TI TPS40200QDRQ1

TPS40200-Q1
SLUS739D – SEPTEMBER 2006 – REVISED JULY 2011
www.ti.com
WIDE-INPUT-RANGE NONSYNCHRONOUS VOLTAGE-MODE CONTROLLER
Check for Samples: TPS40200-Q1
FEATURES
1
•
•
•
•
•
•
•
•
•
•
•
•
•
DESCRIPTION
Qualified for Automotive Applications
Input Voltage Range 4.5 V to 52 V
Output Voltage (700 mV to 90% VIN)
200-mA Internal P-FET Driver
Voltage Feed-Forward Compensation
Undervoltage Lockout (UVLO)
Programmable Fixed-Frequency
(35-kHz to 500-kHz) Operation
Programmable Short-Circuit Protection
Hiccup Overcurrent Fault Recovery
Programmable Closed Loop Soft Start
700-mV 1% Reference Voltage
External Synchronization
Small 8-Pin SOIC (D) Package
The TPS40200 is a flexible nonsynchronous
controller with a built-in 200-mA driver for P-channel
FETs. The circuit operates with inputs up to 52 V,
with a power-saving feature that turns off driver
current once the external FET has been fully turned
on. This feature extends the flexibility of the device,
allowing it to operate with an input voltage up to 52 V
without dissipating excessive power. The circuit
operates with voltage-mode feedback and has
feed-forward
input-voltage
compensation
that
responds instantly to input voltage change. The
integral 700-mV reference is trimmed to 2%,
providing the means to accurately control low
voltages. The TPS40200 is available in an 8-pin
SOIC and supports many of the features of more
complex controllers. Clock frequency, soft start, and
overcurrent limit are each easily programmed by a
single, external component. The part has
undervoltage lockout (UVLO) and can be easily
synchronized to other controllers or a system clock to
satisfy
sequencing
and/or
noise-reduction
requirements.
APPLICATIONS
•
•
•
•
•
Automotive Controls
Distributed Power Systems
DSL/Cable Modems
Scanners
Telecom
Major sections in this data sheet include:
• Specifications
• General Information
• Example Applications
• Design References
TYPICAL APPLICATION
100
VIN
R5
C3
RSENSE
2 SS
ISNS 7
C5
3 COMP GDRV 6
4 FB
Q1 L1
GND 5
VOUT
C2
D1
R4
R1
Efficiency - %
TPS40200
1 RC
VDD 8
C4
R3
VIN = 8 V
VIN = 12 V
VIN = 16 V
90
C1
80
70
60
R2
C6
VOUT = 5 V
50
0
Figure 1. 12-V to 5-V Buck Converter
With 94% Efficiency
0.5
1
1.5
2
Load Current - A
2.5
3
Figure 2. Typical Efficiency of Application Circuit 1
(Described in Application 1)
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2006–2011, Texas Instruments Incorporated
TPS40200-Q1
SLUS739D – SEPTEMBER 2006 – REVISED JULY 2011
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
Table 1. ORDERING INFORMATION (1)
TA
OUTPUT
VOLTAGE
PACKAGE (2)
PART NUMBER
MEDIUM
QUANTITY
–40°C to 125°C
Adjustable
Plastic small outline (D)
TPS40200QDRQ1
Tape and reel
2500/Reel
(1)
(2)
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
Electrostatic Discharge (ESD) Protection
MAX
UNIT
Human-Body Model (HBM)
MIN
1000
V
Charged-Device Model (CDM)
1500
V
100
V
Machine Model (MM)
Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
TPS40200
VDD, ISNS
Input voltage range
Output voltage range
Tstg
UNIT
52
RC, FB
–0.3 to 5.5
SS
–0.3 to 9.0
COMP
–0.3 to 9.0
GDRV
(VIN – 10) to VIN
Storage temperature range
Lead temperature 1,6 mm (1/16 in) from case for 10 s
V
V
–55 to 150
°C
260
°C
Recommended Operating Conditions
MIN
MAX
UNIT
VDD
Input voltage
4.5
52
V
TA
Operating temperature
–40
125
°C
TYP
UNIT
49
°C/W
Thermal Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
θJC
(1)
2
Thermal resistance, junction to case
(1)
TI uses test boards designed to JESD 51-3 and JESD 51-7 for thermal-impedance measurements. The parameters outlined in these
standards are also used to set up thermal models. TI uses the thermal-model program ThermCAL, a finite-difference thermal-modeling
tool. Using this test procedure, the junction-to-case thermal resistance of this part is 49°C/W.
Copyright © 2006–2011, Texas Instruments Incorporated
TPS40200-Q1
SLUS739D – SEPTEMBER 2006 – REVISED JULY 2011
www.ti.com
Electrical Characteristics
–40°C < TA < 125°C, VDD = 12 V, fOSC = 100 kHz (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Voltage Reference
COMP = FB, TA = 25°C
VFB
Feedback voltage
4.5 V < VDD < 52 V
689
696
702
TA = 25°C
686
696
703
–40°C < TA < 125°C
676
696
712
mV
Gate Driver
Isrc
Gate driver pullup current
125
300
mA
Isnk
Gate driver pulldown current
200
300
mA
VGATE
Gate driver output voltage
5.6
8
10
V
1.5
3.0
mA
4.25
4.55
V
VGATE = (VDD – VGDRV), 12 V < VDD < 52 V
Quiescent Current
Iqq
Device quiescent current
fOSC = 300 kHz, Driver not switching,
4.5 V < VDD < 52 V
Undervoltage Lockout (UVLO)
VUVLO(on)
Turn-on threshold
VUVLO(off)
Turn-off threshold
–40°C < TA < 125°C
3.8
4.05
VUVLO(HYST) Hysteresis
V
110
200
275
mV
65
105
170
kΩ
Soft Start
RSS(chg)
Internal soft-start pullup
resistance
RSS(dchg)
Internal soft-start pulldown
resistance
190
305
485
kΩ
VSSRST
Soft-start reset threshold
100
150
200
mV
50
100
140
mV
2
%
200
mV
Overcurrent Protection
VILIM
Overcurrent threshold
OCDF
Overcurrent duty cycle
VILIM(rst)
Overcurrent reset threshold
4.5 V < VDD < 52 V
–40°C < TA < 125°C
Note 1
100
150
Oscillator
Oscillator frequency range
fOSC
Oscillator frequency
Frequency line regulation
VRMP
Ramp amplitude
Note
35
RRC = 200 kΩ, CRC = 470 pF
85
100
500
118
RRC = 68.1 kΩ, CRC = 470 pF
210
300
345
12 V < VDD < 52 V
-9
0
4.5 V < VDD < 12 V
–21
0
4.5 V < VDD < 52 V
VDD/10
kHz
%
V
Pulse-Width Modulator
tMIN
Minimum controllable
pulse width
DMAX
Maximum duty cycle
KPWM
Modulator and power-stage
dc gain
VDD = 12 V
200
540
VDD = 30 V
100
200
ns
Fosc = 100 kHz, CL = 470 pF
93
95
Fosc = 300 kHz, CL = 470 pF
90
93
8
10
12
V/V
100
250
nA
%
Error Amplifier
IIB
Input bias current
AOL
Open loop gain
Note
60
80
dB
GBWP
Unity gain bandwidth
Note
1.5
3
MHz
ICOMP(src)
Output source current
VFB = 0.6 V, COMP = 1 V
100
250
μA
ICOMP(snk)
Output sink current
VFB = 1.2 V, COMP = 1 V
1.0
2.5
mA
Copyright © 2006–2011, Texas Instruments Incorporated
3
TPS40200-Q1
SLUS739D – SEPTEMBER 2006 – REVISED JULY 2011
www.ti.com
DEVICE INFORMATION
TPS40200
COMP 3
FB 4
–
E/A and SS
Reference
8 VDD
SS 2
+
GDRV voltage
swing limited
to (VIN – 8 V)
+ 700 mV
Soft-Start
and
Overcurrent
PWM
Logic
ISNS 7
Driver
6 GDRV
Enable E/A
5 GND
OSC
RC 1
UVLO
Figure 3. Functional Block Diagram
D PACKAGE
(TOP VIEW)
RC
SS
COMP
FB
1
8
2
7
3
6
4
5
VDD
ISNS
GDRV
GND
Figure 4. Device Pinout
TERMINAL FUNCTIONS
TERMINAL
NAME
NO.
I/O
DESCRIPTION
RC
1
I
Switching frequency setting RC network. Connect capacitor from RC pin to GND pin and resistor from VIN
pin to RC pin. The device may be synchronized to an external clock by connecting an open-drain output to
this pin and pulling it to GND. The pulse width for synchronization should not be excessive (see General
Information).
SS
2
I
Soft-start programming. Connect capacitor from SS to GND to program soft start time. Pulling this pin below
150 mV causes the output switching to stop, placing the device in a shutdown state. The pin also functions
as a restart timer for overcurrent events.
COMP
3
O
Error amplifier output. Connect control loop compensation network from COMP to FB.
FB
4
I
Error amplifier inverting input. Connect feedback resistor network center tap to this pin.
GND
5
GDRV
6
O
Driver output for external P-channel MOSFET
ISNS
7
I
Current-sense comparator input. Connect a current sense resistor between ISNS and VDD in order to set
desired overcurrent threshold.
VDD
8
I
System input voltage. Connect local bypass capacitor from VDD to GND.
4
Device ground
Copyright © 2006–2011, Texas Instruments Incorporated
TPS40200-Q1
SLUS739D – SEPTEMBER 2006 – REVISED JULY 2011
www.ti.com
TYPICAL CHARACTERISTICS
QUIESCENT CURRENT
vs
TEMPERATURE
QUIESCENT CURRENT
vs
VDD
3
1.66
1.65
2.5
1.64
2
1.62
IDD - mA
IDD - mA
1.63
1.61
1.6
1.5
1
1.59
1.58
VDD = 12 V
0.5
1.57
1.56
-50
0
-25
0
25
50
75
100
5
125
10
15
20
25
30 35
VDD - V
40
45
50
Figure 5.
Figure 6.
SOFT-START THRESHOLD
vs
TEMPERATURE
UVLO TURN ON AND TURN OFF
vs
TEMPERATURE
156.5
4.3
156
4.25
UVLO Turn On - V
Reset Threshold - mV
Temp - °C
155.5
155
154.5
154
VDD = 12 V
153.5
-50
-25
55
Turn On
4.2
4.15
4.1
Turn Off
4.05
4
0
25
50
75
Temp - °C
Figure 7.
Copyright © 2006–2011, Texas Instruments Incorporated
100
125
-50
-25
0
25
50
Temp - °C
75
100
125
Figure 8.
5
TPS40200-Q1
SLUS739D – SEPTEMBER 2006 – REVISED JULY 2011
www.ti.com
TYPICAL CHARACTERISTICS (continued)
OSCILLATOR FREQUENCY
vs
TEMPERATURE
CURRENT-LIMIT THRESHOLD
vs
TEMPERATURE
103
98
96
102.5
VDD = 4.5 V
102
R = 202 kW
C = 470 pF
92
ILIM threshold - mV
Frequency (kHz)
94
90
88
VDD = 12 V
86
84
80
-50
-25
0
25
50
75
100
101
VDD = 12 V
100.5
100
VDD = 52 V
82
101.5
99.5
-50
125
-25
0
Temp (°C)
50
75
100
125
Temp - °C
Figure 9.
Figure 10.
OSCILLATOR FREQUENCY
vs
VDD
POWER-STAGE GAIN
vs
VDD
275
21.00
R = 68.1 kW
C = 470 pF
TJ = 25°C
270
265
TJ = 25°C
20.50
260
255
Gain - dB
Oscillator Frequency (kHz)
25
250
245
20.00
240
235
19.50
230
225
220
19.00
5
10
15
20
25
30
35
VDD (V)
Figure 11.
6
40
45
50
55
5
10
15
20
25
30 35
VDD - V
40
45
50
55
Figure 12.
Copyright © 2006–2011, Texas Instruments Incorporated
TPS40200-Q1
SLUS739D – SEPTEMBER 2006 – REVISED JULY 2011
www.ti.com
TYPICAL CHARACTERISTICS (continued)
POWER-STAGE GAIN
vs
TEMPERATURE
POWER-STAGE GAIN
vs
TEMPERATURE
20.50
20.50
20.30
20.45
VDD = 24 V
VDD = 4.5 V
20.40
VDD = 12 V
19.90
Gain - dB
Gain - dB
20.10
19.70
20.35
VDD = 52 V
20.30
19.50
20.25
-50
-25
0
25
50
75
100
125
-50
-25
0
Temp - °C
MODULATOR RAMP AMPLITUDE
vs
TEMPERATURE
MODULATOR RAMP AMPLITUDE
vs
TEMPERATURE
VDD = 24 V
Vramp - V
2.2
Vramp - V
100
Figure 14.
2.6
2
1.8
1.6
VDD = 12 V
1.2
1
-50
75
Figure 13.
3
1.4
50
-25
0
25
50
125
Temp °C
2.8
2.4
25
75
Temp - °C
Figure 15.
Copyright © 2006–2011, Texas Instruments Incorporated
100
125
6
5.8
5.6
5.4
5.2
5
4.8
4.6
4.4
4.2
4
3.8
3.6
3.4
3.2
3
VDD = 52 V
VDD = 36 V
-50
-25
0
25
50
75
100
125
Temp - °C
Figure 16.
7
TPS40200-Q1
SLUS739D – SEPTEMBER 2006 – REVISED JULY 2011
www.ti.com
TYPICAL CHARACTERISTICS (continued)
MODULATOR RAMP AMPLITUDE
vs
VDD
FEEDBACK AMPLIFIER INPUT BIAS CURRENT
vs
TEMPERATURE
160
6
TJ = 25°C
140
5
120
4
IIB - nA
VRAMP - V
100
3
80
60
2
40
1
20
0
0
5
10
15
20
25
30
35
VDD - V
40
45
50
55
-50
25
50
75
Figure 17.
Figure 18.
COMP SOURCE CURRENT
vs
TEMPERATURE
COMP SINK CURRENT
vs
TEMPERATURE
100
125
100
125
3.5
3
Output Current - mA
250
Output Current - mA
0
Temp - °C
300
200
150
100
50
2.5
2
1.5
1
0.5
0
0
-50
-25
0
25
50
Temp - °C
Figure 19.
8
-25
75
100
125
-50
-25
0
25
50
75
Temp - °C
Figure 20.
Copyright © 2006–2011, Texas Instruments Incorporated
TPS40200-Q1
SLUS739D – SEPTEMBER 2006 – REVISED JULY 2011
www.ti.com
TYPICAL CHARACTERISTICS (continued)
GATE DRIVE VOLTAGE
vs
TEMPERATURE
GATE DRIVE VOLTAGE
vs
VIN
8.4
8
VDD = 12 V
7.8
7.6
VGATE - V
VJ = 25°C
8.2
8
7.4
7.8
7.2
7.6
7
7.4
6.8
7.2
6.6
7
6.4
Temp - °C
30 35
VDD - V
Figure 21.
Figure 22.
REFERENCE VOLTAGE
vs
TEMPERATURE
REFERENCE VOLTAGE
vs
TEMPERATURE
-25
0
25
50
75
100
5
125
720
720
718
718
716
716
714
714
712
VFB - mV
VFB - mV
-50
VDD = 24 V
710
708
706
10
15
20
25
40
45
50
55
712
710
VDD = 4.5 V
708
706
VDD = 50 V
704
704
702
702
700
VDD = 12 V
700
-50
-25
0
25
50
75
Temp - °C
Figure 23.
Copyright © 2006–2011, Texas Instruments Incorporated
100
125
-50
-25
0
25
50
75
100
125
Temp - °C
Figure 24.
9
TPS40200-Q1
SLUS739D – SEPTEMBER 2006 – REVISED JULY 2011
www.ti.com
TYPICAL CHARACTERISTICS (continued)
MINIMUM CONTROLLABLE PULSE WIDTH
vs
FREQUENCY
MAXIMUM DUTY CYCLE
vs
INPUT VOLTAGE
700
100
600
95
Maximum Duty Cycle (%)
VDD = 4.5 V
Pulse Width - ns
500
400
300
VDD = 24 V
VDD = 12 V
200
100 VDD = 36 V
200
300
Frequency - kHz
Figure 25.
10
80
75
fOSC (kHz)
500
200
100
50
70
60
0
100
85
65
VDD = 52 V
0
90
400
500
0
10
20
30
40
50
Input Voltage (V)
Figure 26.
Copyright © 2006–2011, Texas Instruments Incorporated
TPS40200-Q1
SLUS739D – SEPTEMBER 2006 – REVISED JULY 2011
www.ti.com
GENERAL INFORMATION
Overview
The TPS40200 is a nonsynchronous controller with a built-in 200-mA driver designed to drive high-speed
P-channel FETs up to 500 kHz. Its small size combined with complete functionality makes the part both versatile
and easy to use.
The controller uses a low-value current-sensing resistor in series with the input voltage and the power FET’s
source connection to detect switching current. When the voltage drop across this resistor exceeds 100 mV, the
part enters a hiccup fault mode at approximately 2% of the operating frequency.
The part uses voltage feedback to an error amplifier that is biased by a precision 700-mV reference.
Feed-forward compensation from the input keeps the PWM gain constant over the full input voltage range,
eliminating the need to change frequency compensation for different input voltages.
The part also incorporates a soft-start feature, during which the output follows a slowly rising soft-start voltage,
preventing output-voltage overshoot.
Programming the Operating Frequency
The operating frequency of the controller is determined by an external resistor RRC that is connected from the RC
pin to VDD and a capacitor attached from the RC pin to ground. This connection and the two oscillator
comparators inside the IC are shown in Figure 27. The oscillator frequency can be calculated from the following
equation:
f SW =
1
R RC ´ C RC ´ 0.105
Where:
fSW = clock frequency
RRC = timing resistor value in Ω
CRC = timing capacitor value in F
RRC must be kept large enough that the current through it does not exceed 750 μA when the internal switch
(shown in Figure 27) is discharging the timing capacitor. This condition may be expressed by Equation 1:
VIN
£ 750 mA
R RC
(1)
Synchronizing the Oscillator
Figure 27 shows the functional diagram of the TPS40200 oscillator. When synchronizing the oscillator to an
external clock, the RC pin must be pulled below 150 mV for 20 ns or more. The external clock frequency must be
higher than the free-running frequency of the converter as well. When synchronizing the controller, if the RC pin
is held low for an excessive amount of time, erratic operation may occur. The maximum amount of time that the
RC pin should be held low is 50% of a nominal output pulse, or 10% of the period of the synchronization
frequency.
Under circumstances where the input voltage is high and the duty cycle is less than 50%, a Schottky diode
connected from the RC pin to an external clock may be used to synchronize the oscillator. The cathode of the
diode is connected to the RC pin. The trip point of the oscillator is set by an internal voltage divider to be 1/10 of
the input voltage. The clock signal must have an amplitude higher than this trip point. When the clock goes low, it
allows the reset current to restart the RC ramp, synchronizing the oscillator to the external clock. This provides a
simple, single-component method for clock synchronization.
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11
TPS40200-Q1
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VDD
VIN
8
TPS40200
+
CLK
RRC
S
Q
RC
RC
R Q
1
Ext. Frequency
Synchronization
(optional)
+
CRC
+
GND
150mV
5
Figure 27. Oscillator Functional Diagram
VDD
VIN
Amplitde > VIN ¸ 10
Duty cycle < 50%
8
TPS40200
+
CLK
RRC
S
Q
RC
RC
R Q
1
Frequency > Controller
Frequency
+
CRC
+
GND
150mV
5
Figure 28. Diode Connected Synchronization
12
Copyright © 2006–2011, Texas Instruments Incorporated
TPS40200-Q1
SLUS739D – SEPTEMBER 2006 – REVISED JULY 2011
www.ti.com
Current-Limit Resistor Selection
As shown in Figure 31, a resistor in series with the power MOSFET sets the overcurrent protection level. Use a
low-inductance resistor to avoid problems with ringing signals and nuisance tripping. When the FET is on and the
controller senses 100 mV or more drop from the VDD pin to the ISNS pin, an overcurrent condition is declared.
When this happens, the FET is turned off and, as shown in Figure 30, the soft-start capacitor is discharged.
When the soft-start capacitor reaches a level below 150 mV, the converter clears the overcurrent condition flag
and attempts to restart. If the condition that caused the overcurrent event to occur is still present on the output of
the converter (see Figure 29), another overcurrent condition is declared and the process repeats indefinitely.
Figure 29 shows the soft-start capacitor voltage during an extended output fault condition. The overall duty cycle
of current conduction during a persistent fault is approximately 2%.
Figure 29. Typical Soft-Start Capacitor and VOUT During Overcurrent
VS-S
TPS40200
VIN
8
+ 100 mV
100 kW
+
ISNS
Fault
7
S Q
R Q
SS
2
+
Reset
Fault
Latched
Fault
300
kW
+ 300 mV
EAMP
SS Ref
Enable
EAMP
+ 150 mV
GND
5
Figure 30. Current-Limit Reset
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If necessary, a small R-C filter can be added to the current sensing network to reduce nuisance tripping due to
noise pickup. This filter can also be used to trim the overcurrent trip point to a higher level with the addition of a
single resistor (see Figure 31). The nominal overcurrent trip point using the circuit of Figure 31 is described as:
IOC =
VILIM R F1 + R F2
´
R ILIM
R F2
Where:
IOC = overcurrent trip point, peak current in the inductor
VILIM = overcurrent threshold voltage for the TPS40200,
typically 100 mV
RILIM = value of the current sense resistor in Ω
RF1 and RF2 = values of the scaling resistors in Ω
The value of the capacitor is determined by the nominal pulse width of the converter and the values of the
scaling resistors RF1 and RF2. It is best not to have the time constant of the filter longer than the nominal pulse
width of the converter, otherwise a substantial increase in the overcurrent trip point occurs. Using this constraint,
the capacitor value may be bounded by the following:
Cf £
VO
R ´ R f2
÷ f1
R
VIN ´ f SW
f1 + R f2
Where:
Cf = value of the current limit filter capacitor in F
VO = output voltage of the converter
VIN = input voltage to the converter
fSW = converter switching frequency
Rf1 and Rf2 = values of the scaling resistors in Ω
VIN
RILIM
RF1
TPS40200
VDD 8
CF
RF2
ISNS 7
GDRV 6
NOTE: The current-limit resistor and its associated circuitry can be eliminated, and pins 7 and 8 shorted. However, the result
of this may result in damage to the part or PCB in the event of an overcurrent event.
Figure 31. Current-Limit Adjustment
14
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TPS40200-Q1
SLUS739D – SEPTEMBER 2006 – REVISED JULY 2011
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MOSFET Gate Drive
The output driver sinking current is approximately 200 mA and is designed to drive P-channel power FETs. When
the driver pulls the gate charge of the FET it is controlling to –8 V, the drive current folds back to a low level so
that high power dissipation only occurs during the turn-on period of the FET. This feature is particularly valuable
when turning on a FET at high input voltages, where leaving the gate drive current on would otherwise cause
unacceptable power dissipation.
Undervoltage Lockout (UVLO) Protection
UVLO protection ensures proper start-up of the device only when the input voltage has exceeded minimum
operating voltage. Undervoltage protection incorporates hysteresis that eliminates hiccup starting in cases where
input supply impedance is high.
VDD
8
TPS40200
545k
+
RUN
200K
+
1.3V
36K
GND
5
Figure 32. Undervoltage Lockout
Undervoltage protection ensures proper start-up of the device only when the input voltage has exceeded
minimum operating voltage. The UVLO level is measured at the VDD pin with respect to GND. Start-up voltage is
typically 4.3 V with approximately 200 mV of hysteresis. The part shuts off at a nominal 4.1 V. As shown in
Figure 32, when the input VDD voltage rises to 4.3 V, the 1.3-V comparator threshold voltage is exceeded and a
RUN signal occurs. Feedback from the output closes the switch and shunts the 200-kΩ resistor, so that an
approximately 200-mV lower voltage, or 4.1 V, is required before the part shuts down.
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Programming the Soft-Start Time
An external capacitor (CSS) connected from the SS pin to ground controls the TPS40200 soft-start interval. An
internal charging resistor connected to VDD produces a rising reference voltage that is connected through a
700-mV offset to the reference input of the TPS40200 error amplifier. When the soft-start capacitor voltage
(VCSS) is below 150 mV, there is no switching activity. When VCSS rises above the 700-mV offset, the error
amplifier starts to follow VSST – 700 mV and uses this rising voltage as a reference. When VCSS reaches 1.4 V,
the internal reference takes over, and further increases have no effect. An advantage of initiating a slow start in
this fashion is that the controller cannot overshoot, because its output follows a scaled version of the controller's
reference voltage. A conceptual drawing of the circuit that produces these results is shown in Figure 33. A
consequence of the 700-mV offset is that the controller does not start switching until the VCSS has charged up to
700 mV. The output remains at 0 V during the resulting delay. When VCCS exceeds the 700-mV offset, the
TPS40200 output follows the soft-start time constant. Once above 1.4 V, the 700-mV internal reference takes
over, and normal operation begins.
TPS40200
VSST
105 kW
2
+
Css
Ideal
Diodes
Error Amplifier
+
700 mV
VSST (offset)
SS
+
FB
4
700 mV
COMP
3
Figure 33. Soft-Start Circuit
The slow-start time should be longer (slower) than the time constant of the output LC filter. This time constraint
may be expressed as:
t S ³ 2p ´ L O ´ C O
(2)
The calculation of the soft-start interval is simply the time it takes the RC network to exponentially charge from
0 V to 1.4 V. An internal 105-kΩ charging resistor is connected from the SS pin to VSST. For applications where
the voltage is above 8 V, an internal regulator clamps the maximum charging voltage to 8 V.
The result of this is a formula for the start up time, as given by:
ö
æ VSST
÷
t SS = R c ´ CSS ´ ln çç
÷
è VSST - 1.4 ø
16
Where:
tSS = required soft-start time in seconds
CSS = soft-start capacitor value in F
Rc = internal soft-start charging resistor (105 kΩ nominal)
VSST = input voltage up to a maximum of 8 V
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Voltage Setting and Modulator Gain
Because the input current to the error amplifier is negligible, the feedback impedance can be selected over a
wide range. Knowing that the reference voltage is 708 mV, pick a convenient value for R1 and then calculate the
value of R2 from the following formula:
æ
R ö
VOUT = 0.708çç1 + 2 ÷÷
R
1ø
è
(3)
Vg
L
KPWM
VOUT
d
Cout
Vc
Rload
R2
+
Vref
R1
Figure 34. System Gain Elements
The error amplifier has a dc open-loop gain of at least 60 dB with a minimum of a 1.5-MHz gain bandwidth
product, which gives the user flexibility with respect to the type of feedback compensation used for the particular
application. The gain selected by the user at the crossover frequency is set to provide an overall unity gain for
the system. The crossover frequency should be selected so that the error amplifier's open-loop gain is high with
respect to the required closed-loop gain. This ensures that the amplifier's response is determined by the passive
feedback elements.
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EXAMPLE APPLICATIONS
Application 1: Buck Regulator, 8-V to 12-V Input, 3.3-V or 5-V Output at 2.5 A
Overview
The buck regulator design shown in Figure 35 shows the use of the TPS40200. It delivers 2.5 A at either 3.3 V or
5 V as selected by a single feedback resistor. It achieves approximately 90% efficiency at 3.3 V and 94% at 5 V.
A discussion of design tradeoffs and methodology is included to serve as a guide to the successful design of
forward converters using the TPS40200.
The bill of materials for this application is given in Table 3. The efficiency from boards built from this design is
shown in Figure 36 and Figure 37. Gerber files and additional application information are available.
+
+
Notes
D3 : Do not populate. SOT 23 Common Cathode Dual Schottky
R6 =26.7k for 3.3 Vout, R6 = 16.2k for 5.0 Vout
Figure 35. 8-V to 16-V VIN Step-Down Buck Converter
100
100
VIN = 8 V
VIN = 12 V
VIN = 16 V
90
80
Efficiency - %
Efficiency - %
90
70
60
VIN = 8 V
VIN = 12 V
VIN = 16 V
80
70
60
VOUT = 5 V
VOUT = 3.3 V
50
0
0.5
1
1.5
2
Load Current - A
2.5
3
Figure 36. Full-Load Efficiency at 5-V VOUT
18
50
0
0.5
1
1.5
2
Load Current - A
2.5
3
Figure 37. Full-Load Efficiency at 3.3-V VOUT
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Component Selection
Table 2. Design Parameters
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
NOM
MAX
UNIT
VIN
Input voltage
8.0
12
16.0
V
VOUT
Output voltage
IOUT at 2.5 A
3.200
3.3
3.400 (1)
V
Line regulation
~0.2 % VOUT
3.293
3.3
3.307
V
Load regulation
~0.2% VOUT
3.293
3.3
3.307
V
Output voltage
IOUT at 2.5 A
4.85
5.0
5.150 (1)
V
Line regulation
~0.2% VOUT
4.990
5.0
5.010
V
4.990
5.0
5.010
VOUT
Load regulation
~0.2% VOUT
VRIPPLE
Output ripple voltage
At maximum output current
VOVER
Output overshoot
VUNDER
Output undershoot
IOUT
Output current
ISCP
Short-circuit current trip point
FS
(1)
mV
For 2.5-A load transient from 2.5 A to 0.25 A
100
mV
For 2.5-A load transient from 0.25 A to 2.5 A
60
mV
At nominal input voltage and maximum output
current
Efficiency
V
60
Switching frequency
0.125
2.5
A
3.75
5.00
A
90
%
300
kHz
Set-point accuracy is dependent on external resistor tolerance and the IC reference voltage. Line and load regulation values are
referenced to the nominal design output voltage.
FET Selection Criteria
1. The maximum input voltage for this application is 16 V. Switching the inductor causes overshoot voltages
that can equal the input voltage. Because the RDSON of the FET rises with breakdown voltage, select a FET
with the lowest breakdown voltage possible. In this case, a 30-V FET was selected.
2. The selection of a power FET’s size requires knowing both the switching losses and dc losses in the
application. AC losses are all frequency dependent and directly related to device capacitances and device
size. On the other hand, dc losses are inversely related to device size. The result is an optimum where the
two types of losses are equal. Because device size is proportional to RDSON, a starting point is to select a
device with an RDSON that results in a small loss of power relative to package thermal capability and overall
efficiency objectives.
3. In this application, the efficiency target is 90% and the output power 8.25 W. This gives a total power-loss
budget of 0.916 W. Total FET losses must be small relative to this number.
The dc conduction loss in the FET is given by:
PDC = Irms 2 × RDSON
The RMS current is given by:
1
2
é æ
DIpp ö÷ù 2
2
ú
Irms = êD ´ ç IOUT +
ê ç
12 ÷ú
è
ø
ë
û
Copyright © 2006–2011, Texas Instruments Incorporated
Where:
ΔIpp = ΔV × D × (ts/LI)
ΔV = VIN – VOUT – (DCR + RDSON) × IOUT
RDSON = FET on-state resistance
DCR = inductor dc resistance
D = duty cycle
tS = reciprocal of the switching frequency
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Using the values in this example, the dc power loss is 129 mW. The remaining FET losses are:
• PSW – The power dissipated while switching the FET on and off
• Pgate – The power dissipated driving the FET's gate capacitance
• PCOSS – The power switching the FET's output capacitance
The total power dissipated by the FET is the sum of these contributions:
PFET = PSW + Pgate + PCOSS + PRDSON
The P-channel FET used in this application is a FDC654P with the following characteristics:
trise = 13 × 10–9
COSS = 83 × 10–12
tfall = 6 × 10–9
Qg = 9 nC
RDSON = 0.1 Ω
Vgate = 1.9 V
–9
Qgs = 1.0 × 10–9
Qgd = 1.2 × 10
Using these device characteristics and the following formulas, PSW is calculated as:
æ
ö f
f
PSW = S ´ çç VIN ´ Ipk ´ t CHON ÷÷ + S VIN ´ Ipk ´ t CHOFF
= 10 mW
2 è
ø 2
(
t CHON =
)
(4)
Q ´ RG
Q GD ´ R G
t CHOFF = GD
VIN - VTH and
VIN
are the switching times for the power FET.
Where
PGATE = Q G × VGATE × f S = 22 mW
(5)
2
PCOSS =
C OSS × VIN _ MAX × f S
2
= 2 mW
(6)
IG = QG × fS = 2.7 mA is the gate current.
The sum of the switching losses is 34 mW and is comparable to the 129-mW dc losses. At added expense, a
slightly larger FET would be better, because the dc loss would drop and the ac losses would increase, with both
moving toward the optimum point of equal losses.
20
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Rectifier Selection Criteria
• Rectifier breakdown voltage
The rectifier must withstand the maximum input voltage, which, in this case, is 16 V. To allow for switching
transients that can approach the switching voltage, a 30-V rectifier was selected.
• Diode size
The importance of power losses from the Schottky rectifier (D2) is determined by the duty cycle. For a low
duty-cycle application, the rectifier is conducting most of the time, and the current that flows through it times
its forward drop can be the largest component of loss in the entire controller. In this application, the duty cycle
ranges from 20% to 40%, which, in the worst case, means that the diode is conducting 80% of the time.
Where efficiency is of paramount importance, choose a diode with as low a forward drop as possible. In more
cost-sensitive applications, size may be reduced to the point of the thermal limitations of the diode package.
The device in this application is large relative to the current required by the application. In a more
cost-sensitive application, a smaller diode in a less-expensive package could provide a less-efficient but
appropriate solution.
The device used has the following characteristics:
• Vf = 0.3 V at 3 A
• Ct = 300 pF (Ct = effective reverse voltage capacitance of the synchronous rectifier, D2)
The two components of the losses from the diode D2 are:
(
PCOND = Vf × IOUT +
(
IRIPPLE
× (1 – D) = 653 mW
4
Where:
D = the duty cycle
IRIPPLE = ripple current
IOUT = output current
VF = forward voltage
PCOND = conduction power loss
The switching capacitance of this diode adds an ac loss, given by Equation 7:
1
2
PSW =
C × (VIN + Vf ) × f = 6.8 mW
2
(7)
This additional loss raises the total loss to 660 mW.
At an output voltage of 3.3 V, the application runs at a nominal duty cycle of 27%, and the diode is conducting
72.5% of the time. As the output voltage is moved up to 5 V, the on time increases to 46%, and the diode is
conducting only 54% of the time during each clock cycle. This change in duty cycle proportionately reduces
the conduction power losses in the diode. This reduction may be expressed as 660(0.54/0.725) = 491 mW,
for a savings in power of 660 – 491 = 169 mW.
To illustrate the relevance of this power savings, measure the full-load module efficiency for this application at
3.3 V and 5 V. The 5-V output efficiency is 92%, compared to 89% for the 3.3-V design. This difference in
efficiency represents a 456-mW reduction in losses between the two conditions. This 169-mW power-loss
reduction in the rectifier represents 37% of the difference.
[
]
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Inductor Selection Criteria
The TPS40200 P-FET driver facilitates switching the power FET at a high frequency. This, in turn, enables the
use of smaller less-expensive inductors as illustrated in this 300-kHz application. Ferrite, with its good
high-frequency properties, is the material of choice. Several manufacturers provide catalogs with inductor
saturation currents, inductance values, and LSRs (internal resistance) for their various-sized ferrites.
In this application, the part must deliver a maximum current of 2.5 A. This requires that the output inductor’s
saturation current be above 2.5 A plus one-half the ripple current caused during inductor switching. The value of
the inductor determines this ripple current. A low value of inductance has a higher ripple current that contributes
to ripple voltage across the resistance of the output capacitors. The advantages of a low inductance are a higher
transient response, lower DCR, a higher saturation current, and a smaller less-expensive part. Too low an
inductor, however, leads to higher peak currents, which ultimately are bounded by the overcurrent limit set to
protect the output FET or by output ripple voltage. Fortunately, with low-ESR ceramic capacitors on the output,
the resulting ripple voltage for relatively high ripple currents can be small.
For example, a single 1-μF 1206-sized 6.3-V ceramic capacitor has an internal resistance of 2 Ω at 1 MHz. For
this 2.5-A application, a 10% ripple current of 0.25 A produces a 50-mV ripple voltage. This ripple voltage may be
further reduced by additional parallel capacitors.
The other bound on inductance is the minimum current at which the controller enters discontinuous conduction.
At this point, inductor current is zero. The minimum output current for this application is specified at 0.125 A. This
average current is one-half the peak current that must develop during a minimum on time. The conditions for
minimum on time are high line and low load.
LMAX is calculated using:
LMAX =
VIN − VOUT
× t ON = 32 µH
IPEAK
Where:
VIN = 16 V
VOUT = 3.3 V
IPEAK = 0.25 A
tON = 0.686 μs
tON
3. 3 V
1
´
is given by 300 kHz 16 V
The inductor used in the circuit is the closest standard value of 33 μH. This is the maximum inductance that can
be used in the converter to deliver the minimum current while maintaining continuous conduction.
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Output Capacitance
In order to satisfy the output voltage overshoot and undershoot specifications, there must be enough output
capacitance to keep the output voltage within the specified voltage limits during load current steps.
In a situation where a full load of 2.5 A within the specified voltage limits is suddenly removed, the output
capacitor must absorb energy stored in the output inductor. This condition may be described by realizing that the
energy in the stored in the inductor must be suddenly absorbed by the output capacitance. This energy
relationship is written as:
1
1
2
2
2
´ L OIO £ ´ C O VOS - VO
2
2
[ (
)]
Where:
VOS = allowed over-shoot voltage above the output voltage
LO = inductance
IO = output current
CO = output capacitance
VO = output voltage
In this application, the worst-case load step is 2.25 A, and the allowed overshoot is 100 mV. With a 33-μH output
inductor, this implies an output capacitance of 249 μF for a 3.3-V output and 165 μF for a 5-V output.
When the load increases from minimum to full load, the output capacitor must deliver current to the load. The
worst case is for a minimum on time that occurs at 16 V in, 3.3 V out, and minimum load. This corresponds to an
off time of (1 – 0.2) times the period 3.3 μs and is the worst-case time before the inductor can start supplying
current. This situation may be represented by:
DVO < DIO ´
t OFFMAX
CO
Where:
ΔVO = undershoot specification of 60 mV
ΔIO = load current step
tOFFMAX = maximum off time
This condition produces a requirement of 100 μF for the output capacitance. The larger of these two
requirements becomes the minimum value of output capacitance.
The ripple current develops a voltage across the ESR of the output capacitance, so another requirement on this
component is that its ESR be small relative to the ripple voltage specification.
Switching Frequency
The TPS40200 has a built-in 8-V 200-mA P-channel FET-driver output that facilitates using P-channel switching
FETs. A clock frequency of 300 kHz was chosen as a switching frequency that represents a compromise
between a high frequency that allows the use of smaller capacitors and inductors, but one that is not so high as
to cause excessive transistor switching losses. As previously discussed, an optimum frequency can be selected
by picking a value where the dc and switching losses are equal.
The frequency is set by using the design formula given in the FET Selection Criteria section.
RRC ´ CRC =
1
0.105 ´ fSW
Where:
RRC = timing resistor value in ohms or RRC = 68.1 kΩ
CRC = timing capacitor value in F or C5 = 470 pF
fSW = desired switching frequency in Hz, which in this case
calculates to 297 kHz
At a worst case of 16 V, the timing resistor draws about 250 μA, which is well below the 750-μA maximum that
the circuit can pull down.
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Programming the Overcurrent Threshold Level
The current limit in the TSP40200 is triggered by a comparator with a 100-mV offset whose inputs are connected
across a current-sense resistor between VCC and the source of the high-side switching FET. When current in this
resistor develops more than 100 mV, the comparator trips and terminates the output gate drive.
In this application, the current-limit resistor is set by the peak output stage current, which consists of the
maximum load current plus one-half the ripple current. In this case, 2.5 + 0.125 = 2.625 A. To accommodate
tolerances, a 25% margin is added, giving a 3.25-A peak current. Using the equation in Figure 38 yields a value
for RILIM of 0.30 Ω.
Current sensing in a switching environment requires attention to both circuit board traces and noise pickup. In the
design shown, a small RC filter has been added to the circuit to prevent switching noise from tripping the
current-sense comparator. The requirements of this filter are board dependent but, with the layout used in this
application, no spurious overcurrent was observed.
VIN
RILIM
RF1
TPS40200
VDD
8
CF
RF2
ISNS 7
GDRV 6
ILIM =
0. 1
R ILIM
Figure 38. Overcurrent Trip Circuit for RF2 Open
24
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Soft-Start Capacitor
The soft-start interval is given (in pF) by:
C SS =
t SS
æ VSST ö
÷
R ´ ln çç
÷
è VSST - 1.4 ø
´ 10 3
Where:
R = internal 105-kΩ charging resistor
VCC = input voltage up to 8 V, where the charging voltage is
internally clamped to 8 V maximum
VOS = 700 mV, and (because the input voltage is 12 V)
VSST = 8 V
The oscilloscope picture (see Figure 39) shows the expected delay at the output (middle trace) until the soft-start
node (bottom trace) reaches 700 mV. At this point, the output rises following the exponential rise of the soft-start
capacitor voltage until the soft-start capacitor reaches 1.4 V and the internal 700-mV reference takes over. This
total time is approximately 1 ms, which agrees with the calculated value of 0.95 ms when the soft-start
capacitance is 0.047 μF.
A.
Channel 1 is the output voltage rising to 3.3 V.
B.
Channel 2 is the soft-start pin.
Figure 39. Soft Start Showing Output Delay and Controlled Rise to Programmed Output Voltage
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Frequency Compensation
The four elements that determine the system overall response are discussed in this section. The gain of the error
amplifier (KEA) is the first of these elements. Its output develops a control voltage that is the input to the PWM.
The TPS40200 has a unique modulator that scales the peak-to-peak amplitude of the PWM ramp to be 0.1 times
the value of the input voltage. Because modulator gain is given by VIN divided by VRAMP, the modulator gain is 10
and is constant at 10 (20 dB) over the entire specified input-voltage range.
The last two elements that affect system gain are the transfer characteristic of the output LC filter and the
feedback network from the output to the input to the error amplifier.
These four elements may be expressed by the following equation that represents the system transfer function as
shown in Figure 40.
TV(S) = KFB × KEA(S) × KPWM × XLC(S)
Where:
KFB = output voltage setting divider
KEA = error amplifier feedback
KPWM = modulator gain
XLC = filter transfer function
vg
Vref
+
KEA
-
vc
KPWM
d
XLC
vo
Tv(s)
KFB
Figure 40. Control Loop
26
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Figure 41 shows the feedback network used in this application. This is a type-2 compensation network, which
gives a combination of good transient response and phase boost for good stability. This type of compensation
has a pole at the origin, causing a –20-dB/decade (–1) slope, followed by a zero that causes a region of flat gain,
followed by a final pole that returns the gain slope to –1. The Bode plot in Figure 42 shows the effect of these
poles and zeros.
The procedure for setting up the compensation network is:
1. Determine the break frequency of the output capacitor.
2. Select a zero frequency well below this break frequency.
3. From the gain bandwidth of the error amplifier, select a crossover frequency at which the amplifier gain is
large relative to expected closed-loop gain.
4. Select a second zero well above the crossover frequency that returns the gain slope to a –1 slope.
5. Calculate the required gain for the amplifier at crossover.
Be prepared to iterate this procedure to optimize the pole and zero locations as needed.
C7
C8
R8
R10
+
R6
VREF
Figure 41. Error Amplifier Feedback Elements
The frequency response of this converter is largely determined by two poles that arise from the LC output filter
and a higher-frequency zero caused by the ESR of the output capacitance. The poles from the output filter cause
a 40-dB/decade rolloff with a phase shift approaching 180°, followed by the output capacitor zero that reduces
the roll off to –20 dB and gives a phase boost back toward 90°. In other nomenclature, this is a –2 slope followed
by a –1 slope. The two zeros in the compensation network act to cancel the double pole from the output filter.
The compensation network’s two poles produce a region in which the error amplifier is flat and can be set to a
gain such that the overall gain of the system is 0 dB. This region is set so that it brackets the system crossover
frequency.
Gain - dB
P1
Error Amplifier Type 2
Compensation
Slope = -1
z1
p2
A V2
f1
A V1
f2
Freq.
Figure 42. Error Amplifier Bode Plot
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In order to properly compensate this system, it is necessary to know the frequencies of its poles and zeros.
Step 1
The break frequency of the output capacitor is given by:
Fesr =
1
2pR esr C
Where:
C = the output capacitor
RESR = the ESR of the capacitors
Because of the ESR of the output capacitor, this output filter has a single-pole response above the 1.8-kHz break
frequency of the output capacitor and its ESR. This simplifies compensation since the system becomes
essentially a single-pole system.
Step 2
The first zero is place well below the 1.8-kHz break frequency of the output capacitor and its ESR. Phase boost
from this zero is shown in Figure 44.
fZ1 =
1
2pR 8C8
Where:
R8 = 300 kΩ
C8 = 1500 pF
FZ1 = 354 Hz
Step 3
From a minimum gain bandwidth product of 1.5 MHz, and knowing it has a 20-dB/decade rolloff, the open-loop
gain of the error amplifier is 33 dB at 35 kHz. This approximate frequency is chosen for a crossover frequency to
keep the amplifier gain contribution to the overall system gain small, as well as following the convention of placng
the crossover frequency between 1/6 to 1/10 the 300 kHz switching frequency.
Step 4
The second pole is placed well above the 35-kHz crossover frequency.
fP2 =
28
1
× (C7 + C8)
2π × C 7 × C 8 × R 8
Where:
R8 = 300 kΩ
C7 = 10 pF
C8 = 1500 pF
fP3 = 53 kHz
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Step 5
Calculate the gain elements in the system to determine the gain required by the error amplifier to make the
overall gain 0 dB at 35 kHz:
TV (S ) = K FB ´ K EA (S)´ K PWM ´ X LC (S)
Where:
KFB is the output voltage setting divider
KEA is the error amplifier feedback
KPWM is the modulator gain
XLC is the filter transfer function
With reference to Figure 43, the output filter's transfer characteristic XLC(S) can be estimated by the following:
L
RSW
VIN
D
VSW
VOUT
1-D
RSR
COUT
RLOAD
Figure 43. Output Filter Analysis
X LC (S) =
Z OUT (S)
Z OUT (S) + Z L (S) + R SW ´ D + R SR ´ (1 - D)
Where:
ZOUT is the parallel combination of output
capacitor(s) and the load
RSW is the RDS(on) of the switching FET plus the
current-sense resistor
RSR is the resistance of the synchronous rectifier
D is the duty cycle estimated as 3.3 / 12 = 0.27
To evaluate XLC(S) at 35 kHz use the following:
• ZOUT(S) at 35 kHz, which is dominated by the output capacitorr's ESR; estimated to be 400 mΩ
• ZL(S) at 35 KHz is 7.25 Ω
• RSW = 0.95 mΩ, including the RLIM resistance
• RSR = 100 mΩ
Using these numbers, XLC(S) = 0.04 or -27.9 dB.
The feedback network has a gain to the error amplifier given by:
K fb =
R 10
R6
Where for 3.3 VOUT, R6 = 26.7 kΩ
Using the values in this application, Kfb = 11.4 dB.
The modulator has a gain of 10 that is flat to well beyond 35 kHz, so KPWM = 20 dB.
To acheive 0 dB overall gain, the amplifier and feedback gain must be set to 7.9 dB (20 dB - 27.9 dB)
The amplifier gain, including the feedback gain, Kfb, can be approximated by this expression:
Copyright © 2006–2011, Texas Instruments Incorporated
29
TPS40200-Q1
SLUS739D – SEPTEMBER 2006 – REVISED JULY 2011
VOUT
(S ) =
VIN
www.ti.com
A VOL
R10 R10
1+
+
´ (1 + A VOL )
R 8 ZFS
Where:
ZFS is the parallel combination of C7 in parallel with
the sum of R8 and the impedance of C8
AVOL is the open-loop gain of the error amplifier at
35 kHz, which is 44.6 or 33 dB
Figure 44 shows the result of the compensation. The crossover frequency is 35 kHz, and the phase margin is
45°. The response of the system is dominated by the ESR of the output capacitor and is exploited to produce an
essentially single-pole system with simple compensation.
50
180
40
160
30
140
20
Gain
100
0
-10
80
Phase
60
-20
40
-30
20
-40
-50
0.1
Phase - Degrees
120
Gain
10
1
10
100
0
1000
Crossover Frequency - kHz
Figure 44. Overall System Gain and Phase Response
Figure 44 also shows the phase boost that gives the system a crossover phase margin of 47°.
The bill of materials for this application is shown in Table 3. Gerber PCB layout files and additional application
information are available from the factory.
30
Copyright © 2006–2011, Texas Instruments Incorporated
TPS40200-Q1
SLUS739D – SEPTEMBER 2006 – REVISED JULY 2011
www.ti.com
Table 3. Bill of Materials, Buck Regulator, 12 V to 3.3 V and 5 V
REF
VALUE
DESCRIPTION
SIZE
MFR
PART NUMBER
C1
100 μF
Capacitor, Aluminum, SM, 25 V, 0.3 Ω
8 mm × 10 mm
C12
220 μF
Capacitor, Aluminum, SM, 6.3 V, 0.4 Ω
8 mm × 6.2 mm Panasonic
EEVFC0J221P
C13
100 pF
Capacitor, Ceramic, 50 V, [COG], [20%]
603
muRata
Std.
C3
0.1 pF
Capacitor, Ceramic, 50 V, [X7R], [20%]
603
muRata
Std.
1 μF
Capacitor, Ceramic, 50 V, [X7R], [20%]
603
muRata
Std.
C2, C11
C4, C5
Sanyo
20SVP100M
470 pF
Capacitor, Ceramic, 50 V, [X7R], [20%]
603
muRata
Std.
C6
0.047 μF
Capacitor, Ceramic, 50 V, [X7R], [20%]
603
muRata
Std.
C7
10 pF
Capacitor, Ceramic, 50 V, [COG], [20%]
603
muRata
Std.
C8
1500 pF
Capacitor, Ceramic, 50 V, [X7R], [20%]
603
muRata
Std.
D1
12 V
Diode, Zener, 12 V, 350 mW
SOT23
Diodes, Inc.
BZX84C12T
Diode, Schottky, 30 A, 30 V
SMC
On Semi
MBRS330T3
D2
D3
Diode Zener, 12 V, 5 mA
VMD2
Rohm
VDZT2R12B
J1,J3
Terminal Block, 4 Pin, 15 A, 5.1 mm
0.8 × 0.35
OST
ED2227
J2
Header, 2 pin, 100-mil spacing (36-pin strip)
0.100 × 2
Sullins
PTC36SAAN
Inductor, SMT, 3.2 A, 0.039 Ω
12.5 × 12.5 mm TDK
SLF12575T330M3R2PF
PCB
2-Layer PCB 2-Ounce Cu
1.4 × 2.12 ×
0.062
HPA164
Q1
Trans, N-Chan Enhancement Switching, 50 mA
SOT-143B
Phillips
BSS83
Q2
MOSFET, P-ch, 30 V, 3.6 A, 75 mΩ
SuperSOT-6
Fairchild
FDC654P
U1
IC, Low Cost Non-Sync Buck Controller
SO-8
TI
TPS40200D
L1
12 V
33 μH
R1
10 Ω
Resistor, Chip, 1/16 W, 1%
603
Std.
Std.
R10
100 kΩ
Resistor, Chip, , 1/16W, 1%
603
Std.
Std.
R11
10 kΩ
Resistor, Chip, 1/16 W, 1%
603
Std.
Std.
R12
1 MΩ
Resistor, Chip, 1/16 W, 1%
603
Std.
Std.
R13
49.9 Ω
Resistor, Chip, 1/16 W, 1%
603
Std.
Std.
R2
0.02 Ω
Resistor, Chip, 1/16 W, 5%
2010
Std.
Std.
R3
68.1 kΩ
Resistor, Chip, 1/16 W, 1%
603
Std.
Std.
R4
2.0 kΩ
Resistor, Chip, 1/16 W, 1%
603
Std.
Std.
R5
0Ω
Resistor, Chip, 1/16 W, 1%
603
Std.
Std.
R6
26.7 kΩ
Resistor, Chip, 1/16 W, 1%
603
Std.
Std.
R7
1.0 kΩ
Resistor, Chip, 1/16 W, 1%
603
Std.
Std.
R8
300 kΩ
Resistor, Chip, 1/16 W, 1%
603
Std.
Std.
PCB Plots
Figure 45 through Figure 47 show the design of the TPS40200EVM-001 printed circuit board. The design uses
2-layer 2-oz copper and is 1.4 in × 2.3 in. All components are mounted on the top side to allow the user to easily
view, probe, and evaluate the TPS40200 control IC in a practical application. Moving components to both sides
of the PCB or using additional internal layers can offer additional size reduction for space-constrained
applications.
Copyright © 2006–2011, Texas Instruments Incorporated
31
TPS40200-Q1
SLUS739D – SEPTEMBER 2006 – REVISED JULY 2011
www.ti.com
Figure 45. TPS40200EVM-001 Component Placement (Viewed From Top)
Figure 46. TPS40200EVM001 Top Copper (Viewed From Top)
Figure 47. TPS40200EVM-001 Bottom Copper (X-Ray View From Top)
32
Copyright © 2006–2011, Texas Instruments Incorporated
TPS40200-Q1
SLUS739D – SEPTEMBER 2006 – REVISED JULY 2011
www.ti.com
Application 2: 18-V to 50-V Input, 16-V Output at 1 A
This is an example of using the TPS40200 in a higher voltage application. The output voltage is 16 V at 1 A with
an 18-V to 50-V input. Module boards built to this schematic and a test report are available.
Test Results
The efficiency and load regulation from boards built from this design are shown in Figure 49 and Figure 50.
Further information and support material is available.
+
+
Figure 48. Buck Converter: VIN = 18 V to 50 V, VOUT = 16 V at 1 A
100
16.500
VIN = 24 V
16.450
95
Output Voltage - V
Efficiency - %
16.400
VIN = 48 V
90
85
80
16.350
VIN = 48 V
16.300
16.250
VIN = 24 V
16.200
75
16.150
70
16.100
0.1
0.2
0.3
0.4 0.5 0.6 0.7
Load Current - A
0.8
Figure 49. Efficiency vs Load
Copyright © 2006–2011, Texas Instruments Incorporated
0.9
1.0
0.1
0.2
0.3
0.4 0.5 0.6 0.7
Load Current - A
0.8
0.9
1.0
Figure 50. Load Regulation, Two Input Voltage
Extremes
33
TPS40200-Q1
SLUS739D – SEPTEMBER 2006 – REVISED JULY 2011
www.ti.com
Application 3: Wide-Input-Voltage LED Constant-Current Driver
This application uses the TPS40200 as a buck controller that drives a string of LED diodes. The feedback point
for this circuit is a sense resistor in series with this string. The low 0.7-V reference minimizes power wasted in
this resistor and maintains the LED current at a value given by 0.7 V/RSENSE. As the input voltage is varied, the
duty cycle changes to maintain the LED current at a constant value, so that the light intensity does not change
with large input-voltage variations.
+
+
Figure 51. Wide-Input-Voltage Range LED Driver
100
Efficiency - %
90
80
70
60
50
10.0
15.0
20.0
Input Voltage - V
25.0
30.0
Figure 52. Efficiency vs Input Voltage
34
Copyright © 2006–2011, Texas Instruments Incorporated
TPS40200-Q1
SLUS739D – SEPTEMBER 2006 – REVISED JULY 2011
www.ti.com
DESIGN REFERENCES
PCB Layout Recommendations
R3
R1
Input
C5
C3
TPS40200
C6
RSENSE
VDD
1 RC
8
C4
Q1
R5
ISEN
2 SS
C1
L1
Output
7
R4
GDRV 6
3 COMP
C2
D1
C7
C8
Ground
GND
4 FB
5
R8
R9
C9
R6
R10
U D G-07045
R3
C5
TPS40200
C3
R1
VDD
C4
R5
SS
ISEN
COMP
GDRV
FB
GND
R4
RSENSE
Switch node
R8
R6
Low current Control
Components
R9
R10
Q1
C1
High current
Power stage components
L1
D1
C9
C7
RC
C8
C6
Input
Output
C2
Ground
Kelvin Ground
Kelvin Voltage Sense
Figure 53. PCB Layout Recommendations
Copyright © 2006–2011, Texas Instruments Incorporated
35
TPS40200-Q1
SLUS739D – SEPTEMBER 2006 – REVISED JULY 2011
www.ti.com
Layout Hints
• AC current loops must be kept as short as possible. For the maximum effectiveness from C1, place it near
the VDD pin of the controller and design the input ac loop consisting of C1-RSENSE-Q1-D1 to be as short as
possible. Excessive high-frequency noise on VDD during switching degrades overall regulation as the load
increases.
• The output loop A (D1-L1-C2) should also be kept as small as possible. Otherwise, the application’s output
noise performance will be degraded.
• It is recommended that traces carrying large ac currents not be connected through a ground plane. Instead,
use PCB traces on the top layer to conduct the ac current, and use the ground plane as a noise shield. Split
the ground plane as necessary to keep noise away from the TPS40200 and noise-sensitive areas, such as
feedback resistors R6 and R10.
• Keep the SW node as physically small as possible to minimize parasitic capacitance and to minimize radiated
emissions.
• For good output-voltage regulation, Kelvin connections should be brought from the load to R6 and R10.
• The trace from the R6-R10 junction to the TPS40200 should be short and kept away from any noise source,
such as the SW node.
• The gate drive trace should be as close to the power FET gate as possible.
The TPS40200 is encapsulated in a standard plastic SOIC-8 package. The typical PCB layout for this package is
shown in Figure 54.
3.81
3
5.2
7.4
2.2
1.27
0.6
Dimensions are in millimeters
Figure 54. Suggested SOIC-8 PCB Footprint
Related Parts
•
•
TPS4007/9 Low-Input Synchronous Buck Controller
TL5001 Wide-Input-Range Controller
Reference Documents
•
•
•
•
•
•
36
Under the Hood of Low-Voltage DC/DC Converters, SEM1500 Topic 5, 2002 Seminar Series
Understanding Buck Power Stages in Switch-Mode Power Supplies, literature number SLVA057
Design and Application Guide for High Speed MOSFET Gate Drive Circuits, SEM 1400 – 2001 Seminar
Series
Designing Stable Control Loops, SEM 1400, 2001 Seminar Series
http://power.ti.com
TPS40K - DC/DC Controller Products Designer Software. This simple design tool supports the TPS40xxx
family of controllers. To order a CD from the Product Information Center, request literature number SLU015,
TPS40K/SWIFT CD-ROM.
Copyright © 2006–2011, Texas Instruments Incorporated
PACKAGE OPTION ADDENDUM
www.ti.com
21-Jan-2011
PACKAGING INFORMATION
Orderable Device
TPS40200QDRQ1
Status
(1)
ACTIVE
Package Type Package
Drawing
SOIC
D
Pins
Package Qty
8
2500
Eco Plan
(2)
Green (RoHS
& no Sb/Br)
Lead/
Ball Finish
MSL Peak Temp
CU NIPDAU Level-1-260C-UNLIM
(3)
Samples
(Requires Login)
Request Free Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF TPS40200-Q1 :
• Catalog: TPS40200
• Enhanced Product: TPS40200-EP
NOTE: Qualified Version Definitions:
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
21-Jan-2011
• Catalog - TI's standard catalog product
• Enhanced Product - Supports Defense, Aerospace and Medical Applications
Addendum-Page 2
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