Features • • • • • Supply Voltage: 4.5 V to 5.5 V Automatic Sensitivity Adaptation (AGC) Automatic Strong Signal Adaptation (ATC) Carrier Frequency is 56 kHz; Adjusted by Zener Diode Fusing ±4% TTL and CMOS Compatible Applications • All Kinds of IR Remote Control Systems • Carrier Frequency Modulated Transmission Systems Benefits • No External Components Needed • Enhanced Immunity Against Ambient Light Disturbances IR Receiver ASIC ATA2516 Description The IC ATA2516 is a complete IR receiver for data communication systems. The device is developed and optimized for use in carrier frequency modulated transmission applications. Its function can be described using the block diagram in Figure 1 on page 2. The input stage meets two main functions. First, it provides a suitable bias voltage for the PIN diode. Secondly, the pulsed photo current signals are transformed into a voltage by a special circuit which is optimized for low noise application. After amplification by a Controlled Gain Amplifier (CGA), the signals pass a tuned integrated narrow bandpass filter with a center frequency f 0 equivalent to the chosen carrier frequency of the input signal. The demodulator is used to convert the input burst signal to a digital envelope output pulse and to evaluate the signal information quality, i.e., unwanted pulses will be suppressed at the output pin. All this is done by means of an integrated dynamic feedback circuit which varies the gain as a function of changing environmental conditions (ambient light, modulated lamps etc.). A 7-bit digital-to-analog converter is used to adjust the gain of the controlled gain amplifier. Other special features serve to adapt to the current application to secure best transmission quality. The ATA2516 operates in a voltage supply range of 4.5 V - 5.5 V. Rev. 4801B–AUTO–10/04 Figure 1. Block Diagram VS IN OUT CGA and filter Input Demodulator Microcontroller AGC/ATC and digital control Oscillator Carrier frequency f0 Modulated IR signal min 6 pulses GND Pin Configuration Figure 2. Pinning TSSOP8 VS NC OUT TEST 1 2 3 4 8 7 6 5 NC NC GND IN Pin Description 2 Pin Symbol Function 1 VS Supply voltage 2 NC Not connected 3 OUT Data output 4 TEST Test signal (not connected or connected to GND) 5 IN 6 GND 7 NC Not connected 8 NC Not connected Input PIN diode Ground ATA2516 4801B–AUTO–10/04 ATA2516 Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameters Symbol Value Unit Supply voltage VS -0.3 to 6 V Supply current (DC current IIN_DC = 0) IS 0.5 mA VIN -0.3 to VS V IIN_DC 0.8 mA VO -0.3 to VS V Operating temperature Tamb -40 to +85 °C Storage temperature Tstg -40 to +125 °C Power dissipation at Tamb = 25°C Ptot 10 mW Symbol Value Unit RthJA TBD K/W Input voltage Input DC current at VS = 5 V Output voltage Thermal Resistance Parameters Junction ambient TSSOP8 Electrical Characteristics Tamb = 25°C, VS = 5 V unless otherwise specified. No. 1 Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type* 1 VS 4.5 5 5.5 V C 0.29 0.34 mA A 0.4 mA B 100 135 kΩ A 100 250 mV A VS V A Supply 1.1 Supply-voltage range 1.2 Supply current IIN_DC = 0; see Figure 6 on page 7 1 IS 1.3 Supply current IIN_DC = 0; see Figure 6 on page 7 Tamb = -40°C to 85°C 1 IS 2 Output 2.1 Internal pull-up resistor Tamb = 25°C; see Figure 3 on page 5 1, 3 RPU 2.2 Output voltage low RLoad = 2.4 kΩ 3, 6 VOL 2.3 Output voltage high 3, 1 VOH VS 0.25 3 65 Input Maximum input DC current VIN = 0; see Figure 8 on page 7 5 IIN_DCMAX 580 760 µA A 3.2 Maximum input DC current VIN = 0; Tamb = 85°C 5 IIN_DCMAX 490 650 µA C 3.3 Number of pulses required 3.1 5 6 A *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Note: BER = bit error rate; e.g. BER = 5% means that with P = 20 at the input pins 19 to 21, pulses may appear at the OUT pin. 3 4801B–AUTO–10/04 Electrical Characteristics (Continued) Tamb = 25°C, VS = 5 V unless otherwise specified. No. Pin Symbol Min. Typ. Max. Unit Type* Minimum detection threshold current Test signal: see Figure 4 on page 6 VS = 5 V, Tamb = 25°C, IIN_DC = 0 µA; square pp, burst N = 6, f = f0; tPER = 5 ms, Figure 7; BER = 80% 5 IEemin 2.5 4 6.4 nA A 3.5 Minimum detection threshold current Test signal: see Figure 4 on page 6 VS = 5 V, Tamb = 25°C, IIN_DC = 650 µA; square pp, burst N = 6, f = f0; tPER = 5 ms, Figure 7; BER = 80% 5 IEemin 20 30 60 nA A 3.6 Photodiode input capacitance VIN = 0 70 pF D 56 kHz A 3.4 4 Parameters Test Conditions 5, 6 Controlled Amplifier and Filter 4.1 Center frequency of bandpass 4.2 Center frequency zapping accuracy of bandpass 4.3 3 f0 f0 = 56 kHz 3 f0ZAPP -4 f0 +4 % A Overall accuracy center frequency of bandpass Tamb = -40°C to 85°C 3 f0tol -10 f0 +7 % C 4.4 BPF bandwidth -3 dB; f0 = 56 kHz; see Figure 9 on page 8 3 B 4 8 14 kHz C 4.5 Quiescent value of gain control counter VIN = 0; IIN DC = 0 4.6 Single gain step 4.7 Switch-on delay VS = 5 V, Tamb = 25°C, IIN = 20 nA pp, N = 6 3 tdon 4 6 8 Per A 4.8 Pulse width VS = 5 V, Tamb = 25°C, IIN = 20 nA pp, N = 6 3 tpo 4 8 11 Per A 20 A 0.35 dB/c *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Note: BER = bit error rate; e.g. BER = 5% means that with P = 20 at the input pins 19 to 21, pulses may appear at the OUT pin. ESD All pins: 1500 V HBM; 100 MM, MIL-STD-883C, Method 3015.7 Latch-up According JEDEC78 Class2 (HT) Reliability HTOL (1000 h) at Tj = 150°C in molded TSSOP8 plastic package (2 lots) Burn-in With 800 samples from 2 lots 4 ATA2516 4801B–AUTO–10/04 ATA2516 Figure 3. Application Circuit VDD = 4.5 V to 5.5 V R1 = 220 Ω RPU IS VS IN ATA2516 IIN OUT IOmax Microcontroller GND VIN IIN_DC VO C1 = 4.7 µF 5 4801B–AUTO–10/04 Figure 4. Test Circuit IEe = ∆U1/400 KΩ VDD = 5 V ∆U1 IIN_DC 400 kΩ 1 nF R1 = 220 Ω VS 20 kΩ IIN I IN IN 1 nF VPULSE ATA2516 ∆U2 GND IIN_DC = ∆U2 /40 kΩ 20 kΩ OUT f0 C1 4.7 µF 6 DC + tPER = 5 ms Figure 5. Pulse Diagram IIN Repetition rate Burst, N pulses (for example 5 ms) VOUT tpo tdon 6 tdoff ATA2516 4801B–AUTO–10/04 ATA2516 Typical Electrical Curves Figure 6. IS versus Temperature, VS = 5 V 300 290 VS = 5 V IS (µA) 280 270 260 250 240 -40 -20 0 20 40 60 80 100 Temperature (°C) Figure 7. IEemin versus IIN_DC, VS = 5 V, Tamb = 25°C IEemin (nA) 100 VS = 5 V; f = f0 10 1 1 10 100 1000 IIN_DC (µA) Figure 8. VIN versus IIN_DC, VS = 5 V, Tamb = 25°C 3500 3000 VS = 5 V VIN (mV) 2500 2000 1500 VIN = 0 V 1000 500 0 -500 0 100 200 300 400 500 600 700 800 IIN_DC (µA) 7 4801B–AUTO–10/04 Figure 9. Typical Bandpass Curve at Tamb = 25°C 1.10 Relative Amplitude 1.00 0.90 0.80 0.70 0.60 0.50 0.40 51 53 55 57 59 61 63 f0 (kHz) 8 ATA2516 4801B–AUTO–10/04 ATA2516 Ordering Information Extended Type Number Package Remarks ATA2516-6AQ TSSOP8 IR receiver Package Information 9 4801B–AUTO–10/04 Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Regional Headquarters Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland Tel: (41) 26-426-5555 Fax: (41) 26-426-5500 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong Tel: (852) 2721-9778 Fax: (852) 2722-1369 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany Tel: (49) 71-31-67-0 Fax: (49) 71-31-67-2340 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France Tel: (33) 2-40-18-18-18 Fax: (33) 2-40-18-19-60 ASIC/ASSP/Smart Cards 1150 East Cheyenne Mtn. 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