Features • • • • Gain control in 20-dB steps Very low I/Q amplitude and phase errors High input P1dB Buffered IF OUT available through baseband output Applications 65 - 300 MHz SiGe IF Receiver / Demodulator • Infrastructure digital communication systems • GSM/cellular transceivers • ISM band transceivers Electrostatic sensitive device. Observe precautions for handling. T0797 Description The T0797 is a multi-purpose demodulator RFIC. The silicon monolithic integrated circuit is a designed in Atmels advanced SiGe technology. This demodulator is capable of both quadrature demodulation or direct IF output. Features include switchable gain control on a frequency range from 65 MHz to 300 MHz. The device performs a very low amplitude as well as phase error and allows high input P1dB. The T0797 targets a variety of system applications for communications including 3G wireless. Block Diagram Figure 1. GC1 GC2 5 4 2 1 8 ϕ 9 16 15 BBQP BBQN 13 12 LOP LON IFP IFN BBIP BBIN Rev. A2, 03-Dec-01 Preliminary Information 1 (10) Preliminary Information Ordering Information Extended Type Number T0797 Package Remarks TSSOP16 Pin Configuration Figure 2. BBIN BBIP VCC GC2 GC1 GND VCC IFP 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 BBQP BBQN VCC LOP LON GND VCC IFN Pin Description Pin Symbol Function 1 BBIN Baseband I-axis negative output 2 BBIP Baseband I-axis positive output 3 VCC 5 V power supply 4 GC2 Gain control input, stage 2 5 GC1 Gain control input, stage 1 6 GND Ground 7 VCC 5 V power supply 8 IFP IF positive input 9 IFN IF negative input 10 VCC 5 V power supply 11 GND Ground 12 LON Local oscillator, negative input 13 LOP Local oscillator, positive input 14 VCC 5 V power supply 15 BBQN Baseband Q-axis negative output 16 BBQP Baseband Q-axis positive output 2 (10) T0797 Rev. A2, 03-Dec-01 T0797 Absolute Maximum Ratings All voltages are referred to GND. Parameter Supply voltage Symbol Value Unit VCC 5.5 V LO input LOP, LON 10 dBm IF input IFN, IFP 10 V Operating temperature TOP -40 to +85 °C Storage temperature Tstg -65 to +150 °C Symbol Value Unit RthJA tbd K/W Note: The part may not survive all maximums applied simultaneously Thermal Resistance Parameter Junction ambient Electrical Characteristics Test conditions: VCC = 5 V, Tamb = 25°C, LO input: 0 dBm@200 MHz IF input: @200.1 MHz, GC1 = 0, GC2 = 0; 0 dBm IF input: @200.1 MHz, GC1 = 1, GC2 = 0; -20 dBm IF input: @200.1 MHz, GC1 = 1, GC2 = 1; -40 dBm No. 1 Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type* 65 120 220 300 MHz B IF input (I/Q mixing to baseband) 1.1 Frequency range 8, 9 f 1.2 Return loss 8, 9 RL 20 dB D 1.3 Gain 8, 9 G 35 dB A Gain set = high; GC1 = GC2 = 1 1.4 Input P1dB 8, 9 P1dB –30 dBm C 1.5 Input IP3 8, 9 IIP3 –20 dBm B 1.6 Noise figure 8, 9 NF 6 dB D 1.7 Gain 8, 9 G 15 dB A Gain set = high; GC1 = 1; GC2 = 0 1.8 Input P1dB 8, 9 P1dB –10 dBm C 1.9 Input IP3 8, 9 IIP3 0 dBm B 1.10 Noise figure 8, 9 NF 10 dB D 1.11 Gain 8, 9 G –5 dB A Gain set = high; GC1 = GC2 = 0 –3 1.12 Input P1dB 8, 9 P1dB 10 dBm C 1.13 Input IP3 8, 9 IIP3 20 dBm B 1.14 Noise figure 8, 9 NF 30 dB D *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Preliminary Information Rev. A2, 03-Dec-01 3 (10) Preliminary Information Electrical Characteristics Test conditions: VCC = 5 V, Tamb = 25°C, LO input: 0 dBm@200 MHz IF input: @200.1 MHz, GC1 = 0, GC2 = 0; 0 dBm IF input: @200.1 MHz, GC1 = 1, GC2 = 0; -20 dBm IF input: @200.1 MHz, GC1 = 1, GC2 = 1; -40 dBm No. 2 Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type* 65 120 220 300 MHz B Stuck Mixer (DC to LO port – gain-controlled amplifier) 2.1 Frequency range 8, 9 f 2.2 Return loss 8, 9 RL 20 dB D 2.3 Gain 8, 9 G 40 dB A Gain set = high; GC1 = GC2 = 1 2.4 Input P1dB 8, 9 P1dB –26 dBm C 2.5 Input IP3 8, 9 IIP3 –16 dBm B 2.6 Noise figure 8, 9 NF 6 dB D 2.7 Gain 8, 9 G 20 dB A Gain set = high; GC1 = 1; GC2 = 0 2.8 Input P1dB 8, 9 P1dB –6 dBm C 2.9 Input IP3 8, 9 IIP3 4 dBm B 2.10 Noise figure 8, 9 NF 9 dB D 2.11 Gain 8, 9 G 0 dB A Gain set = high; GC1 = GC2 = 0 2.12 Input P1dB 8, 9 P1dB 14 dBm C 2.13 Input IP3 8, 9 IIP3 24 dBm B 2.14 Noise figure 8, 9 NF 30 dB D 3 I/Q Output fI/Q DC 500 MHz D 1, 2, 15, 16 –0.2 +0.2 dB A I/Q phase error 1, 2, 15, 16 –2 +2 deg A 3.4 I/Q output common mode voltage 1, 2, 15, 16 V A 3.5 I/Q output differential offset voltage 1, 2, 15, 16 Voffset 10 mV A +3 dBm D dB D V A mA A 3.1 I/Q output frequency range 1, 2, 15, 16 3.2 I/Q output amplitude error 3.3 4 2.5 LO input 4.1 LO input level 12, 13 PLO 4.2 Return loss 12, 13 RLLO 5 Miscellaneous 5.1 Supply voltage 3, 7, 10, 14 VCC 5.2 Supply current 3, 7, 10, 14 ICC –3 0 20 4.75 5 5.25 180 *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter 4 (10) T0797 Rev. A2, 03-Dec-01 T0797 Typical Device Performance Figure 3. Gain vs. pin high-gain state (11) Gain (dB) 35 34 33 32 31 30 -40 -38 -36 -34 -32 -30 -28 -26 Pin (dBm ) Figure 4. Gain vs. pin low-gain state (00) -3 Gain (dB) -4 -5 -6 -7 -8 0 5 10 15 Pin (d Bm ) Figure 5. Gain vs. pin medium-gain state (10) Gain (dB) 16 15 14 13 12 11 -20 -18 -16 -14 -12 -10 -8 -6 Pin (dBm ) Preliminary Information Rev. A2, 03-Dec-01 5 (10) Preliminary Information Demo Test Board Schematic Figure 6. L4 R8 R5 L1 C17 C15 C2 C5 C18 C16 C3 C4 L5 R7 BBIN BBQP BBIP 5V R3 R1 1 2 3 4 5 6 7 8 Vcc C20 GC2 GC1 Vcc T0797 5V BBQN L2 R6 16 15 14 13 12 11 10 9 Vcc C11 C21 T2 Vcc C6 5V C12 C19 C7 Vcc LOin C8 T1 L3 IFin C1 Bill of Materials Component Designator Value Vendor Part Number Description Atmel T0797 IF receiver J2, J3, J4, J5, J6, J7 Johnson Components 142-0701-851 SMA end launch connector T1, T2 Mini-Circuits TC1-1 Transformer D1 C1 1uF 1206 size supply bypass capacitor 1 kohm 0603 size C6, C19, C20, C21 1nF 0603 size L1, L2, L3, L4, L5 1uH 1210 size C7, C8, C11, C12 68pF 0603 size R5, R6, R7, R8 0 Ohm 1206 size C2, C3, C4, C5, C15, C16, C17, C18 820pF 0603 size R1, R3 6 (10) T0797 Rev. A2, 03-Dec-01 T0797 Demo Test Board (Fully Asembled PCB) Figure 7. J7 J6 C18 C17 C16 C15 L5 J4 L4 U1 C3 C21 C11 C12 C20 C6 S2 C4 L2 R6 R5 1.96 R3 C5 C2 L1 R8 R7 J5 J3 T2 C19 C7 C8 S1 T1 R1 L3 1 2 J1 C1 J2 1.96 Note: Dimensions in inches Recommended Package Footprint Figure 8. 1.25 3.0 0.25 0.74 0.4 0.74 3.0 φ0.33 via 0.7 0.9 6.9 - Indicates metalization all units are in mm - vias connect pad to underlying ground plane Remark: Heatslug must be soldered to GND Preliminary Information Rev. A2, 03-Dec-01 7 (10) Preliminary Information Package Information 8 (10) T0797 Rev. A2, 03-Dec-01 T0797 Ozone Depleting Substances Policy Statement It is the policy of Atmel Germany GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Atmel Germany GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Atmel Germany GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. Preliminary Information Rev. A2, 03-Dec-01 9 (10) A tmel Sales Offices France 3, Avenue du Centre 78054 St.-Quentin-en-Yvelines Cedex Tel: +33 1 30 60 70 00 Fax: +33 1 30 60 71 11 Germany Erfurter Strasse 31 85386 Eching Tel: +49 89 319 70 0 Fax: +49 89 319 46 21 Kruppstrasse 6 45128 Essen Tel: +49 201 247 30 0 Fax: +49 201 247 30 47 Theresienstrasse 2 74072 Heilbronn Tel: +49 7131 67 36 36 Fax: +49 7131 67 31 63 Italy Via Grosio, 10/8 20151 Milano Tel: +39 02 38 03 71 Fax: +39 02 38 03 72 34 Sweden Kavallerivaegen 24, Rissne 17402 Sundbyberg Tel: +46 8 587 48 800 Fax: +46 8 587 48 850 United Kingdom Easthampstead Road Bracknell Berkshire RG12 1LX Tel: +44 1344 707 300 Fax: +44 1344 427 371 USA Western 2325 Orchard Parkway San Jose, California 95131 Tel: +1 408 441 0311 Fax: +1 408 436 4200 USA Eastern 1465 Route 31, Fifth floor Annandale New Jersey 08801 Tel: +1 908 848 5208 Fax: +1 908 848 5232 Spain Principe de Vergara, 112 28002 Madrid Tel: +34 91 564 51 81 Fax: +34 91 562 75 14 Hong Kong Room #1219, Chinachem Golden Plaza 77 Mody Road, Tsimhatsui East East Kowloon, Hong Kong Tel: +852 23 789 789 Fax: +852 23 755 733 Korea 25-4, Yoido-Dong, Suite 605, Singsong Bldg. 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No licenses to patents or other intellectual property of Atmel Germany GmbH are granted by the Company in connection with the sale of Atmel Germany GmbH products, expressly or by implication. Atmel Germany GmbH’s products are not authorized for use as critical components in life support devices or systems. Data sheets can also be retrieved fron the Internet: http://www.atmel-wm.com Rev. A2, 03-Dec-01