PHILIPS PBSS4240Y

DISCRETE SEMICONDUCTORS
DATA SHEET
age
MBD128
PBSS4240Y
40 V low VCEsat NPN transistor
Product specification
2001 Jul 13
Philips Semiconductors
Product specification
40 V low VCEsat NPN transistor
PBSS4240Y
FEATURES
QUICK REFERENCE DATA
• Low collector-emitter saturation voltage
SYMBOL
• High current capability
VCEO
collector-emitter voltage
40
V
ICM
peak collector current
3
A
RCEsat
equivalent on-resistance
<200
mΩ
• Improved device reliability due to reduced heat
generation
• Replacement for SOT89/SOT223 standard packaged
transistors due to enhanced performance.
PARAMETER
MAX.
UNIT
PINNING
PIN
APPLICATIONS
• Supply line switching circuits
• Battery management applications
• DC/DC converter applications
• Strobe flash units
• Heavy duty battery powered equipment (motor and lamp
drivers).
DESCRIPTION
1
collector
2
collector
3
base
4
emitter
5
collector
6
collector
DESCRIPTION
handbook, halfpage
NPN low VCEsat transistor in a SOT363 (SC-88) plastic
package.
PNP complement: PBSS5240Y.
6
5
4
1, 2, 5, 6
3
MARKING
4
PBSS4240Y
1
MARKING CODE(1)
TYPE NUMBER
3
MAM441
42*
Note
Fig.1
1. * = p: made in Hongkong.
* = t: made in Malaysia.
2001 Jul 13
2
Top view
2
Simplified outline (SOT363; SC-88) and
symbol.
Philips Semiconductors
Product specification
40 V low VCEsat NPN transistor
PBSS4240Y
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
40
V
VCEO
collector-emitter voltage
open base
−
40
V
VEBO
emitter-base voltage
open collector
−
5
V
IC
collector current (DC)
−
2
A
ICM
peak collector current
−
3
A
IBM
peak base current
−
300
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
−
270
mW
Tamb ≤ 25 °C; note 2
−
430
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Notes
1. Device mounted on a printed-circuit board, single side copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single side copper, tinplated and mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
VALUE
UNIT
in free air; note 1
463
K/W
in free air; note 2
291
K/W
Notes
1. Device mounted on a printed-circuit board, single side copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single side copper, tinplated and mounting pad for collector 1 cm2.
2001 Jul 13
3
Philips Semiconductors
Product specification
40 V low VCEsat NPN transistor
PBSS4240Y
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector-base cut-off current
CONDITIONS
MIN.
TYP.
MAX.
VCB = 30 V; IE = 0
−
−
100
nA
VCB = 30 V; IE = 0; Tj = 150 °C
−
−
50
µA
nA
IEBO
emitter-base cut-off current
VEB = 4 V; IC = 0
−
−
100
hFE
DC current gain
VCE = 2 V; IC = 100 mA
350
470
−
VCE = 2 V; IC = 500 mA
300
450
−
VCE = 2 V; IC = 1 A
300
420
−
VCEsat
collector-emitter saturation
voltage
UNIT
VCE = 2 V; IC = 2 A
150
250
−
IC = 100 mA; IB = 1 mA
−
45
70
mV
IC = 500 mA; IB = 50 mA
−
70
100
mV
IC = 750 mA; IB = 15 mA
−
120
180
mV
IC = 1 A; IB = 50 mA
−
130
180
mV
IC = 2 A; IB = 200 mA
−
240
320
mV
−
140
<200
mΩ
RCEsat
equivalent on-resistance
IC = 500 mA; IB = 50 mA; note 1
VBEsat
base-emitter saturation voltage
IC = 2 A; IB = 200 mA
−
−
1.1
V
VBEon
base-emitter turn-on voltage
VCE = 2 V; IC = 100 mA
−
−
0.75
V
Cc
collector capacitance
VCB = 10 V; IE = Ie = 0; f = 1 MHz
−
15
20
pF
fT
transition frequency
IC = 100 mA; VCE = 10 V; f = 100 MHz
100
230
−
MHz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2001 Jul 13
4
Philips Semiconductors
Product specification
40 V low VCEsat NPN transistor
PBSS4240Y
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT363
D
E
B
y
X
A
HE
6
v M A
4
5
Q
pin 1
index
A
A1
1
2
e1
3
bp
c
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.30
0.20
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.25
0.15
0.2
0.2
0.1
OUTLINE
VERSION
SOT363
2001 Jul 13
REFERENCES
IEC
JEDEC
EIAJ
SC-88
5
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Product specification
40 V low VCEsat NPN transistor
PBSS4240Y
DATA SHEET STATUS
DATA SHEET STATUS(1)
PRODUCT
STATUS(2)
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2001 Jul 13
6
Philips Semiconductors
Product specification
40 V low VCEsat NPN transistor
PBSS4240Y
NOTES
2001 Jul 13
7
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SCA 72
© Philips Electronics N.V. 2001
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Printed in The Netherlands
613514/01/pp8
Date of release: 2001
Jul 13
Document order number:
9397 750 08385