hx and sensitivity at Hx = 0.5 kA/m). MEA557 1.2 O (mV/V) 0.8 handbook, halfpage handbook, V halfpage VO (mV/V) 6 (1) 0.4 ∆ VO 2 0 0 ∆ Hy –2 (2) –0.4 –6 –0.8 –10 –0.5 –0.3 –0.1 0 0.1 –1.2 –50 0.3 0.5 Hy (kA/m) –30 –10 0 10 50 30 Hy (A/m) (1) Sensor reset with Hx = 3 kA/m. (2) Sensor reset with Hx = −3 kA/m. Hx = 0.5 kA/m; Tamb = 25 °C; Voffset = 0; S = ∆VO / ∆Hy. Fig.7 Fig.6 Sensor output characteristics. 1998 Apr 06 5 Output characteristic with Hx = 0 (switched Hx). Philips Semiconductors Product specification Magnetic field sensor KMZ10A1 APPLICATION INFORMATION A problem with measuring weak magnetic fields is that precision is limited by drift in both the sensor and amplifier offset. In these instances, it is possible to take advantage of the ‘flipping’ characteristics of the KMZ10 series to generate an output that is independent of offset. The sensor, located in a coil connected to a current pulse generator producing magnetic field pulses periodically reversed by alternate positive and negative going current pulses, is continually flipped from its normal to its reversed polarity and back again. The polarity of the offset however, remains unchanged, so the offset itself can be eliminated by passing the output signal through a filter circuit. , , , , Hx handbook, full pagewidth coil Vo Mx Hy offset sensor 1 Hy Mx 2 3 4 (a) (c) current polarization Vo offset time MBC925 (b) (a) Set-up. (b) Pulse diagram. (c) Sensor output characteristics. Fig.8 Measuring weak magnetic fields with the KMZ10A1. 1998 Apr 06 6 Philips Semiconductors Product specification Magnetic field sensor KMZ10A1 PACKAGE OUTLINE Plastic single-ended flat package; 4 in-line leads SOT195 E Q b1 A chip D L1 L 1 2 3 4 e1 bp c e 0 1 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp b1 c D E e e1 L L1(1) max. Q mm 1.8 1.6 0.48 0.40 0.7 0.5 0.45 0.39 5.2 5.0 4.8 4.4 3.75 1.25 14.5 12.7 2 0.8 0.7 Notes 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ SOT195 1998 Apr 06 EUROPEAN PROJECTION ISSUE DATE 97-06-02 7 Philips Semiconductors Product specification Magnetic field sensor KMZ10A1 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Apr 06 8 Philips Semiconductors Product specification Magnetic field sensor KMZ10A1 NOTES 1998 Apr 06 9 Philips Semiconductors Product specification Magnetic field sensor KMZ10A1 NOTES 1998 Apr 06 10 Philips Semiconductors Product specification Magnetic field sensor KMZ10A1 NOTES 1998 Apr 06 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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