Bulletin I2776 rev. E 04/99 P400 SERIES PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Features Glass passivated junctions for greater reliability Electrically isolated base plate 40A Available up to 1200 V RRM , V DRM High dynamic characteristics Wide choice of circuit configurations Simplified mechanical design and assembly UL E78996 approved Description The P400 series of Integrated Power Circuits consists of power thyristors and power diodes configured in a single package. With its isolating base plate, mechanical designs are greatly simplified giving advantages of cost reduction and reduced size. Applications include power supplies, control circuits and battery chargers. Major Ratings and Characteristics Parameters P400 Units 40 A @ TC 80 °C @ 50Hz 385 A @ 60Hz 400 A @ 50Hz 745 A2s @ 60Hz 680 A2 s 7450 A2√s VRRM 400 to 1200 V VINS 2500 V - 40 to 125 °C ID IFSM I2t I2√t TJ www.irf.com 1 P400 Series Bulletin I2776 rev. E 04/99 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number VRRM maximum repetitive VRSM maximum nonVDRM maximum peak reverse voltage repetitive peak reverse repetitive peak off-state voltage voltage V V V P401, P421, P431 400 500 400 P402, P422, P432 600 700 600 P403, P423, P433 800 900 800 P404, P424, P434 1000 1100 1000 P405, P425, P435 1200 1300 1200 IRRM max. @ TJ max. mA 10 On-state Conduction Parameter P400 Units Conditions ID Maximum DC output current 40 A @ TC = 80°C, full bridge circuits I TSM Max. peak one-cycle 385 A t = 10ms I FSM non-repetitive on-state 400 t = 8.3ms reapplied or forward current 325 t = 10ms 100% VRRM t = 8.3ms reapplied Sinusoidal half wave, Initial TJ = TJ max. 340 2 I t Maximum I2t for fusing 745 2 A s t = 10ms No voltage 680 t = 8.3ms reapplied 530 t = 10ms 100% VRRM t = 8.3ms reapplied 480 I 2√t Maximum I2√t for fusing No voltage 7450 A2√s t = 0.1 to 10ms, no voltage reapplied I 2t for time tx = I 2√t . √tx V T(TO)1 Low value of threshold voltage V T(TO)2 High value of threshold voltage r t1 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 0.83 1.03 V (I > π x I T(AV)), TJ = TJ max. Low level value of on-state slope resistance (16.7% x π x I T(AV) < I < π x I T(AV)), TJ = TJ max. 9.61 mΩ r t2 High level value of on-state (I > π x I T(AV)), TJ = TJ max. 7.01 slope resistance V TM Max. peak on-state or V FM forward voltage drop di/dt Maximum non repetitive rate of rise of turned on current 1.4 V 200 A/µs TJ = 25°C, ITM = π x I T(AV) TJ = 25°C, ITM = π x I F(AV) TJ = 125°C from 0.67 VDRM ITM = π x I T(AV), Ig = 500mA, tr < 0.5µs, tp > 6µs IH Maximum holding current 130 mA TJ = 25°C anode supply = 6V, resistive load IL Maximum latching current 250 mA TJ = 25°C anode supply = 6V, resistive load 2 www.irf.com P400 Series Bulletin I2776 rev. E 04/99 Blocking Parameter dv/dt P400 Units Conditions Maximum critical rate of rise of 200 V/µs TJ = 125°C, exponential to 0.67 VDRM gate open 10 mA TJ = 125°C, gate open circuit 100 µA TJ = 25°C 2500 V off-state voltage IRRM Max. peak reverse and off-state IDRM leakage current at VRRM, VDRM IRRM Max peak reverse leakage current VINS RMS isolation voltage 50Hz, circuit to base, all terminal shorted, TJ = 25°C, t = 1s Triggering Parameter PGM P400 Maximum peak gate power PG(AV) Maximum average gate power IGM Maximum peak gate current - VGM Maximum peak negative 2 2 IGD W A 10 gate voltage VGT Units Conditions 8 V Maximum gate voltage required 3 to trigger 2 T J = 25°C 1 T J = 125°C Maximum gate current 90 required to trigger 60 T J = 25°C Anode Supply = 6V resistive load T J = 125°C Maximum gate voltage 0.2 V TJ = 125°C, rated VDRM applied 2 mA TJ = 125°C, rated VDRM applied P400 Units Conditions that will not trigger IGD Anode Supply = 6V resistive load T J = - 40°C mA 35 VGD T J = - 40°C Maximum gate current that will not trigger Thermal and Mechanical Specification Parameter TJ Max. operating temperature range -40 to 125 Tstg Max. storage temperature range -40 to 125 °C RthJC Max. thermal resistance, 1.05 K/W DC operation per junction 0.10 K/W Mounting surface, smooth and greased 4 Nm A mounting compound is recommended and the torque should be checked after a period of 3 hours to allow for the spread of the compound 58 (2.0) g (oz) junction to case RthCS Max. thermal resistance, case to heatsink T Mounting torque, base to heatsink wt Approximate weight www.irf.com 3 P400 Series Bulletin I2776 rev. E 04/99 Circuit Type and Coding * Circuit "0" Circuit "2" Circuit "3" Terminal Positions G1 G1 Schematic diagram diagram AC1 G3 G2 AC2 AC1 AC2 AC2 G4 G2 (-) G1 AC1 (+) (-) Single Phase Hybrid Bridge CommonCathode G2 (-) (+) Single Phase Hybrid Bridge Doubler (+) Single Phase All SCR Bridge Basic series P40. P42. P43. With voltage suppression P40.K P42.K P43.K With free-wheeling diode P40.W - - P40.KW - - With both voltage suppression and free-wheeling diode * To complete code refer to voltage ratings table, i.e.: for 600V P410.W complete code is P402W 25 (0.98) MAX. 1.65 (0.06) MAX. 12.7 (0.50) 12.7 (0.50) 15.5 (0.61) 63.5 (2.50) Faston 6.35x0.8 (0.25x0.03) 23.2 (0.91) 5.2 (0.20) 45 (1.77) 32.5 (1.28) MA X. 2.5 (0.10) MAX. 4.6 (0. 18) 4.6 (0.18) Outline Table 33.8 (1.33) 48.7 (1.91) All dimensions in millimeters (inches) 4 www.irf.com P400 Series Bulletin I2776 rev. E 04/99 Rt 100 K/ W = 1 A hS 0. 7 80 R /W 5 K /W P400 Series T J = 125°C 20 ta /W 3K 40 el 2K -D 1.5 K/ W 180° (Sine) 60 W K/ Maximum Total Power Loss (W) 120 10 K/ W 0 0 5 10 15 20 25 30 Total Output Current (A) 35 40 0 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) 180° 120° 90° 60° 30° 25 20 RMS Limit 15 10 Conduction angle P400 Series T J = 125°C Per Junction 5 0 0 Maximum Allowable Case Temperature (°C) Maximum Average On-state Power Loss (W) 30 5 10 15 40 DC 180° 120° 90° 60° 30° 35 30 25 20 RMS Limit 15 Conduction Period 10 P400 Series T J = 125°C Per Junction 5 0 0 20 5 10 15 20 25 30 35 Average On-state Current (A) Average On-sta te Current (A) Fig. 2 - On-state Power Loss Characteristics Fig. 3 - On-state Power Loss Characteristics 1000 130 Fully Turned-on Instantaneous On-state Current (A) Maximum Average On-state Power Loss (W) Fig. 1 - Current Ratings Nomogram (1 Module Per Heatsink) 120 110 180° (Rect) 100 180° (Sine) 90 P400 Series Per Module 80 70 0 5 10 15 20 25 30 35 40 45 Total Output Current (A) Fig. 4 - Current Ratings Characteristics www.irf.com T J = 25 °C T J = 125 °C 100 10 P400 Series Per Junction 1 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 Instantaneous On-state Voltage (V) Fig. 5 - On-state Voltage Drop Characteristics 5 P400 Series 350 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) Bulletin I2776 rev. E 04/99 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T J= 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 325 300 275 250 225 200 P400 Series Per Junction 175 10 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J = 125°C No Voltage Reapplied Rated VRRM Reapplied 350 300 250 200 P400 Series Per Junction 150 0.01 150 1 400 100 0.1 1 Pulse Train Duration (s) Number Of E qual Amplitude Half Cyc le Curre nt Pulses (N) Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 7 - Maximum Non-Repetitive Surge Current Transient Thermal Impedance Z thJC (K/W) 10 Steady State Value: R thJC = 1.05 K/W (DC Operation) 1 P400 Series Per Junction 0.1 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Rectangular gate pulse a)Recommended load line for rated di/dt : 10V, 20 ohms, tr <= 1µs b)Recommended load line for rated di/dt : 10 V, 65 ohms, tr <= 1µs (1) (2) (3) (4) PGM PGM PGM PGM = = = = 100 W, tp = 500 µs 50 W, tp = 1 ms 20 W, tp = 25 ms 10 W, tp = 5 ms 10 (b) VGD (a) TJ = -40 °C TJ = 125 °C 1 TJ = 25 °C Instantaneous Gate Voltage (V) 100 IGD 0.1 0.001 (4) P400 Series 0.01 0.1 1 (3) (2) (1) Frequency Limited By PG(AV) 10 100 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics 6 www.irf.com P400 Series Bulletin I2776 rev. E 04/99 WORLD HEADQUARTERS: EUROPEAN HEADQUARTERS: IR CANADA: IR GERMANY: IR ITALY: IR FAR EAST: IR SOUTHEAST ASIA: IR TAIWAN: http://www.irf.com www.irf.com 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332. Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408. 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801. Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933. Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220. K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086. 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630. 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936. Fax-On-Demand: +44 1883 733420 Data and specifications subject to change without notice. 7