PHILIPS ACT108W-600E

ACT108W-600E
AC Thyristor power switch
Rev. 04 — 9 December 2009
Product data sheet
1. Product profile
1.1 General description
AC Thyristor power switch in a SOT223 surface-mountable plastic package with
self-protective capabilities against low and high energy transients
1.2 Features and benefits
„ Common terminal on mounting base
allows multiple ACTs on shared
cooling pad
„ Safe clamping of low energy
over-voltage transients
„ Exclusive negative gate triggering
„ Self-protective turn-on during high
energy voltage transients
„ Full cycle AC conduction
„ Surface-mountable package
„ Remote gate separates the gate driver
from the effects of the load current
„ Very high noise immunity
1.3 Applications
„ Contactors, circuit breakers, valves,
dispensers and door locks
„ Lower-power highly inductive, resistive
and safety loads
„ Fan motor circuits
„ Pump motor circuits
1.4 Quick reference data
Table 1.
Quick reference
Symbol Parameter
VDRM
repetitive peak
off-state voltage
IGT
gate trigger current
Conditions
Min
Typ
Max
Unit
-
-
600
V
VD = 12 V; IT = 100 mA;
LD+ G-; Tj = 25 °C;
see Figure 10
1
-
10
mA
VD = 12 V; IT = 100 mA;
LD- G-; Tj = 25 °C
1
-
10
mA
IT(RMS)
RMS on-state
current
full sine wave; Tsp ≤ 112 °C;
see Figure 3, 1 and 2
-
-
0.8
A
dVD/dt
rate of rise of
off-state voltage
VDM = 402 V; Tj = 125 °C;
gate open circuit;
see Figure 14
1000
-
-
V/µs
ACT108W-600E
NXP Semiconductors
AC Thyristor power switch
Table 1.
Quick reference …continued
Symbol Parameter
Conditions
Min
Typ
Max
Unit
VCL
clamping voltage
ICL = 100 mA; tp = 1 ms;
Tj ≤ 125 °C;
see Figure 17
650
-
-
V
VPP
peak pulse voltage
Tj = 25 °C; non-repetitive,
off-state;
see Figure 6
-
-
2
kV
VT
on-state voltage
IT = 1.1 A;see Figure 13
-
-
1.3
V
2. Pinning information
Table 2.
Pinning information
Pin
Symbol
Description
1
LD
load
2
CM
common
3
G
gate
4
CM
common
Simplified outline
Graphic symbol
LD
4
G
1
2
3
CM
001aaj924
SOT223 (SC-73)
3. Ordering information
Table 3.
Ordering information
Type number
ACT108W-600E
Package
Name
Description
Version
SC-73
plastic surface-mounted package with increased heatsink; 4 leads
SOT223
ACT108W-600E_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 9 December 2009
2 of 13
ACT108W-600E
NXP Semiconductors
AC Thyristor power switch
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VDRM
repetitive peak off-state
voltage
IT(RMS)
RMS on-state current
ITSM
Conditions
Min
Max
Unit
-
600
V
full sine wave; Tsp ≤ 112 °C;
see Figure 3, 1 and 2
-
0.8
A
non-repetitive peak
on-state current
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms
-
8.8
A
full sine wave; Tj(init) = 25 °C; tp = 20 ms;
see Figure 4 and 5
-
8
A
I2t
I2t for fusing
tp = 10 ms; sine-wave pulse
-
0.32
A2s
dIT/dt
rate of rise of on-state
current
IT = 1 A; IG = 20 mA; dIG/dt = 0.2 A/µs
-
100
A/µs
IGM
peak gate current
t = 20 μs
-
1
A
VGM
peak gate voltage
positive applied gate voltage
-
15
V
PG(AV)
average gate power
over any 20 ms period
-
0.1
W
Tstg
storage temperature
-40
150
°C
Tj
junction temperature
-
125
°C
VPP
peak pulse voltage
-
2
kV
Tj = 25 °C; non-repetitive, off-state;
see Figure 6
003aac822
8
IT(RMS)
(A)
003aac807
1
IT(RMS)
(A)
0.8
6
0.6
4
0.4
2
0.2
0
10−2
Fig 1.
10−1
0
−50
1
10
surge duration (s)
RMS on-state current as a function of surge
duration; maximum values
Fig 2.
50
100
T sp (°C)
150
RMS on-state current as a function of solder
point temperature; maximum values
ACT108W-600E_4
Product data sheet
0
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 9 December 2009
3 of 13
ACT108W-600E
NXP Semiconductors
AC Thyristor power switch
003aac803
1.0
Ptot
(W)
= 180°
0.8
0.6
0.4
0.2
0
0
Fig 3.
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
IT(RMS) (A)
Total power dissipation as a function of RMS on-state current; maximum values
003aac804
10
ITSM
(A)
8
6
4
ITSM
IT
t
2
1/f
Tj(init) = 25 °C max
0
1
Fig 4.
102
10
number of cycles
103
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
ACT108W-600E_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 9 December 2009
4 of 13
ACT108W-600E
NXP Semiconductors
AC Thyristor power switch
003aac805
103
ITSM
IT
ITSM
(A)
t
tp
102
Tj(init) = 25 °C max
10
1
10−5
Fig 5.
10−4
10−3
10−2
tp (s)
Non-repetitive peak on-state current as a function of pulse width; maximum values
IEC 61000-4-5 Standards
Surge Generator
Open Circuit Voltage
1.2 μs/50 μs waveform
RGen
2
R
150
Surge pulse
L
5 μH
Load Model
RG
DUT
220
003aad077
Fig 6.
Test circuit for inductive and resistive loads with conditions equivalent to IEC 61000-4-5
ACT108W-600E_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 9 December 2009
5 of 13
ACT108W-600E
NXP Semiconductors
AC Thyristor power switch
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Rth(j-sp)
Rth(j-a)
Conditions
Min
Typ
Max
Unit
thermal resistance from full cycle with heatsink compound;
junction to solder point see Figure 9
-
-
15
K/W
thermal resistance from full cycle; printed-circuit board mounted for
junction to ambient
pad area; see Figure 7
-
70
-
K/W
full cycle; printed-circuit board mounted for
minimum footprint; see Figure 8
-
156
-
K/W
36
3.8 min
18
60
9
1.5
min
4.5
4.6
6.3
10
1.5
min
(3×)
2.3
1.5
min
7
4.6
15
001aab508
50
001aab509
Fig 7.
Printed-circuit board pad area SOT223
Fig 8.
Minimum footprint SOT223
ACT108W-600E_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 9 December 2009
6 of 13
ACT108W-600E
NXP Semiconductors
AC Thyristor power switch
003aac808
102
Zth(j-sp)
(K/W)
10
1
P
10−1
t
tp
10−2
10−5
10−4
10−3
10−2
10−1
1
10
tp (s)
Fig 9.
Transient thermal impedance from junction to solder point as a function of pulse width
6. Characteristics
Table 6.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IGT
gate trigger current
VD = 12 V; IT = 100 mA; LD+ G-;
Tj = 25 °C; see Figure 10
1
-
10
mA
VD = 12 V; IT = 100 mA; LD- G-; Tj = 25 °C
1
-
10
mA
IL
latching current
VD = 12 V; IG = 12 mA; Tj = 25 °C;
see Figure 11
-
-
30
mA
IH
holding current
VD = 12 V; Tj = 25 °C; see Figure 12
-
9
25
mA
VT
on-state voltage
IT = 1.1 A; see Figure 13
-
-
1.3
V
VGT
gate trigger voltage
VD = 600 V; IT = 100 mA; Tj ≤ 125 °C
0.15
-
-
V
VD = 600 V; IT = 100 mA; Tj = 25 °C
-
-
1
V
ID
off-state current
VD = 600 V; Tj ≤ 125 °C
-
-
0.2
mA
VD = 600 V; Tj ≤ 25 °C
-
-
2
µA
dVD/dt
rate of rise of off-state
voltage
VDM = 402 V; Tj = 125 °C; gate open
circuit; see Figure 14
1000
-
-
V/µs
dIcom/dt
rate of change of
commutating current
VD = 400 V; Tj = 125 °C; IT(RMS) = 1 A;
dVcom/dt = 15 V/µs; gate open circuit;
see Figure 15 and 16
0.3
-
-
A/ms
VCL
clamping voltage
ICL = 100 mA; tp = 1 ms; Tj ≤ 125 °C;
see Figure 17
650
-
-
V
ACT108W-600E_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 9 December 2009
7 of 13
ACT108W-600E
NXP Semiconductors
AC Thyristor power switch
003aac809
3
IGT
IL
IL(25°C)
(1)
IGT(25°C)
2
003aac811
3
2
(2)
1
1
(2)
0
−50
(1)
0
50
100
Tj (°C)
Fig 10. Normalized gate trigger current as a function of
junction temperature
003aac810
3
0
−50
150
0
50
100
150
Tj (°C)
Fig 11. Normalized latching current as a function of
junction temperature
003aac812
2.0
IT
(A)
IH
IH(25°C)
1.5
2
1.0
(1)
1
(2)
(3)
0.5
0
−50
0
50
100
150
0.0
0.0
Tj (°C)
Fig 12. Normalized holding current as a function of
junction temperature
1.0
1.5
VT (V)
2.0
Fig 13. On-state current as a function of on-state
voltage
ACT108W-600E_4
Product data sheet
0.5
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 9 December 2009
8 of 13
ACT108W-600E
NXP Semiconductors
AC Thyristor power switch
003aac813
12
A
B
003aac814
12
A
B
10
8
8
6
4
4
2
0
0
25
50
75
100
125
25
50
75
100
Tj (°C)
Fig 14. Normalized rate of rise of off-state voltage as a
function of junction temperature
003aac815
2.0
125
Tj (°C)
Fig 15. Normalized critical rate of rise of commutating
current as a function of junction temperature
003aac817
1.2
A [B]
VCL
VCL(25°C)
A [spec]
1.5
0.8
1.0
0.4
0.5
0
10−1
1
102
10
0
−50
B (V/μs)
50
100
150
Tj (°C)
Fig 16. Normalized critical rate of change of
commutating current as a function of critical
rate of change of commutating voltage;
minimum values
Fig 17. Normalized clamping voltage (upper limit) as a
function of junction temperature; minimum
values
ACT108W-600E_4
Product data sheet
0
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 9 December 2009
9 of 13
ACT108W-600E
NXP Semiconductors
AC Thyristor power switch
7. Package outline
Plastic surface-mounted package with increased heatsink; 4 leads
D
SOT223
E
B
A
X
c
y
HE
v M A
b1
4
Q
A
A1
1
2
3
Lp
bp
e1
w M B
detail X
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.8
1.5
0.10
0.01
0.80
0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
4.6
2.3
7.3
6.7
1.1
0.7
0.95
0.85
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
SOT223
JEITA
SC-73
EUROPEAN
PROJECTION
ISSUE DATE
04-11-10
06-03-16
Fig 18. Package outline SOT223 (SC-73)
ACT108W-600E_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 9 December 2009
10 of 13
ACT108W-600E
NXP Semiconductors
AC Thyristor power switch
8. Revision history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
ACT108W-600E_4
20091209
Product data sheet
-
ACT108W-600E_3
Modifications:
•
Various changes to content.
ACT108W-600E_3
20091021
Product data sheet
-
ACT108W-600E_2
ACT108W-600E_2
20090526
Product data sheet
-
ACT108W-600E_1
ACT108W-600E_1
20090429
Product data sheet
-
-
ACT108W-600E_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 9 December 2009
11 of 13
ACT108W-600E
NXP Semiconductors
AC Thyristor power switch
9. Legal information
9.1
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term 'short data sheet' is explained in section "Definitions".
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URLhttp://www.nxp.com.
9.2
Definitions
Draft— The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet— A short data sheet is an extract from a full data sheet with
the same product type number(s) and title. A short data sheet is intended for
quick reference only and should not be relied upon to contain detailed and full
information. For detailed and full information see the relevant full data sheet,
which is available on request via the local NXP Semiconductors sales office.
In case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
9.3
Disclaimers
General— Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes— NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use— NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications— Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data— The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Limiting values— Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale— NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
athttp://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license— Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control— This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
TrenchMOS— is a trademark of NXP B.V.
10. Contact information
For more information, please visit:http://www.nxp.com
For sales office addresses, please send an email to:[email protected]
ACT108W-600E_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 9 December 2009
12 of 13
ACT108W-600E
NXP Semiconductors
AC Thyristor power switch
11. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
9.1
9.2
9.3
9.4
10
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .6
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . .12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Contact information. . . . . . . . . . . . . . . . . . . . . .12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 9 December 2009
Document identifier: ACT108W-600E_4