Features • • • • • • • No External Components Except PIN Diode Supply-voltage Range: 2.7 V to 5.5 V Automatic Sensitivity Adaptation (AGC) Automatic Strong Signal Adaptation (ATC) Automatic Supply Voltage Adaptation Enhanced Immunity against Ambient Light Disturbances Available for Carrier Frequencies between 30 kHz to 76 kHz; adjusted by Zener-Diode Fusing ±2.5% • TTL and CMOS Compatible Applications • Audio Video Applications • Home Appliances • Remote Control Equipment Description The IC T2526 is a complete IR receiver for data communication developed and optimized for use in carrier-frequency-modulated transmission applications. Its function can be described using the block diagram of Figure 1. The input stage meets two main functions. First it provides a suitable bias voltage for the PIN diode. Secondly the pulsed photo-current signals are transformed into a voltage by a special circuit which is optimized for low noise applications. After amplification by a Controlled Gain Amplifier (CGA) the signals have to pass a tuned integrated narrow bandpass filter with a center frequency f0 which is equivalent to the choosen carrier frequency of the input signal The demodulator is used first to convert the input burst signal to a digital envelope output pulse and to evaluate the signal information quality, i.e., unwanted pulses will be suppressed at the output pin. All this is done by means of an integrated dynamic feedback circuit which varies the gain as a function of the present enviromental conditions (ambient light, modulated lamps etc.). Other special features are used to adapt to the current application to secure best transmission quality. The T2526 operates in a supply-voltage range from 2.7 V to 5.5 V. By default, the T2526 is optimized for best performance within 2.7 V to 3.3 V. Low-voltage IR Receiver ASSP T2526 Figure 1. Block Diagram VS IN Input Oscillator CGA and filter Demodulator OUT Microcontroller AGC/ATC and digital control Carrier frequency f0 T2526 Modulated IR signal min 6 or 10 pulses GND Rev. 4597C–AUTO–11/03 Pin Configuration Figure 2. Pinning SO8 and TSSOP8 VS 1 8 NC NC 2 7 NC OUT 3 6 GND NC 4 5 IN Pin Description Pin Symbol Function 1 VS Supply voltage 2 NC Not connected 3 OUT 4 NC Not connected 5 IN Input PIN-diode 6 GND 7 NC Not connected 8 NC Not connected Data output Ground Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameter Supply voltage Symbol Value Unit VS -0.3 to 6 V IS 3 mA Input voltage VIN -0.3 to VS V Input DC current at VS = 5 V IIN 0.75 mA Output voltage VO -0.3 to VS V Supply current IO 10 mA Operating temperature Tamb -25 to +85 °C Storage temperature Tstg -40 to +125 °C Power dissipation at Tamb = 25°C Ptot 30 mW Output current 2 T2526 4597C–AUTO–11/03 T2526 Thermal Resistance Parameter Symbol Value Unit Junction ambient SO8 RthJA 130 k/W Junction ambient TSSOP8 RthJA tbd K/W Electrical Characteristics, 3-V Operation Tamb = 25°C, VS = 3 V unless otherwise specified. No. 1 Parameters Pin Symbol Min. Typ. Max. Unit Type* 1 VS 2.7 3.0 3.3 V C 1 IS 0.7 0.9 1.3 mA B kW A 250 mV B Vs V B mA B µA C Supply 1.1 Supply-voltage range 1.2 Supply current 2 Test Conditions IIN =0 Output 2.1 Internal pull-up resistor(1) Tamb = 25°C See Figure 12 on page 9 1, 3 RPU 2.2 Output voltage low R2 = 2.4 kW See Figure 12 on page 9 3, 6 VOL 2.3 Output voltage high 3, 1 VOH 2.4 Output current clamping R2 = 0 See Figure 12 on page 9 3, 6 IOCL 3 30/40 VS - 0.25 8 Input 3.1 Input DC current VIN = 0 See Figure 12 on page 9 5 IIN_DCMAX 3.2 Input DC current See Figure 5 on page 6 VIN = 0; Vs = 3 V Tamb = 25°C 5 IIN_DCMAX -350 µA B 3.3 Minimum detection threshold current See Figure 3 on page 6 3 IEemin -700 pA B 3 IEemin -1500 pA C 3 IEemax µA D 3.4 3.5 Test signal: See Figure 11 on page 9 VS = 3 V Tamb= 25°C, IIN_DC=1µA Minimum detection square pp threshold current with AC burst N=16 current disturbance f = f0; tPER = 10 ms IIN_AC100 = Figure 10 on page 8 3 µA at 100 Hz BER = 50(2) Maximum detection threshold current with VIN > 0V Test signal: See Figure 11 on page 9 VS = 3 V, Tamb = 25°C IIN_DC = 1 µA square pp burst N = 16 f = f0; tPER = 10 ms Figure 10 on page 8 BER = 5%(2) -150 -200 *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. Depending on version, see “Ordering Information” 2. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 3. After transformation of input current into voltage 3 4597C–AUTO–11/03 Electrical Characteristics, 3-V Operation (Continued) Tamb = 25°C, VS = 3 V unless otherwise specified. No. 4 Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type* Controlled Amplifier and Filter 4.1 Maximum value of variable gain (CGA) GVARMAX 51 dB D 4.2 Minimum value of variable gain (CGA) GVARMIN -5 dB D 4.3 Total internal amplification(3) GMAX 71 dB D 4.4 Center frequency fusing accuracy of bandpass 4.5 Overall accuracy center frequency of bandpass 4.6 Overall accuracy center frequency of bandpass Tamb = 0 to 70°C 4.7 BPF bandwidth -3 dB; f0 = 38 kHz; See Figure 9 on page 8 VS = 3 V, Tamb = 25°C f03V_FUSE -2.5 f0 +2.5 % A f03V -5.5 f0 +3.5 % C f03V -4.5 f0 +3.0 % C kHz C B 3.8 *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. Depending on version, see “Ordering Information” 2. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 3. After transformation of input current into voltage Electrical Characteristics, 5-V Operation Tamb = 25°C, VS = 5 V unless otherwise specified. No. 5 Parameters Pin Symbol Min. Typ. Max. Unit Type* 1 VS 4.5 5.0 5.5 V C 1 IS 0.9 1.2 1.6 mA B kW A 250 mV B Vs V B mA B µA C µA B Supply 5.1 Supply-voltage range 5.2 Supply current 6 Test Conditions IIN =0 Output 6.1 Internal pull-up resistor(1) Tamb = 25°C See Figure 12 on page 9 1, 3 RPU 6.2 Output voltage low R2 = 2.4 kW See Figure 12 on page 9 3, 6 VOL 6.3 Output voltage high 6.4 7 Output current clamping 3, 1 VOH R2 = 0 See Figure 12 on page 9 3, 6 IOCL 30/40 VS - 0.25 8 Input 7.1 Input DC current VIN = 0 See Figure 12 on page 9 5 IIN_DCMAX 7.2 Input DC-current See Figure 6 on page 7 VIN = 0; Vs = 5 V Tamb = 25°C 5 IIN_DCMAX -400 -700 *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 4 1. Depending on version, see “Ordering Information” 2. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 3. After transformation of input current into voltage T2526 4597C–AUTO–11/03 T2526 Electrical Characteristics, 5-V Operation (Continued) Tamb = 25°C, VS = 5 V unless otherwise specified. No. Parameters 7.3 Min. detection threshold current See Figure 4 on page 6 7.4 7.5 8 Test Conditions Test signal: See Figure 11 on page 9 VS = 5 V Tamb = 25°C IIN_DC = 1µA Min. detection threshold square pp current with AC current burst N = 16 disturbance IIN_AC100 = f = f0; tPER = 10 ms 3 µA at 100 Hz Figure 10 on page 8 BER = 50(2) Max. detection threshold current with VIN > 0V Test signal: See Figure 11 on page 9 VS = 5 V, Tamb = 25°C IIN_DC = 1µA square pp burst N = 16 f = f0; tPER = 10 ms Figure 10 on page 8 BER = 5%(2) Pin Symbol 3 IEemin 3 IEemin 3 IEemax Min. Typ. Max. Unit Type* -890 pA B -2500 pA C µA D -500 Controlled Amplifier and Filter 8.1 Maximum value of variable gain (CGA) GVARMAX 51 dB D 8.2 Minimum value of variable gain (CGA) GVARMIN -5 dB D 8.3 Total internal amplification(3) GMAX 71 dB D 8.4 Resulting center frequency fusing accuracy f05V f03V-FUSE + 0.5 % A f0 fused at VS = 3 V VS = 5 V, Tamb = 25°C *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. Depending on version, see “Ordering Information” 2. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 3. After transformation of input current into voltage ESD All pins Þ 2000V HBM; 200V MM, MIL-STD-883C, Method 3015.7 Reliability Electrical qualification (1000h) in molded SO8 plastic package 5 4597C–AUTO–11/03 Typical Electrical Curves at Tamb = 25°C Figure 3. IEemin versus IIN_DC , VS = 3 V 100.0 VS = 3 V f = f0 I Eemin (nA) 10.0 1.0 0.1 0.1 1.0 10.0 100.0 1000.0 100.0 1000.0 I IN_DC (µA) Figure 4. IEemin versus IIN_DC , VS = 5 V 100.0 VS = 5 V f = f0 I Eemin (nA) 10.0 1.0 0.1 0.1 1.0 10.0 I IN_DC (µA) Figure 5. VIN versus IIN_DC, VS = 3 V 3.5 VS = 3 V 3.0 f = f0 V IN (V) 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.1 1.0 I 6 10.0 IN_DC 100.0 1000.0 (µA) T2526 4597C–AUTO–11/03 T2526 Figure 6. VIN versus IIN_DC, VS = 5 V 3.5 VS = 5 V 3.0 f = f0 V IN (V) 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.1 1.0 I 10.0 IN_DC 100.0 1000.0 (µA) Figure 7. Data Transmission Rate, VS = 3 V 5000 4500 VS = 3 V 4000 Short burst 3500 Bits/s 3000 2500 Standard type 2000 1500 Lamp type 1000 500 0 25.0 35.0 45.0 55.0 65.0 75.0 85.0 f 0 (kHz) Figure 8. Data Transmission Rate, VS = 5 V 5000 4500 VS = 5 V 4000 Short burst 3500 Standard type Bits/s 3000 2500 Lamp type 2000 1500 1000 500 0 25.0 35.0 45.0 55.0 65.0 75.0 85.0 f 0 (kHz) 7 4597C–AUTO–11/03 Figure 9. Typical Bandpass Curve 1.10 VS = 3 V Relative amplitude 1.00 0.90 0.80 Bandwidth (-3 dB) 0.70 0.60 0.50 0.40 0.92 0.94 0.96 0.98 1.00 1.02 1.04 1.06 1.08 f/f 0 Q = f/f0/B; B => -3 dB values. Example: Q = 1/(1.047 - 0.954) = 11 Figure 10. Illustration of Used Terms Example: f = 30 kHz, burst with 16 pulses, 16 periods Period (P = 16) 1066 µs 533 µs 7 IN 1 OUT tDON Burst (N = 16 pulses) 16 7 7 tDOFF 33 µs 533 µs Envelope 16 Envelope 1 17056 µs/data word OUT Telegram pause Data word Data word 17 ms TREF = 62 ms 8 T2526 4597C–AUTO–11/03 T2526 Figure 11. Test Circuit IEe = DU1/400k DU1 IEe 1 nF VDD = 3 V to 5 V IIN_DC 400k R1 = 220 VS 20k IIN IIN_AC100 VPulse IN 1 nF DU2 16 OUT GND IIN_DC = DU2/40k 20k f0 T2526 C1 4.7 µF DC + tPER = 10 ms Figure 12. Application Circuit VDD = 3 V to 5 V *) optional R1 = 220 R2* > 2,4k RPU IS VS IOCL IN IIN T2526 Microcontroller OUT GND C1 4.7 µF IIN_DC IEe VIN VO C2* = 470 pF 9 4597C–AUTO–11/03 Chip Dimensions Figure 13. Chip Size in µm 1210, 1040 GND IN 783, 887 336, 906 Scribe Length VS 55, 652 T2526 55, 62 FUSING OUT 0, 0 Width Note: Pad coordinates are given for lower left corner of the pad in µm from the origin 0,0 Dimensions Pad metallurgy Finish Note: 10 Length inclusive scribe 1.15 mm Width inclusive scribe 1.29 mm Thickness 290 µ ± 5% Pads 90 µ ´ 90 µ Fusing pads 70 µ ´ 70 µ Material AlCu/AlSiTi(1) Thickness 0.8 µm Material Si3N4/SiO2 Thickness 0.7/0.3 µm 1. Value depends on manufacture location. T2526 4597C–AUTO–11/03 T2526 Ordering Information Delivery: unsawn wafers (DDW) in box, SO8 (150 mil) and TSSOP8 (3 mm body). Extended Type Number PL(2) RPU(3) D(4) (5) 2 30 2179 T2526N1xx -DDW 1 30 2179 T2526N2xx(1)-yyy(5) 2 40 1404 T2526N3xx(1)-DDW 1 40 1404 T2526N6xx(1)-yyy(5) 2 30 3415 1 30 3415 (1) T2526N0xx -yyy (1) (1) T2526N7xx -DDW Notes: 1. 2. 3. 4. 5. Type Standard type: ³ 10 pulses, enhanced sensibility, high data rate Lamp type: ³ 10 pulses, enhanced suppression of disturbances, secure data transmission Short burst type: ³ 6 pulses, enhanced data rate xx means the used carrier frequency value f0 30, 33, 36, 38, 40, 44 or 56 kHz (76 kHz type on request) Two pad layout versions (see Figure 14 and Figure 15) available for different assembly demand Integrated pull-up resistor at pin OUT (see electrical characteristics) Typical data transmission rate up to bit/s with f0 = 56 kHz, VS = 5 V (see Figure 10 on page 8) yyy means kind of packaging: .................... .......DDW -> unsawn wafers in box .................... .......6AQ -> (only on request, TSSOP8 taped and reeled) Pad Layout Figure 14. Pad Layout 1 (DDW only) GND IN OUT T2526 VS FUSING Figure 15. Pad Layout 2 (DDW, SO8 or TSSOP8) (6) GND (5) IN (1) VS T2526 (3) OUT FUSING 11 4597C–AUTO–11/03 Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Regional Headquarters Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland Tel: (41) 26-426-5555 Fax: (41) 26-426-5500 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong Tel: (852) 2721-9778 Fax: (852) 2722-1369 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany Tel: (49) 71-31-67-0 Fax: (49) 71-31-67-2340 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France Tel: (33) 2-40-18-18-18 Fax: (33) 2-40-18-19-60 ASIC/ASSP/Smart Cards 1150 East Cheyenne Mtn. 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